Conghui LIU

Person

Qingdao, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Notch shape of trench gate bottom corner for better breakdown volta...
- Patent number 12,183,795
- Issue date Dec 31, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,154,943
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device
- Patent number 12,154,944
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,136,647
- Issue date Nov 5, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of new power MOS and IGBT with built-in multip...
- Patent number 11,984,500
- Issue date May 14, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Super junction power device and method of making the same
- Patent number 11,715,758
- Issue date Aug 1, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT device with narrow mesa and manufacture thereof
- Patent number 11,677,019
- Issue date Jun 13, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUPER JUNCTION POWER DEVICE
- Publication number 20230326962
- Publication date Oct 12, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOTCH SHAPE OF TRENCH GATE BOTTOM CORNOR FOR BETTER BREAKDOWN VOLTA...
- Publication number 20220320303
- Publication date Oct 6, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF NEW POWER MOS AND IGBT WITH BUILT-IN MULTIP...
- Publication number 20220209005
- Publication date Jun 30, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-BITS STORAGE IN POWER MOS (AND IGBT) AND SIMULTANEOUS READ ME...
- Publication number 20220208765
- Publication date Jun 30, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- G11 - INFORMATION STORAGE
Information Patent Application
SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20210391416
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT DEVICE WITH NARROW MESA AND MANUFACTURE THEREOF
- Publication number 20210391453
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20210391417
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20210391419
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20210391418
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS

Conghui LIU

Person

Patents Grantslast 30 patents

Notch shape of trench gate bottom corner for better breakdown volta...

Super junction power device and method of making the same

Super junction power device

Super junction power device and method of making the same

Structure and method of new power MOS and IGBT with built-in multip...

Super junction power device and method of making the same

IGBT device with narrow mesa and manufacture thereof

Patents Applicationslast 30 patents

SUPER JUNCTION POWER DEVICE

NOTCH SHAPE OF TRENCH GATE BOTTOM CORNOR FOR BETTER BREAKDOWN VOLTA...

STRUCTURE AND METHOD OF NEW POWER MOS AND IGBT WITH BUILT-IN MULTIP...

MULTI-BITS STORAGE IN POWER MOS (AND IGBT) AND SIMULTANEOUS READ ME...

SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME

IGBT DEVICE WITH NARROW MESA AND MANUFACTURE THEREOF

SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME

SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME

SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME