David Laforet

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor device having a cell field and method of fabricating a g...
- Patent number 12,230,706
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having a drift region with a graded doping profile and metho...
- Patent number 11,848,379
- Issue date Dec 19, 2023
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,764,272
- Issue date Sep 19, 2023
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device and method of fabricating a gate of a transistor...
- Patent number 11,600,723
- Issue date Mar 7, 2023
- Infineon Technologies Austria AG
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a transistor cell region and a terminat...
- Patent number 11,462,620
- Issue date Oct 4, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,296,218
- Issue date Apr 5, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Needle cell trench MOSFET
- Patent number 11,251,275
- Issue date Feb 15, 2022
- Infineon Technologies Austria AG
- Christof Altstaetter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge compensation MOSFET with graded epi profile and methods of m...
- Patent number 11,158,735
- Issue date Oct 26, 2021
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with needle-shaped field plate structures
- Patent number 10,872,957
- Issue date Dec 22, 2020
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an edge termination area with trench el...
- Patent number 10,868,173
- Issue date Dec 15, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with gate resistor
- Patent number 10,811,531
- Issue date Oct 20, 2020
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a reduced surface doping in an edge ter...
- Patent number 10,727,331
- Issue date Jul 28, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having different gate crossings, and met...
- Patent number 10,629,595
- Issue date Apr 21, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor and method for forming the semiconductor t...
- Patent number 10,573,731
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming silicon oxide layers by radical oxidation and semiconductor...
- Patent number 10,566,426
- Issue date Feb 18, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with needle-shaped field plate structures in a...
- Patent number 10,510,846
- Issue date Dec 17, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing a power MOSFET
- Patent number 10,453,929
- Issue date Oct 22, 2019
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a trench gate
- Patent number 10,269,953
- Issue date Apr 23, 2019
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced gate charge field-effect transistor
- Patent number 10,205,015
- Issue date Feb 12, 2019
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with needle-shaped field plates and a gate str...
- Patent number 10,050,113
- Issue date Aug 14, 2018
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a termination mesa between a termination...
- Patent number 9,972,714
- Issue date May 15, 2018
- Infineon Technologies Austria AG
- David LaForet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with trench gate by...
- Patent number 9,865,726
- Issue date Jan 9, 2018
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a contact structure directly adjoini...
- Patent number 9,847,395
- Issue date Dec 19, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with field electrode and contact structure
- Patent number 9,799,738
- Issue date Oct 24, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced gate charge field-effect transistor
- Patent number 9,755,066
- Issue date Sep 5, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a field electrode
- Patent number 9,728,614
- Issue date Aug 8, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with seperate gate and field plate trenches
- Patent number 9,680,004
- Issue date Jun 13, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing switching losses associated with a synchronous rectificati...
- Patent number 9,621,058
- Issue date Apr 11, 2017
- Infineon Technologies Austria AG
- Cesar Augusto Braz
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device comprising a field electrode
- Patent number 9,536,960
- Issue date Jan 3, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a gate trench with thick bottom oxide
- Patent number 9,287,376
- Issue date Mar 15, 2016
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063794
- Publication date Feb 20, 2025
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240395926
- Publication date Nov 28, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240339507
- Publication date Oct 10, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING A CELL FIELD AND METHOD OF FABRICATING A G...
- Publication number 20230178647
- Publication date Jun 8, 2023
- Infineon Technologies Austria AG
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device and Method of Fabricating a Transistor Device
- Publication number 20230055891
- Publication date Feb 23, 2023
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTU...
- Publication number 20220376062
- Publication date Nov 24, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET HAVING A DRIFT REGION WITH A GRADED DOPING PROFILE AND METHO...
- Publication number 20220013665
- Publication date Jan 13, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210367045
- Publication date Nov 25, 2021
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD OF FABRICATING A GATE OF A TRANSISTOR...
- Publication number 20210249534
- Publication date Aug 12, 2021
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Compensation MOSFET with Graded Epi Profile and Methods of M...
- Publication number 20210242340
- Publication date Aug 5, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRANSISTOR CELL REGION AND A TERMINAT...
- Publication number 20210066459
- Publication date Mar 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20200365724
- Publication date Nov 19, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN EDGE TERMINATION AREA WITH TRENCH EL...
- Publication number 20200328303
- Publication date Oct 15, 2020
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Needle-Shaped Field Plate Structures
- Publication number 20200127102
- Publication date Apr 23, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Needle Cell Trench MOSFET
- Publication number 20200052077
- Publication date Feb 13, 2020
- Christof Altstaetter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with Gate Resistor
- Publication number 20190267487
- Publication date Aug 29, 2019
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Different Gate Crossings, and Met...
- Publication number 20190006357
- Publication date Jan 3, 2019
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Reduced Surface Doping in an Edge Ter...
- Publication number 20190006513
- Publication date Jan 3, 2019
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SILICON OXIDE LAYERS BY RADICAL OXIDATION AND SEMICONDUCTOR...
- Publication number 20180175150
- Publication date Jun 21, 2018
- INFINEON TECHNOLOGIES AG
- Anton MAUDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Trench Gate
- Publication number 20180122934
- Publication date May 3, 2018
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Gate Charge Field-Effect Transistor
- Publication number 20170345924
- Publication date Nov 30, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor and Method for Forming the Semiconductor T...
- Publication number 20170271491
- Publication date Sep 21, 2017
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Needle-Shaped Field Plate Structures in a...
- Publication number 20170250255
- Publication date Aug 31, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Needle-Shaped Field Plates and a Gate Str...
- Publication number 20170250256
- Publication date Aug 31, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Manufacturing a Power MOSFET
- Publication number 20170236910
- Publication date Aug 17, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Gate Charge Field-Effect Transistor
- Publication number 20170154993
- Publication date Jun 1, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device with Trench Gate by...
- Publication number 20170110573
- Publication date Apr 20, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Field Electrode
- Publication number 20170104078
- Publication date Apr 13, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts
- Publication number 20170077227
- Publication date Mar 16, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including a Contact Structure Directly Adjoini...
- Publication number 20170005171
- Publication date Jan 5, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS

