David Charles Sheridan

Person

Williston, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical junction field effect transistors with improved thermal ch...
- Patent number 8,884,270
- Issue date Nov 11, 2014
- Power Integrations, Inc.
- Janna Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided trench contact to buried conductive layer
- Patent number 8,872,281
- Issue date Oct 28, 2014
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned semiconductor devices with reduced gate-source leakage...
- Patent number 8,659,057
- Issue date Feb 25, 2014
- Power Integrations, Inc.
- Andrew Ritenour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical junction field effect transistors having sloped sidewalls...
- Patent number 8,513,675
- Issue date Aug 20, 2013
- Power Integrations, Inc.
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with non-punch-through semiconductor channels...
- Patent number 8,507,335
- Issue date Aug 13, 2013
- Power Integrations, Inc.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making semiconductor devices having implanted sidewalls...
- Patent number 8,466,017
- Issue date Jun 18, 2013
- Power Integrations, Inc.
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided trench contact to buried conductive layer
- Patent number 8,338,265
- Issue date Dec 25, 2012
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral passive device having dual annular electrodes
- Patent number 8,288,244
- Issue date Oct 16, 2012
- International Business Machines Corporation
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical junction field effect transistors having sloped sidewalls...
- Patent number 8,202,772
- Issue date Jun 19, 2012
- SS SC IP, LLC
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterostructure barrier varactor
- Patent number 8,163,612
- Issue date Apr 24, 2012
- International Business Machines Corporation
- Erik M. Dahlstrom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench based far subcollector reachthrough
- Patent number 8,105,924
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical junction field effect transistors having sloped sidewalls...
- Patent number 8,058,655
- Issue date Nov 15, 2011
- SS SC IP, LLC
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied impurity profile region formation for varying breakdown volt...
- Patent number 8,030,167
- Issue date Oct 4, 2011
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design structure with a deep sub-collector, a reach-through structu...
- Patent number 8,015,538
- Issue date Sep 6, 2011
- International Business Machines Corporation
- Douglas D Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with non-punch-through semiconductor channels...
- Patent number 7,994,548
- Issue date Aug 9, 2011
- SemiSouth Laboratories, Inc.
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with non-punch-through semiconductor channels...
- Patent number 7,977,713
- Issue date Jul 12, 2011
- SemiSouth Laboratories, Inc.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral passive device having dual annular electrodes
- Patent number 7,821,097
- Issue date Oct 26, 2010
- International Business Machines Corporation
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuneable semiconductor device with discontinuous portions in the su...
- Patent number 7,709,930
- Issue date May 4, 2010
- International Business Machines Corporation
- Andreas Stricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming hyper-abrupt junction varactors
- Patent number 7,700,453
- Issue date Apr 20, 2010
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterostructure barrier varactor
- Patent number 7,696,604
- Issue date Apr 13, 2010
- International Business Machines Corporation
- Erik M. Dahlstrom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench based far subcollector reachthrough
- Patent number 7,691,734
- Issue date Apr 6, 2010
- International Business Machines Corporation
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied impurity profile region formation for varying breakdown volt...
- Patent number 7,550,787
- Issue date Jun 23, 2009
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried subcollector for high frequency passive semiconductor devices
- Patent number 7,491,632
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral silicided diodes
- Patent number 7,381,997
- Issue date Jun 3, 2008
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral silicided diodes
- Patent number 7,335,927
- Issue date Feb 26, 2008
- Internatioanl Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for hyper-abrupt junction varactors
- Patent number 7,253,073
- Issue date Aug 7, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance integrated vertical transistors and method of maki...
- Patent number 7,217,628
- Issue date May 15, 2007
- International Business Machines Corporation
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded junction termination extensions for electronic devices
- Patent number 7,214,627
- Issue date May 8, 2007
- Auburn University
- J. Neil Merrett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of hyper-abrupt junction varactors
- Patent number 7,183,628
- Issue date Feb 27, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactors for CMOS and BiCMOS technologies
