Cory Wajda

Person

Sand Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for controlling the forming voltage in resistive random acce...
- Patent number 11,700,778
- Issue date Jul 11, 2023
- Tokyo Electron Limited
- Steven Consiglio
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 11,621,190
- Issue date Apr 4, 2023
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 11,024,535
- Issue date Jun 1, 2021
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling the forming voltage in resistive random acce...
- Patent number 10,991,881
- Issue date Apr 27, 2021
- Tokyo Electron Limited
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method utilizing using post etch pattern encapsulation
- Patent number 10,950,460
- Issue date Mar 16, 2021
- Tokyo Electron Limited
- Angelique Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium metal feature fill for interconnects
- Patent number 10,700,009
- Issue date Jun 30, 2020
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integration of a self-forming barrier layer and a ruthenium metal l...
- Patent number 10,157,784
- Issue date Dec 18, 2018
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective metal oxide deposition using a self-assembled monolayer s...
- Patent number 10,068,764
- Issue date Sep 4, 2018
- Tokyo Electron Limited
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium metal feature fill for interconnects
- Patent number 10,056,328
- Issue date Aug 21, 2018
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of corner rounding and trimming of nanowires by microwave pl...
- Patent number 10,008,564
- Issue date Jun 26, 2018
- Tokyo Electron Limited
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium metal feature fill for interconnects
- Patent number 9,711,449
- Issue date Jul 18, 2017
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of ALD barrier layer and CVD Ru liner for void-free Cu...
- Patent number 9,607,888
- Issue date Mar 28, 2017
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structures and techniques for atomic layer deposition
- Patent number 8,722,548
- Issue date May 13, 2014
- International Business Machines Corporation
- Shintaro Aoyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for monitoring status of system components
- Patent number 8,460,945
- Issue date Jun 11, 2013
- Tokyo Electron Limited
- David L. O'Meara
- G01 - MEASURING TESTING
Information Patent Grant
Method of forming high-dielectric constant films for semiconductor...
- Patent number 7,964,515
- Issue date Jun 21, 2011
- Tokyo Electron Limited
- Robert D. Clark
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and system for forming an oxynitride layer by performing oxi...
- Patent number 7,517,814
- Issue date Apr 14, 2009
- Tokyo Electron, Ltd.
- Cory S. Wajda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and system for forming an oxynitride layer
- Patent number 7,501,352
- Issue date Mar 10, 2009
- Tokyo Electron, Ltd.
- Masanobu Igeta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and processing system for monitoring status of system compon...
- Patent number 7,479,454
- Issue date Jan 20, 2009
- Tokyo Electron Limited
- David L. O'Meara
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method of forming a gate stack containing a gate dielectric layer h...
- Patent number 7,470,591
- Issue date Dec 30, 2008
- Tokyo Electron Limited
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a substrate
- Patent number 7,419,702
- Issue date Sep 2, 2008
- Tokyo Electron Limited
- Kazuhito Nakamura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 7,393,761
- Issue date Jul 1, 2008
- Tokyo Electron Limited
- Cory Wajda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for increasing tensile stress in a thin film usin...
- Patent number 7,300,891
- Issue date Nov 27, 2007
- Tokyo Electron, Ltd.
- Igeta Masonobu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Formation of ultra-thin oxide layers by self-limiting interfacial o...
- Patent number 7,235,440
- Issue date Jun 26, 2007
- Tokyo Electron Limited
- David L O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming uniform ultra-thin oxynitride layers
- Patent number 7,202,186
- Issue date Apr 10, 2007
- Tokyo Electron Limited
- David L O'Meara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interfacial oxidation process for high-k gate dielectric process in...
- Patent number 6,974,779
- Issue date Dec 13, 2005
- Tokyo Electron Limited
- David L O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving the adhesion and durability of CVD tantalum an...
- Patent number 6,500,761
- Issue date Dec 31, 2002
- Tokyo Electron Limited
- Cory Wajda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for improving the adhesion of sputtered copper films to CVD...
- Patent number 6,455,414
- Issue date Sep 24, 2002
- Tokyo Electron Limited
- Joseph T. Hillman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
THERMAL ETCHING OF RUTHENIUM
- Publication number 20240153781
- Publication date May 9, 2024
- TOKYO ELECTRON LIMITED
- Hisashi Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION
- Publication number 20230274932
- Publication date Aug 31, 2023
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20220301930
- Publication date Sep 22, 2022
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20220139776
- Publication date May 5, 2022
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20210287936
- Publication date Sep 16, 2021
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...
- Publication number 20210234096
- Publication date Jul 29, 2021
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...
- Publication number 20200381624
- Publication date Dec 3, 2020
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20200118871
- Publication date Apr 16, 2020
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Utilizing Using Post Etch Pattern Encapsulation
- Publication number 20200051832
- Publication date Feb 13, 2020
- TOKYO ELECTRON LIMITED
- Angelique Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS
- Publication number 20190103363
- Publication date Apr 4, 2019
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE METAL OXIDE DEPOSITION USING A SELF-ASSEMBLED MONOLAYER S...
- Publication number 20180076027
- Publication date Mar 15, 2018
- TOKYO ELECTRON LIMITED
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS
- Publication number 20170317022
- Publication date Nov 2, 2017
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUTHENIUM METAL DEPOSITION METHOD FOR ELECTRICAL CONNECTIONS
- Publication number 20170241014
- Publication date Aug 24, 2017
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATION OF A SELF-FORMING BARRIER LAYER AND A RUTHENIUM METAL...
- Publication number 20170236752
- Publication date Aug 17, 2017
- TOKYO ELECTRON LIMITED
- Kai-Hung L. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CORNER ROUNDING AND TRIMMING OF NANOWIRES BY MICROWAVE PL...
- Publication number 20170125517
- Publication date May 4, 2017
- TOKYO ELECTRON LIMITED
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING
- Publication number 20170084464
- Publication date Mar 23, 2017
- TOKYO ELECTRON LIMITED
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS
- Publication number 20160358815
- Publication date Dec 8, 2016
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Aluminum-doped High-k Films
- Publication number 20150255267
- Publication date Sep 10, 2015
- TOKYO ELECTRON LIMITED
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu...
- Publication number 20150221550
- Publication date Aug 6, 2015
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures And Techniques For Atomic Layer Deposition
- Publication number 20120074533
- Publication date Mar 29, 2012
- Tokyo Electron (TEL)Limited
- Shintaro Aoyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for performing preventative maintenance in a substrate proce...
- Publication number 20110220148
- Publication date Sep 15, 2011
- TOKYO ELECTRON LIMITED
- Steven P. CONSIGLIO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS
- Publication number 20110065287
- Publication date Mar 17, 2011
- TOKYO ELECTRON LIMITED
- Cory Wajda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH-DIELECTRIC CONSTANT FILMS FOR SEMICONDUCTOR...
- Publication number 20090163012
- Publication date Jun 25, 2009
- TOKYO ELECTRON LIMITED
- Robert D. CLARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming a gate stack containing a gate dielectric layer h...
- Publication number 20070077701
- Publication date Apr 5, 2007
- TOKYO ELECTRON LIMITED
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for forming a layer with controllable spstial var...
- Publication number 20070066084
- Publication date Mar 22, 2007
- Cory Wajda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-source method and system for forming an oxide layer
- Publication number 20070065593
- Publication date Mar 22, 2007
- Cory Wajda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for increasing tensile stress in a thin film usin...
- Publication number 20060226518
- Publication date Oct 12, 2006
- Igeta Masanobu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and system for forming an oxynitride layer by performing oxi...
- Publication number 20060228871
- Publication date Oct 12, 2006
- Cory S. Wajda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and system for forming a high-k dielectric layer
- Publication number 20060228898
- Publication date Oct 12, 2006
- Cory Wajda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and system for forming an oxynitride layer
- Publication number 20060228902
- Publication date Oct 12, 2006
- Masanobu Igeta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Method for controlling the forming voltage in resistive random acce...

Method for filling recessed features in semiconductor devices with...

Method for filling recessed features in semiconductor devices with...

Method for controlling the forming voltage in resistive random acce...

Method utilizing using post etch pattern encapsulation

Ruthenium metal feature fill for interconnects

Integration of a self-forming barrier layer and a ruthenium metal l...

Selective metal oxide deposition using a self-assembled monolayer s...

Ruthenium metal feature fill for interconnects

Method of corner rounding and trimming of nanowires by microwave pl...

Ruthenium metal feature fill for interconnects

Integration of ALD barrier layer and CVD Ru liner for void-free Cu...

Structures and techniques for atomic layer deposition

Method for monitoring status of system components

Method of forming high-dielectric constant films for semiconductor...

Method and system for forming an oxynitride layer by performing oxi...

Method and system for forming an oxynitride layer

Method and processing system for monitoring status of system compon...

Method of forming a gate stack containing a gate dielectric layer h...

Method for processing a substrate

Method for fabricating a semiconductor device

Method and system for increasing tensile stress in a thin film usin...

Formation of ultra-thin oxide layers by self-limiting interfacial o...

Method of forming uniform ultra-thin oxynitride layers

Interfacial oxidation process for high-k gate dielectric process in...

Method for improving the adhesion and durability of CVD tantalum an...

Method for improving the adhesion of sputtered copper films to CVD...

Patents Applicationslast 30 patents

THERMAL ETCHING OF RUTHENIUM

SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...

METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

Method Utilizing Using Post Etch Pattern Encapsulation

RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS

SELECTIVE METAL OXIDE DEPOSITION USING A SELF-ASSEMBLED MONOLAYER S...

RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS

RUTHENIUM METAL DEPOSITION METHOD FOR ELECTRICAL CONNECTIONS

INTEGRATION OF A SELF-FORMING BARRIER LAYER AND A RUTHENIUM METAL...

METHOD OF CORNER ROUNDING AND TRIMMING OF NANOWIRES BY MICROWAVE PL...

GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING

RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS

Atomic Layer Deposition of Aluminum-doped High-k Films

INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu...

Structures And Techniques For Atomic Layer Deposition

Method for performing preventative maintenance in a substrate proce...

PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS

METHOD OF FORMING HIGH-DIELECTRIC CONSTANT FILMS FOR SEMICONDUCTOR...

Method of forming a gate stack containing a gate dielectric layer h...

Method and system for forming a layer with controllable spstial var...

Multi-source method and system for forming an oxide layer

Method and system for increasing tensile stress in a thin film usin...

Method and system for forming an oxynitride layer by performing oxi...

Method and system for forming a high-k dielectric layer

Method and system for forming an oxynitride layer