Dinkar V. Singh

Person

White Plains, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor-on-insulator (SOI) structures including gradient nitr...
- Patent number 8,546,920
- Issue date Oct 1, 2013
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) structures including gradient nitr...
- Patent number 8,288,826
- Issue date Oct 16, 2012
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of carbon nanotube diameter using CVD or PECVD growth
- Patent number 8,101,150
- Issue date Jan 24, 2012
- International Business Machines Corporation
- Alfred Grill
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor-on-insulator(SOI) structures including gradient nitri...
- Patent number 8,053,373
- Issue date Nov 8, 2011
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrathin SOI CMOS devices employing differential STI liners
- Patent number 8,021,956
- Issue date Sep 20, 2011
- International Business Machines Corporation
- Zhibin Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI CMOS with raised epitaxial source and drain and embe...
- Patent number 8,012,820
- Issue date Sep 6, 2011
- International Business Machines Corporation
- Amlan Majumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving semiconductor surfaces
- Patent number 7,776,624
- Issue date Aug 17, 2010
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature fusion bonding with high surface energy using a wet...
- Patent number 7,713,837
- Issue date May 11, 2010
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective incorporation of charge for transistor channels
- Patent number 7,687,863
- Issue date Mar 30, 2010
- International Business Machines Corporation
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrathin SOI CMOS devices employing differential STI liners
- Patent number 7,659,583
- Issue date Feb 9, 2010
- International Business Machines Corporation
- Zhibin Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of carbon nanotube diameter using CVD or PECVD growth
- Patent number 7,628,974
- Issue date Dec 8, 2009
- International Business Machines Corporation
- Alfred Grill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature fusion bonding with high surface energy using a wet...
- Patent number 7,566,631
- Issue date Jul 28, 2009
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) structures including gradient nitr...
- Patent number 7,396,776
- Issue date Jul 8, 2008
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective incorporation of charge for transistor channels
- Patent number 7,374,998
- Issue date May 20, 2008
- International Business Machines Corporation
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced T-gate structure for modulation doped field effect transis...
- Patent number 6,972,440
- Issue date Dec 6, 2005
- International Business Machines Corporation
- Dinkar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating silicon devices on sapphire with wafer bondin...
- Patent number 6,911,375
- Issue date Jun 28, 2005
- International Business Machines Corporation
- Kathryn W. Guarini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced T-gate structure for modulation doped field effect transis...
- Patent number 6,740,535
- Issue date May 25, 2004
- International Business Machines Corporation
- Dinkar Singh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURES INCLUDING GRADIENT NITR...
- Publication number 20130037885
- Publication date Feb 14, 2013
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURES INCLUDING GRADIENT NITR...
- Publication number 20120049317
- Publication date Mar 1, 2012
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI CMOS WITH RAISED EPITAXIAL SOURCE AND DRAIN AND EMBE...
- Publication number 20110165739
- Publication date Jul 7, 2011
- International Business Machines Corporation
- Amlan Majumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRATHIN SOI CMOS DEVICES EMPLOYING DIFFERENTIAL STI LINERS
- Publication number 20100105187
- Publication date Apr 29, 2010
- International Business Machines Corporation
- Zhibin Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING SEMICONDUCTOR SURFACES
- Publication number 20100009524
- Publication date Jan 14, 2010
- International Business Machines
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI CMOS WITH RAISED EPITAXIAL SOURCE AND DRAIN AND EMBE...
- Publication number 20090289305
- Publication date Nov 26, 2009
- International Business Machines Corporation
- Amlan Majumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF CARBON NANOTUBE DIAMETER USING CVD OR PECVD GROWTH
- Publication number 20090278114
- Publication date Nov 12, 2009
- International Business Machines Corporation
- Alfred Grill
- C30 - CRYSTAL GROWTH
Information Patent Application
ULTRATHIN SOI CMOS DEVICES EMPLOYING DIFFERENTIAL STI LINERS
- Publication number 20090045462
- Publication date Feb 19, 2009
- International Business Machines Corporation
- Zhibin Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE FUSION BONDING WITH HIGH SURFACE ENERGY USING A WET...
- Publication number 20080227270
- Publication date Sep 18, 2008
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR(SOI) STRUCTURES INCLUDING GRADIENT NITRI...
- Publication number 20080224256
- Publication date Sep 18, 2008
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE INCORPORATION OF CHARGE FOR TRANSISTOR CHANNELS
- Publication number 20080217682
- Publication date Sep 11, 2008
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI CMOS WITH RAISED EPITAXIAL SOURCE AND DRAIN AND EMBE...
- Publication number 20080217686
- Publication date Sep 11, 2008
- International Business Machines Corporation
- Amlan Majumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor-on-insulator (SOI) structures including gradient nitr...
- Publication number 20080014740
- Publication date Jan 17, 2008
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL ALLOY LAYER OVER CONDUCTIVE REGION OF TRANSISTOR DEVICE OF DI...
- Publication number 20070284654
- Publication date Dec 13, 2007
- Judith M. Rubino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective incorporation of charge for transistor channels
- Publication number 20070184619
- Publication date Aug 9, 2007
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature fusion bonding with high surface energy using a wet...
- Publication number 20060194414
- Publication date Aug 31, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of carbon nanotube diameter using CVD or PECVD growth
- Publication number 20050089467
- Publication date Apr 28, 2005
- International Business Machines Corporation
- Alfred Grill
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of fabricating silicon devices on sapphire with wafer bondin...
- Publication number 20040241958
- Publication date Dec 2, 2004
- International Business Machines Corporation
- Kathryn W. Guarini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced T-gate structure for modulation doped field effect transis...
- Publication number 20040140506
- Publication date Jul 22, 2004
- International Business Machines Corporation
- Dinkar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature fusion bonding with high surface energy using a wet...
- Publication number 20040126993
- Publication date Jul 1, 2004
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED T-GATE STRUCTURE FOR MODULATION DOPED FIELD EFFECT TRANSIS...
- Publication number 20040016972
- Publication date Jan 29, 2004
- Dinkar Singh
- H01 - BASIC ELECTRIC ELEMENTS

