Daniel J. Jaeger

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and method for random code generation
- Patent number 11,907,685
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Forming interconnect without gate cut isolation blocking opening fo...
- Patent number 11,056,398
- Issue date Jul 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Daniel J. Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact depth control
- Patent number 10,991,796
- Issue date Apr 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Lin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures of a semiconductor device having a wide gate p...
- Patent number 10,971,625
- Issue date Apr 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Michael V Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure
- Patent number 10,930,549
- Issue date Feb 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with self-aligned and non-self-aligned con...
- Patent number 10,833,160
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming gate structures for transistor devices on an IC...
- Patent number 10,755,982
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES Inc.
- Abu Naser M. Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor material in trenches having differe...
- Patent number 10,714,376
- Issue date Jul 14, 2020
- GLOBALFOUNDRIES Inc.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for reducing gate cut gouging and/or...
- Patent number 10,644,156
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for stringer defect reduction in a tr...
- Patent number 10,522,639
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure
- Patent number 10,460,986
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for stringer defect reduction in a tr...
- Patent number 10,418,455
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite contact etch stop layer
- Patent number 10,388,562
- Issue date Aug 20, 2019
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts formed with self-aligned cuts
- Patent number 10,373,875
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for self-aligned metal hard masks
- Patent number 10,340,142
- Issue date Jul 2, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for providing a pre-RMG replacement m...
- Patent number 10,325,819
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for replacement contact for a finFET...
- Patent number 10,269,654
- Issue date Apr 23, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a resistor structure between adjacent transistor...
- Patent number 10,249,616
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for reducing step height difference...
- Patent number 10,204,797
- Issue date Feb 12, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for constructing FINFET devices having a super st...
- Patent number 10,062,612
- Issue date Aug 28, 2018
- GLOBALFOUNDRIES Inc.
- David Paul Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial sacrificial dummy gate with CMOS device with high-k metal gate
- Patent number 9,853,116
- Issue date Dec 26, 2017
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage and well implantation method for semiconductor de...
- Patent number 9,780,002
- Issue date Oct 3, 2017
- GLOBALFOUNDRIES Inc.
- Xintuo Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming SADP on SRAM and SAQP on logic
- Patent number 9,761,452
- Issue date Sep 12, 2017
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for direct measurement of pitch-walking in lithographic mul...
- Patent number 9,711,624
- Issue date Jul 18, 2017
- GLOBALFOUNDRIES Inc.
- Fang Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device including silicon oxycarbon isolation structure
- Patent number 9,589,829
- Issue date Mar 7, 2017
- GLOBALFOUNDRIES Inc.
- Huy M. Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial sacrificial dummy gate with CMOS device with high-k metal gate
- Patent number 9,299,795
- Issue date Mar 29, 2016
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial sacrificial dummy gate with CMOS device with high-k metal gate
- Patent number 9,041,076
- Issue date May 26, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fin on local oxide
- Patent number 9,035,430
- Issue date May 19, 2015
- International Business Machines Corporation
- Reinaldo A. Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sealed shallow trench isolation region
- Patent number 8,859,388
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor field effect transistor (MOSFET) gate ter...
- Patent number 8,704,332
- Issue date Apr 22, 2014
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND METHOD FOR RANDOM CODE GENERATION
- Publication number 20210141610
- Publication date May 13, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FORMING INTERCONNECT WITHOUT GATE CUT ISOLATION BLOCKING OPENING FO...
- Publication number 20210028067
- Publication date Jan 28, 2021
- GLOBALFOUNDRIES INC.
- Daniel J. Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURES OF A SEMICONDUCTOR DEVICE HAVING A WIDE GATE P...
- Publication number 20200411689
- Publication date Dec 31, 2020
- GLOBALFOUNDRIES INC.
- MICHAEL V. AQUILINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...
- Publication number 20200335591
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT DEPTH CONTROL
- Publication number 20200203480
- Publication date Jun 25, 2020
- GLOBALFOUNDRIES INC.
- Lin HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE
- Publication number 20200013672
- Publication date Jan 9, 2020
- GLOBALFOUNDRIES INC.
- Jinsheng GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...
- Publication number 20190393077
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...
- Publication number 20190326408
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS FORMED WITH SELF-ALIGNED CUTS
- Publication number 20190295898
- Publication date Sep 26, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND SYSTEM FOR REDUCING GATE CUT GOUGING AND/OR...
- Publication number 20190280114
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE
- Publication number 20190237363
- Publication date Aug 1, 2019
- GLOBALFOUNDRIES INC.
- Jinsheng GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...
- Publication number 20190097015
- Publication date Mar 28, 2019
- GLOBALFOUDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE CONTACT ETCH STOP LAYER
- Publication number 20190057899
- Publication date Feb 21, 2019
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A RESISTOR STRUCTURE BETWEEN ADJACENT TRANSISTOR...
- Publication number 20180366461
- Publication date Dec 20, 2018
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR CONSTRUCTING FINFET DEVICES HAVING A SUPER ST...
- Publication number 20180102291
- Publication date Apr 12, 2018
- GLOBALFOUNDRIES INC.
- David Paul Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING SADP ON SRAM AND SAQP ON LOGIC
- Publication number 20180012760
- Publication date Jan 11, 2018
- GLOBALFOUNDRIES INC.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SACRIFICIAL DUMMY GATE WITH CMOS DEVICE WITH HIGH-K METAL GATE
- Publication number 20160099332
- Publication date Apr 7, 2016
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SACRIFICIAL DUMMY GATE WITH CMOS DEVICE WITH HIGH-K METAL GATE
- Publication number 20150187897
- Publication date Jul 2, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN ON LOCAL OXIDE
- Publication number 20150044843
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Michael V. AQUILINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SACRIFICIAL DUMMY GATE WITH CMOS DEVICE WITH HIGH-K METAL GATE
- Publication number 20140217481
- Publication date Aug 7, 2014
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN ON LOCAL OXIDE
- Publication number 20140061862
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Reinaldo A. VEGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEALED SHALLOW TRENCH ISOLATION REGION
- Publication number 20140015092
- Publication date Jan 16, 2014
- GLOBALFOUNDRIES INC.
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) GATE TER...
- Publication number 20130337624
- Publication date Dec 19, 2013
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) GATE TER...
- Publication number 20130334618
- Publication date Dec 19, 2013
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...
- Publication number 20130140670
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...
- Publication number 20120187522
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR INTEGRATED WITH METAL GATE CMOS DEVICES
- Publication number 20120139056
- Publication date Jun 7, 2012
- International Business Machines Corporation
- Thomas A. Wallner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Enhancing Photoresist Adhesion to Rare Earth Oxides
- Publication number 20110223756
- Publication date Sep 15, 2011
- James K. Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR INTEGRATED WITH METAL GATE CMOS DEVICES
- Publication number 20110057266
- Publication date Mar 10, 2011
- International Business Machines Corporation
- Thomas A. Wallner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS SIGE CHANNEL PFET AND SI CHANNEL NFET DEVICES WITH MINIMAL STI...
- Publication number 20100244198
- Publication date Sep 30, 2010
- International Business Machines Corporation
- Daniel J. Jaeger
- H01 - BASIC ELECTRIC ELEMENTS

