Ding-Fang Chen

Person

Tah Chia Township, Taichung, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating semiconductor device isolation structure
- Patent number 10,269,616
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device
- Patent number 10,062,821
- Issue date Aug 28, 2018
- Epistar Corporation
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device including reflective layer
- Patent number 9,698,325
- Issue date Jul 4, 2017
- Epistar Corporation
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device isolation structure
- Patent number 9,673,082
- Issue date Jun 6, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices having dual high-mobility channels
- Patent number 9,472,552
- Issue date Oct 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diodes on concave texture substrate
- Patent number 9,373,755
- Issue date Jun 21, 2016
- Epistar Corporation
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices having dual high-mobility channels
- Patent number 9,257,506
- Issue date Feb 9, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device isolation structure
- Patent number 9,224,606
- Issue date Dec 29, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming light-generating device including reflective layer
- Patent number 9,214,613
- Issue date Dec 15, 2015
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode with textured substrate
- Patent number 9,130,115
- Issue date Sep 8, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package with through silicon vias
- Patent number 9,117,943
- Issue date Aug 25, 2015
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of a FinFET element
- Patent number 8,883,597
- Issue date Nov 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor epitaxy from a non-III-V substrate
- Patent number 8,878,252
- Issue date Nov 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Lin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode with current-spreading region
- Patent number 8,823,049
- Issue date Sep 2, 2014
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode on a conductive substrate
- Patent number 8,815,618
- Issue date Aug 26, 2014
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor epitaxy using lateral overgrowth
- Patent number 8,803,189
- Issue date Aug 12, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-alleviation layer for LED structures
- Patent number 8,779,445
- Issue date Jul 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Omnidirectional reflector
- Patent number 8,766,309
- Issue date Jul 1, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode with embedded elements
- Patent number 8,742,441
- Issue date Jun 3, 2014
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reflective layer between light-emitting diodes
- Patent number 8,716,723
- Issue date May 6, 2014
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor epitaxy from a non-III-V substrate
- Patent number 8,686,474
- Issue date Apr 1, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode with textured substrate
- Patent number 8,659,033
- Issue date Feb 25, 2014
- TSMC Solid State Lighting Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diodes on concave texture substrate
- Patent number 8,629,465
- Issue date Jan 14, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Omnidirectional reflector
- Patent number 8,609,448
- Issue date Dec 17, 2013
- TSMC Solid Lighting Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming chalcogenide semiconductor absorbers
- Patent number 8,546,176
- Issue date Oct 1, 2013
- TSMC Solid State Lighting Ltd.
- Wen-Chin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Light-emitting diode integration scheme
- Patent number 8,525,216
- Issue date Sep 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Light-emitting diode with non-metallic reflector
- Patent number 8,525,200
- Issue date Sep 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride based semiconductor structure with multiple conductive...
- Patent number 8,519,414
- Issue date Aug 27, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Lin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of separating light-emitting diode from a growth substrate
- Patent number 8,486,730
- Issue date Jul 16, 2013
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Realizing N-face III-nitride semiconductors by nitridation treatment
- Patent number 8,486,807
- Issue date Jul 16, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Fabricating Semiconductor Device Isolation Structure
- Publication number 20170330791
- Publication date Nov 16, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING DEVICE
- Publication number 20170271568
- Publication date Sep 21, 2017
- EPISTAR CORPORATION
- Ding-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spreading Device for a Cement Ground
- Publication number 20170009463
- Publication date Jan 12, 2017
- Ding-Nan Chen
- B25 - HAND TOOLS PORTABLE POWER-DRIVEN TOOLS MANIPULATORS
Information Patent Application
CMOS Devices having Dual High-Mobility Channels
- Publication number 20160155740
- Publication date Jun 2, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Semiconductor Device Isolation Structure
- Publication number 20160133506
- Publication date May 12, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING DEVICE
- Publication number 20160064632
- Publication date Mar 3, 2016
- EPISTAR CORPORATION
- Ding-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING DIODE WITH CURRENT-SPREADING REGION
- Publication number 20150053918
- Publication date Feb 26, 2015
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SEMICONDUCTOR PACKAGE WITH THROUGH SILICON VIAS
- Publication number 20140363910
- Publication date Dec 11, 2014
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reflective Layer for Light-Emitting Diodes
- Publication number 20140235001
- Publication date Aug 21, 2014
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-Emitting Diode with Textured Substrate
- Publication number 20140166979
- Publication date Jun 19, 2014
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate
- Publication number 20140159208
- Publication date Jun 12, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Lin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-Emitting Diodes on Concave Texture Substrate
- Publication number 20140087505
- Publication date Mar 27, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Omnidirectional Reflector
- Publication number 20140054637
- Publication date Feb 27, 2014
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-Emitting Diode with Current-Spreading Region
- Publication number 20130264539
- Publication date Oct 10, 2013
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OMNIDIRECTIONAL REFLECTOR
- Publication number 20130224892
- Publication date Aug 29, 2013
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate
- Publication number 20130126946
- Publication date May 23, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Lin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED Device with Embedded Top Electrode
- Publication number 20130082296
- Publication date Apr 4, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Separating Light-Emitting Diode from a Growth Substrate
- Publication number 20120298956
- Publication date Nov 29, 2012
- TSMC Solid State Lighting Ltd.
- Ding-Yuan Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Patterned Substrate for Hetero-epitaxial Growth of Group-III Nitrid...
- Publication number 20120171851
- Publication date Jul 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-Emitting Diodes on Concave Texture Substrate
- Publication number 20120119236
- Publication date May 17, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Semiconductor Device Isolation Structure
- Publication number 20120094464
- Publication date Apr 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-Emitting Diode Integration Scheme
- Publication number 20120025222
- Publication date Feb 2, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Light-Emitting Diode with Textured Substrate
- Publication number 20120025234
- Publication date Feb 2, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Based Semiconductor Structure with Multiple Conductive...
- Publication number 20120007048
- Publication date Jan 12, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Lin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group-III Nitride Epitaxial Layer on Silicon Substrate
- Publication number 20110318860
- Publication date Dec 29, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS
- Publication number 20110263072
- Publication date Oct 27, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CMOS Devices having Dual High-Mobility Channels
- Publication number 20110260261
- Publication date Oct 27, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Realizing N-Face III-Nitride Semiconductors by Nitridation Treatment
- Publication number 20110189837
- Publication date Aug 4, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate
- Publication number 20100068866
- Publication date Mar 18, 2010
- Chia-Lin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-Emitting Diode with Embedded Elements
- Publication number 20100059779
- Publication date Mar 11, 2010
- Ding-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS

