David Rhodes

Person

Goleta, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Module configurations for integrated III-nitride devices
- Patent number 12,074,150
- Issue date Aug 27, 2024
- Transphorm Technology, Inc.
- David Michael Rhodes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Module configurations for integrated III-Nitride devices
- Patent number 11,749,656
- Issue date Sep 5, 2023
- Transphorm Technology, Inc.
- David Michael Rhodes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride devices having an Al1-xSixO gate insul...
- Patent number 11,322,599
- Issue date May 3, 2022
- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 11,121,216
- Issue date Sep 14, 2021
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 10,629,681
- Issue date Apr 21, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conditions for burn-in of high power semiconductors
- Patent number 10,319,648
- Issue date Jun 11, 2019
- Transphorm Inc.
- Kurt Vernon Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 10,224,401
- Issue date Mar 5, 2019
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES
- Publication number 20230335464
- Publication date Oct 19, 2023
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULE CONFIGURATIONS FOR INTEGRATED III-NITRIDE DEVICES
- Publication number 20230307429
- Publication date Sep 28, 2023
- Transphorm Technology, Inc.
- David Michael Rhodes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULE CONFIGURATIONS FOR INTEGRATED III-NITRIDE DEVICES
- Publication number 20210391311
- Publication date Dec 16, 2021
- Transphorm Technology, Inc.
- David Michael Rhodes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSUL...
- Publication number 20210043750
- Publication date Feb 11, 2021
- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
- Publication number 20200212180
- Publication date Jul 2, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
- Publication number 20190198615
- Publication date Jun 27, 2019
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDITIONS FOR BURN-IN OF HIGH POWER SEMICONDUCTORS
- Publication number 20180301386
- Publication date Oct 18, 2018
- TRANSPHORM INC.
- Kurt Vernon Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
- Publication number 20180158909
- Publication date Jun 7, 2018
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS

David Rhodes

Person

Patents Grantslast 30 patents

Module configurations for integrated III-nitride devices

Module configurations for integrated III-Nitride devices

Enhancement mode III-nitride devices having an Al1-xSixO gate insul...

III-nitride devices including a graded depleting layer

III-nitride devices including a graded depleting layer

Conditions for burn-in of high power semiconductors

III-nitride devices including a graded depleting layer

Patents Applicationslast 30 patents

III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES

MODULE CONFIGURATIONS FOR INTEGRATED III-NITRIDE DEVICES

MODULE CONFIGURATIONS FOR INTEGRATED III-NITRIDE DEVICES

ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSUL...

III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER

III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER

CONDITIONS FOR BURN-IN OF HIGH POWER SEMICONDUCTORS

III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER