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Dawon Kahng
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Bridgewater, NJ, US
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last 30 patents
Information
Patent Grant
Nitrided silicon dioxide layers for semiconductor integrated circuits
Patent number
4,623,912
Issue date
Nov 18, 1986
AT&T Bell Laboratories
Chuan C. Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for planarizing patterned surfaces
Patent number
4,460,434
Issue date
Jul 17, 1984
AT&T Bell Laboratories
Leo F. Johnson
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating MOS field effect transistors
Patent number
4,324,038
Issue date
Apr 13, 1982
Bell Telephone Laboratories, Incorporated
Chuan C. Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fabrication of semiconductor devices having planar recessed oxide i...
Patent number
4,271,583
Issue date
Jun 9, 1981
Bell Telephone Laboratories, Incorporated
Dawon Kahng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
MOS Devices having buried terminal zones under local oxide regions
Patent number
4,214,359
Issue date
Jul 29, 1980
Bell Telephone Laboratories, Incorporated
Dawon Kahng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing a buried junction memory device
Patent number
4,135,289
Issue date
Jan 23, 1979
Bell Telephone Laboratories, Incorporated
John R. Brews
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating multilayer insulator-semiconductor memory ap...
Patent number
3,964,085
Issue date
Jun 15, 1976
Bell Telephone Laboratories, Incorporated
Dawon Kahng
G11 - INFORMATION STORAGE
Information
Patent Grant
Charge effects in doped silicon dioxide
Patent number
3,945,031
Issue date
Mar 16, 1976
Bell Telephone Laboratories, Incorporated
Dawon Kahng
H01 - BASIC ELECTRIC ELEMENTS