David C. Burdeaux

Person

Tempe, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Wafer with semiconductor devices and integrated electrostatic disch...
- Patent number 12,362,294
- Issue date Jul 15, 2025
- NXP USA, INC.
- Colby Greg Rampley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier with a power transistor and an electrostatic discha...
- Patent number 12,166,455
- Issue date Dec 10, 2024
- NXP USA, INC.
- David Cobb Burdeaux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,971,613
- Issue date Apr 6, 2021
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,644,142
- Issue date May 5, 2020
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with shield structure, packaged device, and method of ma...
- Patent number 10,147,686
- Issue date Dec 4, 2018
- NXP USA, INC.
- Charles John Lessard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transistor die with drain via arrangement, and methods of manufactu...
- Patent number 10,103,233
- Issue date Oct 16, 2018
- NXP USA, INC.
- Ibrahim Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with vertical field floating rings and methods...
- Patent number 10,069,006
- Issue date Sep 4, 2018
- NXP USA, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with floating field plates
- Patent number 9,818,862
- Issue date Nov 14, 2017
- NXP USA, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with vertical field floating rings and method...
- Patent number 9,666,710
- Issue date May 30, 2017
- NXP USA, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with shield structure, packaged device, and method of ma...
- Patent number 9,653,410
- Issue date May 16, 2017
- NXP USA, INC.
- Damon Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched Faraday shielding
- Patent number 9,520,367
- Issue date Dec 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a device having a shield plate dopant region
- Patent number 9,443,975
- Issue date Sep 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having a shield plate dopant region and method of manufactur...
- Patent number 9,437,693
- Issue date Sep 6, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Customized shield plate for a field effect transistor
- Patent number 9,209,259
- Issue date Dec 8, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Agni Mitra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS minority carrier shunting
- Patent number 9,123,804
- Issue date Sep 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Methods of forming electronic elements with ESD protection
- Patent number 9,093,272
- Issue date Jul 28, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Daniel J. Lamey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with minority carrier shunt region
- Patent number 8,772,870
- Issue date Jul 8, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Customized shield plate for a field effect transistor
- Patent number 8,680,615
- Issue date Mar 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Agni Mitra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection using isolated diodes
- Patent number 8,537,512
- Issue date Sep 17, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Daniel J. Lamey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a barrier layer
- Patent number 7,595,257
- Issue date Sep 29, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Brant D. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit with isolated diode element and method thereof
- Patent number 7,592,673
- Issue date Sep 22, 2009
- FREESCALE SEMICONDUCTOR, INC.
- David C. Burdeaux
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WAFER WITH SEMICONDUCTOR DEVICES AND INTEGRATED ELECTROSTATIC DISCH...
- Publication number 20220392856
- Publication date Dec 8, 2022
- NXP USA, Inc.
- Colby Greg Ramply
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AMPLIFIER WITH A POWER TRANSISTOR AND AN ELECTROSTATIC DISCHA...
- Publication number 20220182023
- Publication date Jun 9, 2022
- NXP USA, Inc.
- David Cobb Burdeaux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20200227547
- Publication date Jul 16, 2020
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20190198623
- Publication date Jun 27, 2019
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH VERTICAL FIELD FLOATING RINGS AND METHOD...
- Publication number 20170250276
- Publication date Aug 31, 2017
- NXP USA, Inc.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Floating Field Plates
- Publication number 20170194488
- Publication date Jul 6, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ZIHAO M. GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH VERTICAL FIELD FLOATING RINGS AND METHOD...
- Publication number 20160343851
- Publication date Nov 24, 2016
- FREESCALE SEMICONDUCTOR, INC.
- ZIHAO M. GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A DEVICE HAVING A SHIELD PLATE DOPANT REGION
- Publication number 20160254380
- Publication date Sep 1, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING A SHIELD PLATE DOPANT REGION AND METHOD OF MANUFACTUR...
- Publication number 20160181378
- Publication date Jun 23, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED FARADAY SHIELDING
- Publication number 20160056114
- Publication date Feb 25, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE WITH MINORITY CARRIER SHUNT REGION
- Publication number 20140284716
- Publication date Sep 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUSTOMIZED SHIELD PLATE FOR A FIELD EFFECT TRANSISTOR
- Publication number 20140187012
- Publication date Jul 3, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Agni Mitra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Device with Minority Carrier Shunt Region
- Publication number 20140117446
- Publication date May 1, 2014
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING ELECTRONIC ELEMENTS WITH ESD PROTECTION
- Publication number 20140011344
- Publication date Jan 9, 2014
- FREESCALE SEMICONDUCTOR, INC.
- DANIEL J. LAMEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUSTOMIZED SHIELD PLATE FOR A FIELD EFFECT TRANSISTOR
- Publication number 20130146973
- Publication date Jun 13, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Agni Mitra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION USING ISOLATED DIODES
- Publication number 20100214704
- Publication date Aug 26, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Daniel J. Lamey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including a barrier layer and a process for formi...
- Publication number 20080048177
- Publication date Feb 28, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Brant D. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED DIODE ELEMENT AND METHOD THEREOF
- Publication number 20070228475
- Publication date Oct 4, 2007
- David C. Burdeaux
- H01 - BASIC ELECTRIC ELEMENTS

