David Pritchard

Person

Glenville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Device structures for a high-voltage semiconductor device
- Patent number 12,364,000
- Issue date Jul 15, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
Information Patent Grant
Planar transistor device comprising at least one layer of a two-dim...
- Patent number 12,356,675
- Issue date Jul 8, 2025
- GLOBALFOUNDRIES U.S. Inc.
- David Pritchard
Information Patent Grant
Motion-sensitive field effect transistor, motion detection system,...
- Patent number 11,913,971
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Romain H. A. Feuillette
- G01 - MEASURING TESTING
Information Patent Grant
Public-private encryption key generation using Pcell parameter valu...
- Patent number 11,722,298
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. INC.
- Romain H. A. Feuillette
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Well tap for an integrated circuit product and methods of forming s...
- Patent number 11,610,843
- Issue date Mar 21, 2023
- GLOBALFOUNDRIES U.S. INC.
- Hongru Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar transistor device comprising at least one layer of a two-dim...
- Patent number 11,581,430
- Issue date Feb 14, 2023
- GLOBALFOUNDRIES U.S. INC.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC product comprising a single active fin FinFET device and an elec...
- Patent number 11,276,651
- Issue date Mar 15, 2022
- GLOBALFOUNDRIES U.S. INC.
- Anton Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted devices with slots in active regions
- Patent number 11,239,087
- Issue date Feb 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Heng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor incorporating an array of optically switchable magneti...
- Patent number 11,226,231
- Issue date Jan 18, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Akhilesh R. Jaiswal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor device comprising a two-dimensional (2D) materi...
- Patent number 11,177,182
- Issue date Nov 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Heng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor device with source/drain regions comprising a t...
- Patent number 11,094,791
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Heng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy gate isolation and method of production thereof
- Patent number 10,727,108
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layouts for connecting contacts with metal tabs or vias
- Patent number 10,691,862
- Issue date Jun 23, 2020
- GLOBALFOUNDRIES Inc.
- Neha Nayyar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Technique for decoupling plasma antennae from actual circuitry
- Patent number 10,651,136
- Issue date May 12, 2020
- GLOBALFOUNDRIES Inc.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Auxiliary gate antenna diodes
- Patent number 10,529,704
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Inc.
- Salvatore Cimino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with slotted active regions
- Patent number 10,497,576
- Issue date Dec 3, 2019
- GLOBALFOUNDRIES Inc.
- Heng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI semiconductor device with contact enhancement layer and metho...
- Patent number 10,347,543
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for forming cross coupled contacts
- Patent number 10,262,941
- Issue date Apr 16, 2019
- GLOBALFOUNDRIES Inc.
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted silicon-on-insulator (FDSOI) transistor device and s...
- Patent number 10,186,524
- Issue date Jan 22, 2019
- GLOBALFOUNDRIES Inc.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified gate to source/drain region connections
- Patent number 10,181,522
- Issue date Jan 15, 2019
- GLOBALFOUNDRIES Inc.
- Tuhin Guha Neogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus, and system for using a cover mask for enabling m...
- Patent number 10,068,806
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- David C. Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus, and system for using a cover mask for enabling m...
- Patent number 9,947,590
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- David C. Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted silicon-on-insulator (FDSOI) transistor device and s...
- Patent number 9,941,301
- Issue date Apr 10, 2018
- GLOBALFOUNDRIES Inc.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pass-through contact using silicide
- Patent number 9,666,488
- Issue date May 30, 2017
- GLOBALFOUNDRIES Inc.
- Tuhin Guha Neogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cross-coupling line segments on a wafer
- Patent number 9,472,455
- Issue date Oct 18, 2016
- GLOBALFOUNDRIES Inc.
- Jason E. Stephens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-polygon constraint decomposition techniques for use in double...
- Patent number 9,465,907
- Issue date Oct 11, 2016
- GLOBALFOUNDRIES Inc.
- Ahmed Hassan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of modifying masking reticles to remove forbidden pitch reg...
- Patent number 9,436,081
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Jason Eugene Stephens
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Forming cross-coupled line segments
- Patent number 9,224,617
- Issue date Dec 29, 2015
- GLOBALFOUNDRIES Inc.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE WITH TWO WORK FUNCTION METALS OVER CONDUCTIVE BRIDGE, AND...
- Publication number 20250241062
- Publication date Jul 24, 2025
- GLOBALFOUNDRIES U.S. Inc.
- David C. Pritchard
Information Patent Application
NANOSHEET DEVICES WITH REDUCED WIDTH INNER SPACER AND METHOD
- Publication number 20250203937
- Publication date Jun 19, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Maria Toledano Luque
Information Patent Application
REAL-TIME PROCESS MARGIN-BASED LAYOUT OPTIMIZATION
- Publication number 20250173495
- Publication date May 29, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Collin TRANTER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BURIED INTERCONNECT TRAVERSING TRENCH ISOLATION
- Publication number 20250140692
- Publication date May 1, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Kiril B. Borisov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH GATE OVER NON-ALIGNED SEMICONDUCTOR REGIONS
- Publication number 20250079343
- Publication date Mar 6, 2025
- GLOBALFOUNDRIES U.S. Inc.
- David Charles Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...
- Publication number 20250040237
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vitor A. Vulcano Rossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
- Publication number 20250040167
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...
- Publication number 20250031439
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET STRUCTURES WITH TUNABLE CHANNELS AND INNER SIDEWALL SPACERS
- Publication number 20240387668
- Publication date Nov 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN FIN-TYPE FIELD EFFECT TRANSISTOR WITH FINE-TUNED EFFECTIV...
- Publication number 20240347638
- Publication date Oct 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTENNA STRUCTURE
- Publication number 20240304616
- Publication date Sep 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Xuelian ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STANDARD CELL AND IC STRUCTURE WITH TRENCH ISOLATION THROUGH ACTIVE...
- Publication number 20240274603
- Publication date Aug 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- David Charles Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL CAPACITORS OF SEMICONDUCTOR DEVICES
- Publication number 20240234448
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- DAVID PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR ARRAYS
- Publication number 20240170560
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OVER CORNER SEGMENT OF SEMICONDUCTOR REGION
- Publication number 20240170575
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Kiril Biserov Borisov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED DOUBLE PATTERNING WITH MANDREL MANIPULATION
- Publication number 20240162090
- Publication date May 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- James Mazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20240120373
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- HONG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...
- Publication number 20240063225
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- DAVID PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR TRANSISTOR DEVICE COMPRISING AT LEAST ONE LAYER OF A TWO-DIM...
- Publication number 20230147981
- Publication date May 11, 2023
- GLOBALFOUNDRIES U.S. Inc.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH SPACER SIZED FOR GATE CONTACT AND...
- Publication number 20230131403
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- David C. Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WELL TAP FOR AN INTEGRATED CIRCUIT PRODUCT AND METHODS OF FORMING S...
- Publication number 20220285274
- Publication date Sep 8, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Hongru Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOTION-SENSITIVE FIELD EFFECT TRANSISTOR, MOTION DETECTION SYSTEM,...
- Publication number 20220268805
- Publication date Aug 25, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Romain H.A. Feuillette
- G01 - MEASURING TESTING
Information Patent Application
PUBLIC-PRIVATE ENCRYPTION KEY GENERATION USING PCELL PARAMETER VALU...
- Publication number 20220085994
- Publication date Mar 17, 2022
- GLOBALFOUNDRIES INC.
- Romain H. A. Feuillette
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
IMAGE SENSOR INCORPORATING AN ARRAY OF OPTICALLY SWITCHABLE MAGNETI...
- Publication number 20210404867
- Publication date Dec 30, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Akhilesh R. Jaiswal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC PRODUCT COMPRISING A SINGLE ACTIVE FIN FINFET DEVICE AND AN ELEC...
- Publication number 20210358865
- Publication date Nov 18, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Anton Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR DEVICE COMPRISING A TWO-DIMENSIONAL (2D) MATERI...
- Publication number 20210242094
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Heng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR DEVICE WITH SOURCE/DRAIN REGIONS COMPRISING A T...
- Publication number 20210242316
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Heng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR TRANSISTOR DEVICE COMPRISING AT LEAST ONE LAYER OF A TWO-DIM...
- Publication number 20210057558
- Publication date Feb 25, 2021
- GLOBALFOUNDRIES INC.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY GATE ISOLATION AND METHOD OF PRODUCTION THEREOF
- Publication number 20200127013
- Publication date Apr 23, 2020
- GLOBALFOUNDRIES INC.
- David PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH SLOTTED ACTIVE REGIONS
- Publication number 20200058515
- Publication date Feb 20, 2020
- GLOBALFOUNDRIES INC.
- Heng YANG
- H01 - BASIC ELECTRIC ELEMENTS

David Pritchard

Person

Patents Grantslast 30 patents

Device structures for a high-voltage semiconductor device

Planar transistor device comprising at least one layer of a two-dim...

Motion-sensitive field effect transistor, motion detection system,...

Public-private encryption key generation using Pcell parameter valu...

Well tap for an integrated circuit product and methods of forming s...

Planar transistor device comprising at least one layer of a two-dim...

IC product comprising a single active fin FinFET device and an elec...

Fully depleted devices with slots in active regions

Image sensor incorporating an array of optically switchable magneti...

Vertical transistor device comprising a two-dimensional (2D) materi...

Vertical transistor device with source/drain regions comprising a t...

Dummy gate isolation and method of production thereof

Layouts for connecting contacts with metal tabs or vias

Technique for decoupling plasma antennae from actual circuitry

Auxiliary gate antenna diodes

Devices with slotted active regions

FDSOI semiconductor device with contact enhancement layer and metho...

Devices and methods for forming cross coupled contacts

Fully depleted silicon-on-insulator (FDSOI) transistor device and s...

Simplified gate to source/drain region connections

Method, apparatus, and system for using a cover mask for enabling m...

Method, apparatus, and system for using a cover mask for enabling m...

Fully depleted silicon-on-insulator (FDSOI) transistor device and s...

Pass-through contact using silicide

Methods of cross-coupling line segments on a wafer

Multi-polygon constraint decomposition techniques for use in double...

Methods of modifying masking reticles to remove forbidden pitch reg...

Forming cross-coupled line segments

Patents Applicationslast 30 patents

STRUCTURE WITH TWO WORK FUNCTION METALS OVER CONDUCTIVE BRIDGE, AND...

NANOSHEET DEVICES WITH REDUCED WIDTH INNER SPACER AND METHOD

REAL-TIME PROCESS MARGIN-BASED LAYOUT OPTIMIZATION

BURIED INTERCONNECT TRAVERSING TRENCH ISOLATION

STRUCTURE WITH GATE OVER NON-ALIGNED SEMICONDUCTOR REGIONS

INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...

NANOSHEET STRUCTURES WITH TUNABLE CHANNELS AND INNER SIDEWALL SPACERS

MULTI-FIN FIN-TYPE FIELD EFFECT TRANSISTOR WITH FINE-TUNED EFFECTIV...

ANTENNA STRUCTURE

STANDARD CELL AND IC STRUCTURE WITH TRENCH ISOLATION THROUGH ACTIVE...

LATERAL CAPACITORS OF SEMICONDUCTOR DEVICES

BIPOLAR JUNCTION TRANSISTOR ARRAYS

GATE STRUCTURE OVER CORNER SEGMENT OF SEMICONDUCTOR REGION

SELF-ALIGNED DOUBLE PATTERNING WITH MANDREL MANIPULATION

ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES

SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...

PLANAR TRANSISTOR DEVICE COMPRISING AT LEAST ONE LAYER OF A TWO-DIM...

INTEGRATED CIRCUIT STRUCTURE WITH SPACER SIZED FOR GATE CONTACT AND...

WELL TAP FOR AN INTEGRATED CIRCUIT PRODUCT AND METHODS OF FORMING S...

MOTION-SENSITIVE FIELD EFFECT TRANSISTOR, MOTION DETECTION SYSTEM,...

PUBLIC-PRIVATE ENCRYPTION KEY GENERATION USING PCELL PARAMETER VALU...

IMAGE SENSOR INCORPORATING AN ARRAY OF OPTICALLY SWITCHABLE MAGNETI...

IC PRODUCT COMPRISING A SINGLE ACTIVE FIN FINFET DEVICE AND AN ELEC...

VERTICAL TRANSISTOR DEVICE COMPRISING A TWO-DIMENSIONAL (2D) MATERI...

VERTICAL TRANSISTOR DEVICE WITH SOURCE/DRAIN REGIONS COMPRISING A T...

PLANAR TRANSISTOR DEVICE COMPRISING AT LEAST ONE LAYER OF A TWO-DIM...

DUMMY GATE ISOLATION AND METHOD OF PRODUCTION THEREOF

DEVICES WITH SLOTTED ACTIVE REGIONS