Patent Grant
10629681
This specification relates to semiconductor devices, in particular III-Nitride transistors.
Currently, typical power semiconductor devices, including devices such as high-voltage P-I-N diodes, power MOSFETs and insulated gate bipolar transistors (IGBTs), are fabricated with silicon (Si) semiconductor material. More recently, silicon carbide (SiC) power devices have been considered due to their superior properties. III-Nitride or III-N semiconductor devices, such as gallium nitride (GaN) devices, are now emerging as attractive candidates to carry large currents, support high voltages and to provide very low on-resistance and fast switching times. Although high voltage III-N diodes, transistors and switches are beginning to be commercialized, further improvements are needed in order to improve the efficiency and output characteristics of the devices. The term device will be used in general for any transistor or switch or diode when there is no need to distinguish between them.
Described herein are III-Nitride transistors and other devices having a source-connected field plate contacting a graded III-N layer that is between the gate and drain of the transistor and is electrically isolated from (i.e., not electrically connected to) the drain. The device structures can be configured to have very high breakdown voltages while maintaining a small separation between the gate and the drain. The details of one or more embodiments of the subject matter described in this specification are set forth in the accompanying drawings and the description below. Other features, aspects, and advantages of the subject matter will become apparent from the description, the drawings, and the claims.
In a first aspect, a III-N device is described. The III-N devices comprises a III-N layer structure comprising a III-N channel layer, a III-N barrier layer over the III-N channel layer, and a graded III-N layer over the III-N barrier layer, the graded III-N layer having a first side adjacent to the III-N barrier layer and a second side opposite the first side. The III-N device further comprises a first power electrode and a second power electrode and a gate between the first power electrode and the second power electrode, the gate being over the III-N layer structure. A composition of the graded III-N layer is graded such that the bandgap of the graded III-N layer adjacent to the first side is greater than the bandgap of the graded III-N layer adjacent to the second side. The graded III-N layer further includes a region that is between the gate and the second power electrode, and is electrically connected to the first power electrode and electrically isolated from the second power electrode.
In a second aspect, a transistor is described. The transistor comprises a III-N layer structure comprising a III-N channel layer, a III-N barrier layer over the III-N channel layer, a first graded III-N layer over the III-N barrier layer, and a second graded III-N layer over the first graded III-N layer, the second graded III-N layer being thinner than the first graded III-N layer. The transistor further comprises a source electrode and a drain electrode and a gate between the source electrode and the drain electrode, the gate being over the III-N layer structure. The first graded III-N layer has a first side adjacent to the III-N barrier layer and a second side opposite the first side, and the second graded III-N layer has a third side adjacent to the first graded III-N layer and a fourth side opposite the third side. The composition of the first graded layer is graded at a first average rate from the first side to the second side such that the bandgap of the first graded III-N layer at the first side is greater than the bandgap of the first graded III-N layer at the second side. The composition of the second graded III-N layer is graded at a second average rate from the third side to the fourth side such that the bandgap of the second graded III-N layer at the third side is greater than the bandgap of the second graded III-N layer at the fourth side, and the second average rate is greater than the first average rate.
In a third aspect, another III-N device is described. The III-N device comprises a III-N layer structure comprising a III-N barrier layer adjacent to a III-N channel layer, where a compositional difference between the III-N channel layer and the III-N barrier layer causes a 2DEG channel to be induced in the III-N channel layer. The III-N device further comprises a first power electrode and a second power electrode where the first and second power electrodes are electrically connected to the 2DEG channel. The III-N device comprises a gate electrode over the III-N channel layer and between the first power electrode and the second power electrode. The III-N device further comprises a graded III-N layer over the III-N layer structure and between the gate electrode and the second power electrode, the graded III-N layer having a first side adjacent to the III-N layer structure and a second side opposite the first side. The III-N device also comprises a p-doped III-N layer over the graded III-N layer, the p-doped layer having a third side contacting the second side of the graded III-N layer and a fourth side opposite the third side, where a composition of the graded III-N layer is graded such that the bandgap of the graded III-N layer adjacent to the first side is greater than the bandgap of the graded III-N layer adjacent the second side, and an area of the third side of the p-doped III-N layer is less than an area of the second side of the graded III-N layer.
In a fourth aspect, a transistor is described. The transistor comprises a III-N layer structure comprising a III-N channel layer between a III-N barrier layer and a graded III-N layer. The transistor further comprises a source and a drain, and a gate between the source and the drain, the gate being over the III-N layer structure. The transistor further comprises a channel in the III-N channel layer, the channel extending from the source to the drain when the gate is biased relative to the source at a voltage which is higher than a threshold voltage of the transistor, where the graded III-N layer is electrically connected to the source and electrically isolated from the drain.
In a fifth aspect, a transistor is described. The transistor comprises a III-N layer structure comprising a III-N channel layer and a III-N barrier layer. The transistor further comprises a 2DEG channel in the III-N channel layer. The transistor further comprises a source and a drain and a gate between the source and the drain, the gate being over the III-N layer structure. The transistor further comprises a graded III-N layer which is at least partially in an access region between the gate and the drain, where a grading profile of the graded III-N layer causes holes to be induced in at least a portion of the graded III-N layer without p-type dopants being included in the portion of the graded III-N layer. The grading profile of the graded III-N layer is configured such that mobile charge in the 2DEG channel in the access region between the gate and the drain is depleted while the gate is biased relative to the source at a voltage lower than a transistor threshold voltage and the drain is biased above a minimum voltage relative to the source, but not depleted while the gate is biased relative to the source at a voltage lower than the transistor threshold voltage and the drain is biased below the minimum voltage relative to the source.
In a sixth aspect, a III-N device is described. The III-N device comprises a II-N layer structure comprising a III-N barrier layer adjacent to a III-N channel layer, where a compositional difference between the III-N channel layer and the III-N barrier layer causes a 2DEG channel to be induced in the III-N channel layer. The III-N device further comprises a source electrode and a drain electrode, where the source electrode and the drain electrode are electrically connected to the 2DEG channel. The III-N device further comprises a graded III-N layer over the III-N layer structure, the graded III-N layer having a first side adjacent to the III-N layer structure and a second side opposite the first side. The III-N device further comprises a p-doped III-N layer over the graded III-N layer, the p-doped III-N layer having a third side contacting the second side of the graded III-N layer and a fourth side opposite the third side. The III-N device further comprises a gate electrode over the p-doped III-N layer and between the source electrode and the drain electrode, where a composition of the graded III-N layer is graded such that the bandgap of the graded III-N layer adjacent to the first side is greater than the bandgap of the graded III-N layer adjacent to the second side. The area of the third side of the p-doped III-N layer is less than an area of the second side of the graded III-N layer, and the graded III-N layer is electrically isolated from the source electrode and the drain electrode.
In a seventh aspect, a III-N device is described. The III-N device comprises a substrate and a III-N layer structure over the substrate. The III-N layer structure comprises a III-N channel layer, a III-N barrier layer over the III-N channel layer, and a graded III-N layer over the barrier layer, the graded III-N layer having a first side adjacent to the III-N barrier layer and a second side opposite the first side. The III-N device further comprises a 2DEG channel in the III-N channel layer and a first power electrode and a second power electrode. The composition of the graded III-N layer is graded such that the bandgap of the graded III-N layer adjacent to the first side is greater than the bandgap of the graded III-N layer adjacent to the second side, and the graded III-N layer is electrically isolated from the first power electrode. The grading profile of the graded III-N layer is configured such that mobile charge in the 2DEG channel under the graded III-N layer is depleted when the first power electrode is biased above a minimum voltage relative to the second power electrode, but not depleted when the first electrode is biased below a minimum voltage relative to the second power electrode.
In an eight aspect, a III-N device encased in a package is described. The III-N devices comprises a III-N layer structure over a substrate, the III-N layer structure comprising a III-N channel layer, a III-N barrier layer over the III-N channel layer, a graded III-N layer over the III-N barrier layer, and a p-doped III-N layer over the III-N graded layer. The III-N device further comprises a first power electrode and a second power electrode, where the first power electrode is at least partially in a via formed through the III-N layer structure, and at least a portion of the second power electrode is formed in a recess in the III-N layer structure. The first power electrode is electrically isolated from both the graded III-N layer and the p-doped III-N layer, the first power electrode is electrically connected both to a 2DEG in the III-N channel layer and to the substrate. The package comprises a first lead and a second lead, the first lead is electrically connected to a conductive structural base and the second lead is electrically isolated from the conductive structural package base, the substrate of the III-N device is electrically connected to the conductive structural package base and the second power electrode of the III-N device is electrically connected to the second lead of the package.
Each of the devices, and transistors described herein can include one or more of the following features. When the gate is biased relative to the source electrode at a voltage less than the threshold voltage and the drain electrode is biased relative to the source electrode at a positive voltage that is greater than the minimum voltage, the 2DEG is depleted of mobile charge in the device access region between the gate and the drain electrode. Where the minimum voltage of the device is greater than 5V. Where the minimum voltage is in a range of 5V to 100V. The grading profile of the graded III-N layer is configured such that a polarization charge density in the graded III-N layer is in the range of 10-100% of an areal sheet charge density of mobile charge in the 2DEG channel. The device comprises a recess extending through the graded III-N layer, where the gate is in the recess. The device comprise a field plate which is connected to the first power electrode and directly contacts a surface of the graded III-N layer that is between the gate and the second power electrode. The graded III-N layer comprises a first graded III-N layer adjacent to the first side and a second graded layer adjacent to the second side, where the first graded III-N layer is thicker than the second graded III-N layer. The device comprises a first graded II-N layer that is graded at a first rate and a second graded layer is graded at a second rate, where the second rate is greater than the first rate. The device comprises a p-doped layer where the p-doped layer and the graded layer are electrically isolated form the second power electrode. Where a separation between the second power electrode and the second edge of the p-doped III-N layer is greater than a separation between the second power electrode and the second edge of the graded III-N layer. Where the separation between the graded III-N layer and the drain electrode is greater than 1 μm and less than 7 μm. Where the contact between the second power electrode and the III-N channel layer is a Schottky contact. The device is capable of supporting a voltage of 600V or greater between the first power electrode and the second power electrode, and a separation between the first power electrode and the second power electrode is less than 15 μm. The III-N layer structure of the device comprises a III-N back barrier layer having a first side adjacent the substrate and a second side adjacent the III-N channel layer, where the second side is less than 100 nm from the 2DEG channel.
As used herein, the terms III-Nitride or III-N materials, layers, devices, etc., refer to a material or device comprised of a compound semiconductor material according to the stoichiometric formula BwAlxInyGazN, where w+x+y+z is about 1 with 0≤w≤1, 0≤x≤1, 0 23 y≤1, and 0≤z≤1. III-N materials, layers, or devices, can be formed or prepared by either directly growing on a suitable substrate (e.g., by metal organic chemical vapor deposition), or growing on a suitable substrate, detaching from the original substrate, and bonding to other substrates.
As used herein, two or more contacts or other items such as conductive channels or components are said to be “electrically connected” if they are connected by a material which is sufficiently conducting to ensure that the electric potential at each of the contacts or other items is intended to be the same, e.g., is about the same, at all times under any bias conditions.
As used herein, “blocking a voltage” refers to the ability of a transistor, device, or component to prevent significant current, such as current that is greater than 0.001 times the operating current during regular conduction, from flowing through the transistor, device, or component when a voltage is applied across the transistor, device, or component. In other words, while a transistor, device, or component is blocking a voltage that is applied across it, the total current passing through the transistor, device, or component will not be greater than 0.001 times the operating current during regular conduction. Devices with off-state currents which are larger than this value exhibit high loss and low efficiency, and are typically not suitable for many applications, especially power switching applications.
As used herein, a “high-voltage device”, e.g., a high-voltage switching transistor, HEMT, bidirectional switch, or four-quadrant switch (FQS), is an electronic device which is optimized for high-voltage applications. That is, when the device is off, it is capable of blocking high voltages, such as about 300V or higher, about 600V or higher, or about 1200V or higher, and when the device is on, it has a sufficiently low on-resistance (RON) for the application in which it is used, e.g., it experiences sufficiently low conduction loss when a substantial current passes through the device. A high-voltage device can at least be capable of blocking a voltage equal to the high-voltage supply or the maximum voltage in the circuit for which it is used. A high-voltage device may be capable of blocking 300V, 600V, 1200V, 1700V, 2500V, or other suitable blocking voltage required by the application. In other words, a high-voltage device can block all voltages between 0V and at least Vmax, where Vmax is the maximum voltage that can be supplied by the circuit or power supply, and Vmax can for example be 300V, 600V, 1200V, 1700V, 2500V, or other suitable blocking voltage required by the application. For a bidirectional or four quadrant switch, the blocked voltage could be of any polarity less a certain maximum when the switch is OFF (±Vmax such as ±300V or ±600V, ±1200V and so on), and the current can be in either direction when the switch is ON.
As used herein, a “III-N device” is a device based on III-N heterostructures. The III-N device can be designed to operate as a transistor or switch in which the state of the device is controlled by a gate terminal or as a two terminal device that blocks current flow in one direction and conducts in another direction without a gate terminal. The III-N device can be a high-voltage device suitable for high voltage applications. In such a high-voltage device, when the device is biased off (e.g., the voltage on the gate relative to the source is less than the device threshold voltage), it is at least capable of supporting all source-drain voltages less than or equal to the high-voltage in the application in which the device is used, which for example may be 100V, 300V, 600V, 1200V, 1700V, 2500V, or higher. When the high voltage device is biased on (e.g., the voltage on the gate relative to the source or associated power terminal is greater than the device threshold voltage), it is able to conduct substantial current with a low on-voltage (i.e., a low voltage between the source and drain terminals or between opposite power terminals). The maximum allowable on-voltage is the maximum on-state voltage that can be sustained in the application in which the device is used.
The details of one or more disclosed implementations of the subject matter described in this specification are set forth in the accompanying drawings and the description below. Additional features and variations may be included in the implementations as well. Other features, aspects, and advantages will become apparent from the description, the drawings and the claims.
Like reference symbols in the various drawings indicate like elements.
Described herein are III-Nitride transistors and other devices that include a graded III-Nitride layer as a channel depleting layer. Specifically, the graded layer causes channel charge in an access region of the device to be depleted while the device is biased OFF, but not to be depleted while the device is biased ON. Such a structure allows for a compact device with a very high breakdown voltage while maintaining a low on-resistance.
Referring now to
A graded III-N layer 20 is formed over the III-N barrier layer 12. The graded III-N layer 20 is at least between the gate 88 and the drain 75, and may optionally also be between the source 74 and the gate 88, as shown in
The III-N layers 11, 12, and 20 can all be formed in a polar or semipolar orientation, for example a [0 0 0 1 ] or III-polar orientation (where the group-III face of the layer is opposite the substrate). The compositional grade in the graded III-N layer 20 causes the graded layer 20 to have a fixed negative polarization charge throughout the bulk of the layer. Specifically, because the graded III-N layer is formed from a polar material in a polar orientation (e.g., a [0 0 0 1 ] orientation), compositionally grading the layer as described above causes a net negative polarization charge to exist in the bulk of the layer. These negative bulk polarization charges are virtually similar to charge due to ionized acceptors, and thus the graded layer 20 will be electrically neutral if it can attract holes at a concentration equal to the concentration of bulk polarization charge throughout the layer 20. The concentration of bulk polarization charge depends on the rate at which the material is graded; a higher rate of grading results in a higher concentration of polarization charge.
The specific grading structure and thickness of the graded III-N layer 20 is selected such that channel charge in the drain side access region 83 of the transistor is substantially depleted while the transistor is biased OFF (i.e., while the gate of the transistor is biased relative to the source at a voltage lower than the transistor threshold voltage), but not depleted (i.e., is substantially electrically conductive) while the transistor is biased ON (i.e., while the gate of the transistor is biased relative to the source at a voltage higher than the transistor threshold voltage). For example, the areal polarization charge density in the graded III-N layer 20 can be in the range of 10-100% (e.g., 50-75%) of the areal sheet charge density of the electrons in the 2DEG channel 19.
An insulator layer 22 is formed over the graded III-N layer. The insulator layer 22 can, for example, be formed of an oxide or nitride such as silicon nitride, silicon oxide, aluminum nitride, aluminum oxide, or any other insulator with a large enough breakdown field. The insulator layer 22 can serve as a passivation layer, preventing voltage fluctuations at the upper surface of the III-N layers during device operation, thereby improving the stability of the device.
A gate 88 is formed in a recess that extends through insulator layer 22. The recess optionally extends at least partially through graded III-N layer 20, through the entire thickness of graded III-N layer 20, or through the entire thickness of graded III-N layer 20 and at least partially through III-N barrier layer 12 (and optionally through the entire thickness of III-N barrier layer 12). The recess may further optionally extend into the III-N channel layer 11, as shown in
As seen in
Alternatively, the device in
An insulating high-voltage passivation electrode-defining layer 33, which can for example be formed of an oxide or nitride, is formed over insulator layer 22. Recess 17, in which a source connected field plate 79 is formed, extends through the thickness of layers 33 and 22 to expose a surface of graded layer 20, the exposed surface being in the access region 83 between the gate 88 and the drain 75. Recess 17 can include a sloped and/or stepped region over which portion 99 of field plate 79 (described below) is formed.
As further illustrated in
Having a source-connected field plate 79 electrically connected to the graded III-N layer 20 can cause layer 20 to have an excess concentration of holes, and thereby behave similarly to a p-type layer, while the transistor is biased in the ON state or is not under any bias (i.e., such as when the source, gate, and drain are not biased relative to one another). That is, the source-connected field plate 79 can supply holes to the graded III-N layer 20, and the holes can be distributed throughout the layer 20 in such a way that the layer 20 (or at least a portion of the layer 20) is charge neutral or has a lower net negative charge than it would have in the absence of the holes. In some implementations, the graded III-N layer 20 is also doped with p-type dopants.