David C. Burdeaux

Person

Patents Grantslast 30 patents

Wafer with semiconductor devices and integrated electrostatic disch...

Power amplifier with a power transistor and an electrostatic discha...

Semiconductor devices with doped regions functioning as enhanced re...

Semiconductor devices with doped regions functioning as enhanced re...

Transistor with shield structure, packaged device, and method of ma...

Transistor die with drain via arrangement, and methods of manufactu...

Semiconductor device with vertical field floating rings and methods...

Semiconductor device with floating field plates

Semiconductor devices with vertical field floating rings and method...

Transistor with shield structure, packaged device, and method of ma...

Trenched Faraday shielding

Method of manufacturing a device having a shield plate dopant region

Device having a shield plate dopant region and method of manufactur...

Customized shield plate for a field effect transistor

LDMOS minority carrier shunting

Methods of forming electronic elements with ESD protection

LDMOS device with minority carrier shunt region

Customized shield plate for a field effect transistor

ESD protection using isolated diodes

Process of forming an electronic device including a barrier layer

ESD protection circuit with isolated diode element and method thereof

Patents Applicationslast 30 patents

WAFER WITH SEMICONDUCTOR DEVICES AND INTEGRATED ELECTROSTATIC DISCH...

POWER AMPLIFIER WITH A POWER TRANSISTOR AND AN ELECTROSTATIC DISCHA...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICES WITH VERTICAL FIELD FLOATING RINGS AND METHOD...

Semiconductor Device with Floating Field Plates

SEMICONDUCTOR DEVICES WITH VERTICAL FIELD FLOATING RINGS AND METHOD...

METHOD OF MANUFACTURING A DEVICE HAVING A SHIELD PLATE DOPANT REGION

DEVICE HAVING A SHIELD PLATE DOPANT REGION AND METHOD OF MANUFACTUR...

TRENCHED FARADAY SHIELDING

LDMOS DEVICE WITH MINORITY CARRIER SHUNT REGION

CUSTOMIZED SHIELD PLATE FOR A FIELD EFFECT TRANSISTOR

LDMOS Device with Minority Carrier Shunt Region

METHODS OF FORMING ELECTRONIC ELEMENTS WITH ESD PROTECTION

CUSTOMIZED SHIELD PLATE FOR A FIELD EFFECT TRANSISTOR

ESD PROTECTION USING ISOLATED DIODES

Electronic device including a barrier layer and a process for formi...

ESD PROTECTION CIRCUIT WITH ISOLATED DIODE ELEMENT AND METHOD THEREOF