Daniel F. Feezell

Person

Goleta, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Rugged, single crystal wide-band-gap-material scanning-tunneling-mi...
- Patent number 12,078,654
- Issue date Sep 3, 2024
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Removing or preventing dry etch-induced damage in Al/In/GaN films b...
- Patent number 11,715,635
- Issue date Aug 1, 2023
- Morteza Monavarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating broad-band lattice-matched omnidirectional di...
- Patent number 11,652,188
- Issue date May 16, 2023
- Morteza Monavarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor product comprising a heteroepitaxial layer grown on a...
- Patent number 11,456,370
- Issue date Sep 27, 2022
- UNM Rainforest Innovations
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making heteroepitaxial structures and device formed by th...
- Patent number 11,374,106
- Issue date Jun 28, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making heteroepitaxial structures and device formed by th...
- Patent number 11,349,011
- Issue date May 31, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor product comprising a heteroepitaxial layer grown on a...
- Patent number 11,342,442
- Issue date May 24, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a seed area and growing a heteroepitaxial layer o...
- Patent number 11,342,441
- Issue date May 24, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Device with heteroepitaxial structure made using a growth mask
- Patent number 11,342,438
- Issue date May 24, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making heteroepitaxial structures and device formed by th...
- Patent number 11,296,208
- Issue date Apr 5, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a seed area and growing a heteroepitaxial layer o...
- Patent number 11,296,207
- Issue date Apr 5, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Device with heteroepitaxial structure made using a growth mask
- Patent number 11,296,206
- Issue date Apr 5, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Removing or preventing dry etch-induced damage in Al/In/GaN films b...
- Patent number 11,177,126
- Issue date Nov 16, 2021
- Morteza Monavarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rugged, single crystal wide-band-gap-material scanning-tunneling-mi...
- Patent number 11,002,758
- Issue date May 11, 2021
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Atomic force microscopy based on nanowire tips for high aspect rati...
- Patent number 10,840,092
- Issue date Nov 17, 2020
- Tito Busani
- G01 - MEASURING TESTING
Information Patent Grant
Polarized white light devices using non-polar or semipolar gallium...
- Patent number RE47241
- Issue date Feb 12, 2019
- Soraa, Inc.
- Mark P. D'Evelyn
Information Patent Grant
Device with heteroepitaxial structure made using a growth mask
- Patent number 10,141,418
- Issue date Nov 27, 2018
- STC.UNM
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices for light extraction from a group III-nitride v...
- Patent number 10,043,946
- Issue date Aug 7, 2018
- Soraa, Inc.
- Rafael Aldaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the reuse of gallium nitride epitaxial substrates
- Patent number 9,773,704
- Issue date Sep 26, 2017
- The Regents of the University of California
- Casey O. Holder
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical device structure using GaN substrates for laser applications
- Patent number 9,722,398
- Issue date Aug 1, 2017
- Soraa Laser Diode, Inc.
- James W. Raring
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure and method for the fabrication of a gallium nitride verti...
- Patent number 9,640,947
- Issue date May 2, 2017
- The Regents of the University of California
- Casey O. Holder
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical device structure using GaN substrates for laser applications
- Patent number 9,531,164
- Issue date Dec 27, 2016
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices for light extraction from a Group III-nitride v...
- Patent number 9,406,843
- Issue date Aug 2, 2016
- Soraa, Inc.
- Rafael Aldaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the reuse of gallium nitride epitaxial substrates
- Patent number 9,396,943
- Issue date Jul 19, 2016
- The Regents of the University of California
- Casey O. Holder
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around metal-oxide-semiconductor transistors with gate oxides
- Patent number 9,257,535
- Issue date Feb 9, 2016
- STC.UNM
- Seung-Chang Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for the reuse of gallium nitride epitaxial substrates
- Patent number 9,147,733
- Issue date Sep 29, 2015
- The Regents of the University of California
- Casey O. Holder
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a heteroepitaxial layer on a seed area
- Patent number 9,142,400
- Issue date Sep 22, 2015
- STC.UNM
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for the fabrication of a gallium nitride verti...
- Patent number 9,136,673
- Issue date Sep 15, 2015
- The Regents of the University of California
- Casey O. Holder
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around metal-oxide-semiconductor transistors with gate oxides
