David C. Gilmer

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitors, systems, and methods
- Patent number 8,432,020
- Issue date Apr 30, 2013
- Sematech, Inc.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating dual-metal gate device
- Patent number 8,178,401
- Issue date May 15, 2012
- FREESCALE SEMICONDUCTOR, INC.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device comprising a gate electrode including a metal-con...
- Patent number 7,868,389
- Issue date Jan 11, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal carbide gate with an electropos...
- Patent number 7,683,439
- Issue date Mar 23, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Srikanth B. Samavedam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making metal gate transistors
- Patent number 7,655,550
- Issue date Feb 2, 2010
- FREESCALE SEMICONDUCTOR, INC.
- James K. Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a transistor having a counter-doped...
- Patent number 7,432,164
- Issue date Oct 7, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device comprising a gate electrode including a metal-con...
- Patent number 7,297,588
- Issue date Nov 20, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a layer using a purging gas in a semiconductor p...
- Patent number 7,015,153
- Issue date Mar 21, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating dual-metal gate device
- Patent number 6,972,224
- Issue date Dec 6, 2005
- FREESCALE SEMICONDUCTOR, INC.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a dual gate oxide device using a metal oxide and...
- Patent number 6,787,421
- Issue date Sep 7, 2004
- FREESCALE SEMICONDUCTOR, INC.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with layered high-K gate dielectric and method therefor
- Patent number 6,717,226
- Issue date Apr 6, 2004
- Motorola, Inc.
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of recrystallizing an amorphous region of a semiconductor
- Patent number 6,573,160
- Issue date Jun 3, 2003
- Motorola, Inc.
- William J. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a hafnium-based insulating film
- Patent number 6,348,386
- Issue date Feb 19, 2002
- Motorola, Inc.
- David Christopher Gilmer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Capacitors, Systems, and Methods
- Publication number 20110298090
- Publication date Dec 8, 2011
- SEMATECH, Inc.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Modulation of Tantalum-Based Electrode Workfunction
- Publication number 20090286387
- Publication date Nov 19, 2009
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A METAL CARBIDE GATE WITH AN ELECTROPOS...
- Publication number 20080224185
- Publication date Sep 18, 2008
- Srikanth B. Samavedam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE COMPRISING A GATE ELECTRODE INCLUDING A METAL-CON...
- Publication number 20080048270
- Publication date Feb 28, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF MAKING METAL GATE TRANSISTORS
- Publication number 20080001202
- Publication date Jan 3, 2008
- James K. Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxynitride gate
- Publication number 20070284677
- Publication date Dec 13, 2007
- Weng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising a transistor having a counter-doped...
- Publication number 20070178633
- Publication date Aug 2, 2007
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING DUAL-METAL GATE DEVICE
- Publication number 20070077698
- Publication date Apr 5, 2007
- FREESCALE SEMICONDUCTOR, INC.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor device having a high-k dielectric
- Publication number 20060234436
- Publication date Oct 19, 2006
- Hsing H. Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device comprising a gate electrode including a metal-con...
- Publication number 20060172516
- Publication date Aug 3, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming gas anneal process for high dielectric constant gate dielec...
- Publication number 20060094259
- Publication date May 4, 2006
- Freescale Semiconductor, Inc.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating dual-metal gate device
- Publication number 20050282326
- Publication date Dec 22, 2005
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Blocking layer for silicide uniformity in a semiconductor transistor
- Publication number 20050136633
- Publication date Jun 23, 2005
- William J. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating dual-metal gate device
- Publication number 20040191974
- Publication date Sep 30, 2004
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a dual gate oxide device using a metal oxide and...
- Publication number 20040032001
- Publication date Feb 19, 2004
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate dielectric and method therefor
- Publication number 20030176049
- Publication date Sep 18, 2003
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for forming a semiconductor device utilizing a...
- Publication number 20020048910
- Publication date Apr 25, 2002
- William J. Taylor, Jr.
- H01 - BASIC ELECTRIC ELEMENTS

David C. Gilmer

Person

Patents Grantslast 30 patents

Capacitors, systems, and methods

Method for fabricating dual-metal gate device

Electronic device comprising a gate electrode including a metal-con...

Semiconductor device having a metal carbide gate with an electropos...

Method of making metal gate transistors

Semiconductor device comprising a transistor having a counter-doped...

Electronic device comprising a gate electrode including a metal-con...

Method for forming a layer using a purging gas in a semiconductor p...

Method for fabricating dual-metal gate device

Method for forming a dual gate oxide device using a metal oxide and...

Transistor with layered high-K gate dielectric and method therefor

Method of recrystallizing an amorphous region of a semiconductor

Method for making a hafnium-based insulating film

Patents Applicationslast 30 patents

Capacitors, Systems, and Methods

Modulation of Tantalum-Based Electrode Workfunction

SEMICONDUCTOR DEVICE HAVING A METAL CARBIDE GATE WITH AN ELECTROPOS...

ELECTRONIC DEVICE COMPRISING A GATE ELECTRODE INCLUDING A METAL-CON...

A METHOD OF MAKING METAL GATE TRANSISTORS

Metal oxynitride gate

Semiconductor device comprising a transistor having a counter-doped...

METHOD FOR FABRICATING DUAL-METAL GATE DEVICE

Method of forming a semiconductor device having a high-k dielectric

Electronic device comprising a gate electrode including a metal-con...

Forming gas anneal process for high dielectric constant gate dielec...

Method for fabricating dual-metal gate device

Blocking layer for silicide uniformity in a semiconductor transistor

Method for fabricating dual-metal gate device

Method for forming a dual gate oxide device using a metal oxide and...

Gate dielectric and method therefor

Method and apparatus for forming a semiconductor device utilizing a...