Diane C. Boyd

Person

LaGrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and structure for strained FinFET devices
- Patent number 8,669,145
- Issue date Mar 11, 2014
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxidation method for altering a film structure
- Patent number 7,741,166
- Issue date Jun 22, 2010
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,655,557
- Issue date Feb 2, 2010
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for strained FinFET devices
- Patent number 7,602,021
- Issue date Oct 13, 2009
- International Business Machines Corporation
- Bruce Bennett Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed semiconductor device structures having granular semiconduc...
- Patent number 7,488,658
- Issue date Feb 10, 2009
- International Business Machines Corporation
- Bruce B Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant an...
- Patent number 7,482,243
- Issue date Jan 27, 2009
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,411,227
- Issue date Aug 12, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-integrated strained silicon n- and p-MOSFETs
- Patent number 7,396,747
- Issue date Jul 8, 2008
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-integrated strained silicon n- and p-MOSFETs
- Patent number 7,273,800
- Issue date Sep 25, 2007
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid planar and FinFET CMOS devices
- Patent number 7,250,658
- Issue date Jul 31, 2007
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin Si MOSFET device structure and method of manufacture
- Patent number 7,247,569
- Issue date Jul 24, 2007
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS transistor structure including film having reduced stress by e...
- Patent number 7,202,516
- Issue date Apr 10, 2007
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bondin...
- Patent number 7,166,521
- Issue date Jan 23, 2007
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed semiconductor device structures having granular semiconduc...
- Patent number 7,122,849
- Issue date Oct 17, 2006
- International Business Machines Corporation
- Bruce B Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant an...
- Patent number 7,075,150
- Issue date Jul 11, 2006
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,056,782
- Issue date Jun 6, 2006
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin body super-steep retrograde well (SSRW) FET devices
- Patent number 7,002,214
- Issue date Feb 21, 2006
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxidation method for altering a film structure and CMOS transistor...
- Patent number 6,982,196
- Issue date Jan 3, 2006
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device structure with mid-gap metal gate
- Patent number 6,916,698
- Issue date Jul 12, 2005
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid planar and finFET CMOS devices
- Patent number 6,911,383
- Issue date Jun 28, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and process to make multiple-threshold metal gates CMOS tech...
- Patent number 6,846,734
- Issue date Jan 25, 2005
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully-depleted SOI MOSFETs with low source and drain resistance and...
- Patent number 6,841,831
- Issue date Jan 11, 2005
- International Business Machines Corporation
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI wafers with 30-100 Å buried oxide (BOX) created by wafe...
- Patent number 6,835,633
- Issue date Dec 28, 2004
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device structure with mid-gap metal gate
- Patent number 6,762,469
- Issue date Jul 13, 2004
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSF...
- Patent number 6,660,598
- Issue date Dec 9, 2003
- International Business Machines Corporation
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with vertical gate side walls and method f...
- Patent number 6,593,617
- Issue date Jul 15, 2003
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anisotropic nitride etch process with high selectivity to oxide and...
- Patent number 6,461,529
- Issue date Oct 8, 2002
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene-gate process for the fabrication of MOSFET devices with m...
- Patent number 6,440,808
- Issue date Aug 27, 2002
- International Business Machines Corporation
- Diane Catherine Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with high dielectric constant gate insulator and minimum ove...
- Patent number 6,353,249
- Issue date Mar 5, 2002
- International Businsess Machines Corporation
- Diane Catherine Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOSFET with high dielectric constant gate insulato...
- Patent number 6,271,094
- Issue date Aug 7, 2001
- International Business Machines Corporation
- Diane Catherine Boyd
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS
- Publication number 20080251813
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS SILICIDE METAL GATE INTEGRATION
- Publication number 20080254622
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED SEMICONDUCTOR DEVICE STRUCTURES HAVING GRANULAR SEMICONDUC...
- Publication number 20080064172
- Publication date Mar 13, 2008
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS
- Publication number 20070278517
- Publication date Dec 6, 2007
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN Si MOSFET DEVICE STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20070228473
- Publication date Oct 4, 2007
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for strained FinFET devices
- Publication number 20070132039
- Publication date Jun 14, 2007
- International Business Machines Corporation
- Bruce Bennett Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultrathin-body schottky contact MOSFET
- Publication number 20070001223
- Publication date Jan 4, 2007
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant an...
- Publication number 20060211184
- Publication date Sep 21, 2006
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS silicide metal gate integration
- Publication number 20060189061
- Publication date Aug 24, 2006
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS transistor structure including film having reduced stress by e...
- Publication number 20060131659
- Publication date Jun 22, 2006
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxidation method for altering a film structure
- Publication number 20060105516
- Publication date May 18, 2006
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-integrated strained silicon n-and p-MOSFETs
- Publication number 20060091377
- Publication date May 4, 2006
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN BODY SUPER-STEEP RETROGRADE WELL (SSRW) FET DEVICES
- Publication number 20060022270
- Publication date Feb 2, 2006
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR STRAINED FINFET DEVICES
- Publication number 20060014338
- Publication date Jan 19, 2006
- International Business Machines Corporation
- Bruce Bennett Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid planar and FinFET CMOS devices
- Publication number 20050263831
- Publication date Dec 1, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS silicide metal gate integration
- Publication number 20050186747
- Publication date Aug 25, 2005
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-thin Si MOSFET device structure and method of manufacture
- Publication number 20050118826
- Publication date Jun 2, 2005
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant an...
- Publication number 20050116289
- Publication date Jun 2, 2005
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED SEMICONDUCTOR DEVICE STRUCTURES HAVING GRANULAR SEMICONDUC...
- Publication number 20050106799
- Publication date May 19, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and process to make multiple-threshold metal gates CMOS tech...
- Publication number 20050106788
- Publication date May 19, 2005
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDATION METHOD FOR ALTERING A FILM STRUCTURE AND CMOS TRANSISTOR...
- Publication number 20050093081
- Publication date May 5, 2005
- Internatioanal Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI wafers with 30-100 A buried oxide (BOX) created by wafer bondin...
- Publication number 20050042841
- Publication date Feb 24, 2005
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID PLANAR AND FinFET CMOS DEVICES
- Publication number 20040266076
- Publication date Dec 30, 2004
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS device structure with mid-gap metal gate
- Publication number 20040171205
- Publication date Sep 2, 2004
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and process to make multiple-threshold metal gates CMOS tech...
- Publication number 20040094804
- Publication date May 20, 2004
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI wafers with 30-100 A buried oxide (box) created by wafer bondin...
- Publication number 20040018699
- Publication date Jan 29, 2004
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully-depleted SOI MOSFETs with low source and drain resistance and...
- Publication number 20030211681
- Publication date Nov 13, 2003
- International Business Machines Corporation
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS device structure with mid-gap metal gate
- Publication number 20030197230
- Publication date Oct 23, 2003
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FULLY-DEPLETED SOI (SILICON-ON-INSULATOR) MOSFE...
- Publication number 20030162358
- Publication date Aug 28, 2003
- International Business Machines Corporation
- Hussein I. Hanafi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfet with high dielectric constant gate insulator and minimum ove...
- Publication number 20020028555
- Publication date Mar 7, 2002
- International Business Machines Corporation
- Diane Catherine Boyd
- H01 - BASIC ELECTRIC ELEMENTS

