Du-Hyeon Song

Person

Ulju-gun, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for interchanging welding tips of spot welding gun
- Patent number 9,908,204
- Issue date Mar 6, 2018
- KOREA T&M CO., LTD.
- Seung-Hae Lee
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Apparatus for changing welding tip
- Patent number 9,744,626
- Issue date Aug 29, 2017
- KOREA T&M CO. LTD.
- Seung-Hae Lee
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 8,765,572
- Issue date Jul 1, 2014
- Samsung Electronics Co., Ltd.
- Yong-lack Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors of semiconductor device having channel region in a chan...
- Patent number 7,696,570
- Issue date Apr 13, 2010
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed-type field effect transistor with reduced body effect
- Patent number 7,534,708
- Issue date May 19, 2009
- Samsung Electronics Co., Ltd.
- Dong-Hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain transistor employing selective epitaxial gr...
- Patent number 7,524,733
- Issue date Apr 28, 2009
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors of semiconductor device having channel region in a chan...
- Patent number 7,491,603
- Issue date Feb 17, 2009
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating fin field effect transistor using isotropic e...
- Patent number 7,429,505
- Issue date Sep 30, 2008
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having resistor and method of fabricating the...
- Patent number 7,402,871
- Issue date Jul 22, 2008
- Samsung Electronics Co., Ltd.
- Du-Heon Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor of a semiconductor device having a punchthrough protecti...
- Patent number 7,393,769
- Issue date Jul 1, 2008
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming asymmetric MOS transistor with a channel stopping...
- Patent number 7,378,320
- Issue date May 27, 2008
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having asymmetric channel region, semiconductor device i...
- Patent number 7,354,827
- Issue date Apr 8, 2008
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recess gate-type semiconductor device and method of manufacturing t...
- Patent number 7,323,746
- Issue date Jan 29, 2008
- Samsung Electronics Co., Ltd.
- Won-Mo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing recess type MOS transistor having a dual di...
- Patent number 7,300,845
- Issue date Nov 27, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates in FinFETs with trench insulation surrounding FIN p...
- Patent number 7,279,774
- Issue date Oct 9, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain transistor employing selective epitaxial gr...
- Patent number 7,221,023
- Issue date May 22, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating fin field effect transistor using isotropic e...
- Patent number 7,153,733
- Issue date Dec 26, 2006
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and fabrication method thereof using da...
- Patent number 7,034,368
- Issue date Apr 25, 2006
- Samsung Electronics Co., Ltd.
- Du-Heon Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and fabrication method thereof using da...
- Patent number 6,861,313
- Issue date Mar 1, 2005
- Samsung Electronics Co., Ltd.
- Du-Heon Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and fabrication method thereof using da...
- Patent number 6,844,233
- Issue date Jan 18, 2005
- Samsung Electronics Co., Ltd.
- Du-Heon Song
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS FOR CHANGING WELDING TIP
- Publication number 20150038306
- Publication date Feb 5, 2015
- Seung-Hae Lee
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
APPARATUS FOR INTERCHANGING WELDING TIPS OF SPOT WELDING GUN
- Publication number 20150020382
- Publication date Jan 22, 2015
- KOREA T&M CO., LTD.
- Seung-Hae Lee
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20120007165
- Publication date Jan 12, 2012
- SAMSUNG ELECTRONICS CO., LTD.
- Myoung-Bum LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20110318914
- Publication date Dec 29, 2011
- Samsung Electronics Co., Ltd.
- Yong-lack Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS OF SEMICONDUCTOR DEVICE HAVING CHANNEL REGION IN A CHAN...
- Publication number 20090114999
- Publication date May 7, 2009
- Samsung Electroncs Co., Ltd.
- Hyeoung-Won SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a semiconductor device and semiconductor devi...
- Publication number 20080029899
- Publication date Feb 7, 2008
- Du-heon Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE WITH CHANNEL FIN STRUCTURE AND METHO...
- Publication number 20070293011
- Publication date Dec 20, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE/DRAIN TRANSISTOR EMPLOYING SELECTIVE EPITAXIAL GR...
- Publication number 20070190734
- Publication date Aug 16, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING FIN FIELD EFFECT TRANSISTOR USING ISOTROPIC E...
- Publication number 20070077693
- Publication date Apr 5, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed-type field effect transistor with reduced body effect
- Publication number 20060234437
- Publication date Oct 19, 2006
- Dong-Hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having resistor and method of fabricating the...
- Publication number 20060118885
- Publication date Jun 8, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Du-Heon Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recess gate-type semiconductor device and method of manufacturing t...
- Publication number 20060060936
- Publication date Mar 23, 2006
- Won-Mo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device
- Publication number 20050272199
- Publication date Dec 8, 2005
- Dong-Hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having asymmetric channel region, semiconductor device i...
- Publication number 20050218434
- Publication date Oct 6, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating fin field effect transistor using isotropic e...
- Publication number 20050208715
- Publication date Sep 22, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor of a semiconductor device having a punchthrough protecti...
- Publication number 20050199930
- Publication date Sep 15, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors of semiconductor device having channel region in a chan...
- Publication number 20050194597
- Publication date Sep 8, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recess type MOS transistor and method of manufacturing same
- Publication number 20050196947
- Publication date Sep 8, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric source/drain transistor employing selective epitaxial gr...
- Publication number 20050191813
- Publication date Sep 1, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor device with channel fin structure and metho...
- Publication number 20050179030
- Publication date Aug 18, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed-type field effect transistor with reduced body effect
- Publication number 20050173744
- Publication date Aug 11, 2005
- Dong-Hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device and fabrication method thereof using da...
- Publication number 20050151274
- Publication date Jul 14, 2005
- Samsung Electronics Co., Ltd.
- Du-Heon Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric MOS transistor with trench-type gate
- Publication number 20050133836
- Publication date Jun 23, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device and fabrication method thereof using da...
- Publication number 20040007731
- Publication date Jan 15, 2004
- Du-Heon Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device and fabrication method thereof using da...
- Publication number 20040007727
- Publication date Jan 15, 2004
- Du-Heon Song
- H01 - BASIC ELECTRIC ELEMENTS

