Dhanyakumar Mahaveer Sathaiya

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
2D channel transistors with low contact resistance
- Patent number 12,166,079
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel structure
- Patent number 12,087,819
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures for stacked semiconductor devices
- Patent number 12,074,068
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of dopant deactivation underneath gate
- Patent number 12,068,374
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with channel and method for forming...
- Patent number 11,843,032
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huang-Siang Lan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing isolation layers in stacked transistor st...
- Patent number 11,798,985
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for stacked semiconductor devices
- Patent number 11,776,960
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2d-channel transistor structure with source-drain engineering
- Patent number 11,728,391
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel structure
- Patent number 11,476,333
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including two-dimensional material and method...
- Patent number 11,450,666
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with selective dopant deactivation underneath gate
- Patent number 10,985,246
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with selective dopant deactivation underneath gate
- Patent number 10,157,985
- Issue date Dec 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI transistors with improved source/drain structures with enhanced...
- Patent number 9,263,345
- Issue date Feb 16, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ken-Ichi Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with selective dopant deactivation underneath gate
- Patent number 9,153,662
- Issue date Oct 6, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor transistor device with optimized...
- Patent number 8,993,424
- Issue date Mar 31, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Wen Liu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
2d Channel Transistors With Low Contact Resistance
- Publication number 20240395870
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20240371940
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CHANNEL STRUCTURE
- Publication number 20240371939
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURES FOR STACKED SEMICONDUCTOR DEVICES
- Publication number 20240363417
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CHANNEL AND METHOD FOR FORMING...
- Publication number 20240063263
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huang-Siang LAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION LAYERS FOR STACKED TRANSISTOR STRUCTURES
- Publication number 20230378257
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufactoring Co., Ltd.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES FOR STACKED SEMICONDUCTOR DEVICES
- Publication number 20230369335
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D-Channel Transistor Structure with Source-Drain Engineering
- Publication number 20230361180
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures for Stacked Semiconductor Devices
- Publication number 20230062940
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structures for Stacked Semiconductor Devices
- Publication number 20230068065
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING TWO-DIMENSIONAL MATERIAL AND METHO...
- Publication number 20220384441
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Channel Structure
- Publication number 20220359660
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CHANNEL AND METHOD FOR FORMING...
- Publication number 20220320281
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huang-Siang LAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING TWO-DIMENSIONAL MATERIAL AND METHO...
- Publication number 20220165732
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION LAYERS FOR STACKED TRANSISTOR STRUCTURES
- Publication number 20220157936
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2d-Channel Transistor Structure with Source-Drain Engineering
- Publication number 20220045176
- Publication date Feb 10, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Channel Structure
- Publication number 20210305372
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20210234003
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20190165104
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20160005817
- Publication date Jan 7, 2016
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI TRANSISTORS WITH IMPROVED SOURCE/DRAIN STRUCTURES WITH ENHANCED...
- Publication number 20130277685
- Publication date Oct 24, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Ken-Ichi GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH SLECTIVE DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20130256796
- Publication date Oct 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR DEVICE WITH OPTIMIZED DOPANT PROFILE
- Publication number 20130113041
- Publication date May 9, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Chia-Wen LIU
- H01 - BASIC ELECTRIC ELEMENTS

Dhanyakumar Mahaveer Sathaiya

Person

Patents Grantslast 30 patents

2D channel transistors with low contact resistance

Dual channel structure

Epitaxial structures for stacked semiconductor devices

Method of dopant deactivation underneath gate

Semiconductor device structure with channel and method for forming...

Methods for manufacturing isolation layers in stacked transistor st...

Gate structures for stacked semiconductor devices

2d-channel transistor structure with source-drain engineering

Dual channel structure

Semiconductor devices including two-dimensional material and method...

MOSFET with selective dopant deactivation underneath gate

MOSFET with selective dopant deactivation underneath gate

SOI transistors with improved source/drain structures with enhanced...

MOSFET with selective dopant deactivation underneath gate

Method for forming a semiconductor transistor device with optimized...

Patents Applicationslast 30 patents

2d Channel Transistors With Low Contact Resistance

SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE

DUAL CHANNEL STRUCTURE

EPITAXIAL STRUCTURES FOR STACKED SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE STRUCTURE WITH CHANNEL AND METHOD FOR FORMING...

ISOLATION LAYERS FOR STACKED TRANSISTOR STRUCTURES

GATE STRUCTURES FOR STACKED SEMICONDUCTOR DEVICES

2D-Channel Transistor Structure with Source-Drain Engineering

Gate Structures for Stacked Semiconductor Devices

Epitaxial Structures for Stacked Semiconductor Devices

SEMICONDUCTOR DEVICES INCLUDING TWO-DIMENSIONAL MATERIAL AND METHO...

Dual Channel Structure

SEMICONDUCTOR DEVICE STRUCTURE WITH CHANNEL AND METHOD FOR FORMING...

SEMICONDUCTOR DEVICES INCLUDING TWO-DIMENSIONAL MATERIAL AND METHO...

ISOLATION LAYERS FOR STACKED TRANSISTOR STRUCTURES

2d-Channel Transistor Structure with Source-Drain Engineering

Dual Channel Structure

METHOD OF DOPANT DEACTIVATION UNDERNEATH GATE

MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE

MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE

SOI TRANSISTORS WITH IMPROVED SOURCE/DRAIN STRUCTURES WITH ENHANCED...

MOSFET WITH SLECTIVE DOPANT DEACTIVATION UNDERNEATH GATE

SEMICONDUCTOR TRANSISTOR DEVICE WITH OPTIMIZED DOPANT PROFILE