Dongxue Zhao

Person

Wuhan, CN

People

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240212753
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240215234
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215273
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240215235
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215272
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240215458
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuxuan FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215271
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240206148
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240206181
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY AND CONTROLLING METHOD THEREOF, MEMORY SYSTEM AND ELECTRONIC...
- Publication number 20240164105
- Publication date May 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao YANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC FIELD EFFECT TRANSISTOR RANDOM ACCE...
- Publication number 20240164107
- Publication date May 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongxue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICES AND DATA ERASING METHODS
- Publication number 20240105266
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao YANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20230422524
- Publication date Dec 28, 2023
- Yangtze Memory Technologies Co., Ltd.
- Dongxue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20230422520
- Publication date Dec 28, 2023
- Yangtze Memory Technologies Co., Ltd.
- Dongyu Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20230363138
- Publication date Nov 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20230361030
- Publication date Nov 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20230361031
- Publication date Nov 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC FLASH MEMORY (DFM) WITH TRI-GATE FOR HIGH EFFICIENCY OPERATION
- Publication number 20230354577
- Publication date Nov 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- DongXue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC FLASH MEMORY (DFM) WITH RING-TYPE INSULATOR IN CHANNEL FOR...
- Publication number 20230354579
- Publication date Nov 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC FLASH MEMORY (DFM) WITH CHANNEL FIRST SCHEME
- Publication number 20230354578
- Publication date Nov 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC FLASH MEMORY (DFM) WITH MULTI-CELLS
- Publication number 20230354599
- Publication date Nov 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20230282576
- Publication date Sep 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20230189516
- Publication date Jun 15, 2023
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME
- Publication number 20230142290
- Publication date May 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- DongXue ZHAO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS IN STAGGERED LAYOUTS
- Publication number 20230133520
- Publication date May 4, 2023
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Dongxue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...
- Publication number 20230138205
- Publication date May 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...
- Publication number 20230133595
- Publication date May 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND STACKED STORAGE UNIT...
- Publication number 20230132574
- Publication date May 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Dongxue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...
- Publication number 20230134556
- Publication date May 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- H01 - BASIC ELECTRIC ELEMENTS

Dongxue Zhao

Person

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY AND CONTROLLING METHOD THEREOF, MEMORY SYSTEM AND ELECTRONIC...

THREE-DIMENSIONAL FERROELECTRIC FIELD EFFECT TRANSISTOR RANDOM ACCE...

NON-VOLATILE MEMORY DEVICES AND DATA ERASING METHODS

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

DYNAMIC FLASH MEMORY (DFM) WITH TRI-GATE FOR HIGH EFFICIENCY OPERATION

DYNAMIC FLASH MEMORY (DFM) WITH RING-TYPE INSULATOR IN CHANNEL FOR...

DYNAMIC FLASH MEMORY (DFM) WITH CHANNEL FIRST SCHEME

DYNAMIC FLASH MEMORY (DFM) WITH MULTI-CELLS

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

VERTICAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME

MEMORY DEVICES HAVING VERTICAL TRANSISTORS IN STAGGERED LAYOUTS

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND STACKED STORAGE UNIT...

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...