The device of
When the gate 88 is biased relative to the source 74 at a voltage that is lower than the threshold voltage of the device, there is no 2DEG in the gate region 81 below the gate 88, and therefore the 2DEG 19 is discontinuous between the source 74 and the drain 75. While no voltage (or a small positive voltage) is applied to the drain, the graded III-N layer 20 remains populated with holes that were supplied by the source-connected field plate 79. When a small positive voltage is applied to the drain 75, the portion of the 2DEG in the access region 83 between the gate 88 and the drain 75 attains substantially the same potential (i.e., substantially the same voltage) as the drain 75. The graded III-N layer 20 and the source connected field plate 79 remain at substantially the same potential as the source 74. As the voltage on the drain 75 is progressively increased, a positive electric field is created from the portion of the 2DEG in the drain-side access region that is directly beneath the graded III-N layer 20 up to the graded III-N layer 20. This causes electrons from the portion of the 2DEG 19 in the drain-side access region 83 to deplete out, and the graded III-N layer 20 is also progressively depleted of holes.
The grading profile in the graded III-N layer 20, the layer thicknesses and compositions of the III-N layers, and the corresponding (undepleted) 2DEG sheet charge density in the channel can all be selected such that, at all voltages greater than a minimum drain voltage, where the minimum drain voltage can for example be in a range of 5V and 100V, almost all or substantially all mobile carriers in the 2DEG in the drain-side access region and in the graded III-N layer 20 are depleted (mobile carriers in the 2DEG include conduction electrons, and mobile carriers in the graded III-N layer 20 include holes). Any subsequent increase in drain voltage causes charge imaging from regions in or near the drain 75 to the field plate 79 (e.g., portion 99 of the field plate). Because the graded III-N layer 20 is fully depleted, it no longer remains at ground potential, and as a result the potential (i.e., voltage) in the layer increases from the gate side to the drain side (because the layer is no longer equipotential, different parts of the layer will be at different electric potentials). There is therefore a smooth change of potential from the drain 75 to the field plate 79, and field peaking, which is commonly observed in conventional planar HEMTs, is mitigated at the edge of the field plate. This results in a more uniform electric field and thus a larger average field before breakdown occurs, thereby resulting in a larger breakdown voltage.
Furthermore, the peak electric field in the device of
In order to allow for a compact device with high breakdown voltage, as described above, portion 78 of field plate 79 is formed closer to the gate 88 than to the drain. For example, the separation between portion 89 of gate 88 and portion 78 of field plate 79 can be less than 2 μm, and the width of portion 78 of field plate 79 can be in the range of 1 to 2 μm.
In some implementations, graded layer 20 is formed as a combination of multiple layers, e.g., multiple graded layers (provided the compositional grading throughout the entire graded layer is as described above). For example,
In some other implementations, holes are supplied to graded III-N layer 20 via a p-type layer.
A method of forming the device of
Referring to
As shown in
Next, as seen in
Source and drain contacts 74 and 75, respectively, can be formed in a number of ways. For example, a metal or combination of metals can be deposited, for example by evaporation, sputtering, or CVD, in ohmic contact regions 85 and 86 (regions 85 and 86 are labeled in
Next, as seen in
Referring to
Next, as illustrated in
The graded III-N layer 704 has a composition that is graded, for example continuously graded, from the side adjacent the substrate 700 to the side opposite the substrate 700 (i.e., from the side opposite the channel layer 706 to the side adjacent the channel layer 706). The composition of the graded III-N layer 704 is selected such that the bandgap of the graded III-N layer 704 decreases (e.g., continuously decreases) from the side adjacent the substrate 700 to the side opposite the substrate 700, and/or the lattice constant of the graded III-N layer 704 increases (e.g., continuously increases) from the side adjacent the substrate 700 to the side opposite the substrate 700. For example, the graded III-N layer 704 can be formed of AlyGa1−yN (0≤y≤1), where y decreases (e.g., continuously decreases) from the side adjacent the substrate 700 to the side opposite the substrate 700. Alternatively, the graded III-N layer 704 can be formed of InzGa1−zN (0≤z≤1), where z increases (e.g., continuously increases) from the side adjacent the substrate 700 to the side opposite the substrate 700.
The III-N layers 702, 704, 706, and 708 can all be formed in a polar or semipolar orientation, for example a [0 0 0 1 ] or III-polar orientation (where the group-III face of the layer is opposite the substrate). The compositional grade in the graded III-N layer 704 causes the graded layer 704 to have a fixed negative polarization charge throughout the bulk of the layer. Specifically, because graded III-N layer is formed from a polar material in a polar orientation (e.g., a [0 0 0 1 ] orientation), compositionally grading the layer as described above causes a net negative polarization charge to exist in the bulk of the layer. These negative bulk polarization charges are electrically similar to ionized acceptors, and thus the graded layer 704 will be electrically neutral if it can attract holes at a concentration equal to the concentration of bulk polarization charge throughout the layer 704. The concentration of bulk polarization charge depends on the rate at which the material is graded; a higher rate of grading results in a higher concentration of polarization charge.
The specific grading structure and thickness of the graded III-N layer 704 is selected such that the 2DEG channel 716 in the device access regions is substantially populated with mobile charge while the device is biased in the ON state, but becomes depleted of charge when the device is biased in the OFF state, and a voltage greater than a minimum voltage level is applied to the drain, such that when the device is in the OFF state and blocks a sufficiently large voltage, the 2DEG in at least a portion of the device access regions is substantially depleted of mobile charge. For example, as with the device in
In some implementations, graded layer 704 is formed as a combination of multiple graded layers (provided the compositional grading throughout the entire graded layer is as described above). For example, graded III-N layer 704 can have the structure shown in
Alternatively, a p-type region can be provided which contacts graded layer 704 and provides holes to the layer. For example,
The devices of
When the gate 714 is biased relative to the source 710 at a voltage that is lower than the threshold voltage of the device, there is no 2DEG in the gate region below the gate 714, and therefore the 2DEG is discontinuous between the source 710 and the drain 712. When a small positive voltage is applied to the drain 712 relative to the source, the portion of the 2DEG in the access region between the gate 714 and the drain 712 attains the same potential (i.e., the same voltage) as the drain 712. The graded layer 704 remains at substantially the same potential as the source 710, since the source 710 and the graded layer 704 are electrically connected as shown. As the voltage on the drain 712 is progressively increased, a positive electric field is created from the portion of the 2DEG in the drain-side access region down to the underlying portion of the graded layer 704 in the drain-side access region. This causes electrons from the portion of the 2DEG in the drain-side access region to become depleted, and the graded layer 704 in the drain-side access region is also progressively depleted of holes. Because the portion of the 2DEG 716 that is in the source-side access region remains at approximately the same voltage as the source, it does not become depleted of mobile carriers as the drain voltage increases when the device is biased in the OFF state. Similarly, the portion of the graded layer 704 in the source-side access region does not become depleted of holes as the drain voltage increases when the device is biased in the OFF state. Thus, even though the graded III-N layer 704 extends from the source region all the way to the drain region of the device, it only serves to deplete mobile charges from the 2DEG in the drain-side access region (and not the source-side access region) as the drain voltage increases when the device is biased in the OFF state.
The grading profile in the graded III-N layer 704, the layer thicknesses and compositions of the III-N layers, and the corresponding (undepleted) 2DEG sheet charge density in the channel can all be selected such that, at all voltages greater than a minimum drain voltage, where the minimum drain voltage can for example be in a range of 5V and 100V, almost all or substantially all mobile carriers in the 2DEG in the drain-side access region and in the graded III-N layer 704 become depleted (mobile carriers in the 2DEG include conduction electrons, and mobile carriers in the graded III-N layer 704 include holes). This results in a more uniform electric field and thus a larger average field before breakdown occurs, thereby resulting in a larger breakdown voltage.
The device of
Layer 420 can have similar length as the gate 88 or partially extend from beneath the gate towards the drain 75 (not shown) depending on process alignment and tolerances used during manufacturing. In order to minimize the separation 402 between the drain 75 and the gate 88, the distance the p-doped III-N layer 420 extends towards the drain 75 can be minimized. As viewed from above (plan view of the device), the area of layer 420 is less than (e.g., substantially less than) the area of layer 20. That is, layer 420 is only over and/or only covers a portion of the upper surface of layer 20. The gate 88 may optionally include an extending portion over the insulating layer 22 (not shown) similar to extending portion 89 as shown in the device of
Referring to region 201 of
Furthermore, the peak electric field in the device of
The device of
When the gate 88 is biased relative to the source 74 at a voltage that is lower than the threshold voltage of the device, there is no 2DEG channel in the gate region below the gate 88, and therefore the 2DEG channel 19 is discontinuous between the source 74 and the drain 75. While no voltage (or a small voltage) is applied to the drain, the graded III-N layer 20 remains populated with holes that were supplied by the p-doped III-N layer 420. When a small positive voltage is applied to the drain 75, the portion of the 2DEG in the device access region between the gate 88 and the drain 75 attains substantially the same potential (i.e., substantially the same voltage) as the drain 75. The graded III-N layer 20 remains at substantially the same potential as the gate 88. As the voltage on the drain 75 is progressively increased, a positive electric field is created from the portion of the 2DEG in the drain side access region 83 that is directly beneath the graded III-N layer 20 up to the graded III-N layer 20. This causes electrons from the portion of the 2DEG in the drain-side access region to become depleted, and the graded III-N layer 20 is also progressively depleted of holes.
The grading profile in the graded III-N layer 20, the layer thicknesses and compositions of the III-N layers, and the corresponding (undepleted) 2DEG sheet charge density in the channel can all be selected such that, at all voltages greater than a minimum drain voltage, where the minimum drain voltage can for example be in a range of 20V and 100V, almost all or substantially all mobile carriers in the 2DEG in the drain-side access region 83 and in the graded III-N layer 20 deplete out (mobile carriers in the 2DEG include conduction electrons, and mobile carriers in the graded III-N layer 20 include holes). Because the graded III-N layer 20 is fully depleted, it no longer remains at the gate potential, and as a result the potential (i.e., voltage) in the layer increases (because the layer is no longer equipotential, different parts of the layer will be at different electric potentials). There is therefore a smooth change of potential from the drain 75 to the gate 88, and field peaking, which is commonly observed in conventional planar HEMTs, is mitigated at the edge of the field plate. This results in a more uniform electric field and thus a larger average field before breakdown occurs, thereby resulting in a larger breakdown voltage.
Prior to forming the second power electrode 801 in the recess, an optional p-doped barrier enhancement III-N layer 430 can be deposited conformally along the sidewalls of the recess. This barrier enhancement layer 430 can be formed between the electrode 801 and the underlying III-N layers in the recess. The barrier enhancement layer 430 can act to enhance the Schottky barrier height between power electrode 801 and the underlying layers, thereby further reducing reverse bias currents during device operation. The barrier enhancement layer 430 can be formed via a regrowth step after etching the recess in which electrode 801 is deposited. The regrowth of this III-N layer 430 after etching the recess helps to repair damage caused by the etch process and decreases current leakage paths through the Schottky contact. Reverse bias leakage current can be 10 times or greater in a device which is formed without the barrier enhancement layer. The p-doped barrier enhancement layer 430 can have characteristics such that a combination of the thickness and the p-doping density (e.g., less than 1×1018 holes/cm2) causes the layer to be fully depleted of holes under forward and reverse bias conditions, thereby allowing the device to operate as a Schottky diode. Alternatively, the p-doped barrier enhancement layer 430 can have characteristics such that the layer is not depleted of holes under forward or reverse bias conditions, and the III-N device can function as a p-n junction diode. Or, the thickness and doping density of the p-doped barrier enhancement layer 430 can be selected such that holes are present during forward bias operation, but the barrier enhancement layer is fully depleted of holes during reverse bias operation, and the device can operate like a hybrid device with both Schottky and p-n junction diode characteristics.
The device of
Furthermore, the peak electric field in the device of
The device of
As the voltage at the second power electrode 801 is increased to greater than a first threshold voltage of the device relative to the first power electrode 95, the Schottky junction between the power electrodes becomes forward bias, and the device is in the ON state. In this state, a substantial electron current flows from the first power electrode through the 2DEG channel 19 and into the second power electrode 801. As the voltage is further increased at the second power electrode 801 beyond a second threshold voltage, the p-i-n junction that exists between the p-doped layer 420 and the III-N channel layer 11 turns on and additional holes are injected into the channel 19. In order to maintain a space charge balance, additional electrons are imaged on the channel 19. The III-N back barrier layer 13 serves to confine some of the additional holes in a potential well formed at the interface of the back barrier layer 12 and the III-N channel layer 11. This adds surge protection to the device when biased beyond the p-i-n junction turn-on voltage by increasing the charge density of the channel 19.
The grading profile in the graded III-N layer 20, the layer thicknesses and compositions of the III-N layers, and the corresponding (undepleted) 2DEG sheet charge density in the channel can all be selected such that, at all voltages greater than a minimum drain voltage, where the minimum drain voltage can for example be in a range of 5V and 100V, almost all or substantially all mobile carriers in the 2DEG in the device access region 84 and in the graded III-N layer 20 deplete out (mobile carriers in the 2DEG include conduction electrons, and mobile carriers in the graded III-N layer 20 include holes). Because the graded III-N layer 20 is fully depleted, it no longer remains at the second power electrode potential, and as a result the potential (i.e., voltage) in the layer increases (because the layer is no longer equipotential, different parts of the layer will be at different electric potentials). There is therefore a smooth change of potential from the first power electrode 95 to the second power electrode 801, and field peaking, which is commonly observed in conventional planar devices is mitigated at the edge of the second power electrode. The result is a more uniform electric field and thus a larger average field before breakdown occurs, thereby allowing for a larger breakdown voltage.
A number of implementations have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the techniques and devices described herein. For example, in any of the devices described herein, the interface between the III-N channel layer and the III-N barrier layer may be non-abrupt (i.e., may be graded over some finite distance such as between 0.5 nm and 10 nm), or alternatively the III-N channel layer and the III-N barrier layer can be replaced by a single layer whose bandgap is graded in an opposite direction from that of the graded III-N layer. In either of these cases, the induced channel charge can exist over all or part of the non-abrupt (e.g., graded) region. Accordingly, other implementations are within the scope of the following claims.
This application is a divisional application of, and claims priority to, U.S. application Ser. No. 15/564,498, filed Oct. 5, 2017, which is a national stage application under § 371 and which claims priority to International Application No. PCT/US2017/035254, filed May 31, 2017, which claims the benefit under 35 U.S.C. § 119(e) of U.S. Provisional Application No. 62,343,782, filed May 31, 2016. The disclosures of the foregoing applications are incorporated herein by reference in their entirety for all purposes.
| Number | Name | Date | Kind |
|---|---|---|---|
| 4300091 | Schade, Jr. | Nov 1981 | A |
| 4532439 | Koike | Jul 1985 | A |
| 4645562 | Liao et al. | Feb 1987 | A |
| 4665508 | Chang | May 1987 | A |
| 4728826 | Einzinger et al. | Mar 1988 | A |
| 4821093 | Iafrate et al. | Apr 1989 | A |
