Donald Y. Chao

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Gate stacks for semiconductor devices of different conductivity types
- Patent number 12,015,030
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yih-Ann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single metal that performs N work function and P work function in a...
- Patent number 11,289,481
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih-Ann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a single metal that performs N work function and...
- Patent number 9,960,160
- Issue date May 1, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih-Ann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and method of fabricating the same
- Patent number 9,634,104
- Issue date Apr 25, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd
- Donald Y. Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning a metal gate of semiconductor device
- Patent number 9,362,124
- Issue date Jun 7, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet and method of fabricating the same
- Patent number 9,053,934
- Issue date Jun 9, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning a metal gate of semiconductor device
- Patent number 8,993,452
- Issue date Mar 31, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit metal gate structure and method of fabrication
- Patent number 8,679,962
- Issue date Mar 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and method of fabricating the same
- Patent number 8,659,032
- Issue date Feb 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a single metal that performs N work function and...
- Patent number 8,524,588
- Issue date Sep 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih-Ann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning a metal gate of semiconductor device
- Patent number 8,357,617
- Issue date Jan 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gates of PMOS devices having high work functions
- Patent number 8,159,035
- Issue date Apr 17, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Donald Y. Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device gate structure including a gettering layer
- Patent number 7,989,321
- Issue date Aug 2, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOSFET device with localized stressor
- Patent number 7,335,544
- Issue date Feb 26, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a locally strained transistor
- Patent number 7,232,730
- Issue date Jun 19, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING A SINGLE METAL THAT PERFORMS N WORK FUNCTION AND...
- Publication number 20220216205
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih-Ann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Single Metal that Performs N Work Function and...
- Publication number 20180247937
- Publication date Aug 30, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih-Ann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND METHOD OF FABRICATING THE SAME
- Publication number 20150249138
- Publication date Sep 3, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE
- Publication number 20150206755
- Publication date Jul 23, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND METHOD OF FABRICATING THE SAME
- Publication number 20140134831
- Publication date May 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE
- Publication number 20140091402
- Publication date Apr 3, 2014
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND METHOD OF FABRICATING THE SAME
- Publication number 20130193446
- Publication date Aug 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Patterning a Metal Gate of Semiconductor Device
- Publication number 20130130488
- Publication date May 23, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE
- Publication number 20100048011
- Publication date Feb 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE GATE STRUCTURE INCLUDING A GETTERING LAYER
- Publication number 20100048010
- Publication date Feb 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION
- Publication number 20100044806
- Publication date Feb 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SINGLE METAL THAT PERFORMS N WORK FUNCTION AND...
- Publication number 20100038721
- Publication date Feb 18, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih-Ann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gates of PMOS Devices Having High Work Functions
- Publication number 20090014813
- Publication date Jan 15, 2009
- Donald Y. Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming tensile stress films for NFET performance enhance...
- Publication number 20080138983
- Publication date Jun 12, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hao-Ming Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET Device With Localized Stressor
- Publication number 20080128765
- Publication date Jun 5, 2008
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel semiconductor device with improved channel strain effect
- Publication number 20060267106
- Publication date Nov 30, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a locally strained transistor
- Publication number 20060246672
- Publication date Nov 2, 2006
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET device with localized stressor
- Publication number 20060125028
- Publication date Jun 15, 2006
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS

Donald Y. Chao

Person

Patents Grantslast 30 patents

Gate stacks for semiconductor devices of different conductivity types

Single metal that performs N work function and P work function in a...

Method of forming a single metal that performs N work function and...

FinFET and method of fabricating the same

Method of patterning a metal gate of semiconductor device

Finfet and method of fabricating the same

Method of patterning a metal gate of semiconductor device

Integrated circuit metal gate structure and method of fabrication

FinFET and method of fabricating the same

Method of forming a single metal that performs N work function and...

Method of patterning a metal gate of semiconductor device

Metal gates of PMOS devices having high work functions

Semiconductor device gate structure including a gettering layer

Method of making MOSFET device with localized stressor

Method of forming a locally strained transistor

Patents Applicationslast 30 patents

METHOD OF FORMING A SINGLE METAL THAT PERFORMS N WORK FUNCTION AND...

Method of Forming a Single Metal that Performs N Work Function and...

FINFET AND METHOD OF FABRICATING THE SAME

METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE

FINFET AND METHOD OF FABRICATING THE SAME

INTEGRATED CIRCUIT METAL GATE STRUCTURE

FINFET AND METHOD OF FABRICATING THE SAME

Method of Patterning a Metal Gate of Semiconductor Device

METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE GATE STRUCTURE INCLUDING A GETTERING LAYER

INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION

METHOD OF FORMING A SINGLE METAL THAT PERFORMS N WORK FUNCTION AND...

Metal Gates of PMOS Devices Having High Work Functions

Method of forming tensile stress films for NFET performance enhance...

MOSFET Device With Localized Stressor

Novel semiconductor device with improved channel strain effect

Method of forming a locally strained transistor

MOSFET device with localized stressor