- Patent number 7,135,375
- Issue date Nov 14, 2006
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICIDED TRENCH CONTACT TO BURIED CONDUCTIVE LAYER
- Publication number 20140239498
- Publication date Aug 28, 2014
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SEMICONDUCTOR DEVICES WITH REDUCED GATE-SOURCE LEAKAGE...
- Publication number 20130011979
- Publication date Jan 10, 2013
- SS SC IP, LLC
- Andrew RITENOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTORS WITH IMPROVED THERMAL CH...
- Publication number 20120261675
- Publication date Oct 18, 2012
- SS SC IP, LLC
- Janna CASADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTORS HAVING SLOPED SIDEWALLS...
- Publication number 20120223340
- Publication date Sep 6, 2012
- SS SC IP, LLC
- David C. SHERIDAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SEMICONDUCTOR DEVICES WITH REDUCED GATE-SOURCE LEAKAGE...
- Publication number 20110291107
- Publication date Dec 1, 2011
- SEMISOUTH LABORATORIES, INC.
- Andrew RITENOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...
- Publication number 20110217829
- Publication date Sep 8, 2011
- SEMISOUTH LABORATORIES, INC.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING SEMICONDUCTOR DEVICES HAVING IMPLANTED SIDEWALLS...
- Publication number 20110133212
- Publication date Jun 9, 2011
- SEMISOUTH LABORATORIES, INC.
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTORS HAVING SLOPED SIDEWALLS...
- Publication number 20110020991
- Publication date Jan 27, 2011
- SEMISOUTH LABORATORIES, INC.
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL PASSIVE DEVICE HAVING DUAL ANNULAR ELECTRODES
- Publication number 20100279483
- Publication date Nov 4, 2010
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTORS HAVING SLOPED SIDEWALLS...
- Publication number 20100148186
- Publication date Jun 17, 2010
- SEMISOUTH LABORATORIES, INC.
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicided Trench Contact to Buried Conductive Layer
- Publication number 20100117237
- Publication date May 13, 2010
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH BASED FAR SUBCOLLECTOR REACHTHROUGH
- Publication number 20100117189
- Publication date May 13, 2010
- International Business Machines Corporation
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM HETEROSTRUCTURE BARRIER VARACTOR
- Publication number 20100093148
- Publication date Apr 15, 2010
- International Business Machines Corporation
- Erik M. Dahlstrom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...
- Publication number 20090278177
- Publication date Nov 12, 2009
- SEMISOUTH LABORATORIES, INC.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...
- Publication number 20090278137
- Publication date Nov 12, 2009
- SEMISOUTH LABORATORIES, INC.
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM HETEROSTRUCTURE BARRIER VARACTOR
- Publication number 20090101887
- Publication date Apr 23, 2009
- Erik M. Dahlstrom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH BASED FAR SUBCOLLECTOR REACHTHROUGH
- Publication number 20080211064
- Publication date Sep 4, 2008
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20080087978
- Publication date Apr 17, 2008
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20080092094
- Publication date Apr 17, 2008
- INTERNATIONAL BUSINESS MACHISNES CORPORATION
- Douglas D. COOLBAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SILICIDED DIODES
- Publication number 20080067623
- Publication date Mar 20, 2008
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL PASSIVE DEVICE HAVING DUAL ANNULAR ELECTRODES
- Publication number 20070278614
- Publication date Dec 6, 2007
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...
- Publication number 20070275534
- Publication date Nov 29, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNEABLE SEMICONDUCTOR DEVICE
- Publication number 20070215978
- Publication date Sep 20, 2007
- International Business Machines Corporation
- Andreas Stricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SILICIDED DIODES
- Publication number 20070176252
- Publication date Aug 2, 2007
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR HYPER-ABRUPT JUNCTION VARACTORS
- Publication number 20070178656
- Publication date Aug 2, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED SUBCOLLECTOR FOR HIGH FREQUENCY PASSIVE DEVICES
- Publication number 20070105354
- Publication date May 10, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance integrated vertical transistors and method of maki...
- Publication number 20070001264
- Publication date Jan 4, 2007
- International Business Machines Corporation
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...
- Publication number 20060270203
- Publication date Nov 30, 2006
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ION IMPLANTATION BY ION SCATTERING
- Publication number 20060234484
- Publication date Oct 19, 2006
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Graded junction termination extensions for electronic devices
- Publication number 20060172543
- Publication date Aug 3, 2006
- J. Neil Merrett
- H01 - BASIC ELECTRIC ELEMENTS

David Charles Sheridan

Person

Patents Grantslast 30 patents

Vertical junction field effect transistors with improved thermal ch...