| 4914489 | Awano | Apr 1990 | A |
| 5051618 | Lou | Sep 1991 | A |
| 5329147 | Vo et al. | Jul 1994 | A |
| 5618384 | Chan et al. | Apr 1997 | A |
| 5646069 | Jelloian et al. | Jul 1997 | A |
| 5663091 | Yen et al. | Sep 1997 | A |
| 5705847 | Kashiwa et al. | Jan 1998 | A |
| 5714393 | Wild et al. | Feb 1998 | A |
| 5909103 | Williams | Jun 1999 | A |
| 5998810 | Hatano et al. | Dec 1999 | A |
| 6008684 | Ker et al. | Dec 1999 | A |
| 6097046 | Plumton | Aug 2000 | A |
| 6100571 | Mizuta et al. | Aug 2000 | A |
| 6292500 | Kouchi et al. | Sep 2001 | B1 |
| 6307220 | Yamazaki | Oct 2001 | B1 |
| 6316793 | Sheppard et al. | Nov 2001 | B1 |
| 6373082 | Ohno et al. | Apr 2002 | B1 |
| 6429468 | Hsu et al. | Aug 2002 | B1 |
| 6475889 | Ring | Nov 2002 | B1 |
| 6486502 | Sheppard et al. | Nov 2002 | B1 |
| 6504235 | Schmitz et al. | Jan 2003 | B2 |
| 6515303 | Ring | Feb 2003 | B2 |
| 6548333 | Smith | Apr 2003 | B2 |
| 6552373 | Ando et al. | Apr 2003 | B2 |
| 6580101 | Yoshida | Jun 2003 | B2 |
| 6583454 | Sheppard et al. | Jun 2003 | B2 |
| 6586781 | Wu et al. | Jul 2003 | B2 |
| 6624452 | Yu et al. | Sep 2003 | B2 |
| 6633195 | Baudelot et al. | Oct 2003 | B2 |
| 6649497 | Ring | Nov 2003 | B2 |
| 6727531 | Redwing et al. | Apr 2004 | B1 |
| 6746938 | Uchiyama et al. | Jun 2004 | B2 |
| 6777278 | Smith | Aug 2004 | B2 |
| 6849882 | Chavarkar et al. | Feb 2005 | B2 |
| 6867078 | Green et al. | Mar 2005 | B1 |
| 6914273 | Ren et al. | Jul 2005 | B2 |
| 6946739 | Ring | Sep 2005 | B2 |
| 6979863 | Ryu | Dec 2005 | B2 |
| 6982204 | Saxler et al. | Jan 2006 | B2 |
| 7030428 | Saxler | Apr 2006 | B2 |
| 7038252 | Saito et al. | May 2006 | B2 |
| 7045404 | Sheppard et al. | May 2006 | B2 |
| 7053413 | D'Evelyn et al. | May 2006 | B2 |
| 7071498 | Johnson et al. | Jul 2006 | B2 |
| 7078743 | Murata et al. | Jul 2006 | B2 |
| 7084475 | Shelton et al. | Aug 2006 | B2 |
| 7109552 | Wu | Sep 2006 | B2 |
| 7125786 | Ring et al. | Oct 2006 | B2 |
| 7126212 | Enquist et al. | Oct 2006 | B2 |
| 7161194 | Parikh et al. | Jan 2007 | B2 |
| 7169634 | Zhao et al. | Jan 2007 | B2 |
| 7170111 | Saxler | Jan 2007 | B2 |
| 7199640 | De Cremoux et al. | Apr 2007 | B2 |
| 7217960 | Ueno et al. | May 2007 | B2 |
| 7230284 | Parikh et al. | Jun 2007 | B2 |
| 7238560 | Sheppard et al. | Jul 2007 | B2 |
| 7250641 | Saito et al. | Jul 2007 | B2 |
| 7253454 | Saxler | Aug 2007 | B2 |
| 7265399 | Sriram et al. | Sep 2007 | B2 |
| 7268375 | Shur et al. | Sep 2007 | B2 |
| 7304331 | Saito et al. | Dec 2007 | B2 |
| 7321132 | Robinson et al. | Jan 2008 | B2 |
| 7326971 | Harris et al. | Feb 2008 | B2 |
| 7332795 | Smith et al. | Feb 2008 | B2 |
| 7364988 | Harris et al. | Apr 2008 | B2 |
| 7375407 | Yanagihara et al. | May 2008 | B2 |
| 7382001 | Beach | Jun 2008 | B2 |
| 7388236 | Wu et al. | Jun 2008 | B2 |
| 7419892 | Sheppard et al. | Sep 2008 | B2 |
| 7429534 | Gaska et al. | Sep 2008 | B2 |
| 7432142 | Saxler et al. | Oct 2008 | B2 |
| 7436001 | Lee et al. | Oct 2008 | B2 |
| 7449730 | Kuraguchi | Nov 2008 | B2 |
| 7456443 | Saxler et al. | Nov 2008 | B2 |
| 7465967 | Smith et al. | Dec 2008 | B2 |
| 7465997 | Kinzer et al. | Dec 2008 | B2 |
| 7482788 | Yang | Jan 2009 | B2 |
| 7488992 | Robinson | Feb 2009 | B2 |
| 7501669 | Parikh et al. | Mar 2009 | B2 |
| 7501670 | Murphy | Mar 2009 | B2 |
| 7508014 | Tanimoto | Mar 2009 | B2 |
| 7544963 | Saxler | Jun 2009 | B2 |
| 7547925 | Wong et al. | Jun 2009 | B2 |
| 7548112 | Sheppard | Jun 2009 | B2 |
| 7550781 | Kinzer et al. | Jun 2009 | B2 |
| 7550783 | Wu et al. | Jun 2009 | B2 |
| 7550784 | Saxler et al. | Jun 2009 | B2 |
| 7566580 | Keller et al. | Jul 2009 | B2 |
| 7566918 | Wu et al. | Jul 2009 | B2 |
| 7573078 | Wu et al. | Aug 2009 | B2 |
| 7592211 | Sheppard et al. | Sep 2009 | B2 |
| 7598108 | Li et al. | Oct 2009 | B2 |
| 7601993 | Hoshi et al. | Oct 2009 | B2 |
| 7605017 | Hayashi et al. | Oct 2009 | B2 |
| 7612363 | Takeda et al. | Nov 2009 | B2 |
| 7612390 | Saxler et al. | Nov 2009 | B2 |
| 7615774 | Saxler | Nov 2009 | B2 |
| 7629627 | Mil'shtein et al. | Dec 2009 | B2 |
| 7638818 | Wu et al. | Dec 2009 | B2 |
| 7655962 | Simin et al. | Feb 2010 | B2 |
| 7678628 | Sheppard et al. | Mar 2010 | B2 |
| 7692263 | Wu et al. | Apr 2010 | B2 |
| 7700973 | Shen et al. | Apr 2010 | B2 |
| 7709269 | Smith et al. | May 2010 | B2 |
| 7709859 | Smith et al. | May 2010 | B2 |
| 7714360 | Otsuka et al. | May 2010 | B2 |
| 7723739 | Takano et al. | May 2010 | B2 |
| 7728356 | Suh et al. | Jun 2010 | B2 |
| 7745851 | Harris | Jun 2010 | B2 |
| 7755108 | Kuraguchi | Jul 2010 | B2 |
| 7759699 | Beach | Jul 2010 | B2 |
| 7759700 | Ueno et al. | Jul 2010 | B2 |
| 7777252 | Sugimoto et al. | Aug 2010 | B2 |
| 7777254 | Sato | Aug 2010 | B2 |
| 7795622 | Kikkawa et al. | Sep 2010 | B2 |
| 7795642 | Suh et al. | Sep 2010 | B2 |
| 7811872 | Hoshi et al. | Oct 2010 | B2 |
| 7812369 | Chini et al. | Oct 2010 | B2 |
| 7834380 | Ueda et al. | Nov 2010 | B2 |
| 7851825 | Suh et al. | Dec 2010 | B2 |
| 7855401 | Sheppard et al. | Dec 2010 | B2 |
| 7859014 | Nakayama et al. | Dec 2010 | B2 |
| 7859020 | Kikkawa et al. | Dec 2010 | B2 |
| 7859021 | Kaneko | Dec 2010 | B2 |
| 7875537 | Suvorov et al. | Jan 2011 | B2 |
| 7875907 | Honea et al. | Jan 2011 | B2 |
| 7875910 | Sheppard et al. | Jan 2011 | B2 |
| 7875914 | Sheppard | Jan 2011 | B2 |
| 7884394 | Wu et al. | Feb 2011 | B2 |
| 7884395 | Saito | Feb 2011 | B2 |
| 7892974 | Ring et al. | Feb 2011 | B2 |
| 7893424 | Eichler et al. | Feb 2011 | B2 |
| 7893500 | Wu et al. | Feb 2011 | B2 |
| 7898004 | Wu et al. | Mar 2011 | B2 |
| 7901994 | Saxler et al. | Mar 2011 | B2 |
| 7906799 | Sheppard et al. | Mar 2011 | B2 |
| 7915643 | Suh et al. | Mar 2011 | B2 |
| 7915644 | Wu et al. | Mar 2011 | B2 |
| 7919791 | Flynn et al. | Apr 2011 | B2 |
| 7928475 | Parikh et al. | Apr 2011 | B2 |
| 7932539 | Chen et al. | Apr 2011 | B2 |
| 7935985 | Mishra et al. | May 2011 | B2 |
| 7939391 | Suh et al. | May 2011 | B2 |
| 7948011 | Rajan et al. | May 2011 | B2 |
| 7955918 | Wu et al. | Jun 2011 | B2 |
| 7955984 | Ohki | Jun 2011 | B2 |
| 7956383 | Kuroda et al. | Jun 2011 | B2 |
| 7960756 | Sheppard et al. | Jun 2011 | B2 |
| 7961482 | Ribarich | Jun 2011 | B2 |
| 7965126 | Honea et al. | Jun 2011 | B2 |
| 7973335 | Okamoto et al. | Jul 2011 | B2 |
| 7982242 | Goto | Jul 2011 | B2 |
| 7985986 | Heikman et al. | Jul 2011 | B2 |
| 7985987 | Kaneko | Jul 2011 | B2 |
| 8039352 | Mishra et al. | Oct 2011 | B2 |
| 8044380 | Lee | Oct 2011 | B2 |
| 8049252 | Smith et al. | Nov 2011 | B2 |
| 8076698 | Ueda et al. | Dec 2011 | B2 |
| 8076699 | Chen et al. | Dec 2011 | B2 |
| 8093606 | Sonobe et al. | Jan 2012 | B2 |
| 8110425 | Yun | Feb 2012 | B2 |
| 8114717 | Palacios et al. | Feb 2012 | B2 |
| 8153515 | Saxler | Apr 2012 | B2 |
| 8174048 | Beach | May 2012 | B2 |
| 8178900 | Kurachi et al. | May 2012 | B2 |
| 8223458 | Mochizuki et al. | Jul 2012 | B2 |
| 8237196 | Saito | Aug 2012 | B2 |
| 8237198 | Wu et al. | Aug 2012 | B2 |
| 8264003 | Herman | Sep 2012 | B2 |
| 8361816 | Lee et al. | Jan 2013 | B2 |
| 8363437 | Wang et al. | Jan 2013 | B2 |