Du-Hyeon Song

Person

Patents Grantslast 30 patents

Apparatus for interchanging welding tips of spot welding gun

Apparatus for changing welding tip

Method of fabricating semiconductor device

Transistors of semiconductor device having channel region in a chan...

Recessed-type field effect transistor with reduced body effect

Asymmetric source/drain transistor employing selective epitaxial gr...

Transistors of semiconductor device having channel region in a chan...

Method of fabricating fin field effect transistor using isotropic e...

Semiconductor device having resistor and method of fabricating the...

Transistor of a semiconductor device having a punchthrough protecti...

Method of forming asymmetric MOS transistor with a channel stopping...

Transistor having asymmetric channel region, semiconductor device i...

Recess gate-type semiconductor device and method of manufacturing t...

Method of manufacturing recess type MOS transistor having a dual di...

Bulk substrates in FinFETs with trench insulation surrounding FIN p...

Asymmetric source/drain transistor employing selective epitaxial gr...

Method of fabricating fin field effect transistor using isotropic e...

Semiconductor memory device and fabrication method thereof using da...

Semiconductor memory device and fabrication method thereof using da...

Semiconductor memory device and fabrication method thereof using da...

Patents Applicationslast 30 patents

APPARATUS FOR CHANGING WELDING TIP

APPARATUS FOR INTERCHANGING WELDING TIPS OF SPOT WELDING GUN

SEMICONDUCTOR DEVICES

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

TRANSISTORS OF SEMICONDUCTOR DEVICE HAVING CHANNEL REGION IN A CHAN...

Method of fabricating a semiconductor device and semiconductor devi...

FIELD EFFECT TRANSISTOR DEVICE WITH CHANNEL FIN STRUCTURE AND METHO...

ASYMMETRIC SOURCE/DRAIN TRANSISTOR EMPLOYING SELECTIVE EPITAXIAL GR...

METHOD OF FABRICATING FIN FIELD EFFECT TRANSISTOR USING ISOTROPIC E...

Recessed-type field effect transistor with reduced body effect

Semiconductor device having resistor and method of fabricating the...

Recess gate-type semiconductor device and method of manufacturing t...

Method of manufacturing a semiconductor device

Transistor having asymmetric channel region, semiconductor device i...

Method of fabricating fin field effect transistor using isotropic e...

Transistor of a semiconductor device having a punchthrough protecti...

Transistors of semiconductor device having channel region in a chan...

Recess type MOS transistor and method of manufacturing same

Asymmetric source/drain transistor employing selective epitaxial gr...

Field effect transistor device with channel fin structure and metho...

Recessed-type field effect transistor with reduced body effect

Semiconductor memory device and fabrication method thereof using da...

Asymmetric MOS transistor with trench-type gate

Semiconductor memory device and fabrication method thereof using da...

Semiconductor memory device and fabrication method thereof using da...