David Laforet

Person

Patents Grantslast 30 patents

Transistor device having a cell field and method of fabricating a g...

MOSFET having a drift region with a graded doping profile and metho...

Semiconductor device and method of manufacturing the same

Transistor device and method of fabricating a gate of a transistor...

Semiconductor device having a transistor cell region and a terminat...

Semiconductor device

Needle cell trench MOSFET

Charge compensation MOSFET with graded epi profile and methods of m...

Semiconductor device with needle-shaped field plate structures

Semiconductor device having an edge termination area with trench el...

Transistor device with gate resistor

Semiconductor device having a reduced surface doping in an edge ter...

Power semiconductor device having different gate crossings, and met...

Semiconductor transistor and method for forming the semiconductor t...

Forming silicon oxide layers by radical oxidation and semiconductor...

Semiconductor device with needle-shaped field plate structures in a...

Methods of manufacturing a power MOSFET

Semiconductor device having a trench gate

Reduced gate charge field-effect transistor

Semiconductor device with needle-shaped field plates and a gate str...

Semiconductor device with a termination mesa between a termination...

Method of manufacturing a semiconductor device with trench gate by...

Semiconductor device including a contact structure directly adjoini...

Semiconductor device with field electrode and contact structure

Reduced gate charge field-effect transistor

Semiconductor device comprising a field electrode

Power MOSFET with seperate gate and field plate trenches

Reducing switching losses associated with a synchronous rectificati...

Semiconductor device comprising a field electrode

Method of manufacturing a gate trench with thick bottom oxide

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

TRANSISTOR DEVICE HAVING A CELL FIELD AND METHOD OF FABRICATING A G...

Transistor Device and Method of Fabricating a Transistor Device

SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTU...

MOSFET HAVING A DRIFT REGION WITH A GRADED DOPING PROFILE AND METHO...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR DEVICE AND METHOD OF FABRICATING A GATE OF A TRANSISTOR...

Charge Compensation MOSFET with Graded Epi Profile and Methods of M...

SEMICONDUCTOR DEVICE HAVING A TRANSISTOR CELL REGION AND A TERMINAT...

Semiconductor Device

SEMICONDUCTOR DEVICE HAVING AN EDGE TERMINATION AREA WITH TRENCH EL...

Semiconductor Device with Needle-Shaped Field Plate Structures

Needle Cell Trench MOSFET

Transistor Device with Gate Resistor

Power Semiconductor Device Having Different Gate Crossings, and Met...

Semiconductor Device Having a Reduced Surface Doping in an Edge Ter...

FORMING SILICON OXIDE LAYERS BY RADICAL OXIDATION AND SEMICONDUCTOR...

Semiconductor Device Having a Trench Gate

Reduced Gate Charge Field-Effect Transistor

Semiconductor Transistor and Method for Forming the Semiconductor T...

Semiconductor Device with Needle-Shaped Field Plate Structures in a...

Semiconductor Device with Needle-Shaped Field Plates and a Gate Str...

Methods of Manufacturing a Power MOSFET

Reduced Gate Charge Field-Effect Transistor

Method of Manufacturing a Semiconductor Device with Trench Gate by...

Semiconductor Device Comprising a Field Electrode

Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts

Semiconductor Device Including a Contact Structure Directly Adjoini...