Daniel J. Jaeger

Person

Patents Grantslast 30 patents

Structure and method for random code generation

Forming interconnect without gate cut isolation blocking opening fo...

Source/drain contact depth control

Epitaxial structures of a semiconductor device having a wide gate p...

Cap structure

Field-effect transistors with self-aligned and non-self-aligned con...

Methods of forming gate structures for transistor devices on an IC...

Method of forming semiconductor material in trenches having differe...

Methods, apparatus, and system for reducing gate cut gouging and/or...

Methods, apparatus and system for stringer defect reduction in a tr...

Cap structure

Methods, apparatus and system for stringer defect reduction in a tr...

Composite contact etch stop layer

Contacts formed with self-aligned cuts

Methods, apparatus and system for self-aligned metal hard masks

Methods, apparatus and system for providing a pre-RMG replacement m...

Methods, apparatus and system for replacement contact for a finFET...

Methods of forming a resistor structure between adjacent transistor...

Methods, apparatus, and system for reducing step height difference...

Method and system for constructing FINFET devices having a super st...

Partial sacrificial dummy gate with CMOS device with high-k metal gate

Threshold voltage and well implantation method for semiconductor de...

Devices and methods of forming SADP on SRAM and SAQP on logic

Methods for direct measurement of pitch-walking in lithographic mul...

FinFET device including silicon oxycarbon isolation structure

Partial sacrificial dummy gate with CMOS device with high-k metal gate

Partial sacrificial dummy gate with CMOS device with high-k metal gate

Semiconductor fin on local oxide

Sealed shallow trench isolation region

Metal oxide semiconductor field effect transistor (MOSFET) gate ter...

Patents Applicationslast 30 patents

STRUCTURE AND METHOD FOR RANDOM CODE GENERATION

FORMING INTERCONNECT WITHOUT GATE CUT ISOLATION BLOCKING OPENING FO...

EPITAXIAL STRUCTURES OF A SEMICONDUCTOR DEVICE HAVING A WIDE GATE P...

FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...

SOURCE/DRAIN CONTACT DEPTH CONTROL

CAP STRUCTURE

METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...

METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...

CONTACTS FORMED WITH SELF-ALIGNED CUTS

METHODS, APPARATUS, AND SYSTEM FOR REDUCING GATE CUT GOUGING AND/OR...

CAP STRUCTURE

METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...

COMPOSITE CONTACT ETCH STOP LAYER

METHODS OF FORMING A RESISTOR STRUCTURE BETWEEN ADJACENT TRANSISTOR...

METHOD AND SYSTEM FOR CONSTRUCTING FINFET DEVICES HAVING A SUPER ST...

DEVICES AND METHODS OF FORMING SADP ON SRAM AND SAQP ON LOGIC

PARTIAL SACRIFICIAL DUMMY GATE WITH CMOS DEVICE WITH HIGH-K METAL GATE

PARTIAL SACRIFICIAL DUMMY GATE WITH CMOS DEVICE WITH HIGH-K METAL GATE

SEMICONDUCTOR FIN ON LOCAL OXIDE

PARTIAL SACRIFICIAL DUMMY GATE WITH CMOS DEVICE WITH HIGH-K METAL GATE

SEMICONDUCTOR FIN ON LOCAL OXIDE

SEALED SHALLOW TRENCH ISOLATION REGION

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) GATE TER...

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) GATE TER...

STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...

STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...

BIPOLAR TRANSISTOR INTEGRATED WITH METAL GATE CMOS DEVICES

Method of Enhancing Photoresist Adhesion to Rare Earth Oxides

BIPOLAR TRANSISTOR INTEGRATED WITH METAL GATE CMOS DEVICES

CMOS SIGE CHANNEL PFET AND SI CHANNEL NFET DEVICES WITH MINIMAL STI...