Daniel Hahn

Person

Cumberland, ME, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reduction of degradation due to hot carrier injection
- Patent number 9,537,001
- Issue date Jan 3, 2017
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of high-performance passive devices using existing opera...
- Patent number 8,987,107
- Issue date Mar 24, 2015
- Fairchild Semiconductor Corporation
- Daniel Hahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with opposite-polarity schottky diode field guard ring
- Patent number 8,736,013
- Issue date May 27, 2014
- Fairchild Semiconductor Corporation
- Chris Nassar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for enhancing field oxide
- Patent number 7,824,999
- Issue date Nov 2, 2010
- Fairchild Semiconductor Corporation
- Steven Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quasi self-aligned single polysilicon bipolar active device with in...
- Patent number 6,972,472
- Issue date Dec 6, 2005
- Fairchild Semiconductor Corporation
- Steven M. Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for BiCMOS isolated NMOS transistor
- Patent number 6,927,460
- Issue date Aug 9, 2005
- Fairchild Semiconductor Corporation
- Steven M. Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDD structure for ESD protection and method of fabrication
- Patent number 6,100,125
- Issue date Aug 8, 2000
- Fairchild Semiconductor Corp.
- Ronald Brett Hulfachor
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REDUCTION OF DEGRADATION DUE TO HOT CARRIER INJECTION
- Publication number 20160035883
- Publication date Feb 4, 2016
- Fairchild Semiconductor Corporation
- Jifa HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION OF HIGH-PERFORMANCE PASSIVE DEVICES USING EXISTING OPERA...
- Publication number 20140231952
- Publication date Aug 21, 2014
- Fairchild Semiconductor Corporation
- Daniel Hahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH OPPOSITE-POLARITY SCHOTTKY DIODE FIELD GUARD RING
- Publication number 20130277791
- Publication date Oct 24, 2013
- Chris Nassar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDING PAD STRUCTURE ALLOWING WIRE BONDING OVER AN ACTIVE AREA IN...
- Publication number 20090079082
- Publication date Mar 26, 2009
- Yong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ENHANCING FIELD OXIDE
- Publication number 20080113482
- Publication date May 15, 2008
- Steven M. Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for enhancing field oxide and integrated circuit with enhanc...
- Publication number 20050275058
- Publication date Dec 15, 2005
- Steven M. Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quasi self-aligned single polysilicon bipolar active device with in...
- Publication number 20040248357
- Publication date Dec 9, 2004
- Steven M. Leibiger
- H01 - BASIC ELECTRIC ELEMENTS

Daniel Hahn

Person

Patents Grantslast 30 patents

Reduction of degradation due to hot carrier injection

Production of high-performance passive devices using existing opera...

Schottky diode with opposite-polarity schottky diode field guard ring

Method for enhancing field oxide

Quasi self-aligned single polysilicon bipolar active device with in...

Method and structure for BiCMOS isolated NMOS transistor

LDD structure for ESD protection and method of fabrication

Patents Applicationslast 30 patents

REDUCTION OF DEGRADATION DUE TO HOT CARRIER INJECTION

PRODUCTION OF HIGH-PERFORMANCE PASSIVE DEVICES USING EXISTING OPERA...

SCHOTTKY DIODE WITH OPPOSITE-POLARITY SCHOTTKY DIODE FIELD GUARD RING

BONDING PAD STRUCTURE ALLOWING WIRE BONDING OVER AN ACTIVE AREA IN...

METHOD FOR ENHANCING FIELD OXIDE

Method for enhancing field oxide and integrated circuit with enhanc...

Quasi self-aligned single polysilicon bipolar active device with in...