Duofeng Yue

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Single photomask high precision thin film resistor
- Patent number 9,842,895
- Issue date Dec 12, 2017
- Texas Instruments Incorporated
- PingHai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single photomask high precision thin film resistor
- Patent number 9,305,688
- Issue date Apr 5, 2016
- Texas Instruments Incorporated
- PingHai Hao
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Nickel alloy silicide including indium and a method of manufacture...
- Patent number 7,511,350
- Issue date Mar 31, 2009
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having silicided re...
- Patent number 7,422,968
- Issue date Sep 9, 2008
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for implanter angle verification and calibration
- Patent number 7,397,046
- Issue date Jul 8, 2008
- Texas Instruments Incorporated
- Duofeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel silicide including indium and a method of manufacture therefor
- Patent number 7,355,255
- Issue date Apr 8, 2008
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel alloy silicide including indium and a method of manufacture...
- Patent number 7,344,985
- Issue date Mar 18, 2008
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance reduction by new barrier stack process
- Patent number 7,256,121
- Issue date Aug 14, 2007
- Texas Instruments Incorporated
- Duofeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel silicide including indium and a method of manufacture therefor
- Patent number 7,211,516
- Issue date May 1, 2007
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit metal silicide method
- Patent number 7,208,409
- Issue date Apr 24, 2007
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-halogen physical vapor deposition for semiconductor device de...
- Patent number 7,208,398
- Issue date Apr 24, 2007
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicide induced lateral excessive encroachment reduction by...
- Patent number 7,199,032
- Issue date Apr 3, 2007
- Texas Instruments Incorporated
- Duofeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide method for CMOS integrated circuits
- Patent number 7,029,967
- Issue date Apr 18, 2006
- Texas Instruments Incorporated
- Song Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR
- Publication number 20160197135
- Publication date Jul 7, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR
- Publication number 20140184381
- Publication date Jul 3, 2014
- TEXAS INSTRUMENTS INCORPORATED
- PingHai HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY PLASMA DIELECTRIC DESPOSITION FOR VOID FREE GAP FILL
- Publication number 20100041241
- Publication date Feb 18, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Joseph A. GALLEGOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR FORMED IN INTERLEVEL DIELECTRIC LAYER
- Publication number 20100032801
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Jarvis Benjamin Jacobs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel Alloy Silicide Including Indium and a Method of Manufacture...
- Publication number 20080128837
- Publication date Jun 5, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel silicide including indium and a method of manufacture therefor
- Publication number 20070141840
- Publication date Jun 21, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NICKEL ALLOY SILICIDE INCLUDING INDIUM AND A METHOD OF MANUFACTURE...
- Publication number 20070049022
- Publication date Mar 1, 2007
- Texas Instruments, Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel silicide including indium and a method of manufacture therefor
- Publication number 20060223295
- Publication date Oct 5, 2006
- Texas Instruments, Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for implanter angle verification and calibration
- Publication number 20060138355
- Publication date Jun 29, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Duofeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact resistance reduction by new barrier stack process
- Publication number 20060121724
- Publication date Jun 8, 2006
- Texas Instruments, Inc.
- Duofeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device having silicided re...
- Publication number 20060024882
- Publication date Feb 2, 2006
- Texas Instruments, Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing metal silicide excessive encroachment defects i...
- Publication number 20060024938
- Publication date Feb 2, 2006
- Texas Instruments, Incorporated
- Duofeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal silicide induced lateral excessive encroachment reduction by...
- Publication number 20060024935
- Publication date Feb 2, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Duofeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide method for CMOS integrated circuits
- Publication number 20060019478
- Publication date Jan 26, 2006
- Song Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-halogen physical vapor deposition for semiconductor device de...
- Publication number 20050208762
- Publication date Sep 22, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit metal silicide method
- Publication number 20050208764
- Publication date Sep 22, 2005
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS

Duofeng Yue

Person

Patents Grantslast 30 patents

Single photomask high precision thin film resistor

Single photomask high precision thin film resistor

Nickel alloy silicide including indium and a method of manufacture...

Method for manufacturing a semiconductor device having silicided re...

Method for implanter angle verification and calibration

Nickel silicide including indium and a method of manufacture therefor

Nickel alloy silicide including indium and a method of manufacture...

Contact resistance reduction by new barrier stack process

Nickel silicide including indium and a method of manufacture therefor

Integrated circuit metal silicide method

Metal-halogen physical vapor deposition for semiconductor device de...

Metal silicide induced lateral excessive encroachment reduction by...

Silicide method for CMOS integrated circuits

Patents Applicationslast 30 patents

SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR

SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR

HIGH DENSITY PLASMA DIELECTRIC DESPOSITION FOR VOID FREE GAP FILL

CAPACITOR FORMED IN INTERLEVEL DIELECTRIC LAYER

Nickel Alloy Silicide Including Indium and a Method of Manufacture...

Nickel silicide including indium and a method of manufacture therefor

NICKEL ALLOY SILICIDE INCLUDING INDIUM AND A METHOD OF MANUFACTURE...

Nickel silicide including indium and a method of manufacture therefor

Method for implanter angle verification and calibration

Contact resistance reduction by new barrier stack process

Method for manufacturing a semiconductor device having silicided re...

Method for reducing metal silicide excessive encroachment defects i...

Metal silicide induced lateral excessive encroachment reduction by...

Silicide method for CMOS integrated circuits

Metal-halogen physical vapor deposition for semiconductor device de...

Integrated circuit metal silicide method