Diane C. Boyd

Person

Patents Grantslast 30 patents

Method and structure for strained FinFET devices

Oxidation method for altering a film structure

CMOS silicide metal gate integration

Method and structure for strained FinFET devices

Stressed semiconductor device structures having granular semiconduc...

Ultra-thin Si channel MOSFET using a self-aligned oxygen implant an...

CMOS silicide metal gate integration

Hetero-integrated strained silicon n- and p-MOSFETs

Hetero-integrated strained silicon n- and p-MOSFETs

Hybrid planar and FinFET CMOS devices

Ultra-thin Si MOSFET device structure and method of manufacture

CMOS transistor structure including film having reduced stress by e...

SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bondin...

Stressed semiconductor device structures having granular semiconduc...

Ultra-thin Si channel MOSFET using a self-aligned oxygen implant an...

CMOS silicide metal gate integration

Ultra-thin body super-steep retrograde well (SSRW) FET devices

Oxidation method for altering a film structure and CMOS transistor...

High performance CMOS device structure with mid-gap metal gate

Hybrid planar and finFET CMOS devices

Method and process to make multiple-threshold metal gates CMOS tech...

Fully-depleted SOI MOSFETs with low source and drain resistance and...

SOI wafers with 30-100 &#x0212B; buried oxide (BOX) created by wafe...

High performance CMOS device structure with mid-gap metal gate

Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSF...

Field effect transistors with vertical gate side walls and method f...

Anisotropic nitride etch process with high selectivity to oxide and...

Damascene-gate process for the fabrication of MOSFET devices with m...

MOSFET with high dielectric constant gate insulator and minimum ove...

Method of making MOSFET with high dielectric constant gate insulato...

Patents Applicationslast 30 patents

HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS

CMOS SILICIDE METAL GATE INTEGRATION

STRESSED SEMICONDUCTOR DEVICE STRUCTURES HAVING GRANULAR SEMICONDUC...

HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS

ULTRA-THIN Si MOSFET DEVICE STRUCTURE AND METHOD OF MANUFACTURE

Method and structure for strained FinFET devices

Ultrathin-body schottky contact MOSFET

Ultra-thin Si channel MOSFET using a self-aligned oxygen implant an...

CMOS silicide metal gate integration

CMOS transistor structure including film having reduced stress by e...

Oxidation method for altering a film structure

Hetero-integrated strained silicon n-and p-MOSFETs

ULTRA-THIN BODY SUPER-STEEP RETROGRADE WELL (SSRW) FET DEVICES

METHOD AND STRUCTURE FOR STRAINED FINFET DEVICES

Hybrid planar and FinFET CMOS devices

CMOS silicide metal gate integration

Ultra-thin Si MOSFET device structure and method of manufacture

Ultra-thin Si channel MOSFET using a self-aligned oxygen implant an...

STRESSED SEMICONDUCTOR DEVICE STRUCTURES HAVING GRANULAR SEMICONDUC...

Method and process to make multiple-threshold metal gates CMOS tech...

OXIDATION METHOD FOR ALTERING A FILM STRUCTURE AND CMOS TRANSISTOR...

SOI wafers with 30-100 A buried oxide (BOX) created by wafer bondin...

HYBRID PLANAR AND FinFET CMOS DEVICES

High performance CMOS device structure with mid-gap metal gate

Method and process to make multiple-threshold metal gates CMOS tech...

SOI wafers with 30-100 A buried oxide (box) created by wafer bondin...

Fully-depleted SOI MOSFETs with low source and drain resistance and...

High performance CMOS device structure with mid-gap metal gate

METHOD OF FORMING A FULLY-DEPLETED SOI (SILICON-ON-INSULATOR) MOSFE...

Mosfet with high dielectric constant gate insulator and minimum ove...

SOI wafers with 30-100 Å buried oxide (BOX) created by wafe...