David L. Bergeron

Person

Winooski, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench-defined semiconductor structure
- Patent number 4,547,793
- Issue date Oct 15, 1985
- International Business Machines Corporation
- David L. Bergeron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a saturation-limited bipolar transistor device
- Patent number 4,446,611
- Issue date May 8, 1984
- International Business Machines Corporation
- David L. Bergeron
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Programmable bipolar structures
- Patent number 4,412,308
- Issue date Oct 25, 1983
- International Business Machines Corporation
- David L. Bergeron
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming an integrated circuit
- Patent number 4,395,812
- Issue date Aug 2, 1983
- IBM Corporation
- David L. Bergeron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Saturation-limited bipolar transistor device
- Patent number 4,390,890
- Issue date Jun 28, 1983
- International Business Machines Corporation
- David L. Bergeron
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Schottky barrier diode with controlled characteristics and fabricat...
- Patent number 4,357,178
- Issue date Nov 2, 1982
- IBM Corporation
- David L. Bergeron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar compatible electrically alterable read-only memory
- Patent number 4,344,222
- Issue date Aug 17, 1982
- IBM Corporation
- David L. Bergeron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and process for optimizing the characteristics of I.sup.2...
- Patent number 4,326,212
- Issue date Apr 20, 1982
- IBM Corporation
- David L. Bergeron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense high performance JFET compatible with NPN transistor formatio...
- Patent number 4,314,267
- Issue date Feb 2, 1982
- IBM Corporation
- David L. Bergeron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage compensation of temperature coefficient of resistance in an...
- Patent number 4,229,753
- Issue date Oct 21, 1980
- International Business Machines Corporation
- David L. Bergeron
- G05 - CONTROLLING REGULATING
Information Patent Grant
Hardened photoresist master image mask process
- Patent number 4,201,800
- Issue date May 6, 1980
- International Business Machines Corp.
- George E. Alcorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized oxidation enhancement for an integrated injection logic c...
- Patent number 4,157,268
- Issue date Jun 5, 1979
- International Business Machines Corporation
- David L. Bergeron
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPN/PNP Fabrication process with improved alignment
- Patent number 4,110,126
- Issue date Aug 29, 1978
- International Business Machines Corporation
- David L. Bergeron
- H01 - BASIC ELECTRIC ELEMENTS

David L. Bergeron

Person

Patents Grantslast 30 patents

Trench-defined semiconductor structure

Method of making a saturation-limited bipolar transistor device

Programmable bipolar structures

Forming an integrated circuit

Saturation-limited bipolar transistor device

Schottky barrier diode with controlled characteristics and fabricat...

Bipolar compatible electrically alterable read-only memory

Structure and process for optimizing the characteristics of I.sup.2...

Dense high performance JFET compatible with NPN transistor formatio...

Voltage compensation of temperature coefficient of resistance in an...

Hardened photoresist master image mask process

Localized oxidation enhancement for an integrated injection logic c...

NPN/PNP Fabrication process with improved alignment