Ding-Fang Chen

Person

Patents Grantslast 30 patents

Method of fabricating semiconductor device isolation structure

Light-emitting device

Light-emitting device including reflective layer

Method of fabricating semiconductor device isolation structure

CMOS devices having dual high-mobility channels

Light-emitting diodes on concave texture substrate

CMOS devices having dual high-mobility channels

Method of fabricating semiconductor device isolation structure

Method of forming light-generating device including reflective layer

Light-emitting diode with textured substrate

Semiconductor package with through silicon vias

Method of fabrication of a FinFET element

III-V compound semiconductor epitaxy from a non-III-V substrate

Light-emitting diode with current-spreading region

Light-emitting diode on a conductive substrate

III-V compound semiconductor epitaxy using lateral overgrowth

Stress-alleviation layer for LED structures

Omnidirectional reflector

Light-emitting diode with embedded elements

Reflective layer between light-emitting diodes

III-V compound semiconductor epitaxy from a non-III-V substrate

Light-emitting diode with textured substrate

Light-emitting diodes on concave texture substrate

Omnidirectional reflector

Forming chalcogenide semiconductor absorbers

Light-emitting diode integration scheme

Light-emitting diode with non-metallic reflector

III-nitride based semiconductor structure with multiple conductive...

Method of separating light-emitting diode from a growth substrate

Realizing N-face III-nitride semiconductors by nitridation treatment

Patents Applicationslast 30 patents

Method of Fabricating Semiconductor Device Isolation Structure

LIGHT-EMITTING DEVICE

Spreading Device for a Cement Ground

CMOS Devices having Dual High-Mobility Channels

Method of Fabricating Semiconductor Device Isolation Structure

LIGHT-EMITTING DEVICE

LIGHT-EMITTING DIODE WITH CURRENT-SPREADING REGION

NOVEL SEMICONDUCTOR PACKAGE WITH THROUGH SILICON VIAS

Reflective Layer for Light-Emitting Diodes

Light-Emitting Diode with Textured Substrate

III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate

Light-Emitting Diodes on Concave Texture Substrate

Omnidirectional Reflector

Light-Emitting Diode with Current-Spreading Region

OMNIDIRECTIONAL REFLECTOR

III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate

LED Device with Embedded Top Electrode

Method of Separating Light-Emitting Diode from a Growth Substrate

Patterned Substrate for Hetero-epitaxial Growth of Group-III Nitrid...

Light-Emitting Diodes on Concave Texture Substrate

Method of Fabricating Semiconductor Device Isolation Structure

Light-Emitting Diode Integration Scheme

Light-Emitting Diode with Textured Substrate

III-Nitride Based Semiconductor Structure with Multiple Conductive...

Group-III Nitride Epitaxial Layer on Silicon Substrate

FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS

CMOS Devices having Dual High-Mobility Channels

Realizing N-Face III-Nitride Semiconductors by Nitridation Treatment

III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate

Light-Emitting Diode with Embedded Elements