Doris W. Flatley

Person

Hillsboro Township, Somerset County, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit with stacked MOS field effect transistors
- Patent number 4,999,691
- Issue date Mar 12, 1991
- General Electric Company
- Sheng T. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a MOS transistor
- Patent number 4,927,777
- Issue date May 22, 1990
- Harris Corporation
- Sheng T. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-sapphire integrated circuits
- Patent number 4,735,917
- Issue date Apr 5, 1988
- General Electric Company
- Doris W. Flatley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure
- Patent number 4,722,912
- Issue date Feb 2, 1988
- RCA Corporation
- Doris W. Flatley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with internal gettering region
- Patent number 4,716,451
- Issue date Dec 29, 1987
- RCA Corporation
- Sheng T. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming multi-level metallization
- Patent number 4,662,064
- Issue date May 5, 1987
- RCA Corporation
- Sheng T. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure
- Patent number 4,658,495
- Issue date Apr 21, 1987
- RCA Corporation
- Doris W. Flatley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Profile control of boron implant
- Patent number 4,637,836
- Issue date Jan 20, 1987
- RCA Corporation
- Doris W. Flatley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for tapering openings in ternary glass coatings
- Patent number 4,349,584
- Issue date Sep 14, 1982
- RCA Corporation
- Doris W. Flatley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making radiation resistant MOS transistor
- Patent number 4,259,779
- Issue date Apr 7, 1981
- RCA Corporation
- Alfred C. Ipri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making a planar MOS silicon-on-insulating substrate device
- Patent number 4,178,191
- Issue date Dec 11, 1979
- RCA Corp.
- Doris W. Flatley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor structure
- Patent number 4,174,217
- Issue date Nov 13, 1979
- RCA Corporation
- Doris W. Flatley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating MNOS memory circuits
- Patent number 4,104,087
- Issue date Aug 1, 1978
- The United States of America as represented by the Secretary of the Air Force
- Alfred C. Ipri
- H01 - BASIC ELECTRIC ELEMENTS

Doris W. Flatley

Person

Patents Grantslast 30 patents

Integrated circuit with stacked MOS field effect transistors

Method of making a MOS transistor

Silicon-on-sapphire integrated circuits

Method of forming a semiconductor structure

Semiconductor device with internal gettering region

Method of forming multi-level metallization

Method of forming a semiconductor structure

Profile control of boron implant

Process for tapering openings in ternary glass coatings

Method of making radiation resistant MOS transistor

Process of making a planar MOS silicon-on-insulating substrate device

Method for making semiconductor structure

Method for fabricating MNOS memory circuits