Dinkar V. Singh

Person

Patents Grantslast 30 patents

Semiconductor-on-insulator (SOI) structures including gradient nitr...

Semiconductor-on-insulator (SOI) structures including gradient nitr...

Control of carbon nanotube diameter using CVD or PECVD growth

Semiconductor-on-insulator(SOI) structures including gradient nitri...

Ultrathin SOI CMOS devices employing differential STI liners

Ultra-thin SOI CMOS with raised epitaxial source and drain and embe...

Method for improving semiconductor surfaces

Low temperature fusion bonding with high surface energy using a wet...

Selective incorporation of charge for transistor channels

Ultrathin SOI CMOS devices employing differential STI liners

Control of carbon nanotube diameter using CVD or PECVD growth

Low temperature fusion bonding with high surface energy using a wet...

Semiconductor-on-insulator (SOI) structures including gradient nitr...

Selective incorporation of charge for transistor channels

Enhanced T-gate structure for modulation doped field effect transis...

Method of fabricating silicon devices on sapphire with wafer bondin...

Enhanced T-gate structure for modulation doped field effect transis...

Patents Applicationslast 30 patents

SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURES INCLUDING GRADIENT NITR...

SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURES INCLUDING GRADIENT NITR...

ULTRA-THIN SOI CMOS WITH RAISED EPITAXIAL SOURCE AND DRAIN AND EMBE...

ULTRATHIN SOI CMOS DEVICES EMPLOYING DIFFERENTIAL STI LINERS

METHOD FOR IMPROVING SEMICONDUCTOR SURFACES

ULTRA-THIN SOI CMOS WITH RAISED EPITAXIAL SOURCE AND DRAIN AND EMBE...

CONTROL OF CARBON NANOTUBE DIAMETER USING CVD OR PECVD GROWTH

ULTRATHIN SOI CMOS DEVICES EMPLOYING DIFFERENTIAL STI LINERS

LOW TEMPERATURE FUSION BONDING WITH HIGH SURFACE ENERGY USING A WET...

SEMICONDUCTOR-ON-INSULATOR(SOI) STRUCTURES INCLUDING GRADIENT NITRI...

SELECTIVE INCORPORATION OF CHARGE FOR TRANSISTOR CHANNELS

ULTRA-THIN SOI CMOS WITH RAISED EPITAXIAL SOURCE AND DRAIN AND EMBE...

Semiconductor-on-insulator (SOI) structures including gradient nitr...

METAL ALLOY LAYER OVER CONDUCTIVE REGION OF TRANSISTOR DEVICE OF DI...

Selective incorporation of charge for transistor channels

Low temperature fusion bonding with high surface energy using a wet...

Control of carbon nanotube diameter using CVD or PECVD growth

Method of fabricating silicon devices on sapphire with wafer bondin...

Enhanced T-gate structure for modulation doped field effect transis...

Low temperature fusion bonding with high surface energy using a wet...

ENHANCED T-GATE STRUCTURE FOR MODULATION DOPED FIELD EFFECT TRANSIS...