| 8389975 | Kikuchi et al. | Mar 2013 | B2 |
| 8389977 | Chu et al. | Mar 2013 | B2 |
| 8390000 | Chu et al. | Mar 2013 | B2 |
| 8404042 | Mizuhara et al. | Mar 2013 | B2 |
| 8431960 | Beach et al. | Apr 2013 | B2 |
| 8455885 | Keller et al. | Jun 2013 | B2 |
| 8471267 | Hayashi et al. | Jun 2013 | B2 |
| 8476125 | Khan et al. | Jul 2013 | B2 |
| 8492779 | Lee | Jul 2013 | B2 |
| 8502323 | Chen | Aug 2013 | B2 |
| 8519438 | Mishra et al. | Aug 2013 | B2 |
| 8525231 | Park et al. | Sep 2013 | B2 |
| 8530904 | Treu et al. | Sep 2013 | B2 |
| 8598937 | Lal et al. | Dec 2013 | B2 |
| 8603880 | Yamada | Dec 2013 | B2 |
| 8614460 | Matsushita | Dec 2013 | B2 |
| 8652948 | Horie et al. | Feb 2014 | B2 |
| 8674407 | Ando et al. | Mar 2014 | B2 |
| 8698198 | Kuraguchi | Apr 2014 | B2 |
| 8716141 | Dora et al. | May 2014 | B2 |
| 8742460 | Mishra et al. | Jun 2014 | B2 |
| 8772832 | Boutros | Jul 2014 | B2 |
| 8785305 | Ramdani | Jul 2014 | B2 |
| 8803246 | Wu et al. | Aug 2014 | B2 |
| 8816396 | Hwang et al. | Aug 2014 | B2 |
| 9443938 | Mishra et al. | Sep 2016 | B2 |
| 20030006437 | Mizuta et al. | Jan 2003 | A1 |
| 20030030056 | Callaway, Jr. | Feb 2003 | A1 |
| 20040119067 | Weeks, Jr. et al. | Jun 2004 | A1 |
| 20050133816 | Fan et al. | Jun 2005 | A1 |
| 20050189559 | Saito et al. | Sep 2005 | A1 |
| 20060076677 | Daubenspeck et al. | Apr 2006 | A1 |
| 20060145189 | Beach | Jul 2006 | A1 |
| 20060189109 | Fitzgerald | Aug 2006 | A1 |
| 20060202272 | Wu et al. | Sep 2006 | A1 |
| 20060226442 | Zhang et al. | Oct 2006 | A1 |
| 20070018199 | Sheppard et al. | Jan 2007 | A1 |
| 20070045670 | Kuraguchi | Mar 2007 | A1 |
| 20070128743 | Huang et al. | Jun 2007 | A1 |
| 20070131968 | Morita et al. | Jun 2007 | A1 |
| 20070145417 | Brar et al. | Jun 2007 | A1 |
| 20070205433 | Parikh et al. | Sep 2007 | A1 |
| 20070210329 | Goto | Sep 2007 | A1 |
| 20070228477 | Suzuki et al. | Oct 2007 | A1 |
| 20070249119 | Saito | Oct 2007 | A1 |
| 20070295985 | Weeks, Jr. et al. | Dec 2007 | A1 |
| 20080073670 | Yang et al. | Mar 2008 | A1 |
| 20080272397 | Koudymov et al. | Nov 2008 | A1 |
| 20080308813 | Suh et al. | Dec 2008 | A1 |
| 20090045438 | Inoue et al. | Feb 2009 | A1 |
| 20090050936 | Oka | Feb 2009 | A1 |
| 20090072269 | Suh et al. | Mar 2009 | A1 |
| 20090075455 | Mishra | Mar 2009 | A1 |
| 20090085065 | Mishra et al. | Apr 2009 | A1 |
| 20090140262 | Ohki et al. | Jun 2009 | A1 |
| 20100044752 | Marui | Feb 2010 | A1 |
| 20100065923 | Charles et al. | Mar 2010 | A1 |
| 20100133506 | Nakanishi et al. | Jun 2010 | A1 |
| 20100203234 | Anderson et al. | Aug 2010 | A1 |
| 20100219445 | Yokoyama et al. | Sep 2010 | A1 |
| 20110012110 | Sazawa et al. | Jan 2011 | A1 |
| 20120086049 | Hwang et al. | Apr 2012 | A1 |
| 20120217512 | Renaud | Aug 2012 | A1 |
| 20120267637 | Jeon et al. | Oct 2012 | A1 |
| 20130056744 | Mishra et al. | Mar 2013 | A1 |
| 20130328061 | Chu et al. | Dec 2013 | A1 |
| 20140084346 | Tajiri | Mar 2014 | A1 |
| 20140099757 | Parikh et al. | Apr 2014 | A1 |
| 20140264370 | Keller et al. | Sep 2014 | A1 |
| 20140264455 | Keller et al. | Sep 2014 | A1 |
| 20150021552 | Mishra et al. | Jan 2015 | A1 |
| 20180158909 | Mishra et al. | Jun 2018 | A1 |
| Number | Date | Country |
|---|---|---|
| 1596477 | Mar 2005 | CN |
| 1748320 | Mar 2006 | CN |
| 101107713 | Jan 2008 | CN |
| 101312207 | Nov 2008 | CN |
| 101897029 | Nov 2010 | CN |
| 102017160 | Apr 2011 | CN |
| 103477543 | Dec 2013 | CN |
| 103493206 | Jan 2014 | CN |
| 1 998 376 | Dec 2008 | EP |
| 2 188 842 | May 2010 | EP |
| 09-306926 | Nov 1997 | JP |
| 11-224950 | Aug 1999 | JP |
| 2000-058871 | Feb 2000 | JP |
| 2003-229566 | Aug 2003 | JP |
| 2003-244943 | Aug 2003 | JP |
| 2004-253620 | Sep 2004 | JP |
| 2004-260114 | Sep 2004 | JP |
| 2006-032749 | Feb 2006 | JP |
| 2006-033723 | Feb 2006 | JP |
| 2007-036218 | Feb 2007 | JP |
| 2007-505501 | Mar 2007 | JP |
| 2007-215331 | Aug 2007 | JP |
| 2008-091699 | Apr 2008 | JP |
| 2008-199771 | Aug 2008 | JP |
| 2008-243848 | Oct 2008 | JP |
| 2009-503815 | Jan 2009 | JP |
| 2009-524242 | Jun 2009 | JP |
| 2010-087076 | Apr 2010 | JP |
| 2010-525023 | Jul 2010 | JP |
| 2010-539712 | Dec 2010 | JP |
| 2011-0033584 | Mar 2011 | KR |
| 200924068 | Jun 2009 | TW |
| 200924201 | Jun 2009 | TW |
| 200947703 | Nov 2009 | TW |
| 201010076 | Mar 2010 | TW |
| 201027759 | Jul 2010 | TW |
| 201027912 | Jul 2010 | TW |
| 201036155 | Oct 2010 | TW |
| 201322443 | Jun 2013 | TW |
| WO 2004070791 | Aug 2004 | WO |
| WO 2004098060 | Nov 2004 | WO |
| WO 2005036749 | Apr 2005 | WO |
| WO 2005070007 | Aug 2005 | WO |
| WO 2005070009 | Aug 2005 | WO |
| WO 2006114883 | Nov 2006 | WO |
| WO 2007077666 | Jul 2007 | WO |
| WO 2007108404 | Sep 2007 | WO |
| WO 2008120094 | Oct 2008 | WO |
| WO 2009036181 | Mar 2009 | WO |
| WO 2009036266 | Mar 2009 | WO |
| WO 2009039028 | Mar 2009 | WO |
| WO 2009039041 | Mar 2009 | WO |
| WO 2009076076 | Jun 2009 | WO |
| WO 2009132039 | Oct 2009 | WO |
| WO 2010039463 | Apr 2010 | WO |
| WO 2010068554 | Jun 2010 | WO |
| WO 2010090885 | Aug 2010 | WO |
| WO 2010132587 | Nov 2010 | WO |
| WO 2011031431 | Mar 2011 | WO |
| WO 2011072027 | Jun 2011 | WO |
| WO 2013052833 | Apr 2013 | WO |
| Entry |
|---|
| Authorized officer Ausra Kaveckaite, International Search Report/Written Opinion in PCT/US2017/035254, dated Aug. 1, 2017, 19 pages. |
| Authorized officer Chung Keun Lee, International Search Report and Written Opinion in PCT/US2008/076030, dated Mar. 23, 2009, 10 pages. |
| Authorized officer Yolaine Cussac, International Preliminary Report on Patentability in PCT/US2008/076030, dated Mar. 25, 2010, 5 pages. |
| Authorized officer Chung Keun Lee, International Search Report and Written Opinion in PCT/US2008/076079, dated Mar. 20, 2009, 11 pages. |
| Authorized officer Nora Lindner, International Preliminary Report on Patentability in PCT/US2008/076079, dated Apr. 1, 2010, 6 pages. |
| Authorized officer Keon Hyeong Kim, International Search Report and Written Opinion in PCT/US2008/076160 dated Mar. 18, 2009, 11 pages. |
| Authorized officer Simin Baharlou, International Preliminary Report on Patentability in PCT/US2008/076160, dated Mar. 25 2010, 6 pages. |
| Authorized officer Chung Keun Lee, International Search Report and Written Opinion in PCT/US2008/076199, dated Mar. 24, 2009, 11 pages. |
| Authorized officer Dorothée Mülhausen, International Preliminary Report on Patentability in PCT/US2008/076199, dated Apr. 1, 2010, 6 pages. |
| Authorized officer Keon Hyeong Kim, International Search Report and Written Opinion in PCT/US2008/085031, dated Jun. 24, 2009, 11 pages. |
| Authorized officer Yolaine Cussac, International Preliminary Report on Patentability in PCT/US2008/085031, dated Jun. 24, 2010, 6 pages. |
| Authorized officer Tae Hoon Kim, International Search Report and Written Opinion in PCT/US2009/041304, dated Dec. 18, 2009, 13 pages. |
| Authorized officer Dorothëe Mülhausen, International Preliminary Report on Patentability, in PCT/US2009/041304, dated Nov. 4, 2010, 8 pages. |
| Authorized officer Sung Hee Kim, International Search Report and the Written Opinion in PCT/US2009/057554, dated May 10, 2010, 13 pages. |
