D.V. Nirmal Ramaswamy

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
NAND unit cells
- Patent number 11,094,707
- Issue date Aug 17, 2021
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory sensing
- Patent number 10,699,784
- Issue date Jun 30, 2020
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structures including ferroelectric memory cells
- Patent number 9,698,343
- Issue date Jul 4, 2017
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structures
- Patent number 9,691,981
- Issue date Jun 27, 2017
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells having ferroelectric materials
- Patent number 9,053,801
- Issue date Jun 9, 2015
- Micron Technology, Inc.
- Gurtej S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Reactive metal implanted oxide based memory
- Patent number 9,042,155
- Issue date May 26, 2015
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells having regions containing one or both of carbon and boron
- Patent number 8,981,334
- Issue date Mar 17, 2015
- Micron Technology, Inc.
- Martin Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching in memory cells
- Patent number 8,951,829
- Issue date Feb 10, 2015
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Oxide based memory
- Patent number 8,796,656
- Issue date Aug 5, 2014
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Reactive metal implated oxide based memory
- Patent number 8,772,841
- Issue date Jul 8, 2014
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells
- Patent number 8,629,421
- Issue date Jan 14, 2014
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells and methods of storing information
- Patent number 8,514,626
- Issue date Aug 20, 2013
- Micron Technology, Inc.
- Gurtej S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic devices, memory devices and memory arrays
- Patent number 8,351,242
- Issue date Jan 8, 2013
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactive metal implated oxide based memory
- Patent number 8,313,996
- Issue date Nov 20, 2012
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Fortification of charge-storing material in high-K dielectric envir...
- Patent number 8,288,811
- Issue date Oct 16, 2012
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cells containing charge-trapping zones
- Patent number 8,228,743
- Issue date Jul 24, 2012
- Micron Technology, Inc.
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cells, methods of forming dielectric materials, and methods...
- Patent number 8,183,110
- Issue date May 22, 2012
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stacks and semiconductor constructions
- Patent number 8,169,032
- Issue date May 1, 2012
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate forming methods and integrated circuits
- Patent number 8,089,128
- Issue date Jan 3, 2012
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming nanoscale floating gate
- Patent number 8,017,481
- Issue date Sep 13, 2011
- Micron Technology, Inc.
- Gurtej S. Sandhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cells, methods of forming dielectric materials, and methods...
- Patent number 7,968,406
- Issue date Jun 28, 2011
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells, electronic systems, methods of forming memory cells,...
- Patent number 7,898,850
- Issue date Mar 1, 2011
- Micron Technology, Inc.
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor constructions
- Patent number 7,851,869
- Issue date Dec 14, 2010
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoscale floating gate and methods of formation
- Patent number 7,667,260
- Issue date Feb 23, 2010
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor constructions
- Patent number 7,544,559
- Issue date Jun 9, 2009
- Micron Technolog, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate forming methods and integrated circuits
- Patent number 7,538,001
- Issue date May 26, 2009
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20220102630
- Publication date Mar 31, 2022
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURES
- Publication number 20200343449
- Publication date Oct 29, 2020
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20200212299
- Publication date Jul 2, 2020
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Constructions
- Publication number 20180374870
- Publication date Dec 27, 2018
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20180350824
- Publication date Dec 6, 2018
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND Unit Cells
- Publication number 20180342534
- Publication date Nov 29, 2018
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
NAND Unit Cells
- Publication number 20180342535
- Publication date Nov 29, 2018
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY SENSING
- Publication number 20180342294
- Publication date Nov 29, 2018
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE BASED MEMORY
- Publication number 20180068723
- Publication date Mar 8, 2018
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME
- Publication number 20180006044
- Publication date Jan 4, 2018
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES HAVING A FERROELECTRIC FIELD-EFFECT TRANSISTOR MEMORY A...
- Publication number 20170358599
- Publication date Dec 14, 2017
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20170346007
- Publication date Nov 30, 2017
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDI...
- Publication number 20170309818
- Publication date Oct 26, 2017
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A FERROELECTRIC MEMORY CELL
- Publication number 20170186757
- Publication date Jun 29, 2017
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURES
- Publication number 20170148987
- Publication date May 25, 2017
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME
- Publication number 20170148512
- Publication date May 25, 2017
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING RESISTIVE MEMORY ELEMENTS
- Publication number 20170133587
- Publication date May 11, 2017
- Micron Technology, Inc.
- Christopher W. Petz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUSES HAVING A FERROELECTRIC FIELD-EFFECT TRANSISTOR MEMORY A...
- Publication number 20170098660
- Publication date Apr 6, 2017
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Constructions and NAND Unit Cells
- Publication number 20160336342
- Publication date Nov 17, 2016
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Constructions and NAND Unit Cells
- Publication number 20160118402
- Publication date Apr 28, 2016
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME
- Publication number 20160072044
- Publication date Mar 10, 2016
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDI...
- Publication number 20160064666
- Publication date Mar 3, 2016
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES INCLUDING FERROELECTRIC MEMORY CELLS
- Publication number 20160064655
- Publication date Mar 3, 2016
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Forming A Charge-Retaining Transistor
- Publication number 20150380432
- Publication date Dec 31, 2015
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20150380646
- Publication date Dec 31, 2015
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH RECESSED ELECTRODE CONTACTS
- Publication number 20150364683
- Publication date Dec 17, 2015
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ELEMENTS, RESISTIVE MEMORY CELLS, AND RESISTIVE ME...
- Publication number 20150333257
- Publication date Nov 19, 2015
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME
- Publication number 20150311217
- Publication date Oct 29, 2015
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY SENSING
- Publication number 20150255153
- Publication date Sep 10, 2015
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
Switching Components and Memory Units
- Publication number 20150236259
- Publication date Aug 20, 2015
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS

D.V. Nirmal Ramaswamy

Person

Patents Grantslast 30 patents

NAND unit cells

Resistive memory sensing

Semiconductor device structures including ferroelectric memory cells

Memory cell structures

Memory cells having ferroelectric materials

Reactive metal implanted oxide based memory

Memory cells having regions containing one or both of carbon and boron

Resistive switching in memory cells

Oxide based memory

Reactive metal implated oxide based memory

Memory cells

Memory cells and methods of storing information

Electronic devices, memory devices and memory arrays

Reactive metal implated oxide based memory

Fortification of charge-storing material in high-K dielectric envir...

Memory cells containing charge-trapping zones

Memory cells, methods of forming dielectric materials, and methods...

Gate stacks and semiconductor constructions

Transistor gate forming methods and integrated circuits

Methods of forming nanoscale floating gate

Memory cells, methods of forming dielectric materials, and methods...

Memory cells, electronic systems, methods of forming memory cells,...

Semiconductor constructions

Nanoscale floating gate and methods of formation

Methods of forming semiconductor constructions

Transistor gate forming methods and integrated circuits

Patents Applicationslast 30 patents

RESISTIVE MEMORY CELL

MEMORY CELL STRUCTURES

RESISTIVE MEMORY CELL

Semiconductor Constructions

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

NAND Unit Cells

NAND Unit Cells

RESISTIVE MEMORY SENSING

OXIDE BASED MEMORY

FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME

APPARATUSES HAVING A FERROELECTRIC FIELD-EFFECT TRANSISTOR MEMORY A...

RESISTIVE MEMORY CELL

MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDI...

METHODS OF FORMING A FERROELECTRIC MEMORY CELL

MEMORY CELL STRUCTURES

MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME

METHODS OF FORMING RESISTIVE MEMORY ELEMENTS

APPARATUSES HAVING A FERROELECTRIC FIELD-EFFECT TRANSISTOR MEMORY A...

Semiconductor Constructions and NAND Unit Cells

Semiconductor Constructions and NAND Unit Cells

MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME

MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDI...

SEMICONDUCTOR DEVICE STRUCTURES INCLUDING FERROELECTRIC MEMORY CELLS

Methods Of Forming A Charge-Retaining Transistor

RESISTIVE MEMORY CELL

MEMORY CELLS WITH RECESSED ELECTRODE CONTACTS

RESISTIVE MEMORY ELEMENTS, RESISTIVE MEMORY CELLS, AND RESISTIVE ME...

FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME

RESISTIVE MEMORY SENSING

Switching Components and Memory Units