- Patent number 9,076,813
- Issue date Jul 7, 2015
- STC.UNM
- Seung-Chang Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical device structure using GaN substrates for laser applications
- Patent number 9,071,039
- Issue date Jun 30, 2015
- Soraa Laser Diode, Inc.
- James W. Raring
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL SCANNING-TUNNELING-MI...
- Publication number 20240402216
- Publication date Dec 5, 2024
- UNM Rainforest Innovations
- Steven R.J. BRUECK
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
DEVICES COMPRISING DISTRIBUTED BRAGG REFLECTORS AND METHODS OF MAKI...
- Publication number 20230011230
- Publication date Jan 12, 2023
- UNM Rainforest Innovations
- Tito BUSANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20220293768
- Publication date Sep 15, 2022
- UNM Rainforest Innovations
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20220285526
- Publication date Sep 8, 2022
- UNM Rainforest Innovations
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...
- Publication number 20220068632
- Publication date Mar 3, 2022
- UNM Rainforest Innovations
- Morteza MONAVARIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-C-PLANE GROUP III-NITRIDE-BASED VCSELS WITH NANOPOROUS DISTRIBU...
- Publication number 20210273412
- Publication date Sep 2, 2021
- UNM Rainforest Innovations
- Daniel F. Feezell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL SCANNING-TUNNELING-MI...
- Publication number 20210263069
- Publication date Aug 26, 2021
- UNM Rainforest Innovations
- Steven R.J. BRUECK
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF FABRICATING BROAD-BAND LATTICE-MATCHED OMNIDIRECTIONAL DI...
- Publication number 20210126161
- Publication date Apr 29, 2021
- UNM Rainforest Innovations
- Morteza MONAVARIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20200212198
- Publication date Jul 2, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...
- Publication number 20200203504
- Publication date Jun 25, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...
- Publication number 20200203503
- Publication date Jun 25, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20200203505
- Publication date Jun 25, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
ATOMIC FORCE MICROSCOPY BASED ON NANOWIRE TIPS FOR HIGH ASPECT RATI...
- Publication number 20200185219
- Publication date Jun 11, 2020
- STC.UNM
- Tito Busani
- G01 - MEASURING TESTING
Information Patent Application
REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...
- Publication number 20200161126
- Publication date May 21, 2020
- STC.UNM
- Morteza MONAVARIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20200161448
- Publication date May 21, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...
- Publication number 20200161449
- Publication date May 21, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL SCANNING-TUNNELING-MI...
- Publication number 20190120873
- Publication date Apr 25, 2019
- STC.UNM
- Steven R.J. BRUECK
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS AND DEVICES FOR LIGHT EXTRACTION FROM A GROUP III-NITRIDE V...
- Publication number 20190044028
- Publication date Feb 7, 2019
- Soraa, Inc.
- RAFAEL ALDAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES FOR LIGHT EXTRACTION FROM A GROUP III-NITRIDE V...
- Publication number 20160343908
- Publication date Nov 24, 2016
- Soraa, Inc.
- RAFAEL ALDAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES
- Publication number 20160307801
- Publication date Oct 20, 2016
- The Regents of the University of California
- Casey O. Holder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTI...
- Publication number 20160156155
- Publication date Jun 2, 2016
- The Regents of the University of California
- Casey O. Holder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS
- Publication number 20160006217
- Publication date Jan 7, 2016
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES
- Publication number 20150371849
- Publication date Dec 24, 2015
- The Regents of the University of California
- Casey O. Holder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH GATE OXIDES
- Publication number 20150263134
- Publication date Sep 17, 2015
- Seung-Chang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES FOR LIGHT EXTRACTION FROM A GROUP III-NITRIDE V...
- Publication number 20150207032
- Publication date Jul 23, 2015
- Soraa, Inc.
- RAFAEL ALDAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES
- Publication number 20150048381
- Publication date Feb 19, 2015
- The Regents of the University of California
- Casey O. Holder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS
- Publication number 20140295595
- Publication date Oct 2, 2014
- Soraa Laser Diode, Inc.
- James W. Raring
- B82 - NANO-TECHNOLOGY
Information Patent Application
PEC ETCHING OF (20-2-1) SEMIPOLAR GALLIUM NITRIDE FOR EXTERNAL EFFI...
- Publication number 20140167059
- Publication date Jun 19, 2014
- Chung-Ta Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOL...
- Publication number 20140151634
- Publication date Jun 5, 2014
- The Regents of the University of California
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTI...
- Publication number 20140023102
- Publication date Jan 23, 2014
- Casey O. Holder
- B82 - NANO-TECHNOLOGY