| Authorized Officer Gijsbertus Beijer, International Preliminary Report on Patentability in PCT/US2009/057554, dated Mar. 29, 2011, 7 pages. |
| Authorized officer Cheon Whan Cho, International Search Report and Written Opinion in PCT/US2009/066647, dated Jul. 1, 2010, 16 pages. |
| Authorized officer Athina Nikitas-Etienne, International Preliminary Report on Patentability in PCT/US2009/066647, dated Jun. 23, 2011, 12 pages. |
| Authorized officer Sung Chan Chung, International Search Report and Written Opinion for PCT/US2010/021824, dated Aug. 23, 2010, 9 pages. |
| Authorized officer Beate Giffo-Schmitt, International Preliminary Report on Patentability in PCT/US2010/021824, dated Aug. 18, 2011, 6 pages. |
| Authorized officer Sang Ho Lee, International Search Report and Written Opinion in PCT/US2010/034579, dated Dec. 24, 2010, 9 pages. |
| Authorized officer Nora Lindner, International Preliminary Report on Patentability in PCT/US2010/034579, dated Nov. 24, 2011, 7 pages. |
| Authorized officer Jeongmin Choi, International Search Report and Written Opinion in PCT/US2010/046193, dated Apr. 26, 2011, 13 pages. |
| Authorized officer Philippe Bécamel, International Preliminary Report on Patentability in PCT/US2010/046193, dated Mar. 8, 2012, 10 pages. |
| Authorized officer Sang Ho Lee, International Search Report and Written Opinion in PCT/US2010/059486, dated Jul. 26, 2011, 9 pages. |
| Authorized officer Nora Lindner, International Preliminary Report on Patentability in PCT/US2010/059486, dated Jun. 21, 2012, 6 pages. |
| Authorized officer Kwan Sik Sul, International Search Report and Written Opinion in PCT/US2011/063975, dated May 18, 2012, 8 pages. |
| Authorized officer Simin Baharlou, International Preliminary Report on Patentability in PCT/US2011/063975, dated Jun. 27, 2013, 5 pages. |
| Authorized officer Sang-Taek Kim, International Search Report and Written Opinion in PCT/US2011/061407, dated May 22, 2012, 10 pages. |
| Authorized officer Lingfei Bai, International Preliminary Report on Patentability in PCT/US2011/061407, dated Jun. 6, 2013, 7 pages. |
| Authorized officer Kwan Sik Sul, International Search Report and Written Opinion in PCT/US2012/023160, dated May 24, 2012, 9 pages. |
| Authorized officer Simin Baharlou, International Preliminary Report on Patentability in PCT/US2012/023160, dated Aug. 15, 2013, 6 pages. |
| Authorized officer Jeongmin Choi, International Search Report and Written Opinion in PCT/US2012/027146, dated Sep. 24, 2012, 12 pages. |
| Authorized officer Athina Nickitas-Etienne, International Preliminary Report on Patentability in PCT/US2012/027146, dated Sep. 19, 2013, 9 pages. |
| Authorized officer Tae Hoon Kim, International Search Report and Written Opinion in PCT/US2013/035837, dated Jul. 30, 2013, 9 pages. |
| Authorized officer Agnès Wittmann-Regis, International Preliminary Report on Patentability in PCT/US2013/035837, dated Oct. 23, 2014, 6 pages. |
| Authorized officer Sang Won Choi, International Search Report and Written Opinion in PCT/US2013/048275, dated Oct. 14, 2013, 17 pages. |
| Authorized officer Simin Baharlou, International Preliminary Report on Patentability in PCT/US2013/048275, dated Jan. 8, 2015, 14 pages. |
| Authorized officer Hye Lyun Park, International Search Report and Written Opinion in PCT/US2013/050914, dated Oct. 18, 2013, 11 pages. |
| Authorized officer Yukari Nakamura, International Preliminary Report on Patentability in PCT/US2013/050914, dated Jan. 29, 2015, 8 pages. |
| Authorized officer Sang Won Choi, International Search Report and Written Opinion in PCT/US2013/024470, dated May 27, 2013, 12 pages. |
| Authorized officer Simin Baharlou, International Preliminary Report on Patentability in PCT/US2013/024470, dated Aug. 14, 2014, 9 pages. |
| Authorized officer June Young Son, International Search Report and Written Opinion in PCT/US2014/016298, dated May 23, 2014, 15 pages. |
| Authorized officer Kihwan Moon, International Preliminary Report on Patentability in PCT/US2014/016298, dated Aug. 27, 2015, 12 pages. |
| Authorized officer Tae Hoon Kim, International Search Report and Written Opinion in PCT/US2014/027523, dated Jul. 30, 2014, 14 pages. |
| Authorized officer Nora Lindner, International Preliminary Report on Patentability in PCT/US2014/027523, dated Sep. 24, 2015, 11 pages. |
| Authorized officer June Young Son, International Search Report and Written Opinion in PCT/US2014/024191, dated Aug. 7, 2014, 11 pages. |
| Authorized officer Kihwan Moon, International Preliminary Report on Patentability in PCT/US2014/024191, dated Sep. 24, 2015, 8 pages. |
| Authorized officer June Young Son, International Search Report and Written Opinion in PCT/US2014/046030, dated Oct. 21, 2014, 12 pages. |
| Authorized officer Agnès Wittmann-Regis, International Preliminary Report on Patentability in PCT/US2014/046030, dated Jan. 28, 2016, 9 pages. |
| Examiner Sebastian Moehl, European Search Report in Application No. 10 81 5813.0, dated Mar. 12, 2013, 9 pages. |
| Search Report and Action in TW Application No. 098132132, dated Dec. 6, 2012, 8 pages. |
| Search Report and Action in TW Application No. 098141930, dated Jul. 10, 2014, 7 pages. |
| Chinese First Office Action for Application No. 200880120050.6, dated Aug. 2, 2011, 10 pages. |
| Chinese First Office Action for Application No. 200980114639.X, dated May 14, 2012, 13 pages. |
| Ando et al., “10-W/mm AlGaN—GaN HFET with a Field Modulating Plate,” IEEE Electron Device Letters, 2003, 24(5):289-291. |
| Arulkumaran et al., “Enhancement of Breakdown Voltage by AlN Buffer Layer Thickness in AlGaN/GaN High-electron-mobility Transistors on 4 in. Diameter Silicon,” Applied Physics Letters, 2005, 86:123503-1-3. |
| Arulkumaran et al. “Surface Passivation Effects on AlGaN/GaN High-Electron-Mobility Transistors with SiO2, Si3N4, and Silicon Oxynitride,” Applied Physics Letters, 2004, 84(4):613-615. |
| Barnett and Shinn, “Plastic and Elastic Properties of Compositionally Modulated Thin Films,” Annu. Rev. Mater. Sci., 1994, 24:481-511. |
| Chen et al., “High-performance AlGaN/GaN Lateral Field-effect Rectifiers Compatible with High Electron Mobility Transistors,” Applied Physics Letters, 2008, 92, 253501-1-3. |
| Cheng et al., “Flat GaN Epitaxial Layers Grown on Si(111) by Metalorganic Vapor Phase Epitaxy Using Step-graded AlGaN Intermediate Layers,” Journal of Electronic Materials, 2006, 35(4):592-598. |
| Coffie, “Characterizing and Suppressing DC-to-RF Dispersion in AlGaN/GaN High Electron Mobility Transistors,” 2003, PhD Thesis, University of California, Santa Barbara, 169 pages. |
| Coffie et al., “Unpassivated ρ-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GhZ,” Electronic Letters, 2003, 39(19):1419-1420. |
| Chu et al., “1200-V Normally Off GaN-on-Si Field-effect Transistors with Low Dynamic On-Resistance,” IEEE Electron Device Letters, 2011, 32(5):632-634. |
| Dora et al., “High Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrated Slant Field Plates,” IEEE Electron Device Letters, 2006, 27(9):713-715. |
