Da-Wei LIN

Person

New Taipei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-gate device and related methods
- Patent number 12,363,937
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method of fabricating multigate devices having different...
- Patent number 12,356,664
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Lin Lee
Information Patent Grant
Method and multi-channel devices with anti-punch-through features
- Patent number 12,324,190
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min Jiao
Information Patent Grant
Semiconductor devices with low leakage current and methods of fabri...
- Patent number 12,317,578
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,255,230
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor structure having a plurality...
- Patent number 12,191,401
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chia-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,148,657
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact with low-k contact etch stop layer and method...
- Patent number 12,125,889
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting-Yeh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET fabrication methods
- Patent number 12,068,392
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,057,506
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 12,040,383
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having fin with all around gate
- Patent number 11,916,151
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chia-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with different liners for PFET and NFET and method of...
- Patent number 11,810,827
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Lung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure with deep con...
- Patent number 11,742,400
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,615,983
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Chien-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET fabrication methods
- Patent number 11,276,766
- Issue date Mar 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of dislocations in source and drain regions of FinFET dev...
- Patent number 11,211,455
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-transistor bandgap reference circuit and FinFET device suited f...
- Patent number 11,150,680
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yvonne Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with different liners for PFET and NFET and method of...
- Patent number 11,031,299
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Lung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of dislocations in source and drain regions of finFET dev...
- Patent number 10,741,642
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-transistor bandgap reference circuit and FinFET device suited f...
- Patent number 10,534,393
- Issue date Jan 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yvonne Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with different liners for PFET and NFET and method of...
- Patent number 10,522,417
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Lung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET fabrication methods
- Patent number 10,468,500
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-transistor bandgap reference circuit and FinFET device suited f...
- Patent number 10,466,731
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yvonne Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit fabrication with a passivation agent
- Patent number 10,290,535
- Issue date May 14, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Te Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of dislocations in source and drain regions of FinFET dev...
- Patent number 10,153,344
- Issue date Dec 11, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus of forming an integrated circuit with a strain...
- Patent number 9,768,277
- Issue date Sep 19, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Lung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of dislocations in source and drain regions of FinFET dev...
- Patent number 9,768,256
- Issue date Sep 19, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of annealing after deposition of gate layers
- Patent number 9,620,386
- Issue date Apr 11, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with multiple dislocation planes and method for forming the...
- Patent number 9,590,101
- Issue date Mar 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsiang Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250241028
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250098226
- Publication date Mar 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIA-MING HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...
- Publication number 20250022931
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH LOCAL ISOLATIO...
- Publication number 20240387706
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240387254
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT...
- Publication number 20240379802
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FABRICATION METHODS
- Publication number 20240371970
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20240347627
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240332069
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE
- Publication number 20240194794
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIA-MING HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH LOW LEAKAGE CURRENT AND METHODS OF FABRI...
- Publication number 20230395436
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230317784
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH LOCAL ISOLATIO...
- Publication number 20230317830
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND MULTI-CHANNEL DEVICES WITH ANTI-PUNCH-THROUGH FEATURES
- Publication number 20230197820
- Publication date Jun 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min Jiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Device Structure with Stepwise Isolation Features and Met...
- Publication number 20230137528
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Cut Feature in Semiconductor Devices and Methods of Fabricatin...
- Publication number 20230015372
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230008020
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ming HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING FIN WITH ALL AROUND GATE AND METHOD...
- Publication number 20220416090
- Publication date Dec 29, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIA-MING HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20220367253
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Han CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20220328639
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT WITH LOW-K CONTACT ETCH STOP LAYER AND METHOD...
- Publication number 20220285513
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Yeh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20220285533
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT...
- Publication number 20220238678
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FABRICATION METHODS
- Publication number 20220208986
- Publication date Jun 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device with Different Liners for PFET and NFET and Method of...
- Publication number 20210366784
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Lung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210335661
- Publication date Oct 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Chien-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Dislocations in Source and Drain Regions of FinFET Dev...
- Publication number 20200350404
- Publication date Nov 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung Tsai
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
FINFET FABRICATION METHODS
- Publication number 20200066869
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DEEP CON...
- Publication number 20200058747
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TRANSISTOR BANDGAP REFERENCE CIRCUIT AND FINFET DEVICE SUITED F...
- Publication number 20200019201
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Yvonne Lin
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Multi-gate device and related methods

Device and method of fabricating multigate devices having different...

Method and multi-channel devices with anti-punch-through features

Semiconductor devices with low leakage current and methods of fabri...

Semiconductor structure and method for forming the same

Manufacturing method for semiconductor structure having a plurality...

Semiconductor structure and method for forming the same

Source/drain contact with low-k contact etch stop layer and method...

FinFET fabrication methods

Semiconductor device and manufacturing method thereof

Multi-gate device and related methods

Semiconductor structure having fin with all around gate

FinFET device with different liners for PFET and NFET and method of...

Fin field effect transistor (FinFET) device structure with deep con...

Semiconductor structure and method for forming the same

FinFET fabrication methods

Formation of dislocations in source and drain regions of FinFET dev...

Two-transistor bandgap reference circuit and FinFET device suited f...

FinFET device with different liners for PFET and NFET and method of...

Formation of dislocations in source and drain regions of finFET dev...

Two-transistor bandgap reference circuit and FinFET device suited f...

FinFET device with different liners for PFET and NFET and method of...

FinFET fabrication methods

Two-transistor bandgap reference circuit and FinFET device suited f...

Integrated circuit fabrication with a passivation agent

Formation of dislocations in source and drain regions of FinFET dev...

Method and apparatus of forming an integrated circuit with a strain...

Formation of dislocations in source and drain regions of FinFET dev...

Methods of annealing after deposition of gate layers

FinFET with multiple dislocation planes and method for forming the...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE

Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...

METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH LOCAL ISOLATIO...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT...

FINFET FABRICATION METHODS

MULTI-GATE DEVICE AND RELATED METHODS

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICES WITH LOW LEAKAGE CURRENT AND METHODS OF FABRI...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH LOCAL ISOLATIO...

METHOD AND MULTI-CHANNEL DEVICES WITH ANTI-PUNCH-THROUGH FEATURES

Multigate Device Structure with Stepwise Isolation Features and Met...

Gate Cut Feature in Semiconductor Devices and Methods of Fabricatin...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE HAVING FIN WITH ALL AROUND GATE AND METHOD...

INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...

SOURCE/DRAIN CONTACT WITH LOW-K CONTACT ETCH STOP LAYER AND METHOD...

MULTI-GATE DEVICE AND RELATED METHODS

DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT...

FINFET FABRICATION METHODS

FinFET Device with Different Liners for PFET and NFET and Method of...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Formation of Dislocations in Source and Drain Regions of FinFET Dev...

FINFET FABRICATION METHODS

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DEEP CON...

TWO-TRANSISTOR BANDGAP REFERENCE CIRCUIT AND FINFET DEVICE SUITED F...