Silicided trench contact to buried conductive layer

Self-aligned semiconductor devices with reduced gate-source leakage...

Vertical junction field effect transistors having sloped sidewalls...

Semiconductor devices with non-punch-through semiconductor channels...

Methods of making semiconductor devices having implanted sidewalls...

Silicided trench contact to buried conductive layer

Lateral passive device having dual annular electrodes

Vertical junction field effect transistors having sloped sidewalls...

Silicon germanium heterostructure barrier varactor

Deep trench based far subcollector reachthrough

Vertical junction field effect transistors having sloped sidewalls...

Varied impurity profile region formation for varying breakdown volt...

Design structure with a deep sub-collector, a reach-through structu...

Semiconductor devices with non-punch-through semiconductor channels...

Semiconductor devices with non-punch-through semiconductor channels...

Lateral passive device having dual annular electrodes

Tuneable semiconductor device with discontinuous portions in the su...

Method for forming hyper-abrupt junction varactors

Silicon germanium heterostructure barrier varactor

Deep trench based far subcollector reachthrough

Varied impurity profile region formation for varying breakdown volt...

Buried subcollector for high frequency passive semiconductor devices

Lateral silicided diodes

Lateral silicided diodes

Structure and method for hyper-abrupt junction varactors

High performance integrated vertical transistors and method of maki...

Graded junction termination extensions for electronic devices

Structure and method of hyper-abrupt junction varactors

Varactors for CMOS and BiCMOS technologies

Patents Applicationslast 30 patents

SILICIDED TRENCH CONTACT TO BURIED CONDUCTIVE LAYER

SELF-ALIGNED SEMICONDUCTOR DEVICES WITH REDUCED GATE-SOURCE LEAKAGE...

VERTICAL JUNCTION FIELD EFFECT TRANSISTORS WITH IMPROVED THERMAL CH...

VERTICAL JUNCTION FIELD EFFECT TRANSISTORS HAVING SLOPED SIDEWALLS...

SELF-ALIGNED SEMICONDUCTOR DEVICES WITH REDUCED GATE-SOURCE LEAKAGE...

SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...

METHODS OF MAKING SEMICONDUCTOR DEVICES HAVING IMPLANTED SIDEWALLS...

VERTICAL JUNCTION FIELD EFFECT TRANSISTORS HAVING SLOPED SIDEWALLS...

LATERAL PASSIVE DEVICE HAVING DUAL ANNULAR ELECTRODES

VERTICAL JUNCTION FIELD EFFECT TRANSISTORS HAVING SLOPED SIDEWALLS...

Silicided Trench Contact to Buried Conductive Layer

DEEP TRENCH BASED FAR SUBCOLLECTOR REACHTHROUGH

SILICON GERMANIUM HETEROSTRUCTURE BARRIER VARACTOR

SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...

SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...

SILICON GERMANIUM HETEROSTRUCTURE BARRIER VARACTOR

DEEP TRENCH BASED FAR SUBCOLLECTOR REACHTHROUGH

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

LATERAL SILICIDED DIODES

LATERAL PASSIVE DEVICE HAVING DUAL ANNULAR ELECTRODES

VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...

TUNEABLE SEMICONDUCTOR DEVICE

LATERAL SILICIDED DIODES

STRUCTURE AND METHOD FOR HYPER-ABRUPT JUNCTION VARACTORS

BURIED SUBCOLLECTOR FOR HIGH FREQUENCY PASSIVE DEVICES

High performance integrated vertical transistors and method of maki...

VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...

METHOD AND STRUCTURE FOR ION IMPLANTATION BY ION SCATTERING

Graded junction termination extensions for electronic devices