| Dora et al., “ZrO2 Gate Dielectrics Produced by Ultraviolet Ozone Oxidation for GaN and AlGaN/GaN Transistors,” J. Vac. Sci. Technol. B, 2006, 24(2)575-581. |
| Dora, “Understanding Material and Process Limits for High Breakdown Voltage AlGaN/GaN HEMTs,” PhD Thesis, University of California, Santa Barbara, Mar. 2006, 157 pages. |
| Fanciulli et al., “Structural and Electrical Properties of HfO2 Films Grown by Atomic Layer Deposition on Si, Ge, GaAs and GaN,” Mat. Res. Soc. Symp. Proc., 2004, vol. 786, 6 pages. |
| Green et al., “The Effect of Surface Passivation on the Microwave Characteristics of Undoped AlGaN/GaN HEMT's,” IEEE Electron Device Letters, 2000, 21(6):268 270. |
| Gu et al., “AlGaN/GaN MOS Transistors using Crystalline ZrO2 as Gate Dielectric,” Proceedings of SPIE, 2007, vol. 6473, 64730S-1-8. |
| Higashiwaki et al. “AlGaN/GaN Heterostructure Field-Effect Transistors on 4H—SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz,” Applied Physics Express, 2008, 021103-1-3. |
| Hwang et al., “Effects of a Molecular Beam Epitaxy Grown AlN Passivation Layer on AlGaN/GaN Heterojunction Field Effect Transistors,” Solid-State Electronics, 2004, 48:363-366. |
| Im et al., “Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure with Extremely High 2DEG Density Grown on Silicon Substrate,” IEEE Electron Device Letters, 2010, 31(3):192-194. |
| Karmalkar and Mishra, “Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using a Field Plate,” IEEE Transactions on Electron Devices, 2001, 48(8):1515-1521. |
| Karmalkar and Mishra, “Very High Voltage AlGaN/GaN High Electron Mobility Transistors Using a Field Plate Deposited on a Stepped Insulator,” Solid-State Electronics, 2001, 45:1645-1652. |
| Keller et al., “GaN-GaN Junctions with Ultrathin AlN Interlayers: Expanding Heterojunction Design,” Applied Physics Letters, 2002, 80(23):4387-4389. |
| Khan et al., “AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor,” IEEE Electron Device Letters, 2000, 21(2):63-65. |
| Kim, “Process Development and Device Characteristics of AlGaN/GaN HEMTs for High Frequency Applications,” PhD Thesis, University of Illinois at Urbana-Champaign, 2007, 120 pages. |
| Kumar et al., “High Transconductance Enhancement-mode AlGaN/GaN HEMTs on SiC Substrate,” Electronics Letters, 2003, 39(24):1758-1760. |
| Kuraguchi et al., “Normally-off GaN-MISFET with Well-controlled Threshold Voltage,” Phys. Stats. Sol., 2007, 204(6):2010-2013. |
| Lanford et al., “Recessed-gate Enhancement-mode GaN HEMT with High Threshold Voltage,” Electronic Letters, 2005, 41(7):449-450. |
| Lee et al., “Self-aligned Process for Emitter- and Base-regrowth GaN HBTs and BJTs,” Solid-State Electronics, 2001, 45:243-247. |
| Marchand et al., “Metalorganic Chemical Vapor Deposition on GaN on Si(111): Stress Control and Application to Filed-effect Transistors,” Journal of Applied Physics, 2001, 89(12):7846-7851. |
| Mishra et al., “AlGaN/GaN HEMTs—An Overview of Device Operation and Applications,” Proceedings of the IEEE, 2002, 90(6):1022-1031. |
| Nanjo et al., “Remarkable Breakdown Voltage Enhancement in AlGaN Channel High Electron Mobility Transistors,” Applied Physics Letters 92 (2008), 3 pages. |
| Napierala et al., “Selective GaN Epitaxy on Si(111) Substrates Using Porous Aluminum Oxide Buffer Layers,” Journal of the Electrochemical Society, 2006. 153(2):G125-G127, 4 pages. |
| Oka and Nozawa, “AlGaN/GaN Recessed MIS-gate HFET with High-threshold-voltage Normally-off Operation for Power Electronics Applications,” IEEE Electron Device Letters, 2008, 29(7):668-670. |
| Palacios et al., “AlGaN/GaN HEMTs with an InGaN-based Back-barrier,” Device Research Conference Digest, 2005, DRC '05 63rd, pp. 181-182. |
| Palacios et al., “AlGaN/GaN High Electron Mobility Transistors with InGaN Back-Barriers,” IEEE Electron Device Letters, 2006, 27(1):13-15. |
| Palacios et al., “Nitride-based High Electron Mobility Transistors with a GaN Spacer,” Applied Physics Letters, 2006, 89:073508-1-3. |
| Pei et al., “Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs,” IEEE Electron Device Letters, 2009, 30(4):313-315. |
| Tracy Frost, “Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications,” SBIR N121-090 (Navy), 2012, 3 pages. |
| Rajan et al., “Advanced Transistor Structures Based on N-face GaN,” 32M International Symposium on Compound Semiconductors (ISCS), Sep. 18-22, 2005, Europa-Park Rust, Germany, 2 pages. |
| Reiher et al., “Efficient Stress Relief in GaN Heteroepitaxy on Si(111) Using Low-temperature AlN Interlayers,” Journal of Crystal Growth, 2003, 248:563-567. |
| Saito et al., “Recessed-gate Structure Approach Toward Normally Off High-voltage AlGaN/GaN HEMT for Power Electronics Applications,” IEEE Transactions on Electron Device, 2006, 53(2):356-362. |
| Shan et al., “Dependence of the Fundamental Band Gap of AlxGa1-xN on Alloy Composition and Pressure,” Journal of Applied Physics, 1999, 85(12):8505-8507. |
| Shelton et al., “Selective Area Growth and Characterization of AlGaN/GaN Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition,” IEEE Transactions on Electron Devices, 2001, 48(3):490-494. |
| Shen, “Advanced Polarization-based Design of AlGaN/GaN HEMTs,” Jun. 2004, PhD Thesis, University of California, Santa Barbara, 192 pages. |
| Sugiura et al., “Enhancement-mode η-channel GaN MOSFETs Fabricated on ρ-GaN Using HfO2 as Gate Oxide,” Electronics Letters, 2007, vol. 43, No. 17, 2 pages. |
| Suh et al. “High-Breakdown Enhancement-mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate,” Electron Devices Meeting, 2006, IEDM '06 International, 3 pages. |
| Tipirneni et al. “Silicon Dioxide-encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications,” IEEE Electron Device Letters, 2007, 28(9):784-786. |
| Vetury et al., “Direct Measurement of Gate Depletion in High Breakdown (405V) Al/GaN/GaN Heterostructure Field Effect Transistors,” IEDM 98, 1998, pp. 55-58. |
| Wang et al., “Comparison of the Effect of Gate Dielectric Layer on 2DEG Carrier Concentration in Strained AlGaN/GaN Heterostructure,” Mater. Res. Soc. Symp. Proc., 2007, vol. 831, 6 pages. |
| Wang et al., “Enhancement-mode Si3N4/AlGaN/GaN MISHFETs,” IEEE Electron Device Letters, 2006, 27(10):793-795. |
| Wu, “AlGaN/GaN Microwave Power High-Mobility Transistors,” PhD Thesis, University of California, Santa Barbara, Jul. 1997, 134 pages. |
| Wu et al., “A 97.8% Efficient GaN HEMT Boost Converter with 300-W Output Power at 1 MHz,” Electronic Device Letters, 2008, IEEE, 29(8):824-826. |
| Yoshida, “AlGan/GaN Power FET,” Furukawa Review, 2002, 21:7-11. |
| Zhang, “High Voltage GaN HEMTs with Low On-resistance for Switching Applications,” PhD Thesis, University of California, Santa Barbara, Sep. 2002, 166 pages. |
| Zhanghong Content, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, “Two-Dimensional Electron Gas and High Electron Mobility Transistor (HEMT),” Dec. 31, 1984, 17 pages. |
| Number | Date | Country | |
|---|---|---|---|
| 20190198615 A1 | Jun 2019 | US |
| Number | Date | Country | |
|---|---|---|---|
| 62343782 | May 2016 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 15564498 | US | |
| Child | 16287211 | US |
