David Charles Brady

Person

Windermere, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and method for the abatement of toxic constituents of efflue...
- Patent number 6,800,255
- Issue date Oct 5, 2004
- Agere Systems, INC
- David Charles Brady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for making an integrated circuit device including a graded,...
- Patent number 6,670,242
- Issue date Dec 30, 2003
- Agere Systems Inc.
- David Charles Brady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for oxide/silicon nitride interface substructu...
- Patent number 6,548,422
- Issue date Apr 15, 2003
- Agere Systems, INC
- Pradip K. Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locos isolation process using a layered pad nitride and dry field o...
- Patent number 6,380,606
- Issue date Apr 30, 2002
- Agere Systems Guardian Corp.
- David C. Brady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for forming a uniform thin gate oxide layer
- Patent number 6,281,138
- Issue date Aug 28, 2001
- Agere Systems Guardian Corp.
- David C. Brady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System and method for forming a uniform thin gate oxide layer
- Patent number 6,246,095
- Issue date Jun 12, 2001
- Agere Systems Guardian Corp.
- David C. Brady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locos isolation process using a layered pad nitride and dry field o...
- Patent number 6,090,686
- Issue date Jul 18, 2000
- Lucent Technologies, Inc.
- David C. Brady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of SiD.sub.4 for deposition of ultra thin and controllable oxides
- Patent number 6,025,280
- Issue date Feb 15, 2000
- Lucent Technologies Inc.
- David C. Brady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
In-situ doped silicon layers
- Patent number 5,966,627
- Issue date Oct 12, 1999
- Lucent Technologies Inc.
- David C. Brady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a high quality ultrathin gate oxide layer
- Patent number 5,940,736
- Issue date Aug 17, 1999
- Lucent Technologies Inc.
- David C. Brady
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Structure for oxide/silicon nitride interface substructure improvem...
- Publication number 20030186499
- Publication date Oct 2, 2003
- Agere Systems Inc.
- Pradip K. Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for the abatement of toxic constituents of efflue...
- Publication number 20030138367
- Publication date Jul 24, 2003
- David Charles Brady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND STRUCTURE FOR OXIDE/SILICON NITRIDE INTERFACE SUBSTRUCTU...
- Publication number 20030060058
- Publication date Mar 27, 2003
- Pradip K. Roy
- H01 - BASIC ELECTRIC ELEMENTS

David Charles Brady

Person

Patents Grantslast 30 patents

System and method for the abatement of toxic constituents of efflue...

Method for making an integrated circuit device including a graded,...

Method and structure for oxide/silicon nitride interface substructu...

Locos isolation process using a layered pad nitride and dry field o...

System and method for forming a uniform thin gate oxide layer

System and method for forming a uniform thin gate oxide layer

Locos isolation process using a layered pad nitride and dry field o...

Use of SiD.sub.4 for deposition of ultra thin and controllable oxides

In-situ doped silicon layers

Method for forming a high quality ultrathin gate oxide layer

Patents Applicationslast 30 patents

Structure for oxide/silicon nitride interface substructure improvem...

System and method for the abatement of toxic constituents of efflue...

METHOD AND STRUCTURE FOR OXIDE/SILICON NITRIDE INTERFACE SUBSTRUCTU...