Daniel F. Feezell

Person

Patents Grantslast 30 patents

Rugged, single crystal wide-band-gap-material scanning-tunneling-mi...

Removing or preventing dry etch-induced damage in Al/In/GaN films b...

Method of fabricating broad-band lattice-matched omnidirectional di...

Semiconductor product comprising a heteroepitaxial layer grown on a...

Method of making heteroepitaxial structures and device formed by th...

Method of making heteroepitaxial structures and device formed by th...

Semiconductor product comprising a heteroepitaxial layer grown on a...

Method of forming a seed area and growing a heteroepitaxial layer o...

Device with heteroepitaxial structure made using a growth mask

Method of making heteroepitaxial structures and device formed by th...

Method of forming a seed area and growing a heteroepitaxial layer o...

Device with heteroepitaxial structure made using a growth mask

Removing or preventing dry etch-induced damage in Al/In/GaN films b...

Rugged, single crystal wide-band-gap-material scanning-tunneling-mi...

Atomic force microscopy based on nanowire tips for high aspect rati...

Polarized white light devices using non-polar or semipolar gallium...

Device with heteroepitaxial structure made using a growth mask

Methods and devices for light extraction from a group III-nitride v...

Method for the reuse of gallium nitride epitaxial substrates

Optical device structure using GaN substrates for laser applications

Structure and method for the fabrication of a gallium nitride verti...

Optical device structure using GaN substrates for laser applications

Methods and devices for light extraction from a Group III-nitride v...

Method for the reuse of gallium nitride epitaxial substrates

Gate-all-around metal-oxide-semiconductor transistors with gate oxides

Method for the reuse of gallium nitride epitaxial substrates

Method of making a heteroepitaxial layer on a seed area

Structure and method for the fabrication of a gallium nitride verti...

Gate-all-around metal-oxide-semiconductor transistors with gate oxides

Optical device structure using GaN substrates for laser applications

Patents Applicationslast 30 patents

RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL SCANNING-TUNNELING-MI...

DEVICES COMPRISING DISTRIBUTED BRAGG REFLECTORS AND METHODS OF MAKI...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...

NON-C-PLANE GROUP III-NITRIDE-BASED VCSELS WITH NANOPOROUS DISTRIBU...

RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL SCANNING-TUNNELING-MI...

METHOD OF FABRICATING BROAD-BAND LATTICE-MATCHED OMNIDIRECTIONAL DI...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

ATOMIC FORCE MICROSCOPY BASED ON NANOWIRE TIPS FOR HIGH ASPECT RATI...

REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...

RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL SCANNING-TUNNELING-MI...

METHODS AND DEVICES FOR LIGHT EXTRACTION FROM A GROUP III-NITRIDE V...

METHODS AND DEVICES FOR LIGHT EXTRACTION FROM A GROUP III-NITRIDE V...

METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES

STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTI...

OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS

METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES

GATE-ALL-AROUND METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH GATE OXIDES

METHODS AND DEVICES FOR LIGHT EXTRACTION FROM A GROUP III-NITRIDE V...

METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES

OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS

PEC ETCHING OF (20-2-1) SEMIPOLAR GALLIUM NITRIDE FOR EXTERNAL EFFI...

LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOL...

STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTI...