Dai Iwata

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 12,094,944
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 12,027,520
- Issue date Jul 2, 2024
- SanDisk Technologies LLC
- Akihiro Yuu
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 11,837,601
- Issue date Dec 5, 2023
- SanDisk Technologies LLC
- Jun Akaiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate material-based capacitor and resistor structures and methods o...
- Patent number 11,626,397
- Issue date Apr 11, 2023
- SanDisk Technologies LLC
- Hokuto Kodate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate material-based capacitor and resistor structures and methods o...
- Patent number 11,322,597
- Issue date May 3, 2022
- SanDisk Technologies LLC
- Hokuto Kodate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices containing asymmetric contact via structures
- Patent number 10,770,459
- Issue date Sep 8, 2020
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier three-dimensional memory devices containing annular diel...
- Patent number 10,748,919
- Issue date Aug 18, 2020
- SANDISK TECHNOLOGY LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier three-dimensional memory devices containing annular diel...
- Patent number 9,991,280
- Issue date Jun 5, 2018
- SanDisk Technologies LLC
- Tadashi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Select gates with central open areas
- Patent number 9,613,971
- Issue date Apr 4, 2017
- SanDisk Technologies LLC
- Masahiro Yaegashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Select gates with select gate dielectric first
- Patent number 9,443,862
- Issue date Sep 13, 2016
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240258317
- Publication date Aug 1, 2024
- SANDISK TECHNOLOGIES LLC
- Kiyokazu SHISHIDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240147730
- Publication date May 2, 2024
- SANDISK TECHNOLOGIES LLC
- Kiyokazu SHISHIDO
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240063278
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Dai IWATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20220367449
- Publication date Nov 17, 2022
- SANDISK TECHNOLOGIES LLC
- Akihiro YUU
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20220359690
- Publication date Nov 10, 2022
- SANDISK TECHNOLOGIES LLC
- Dai IWATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20220359501
- Publication date Nov 10, 2022
- SANDISK TECHNOLOGIES LLC
- Jun Akaiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...
- Publication number 20220068915
- Publication date Mar 3, 2022
- SANDISK TECHNOLOGIES LLC
- Hokuto KODATE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...
- Publication number 20220069097
- Publication date Mar 3, 2022
- SANDISK TECHNOLOGIES LLC
- Hokuto KODATE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICES CONTAINING ASYMMETRIC CONTACT VIA STRUCTURES AND METHO...
- Publication number 20190296012
- Publication date Sep 26, 2019
- SANDISK TECHNOLOGIES LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...
- Publication number 20180277566
- Publication date Sep 27, 2018
- SANDISK TECHNOLOGIES LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...
- Publication number 20170236835
- Publication date Aug 17, 2017
- SanDisk Technologies LLC
- Tadashi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Select Gates with Central Open Areas
- Publication number 20170025425
- Publication date Jan 26, 2017
- SanDisk Technologies, Inc.
- Masahiro Yaegashi
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor circuits including fringeless transistors and method of...

Transistor circuits including fringeless transistors and method of...

Transistor circuits including fringeless transistors and method of...

Gate material-based capacitor and resistor structures and methods o...

Gate material-based capacitor and resistor structures and methods o...

CMOS devices containing asymmetric contact via structures

Multi-tier three-dimensional memory devices containing annular diel...

Multi-tier three-dimensional memory devices containing annular diel...

Select gates with central open areas

Select gates with select gate dielectric first

Patents Applicationslast 30 patents

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...

GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...

CMOS DEVICES CONTAINING ASYMMETRIC CONTACT VIA STRUCTURES AND METHO...

MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...

MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...

Select Gates with Central Open Areas