Dzung Huu Nguyen

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
State change detection for two-terminal memory during application o...
- Patent number 9,659,642
- Issue date May 23, 2017
- Crossbar, Inc.
- Sang Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional memory control circuitry
- Patent number 9,620,229
- Issue date Apr 11, 2017
- Intel Corporation
- Mark Helm
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing operations in a memory device
- Patent number 9,423,969
- Issue date Aug 23, 2016
- Micron Technology, Inc.
- Jonathan Pabustan
- G11 - INFORMATION STORAGE
Information Patent Grant
Double data rate in parallel testing
- Patent number 9,293,224
- Issue date Mar 22, 2016
- Intel Corporation
- Dzung Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional memory control circuitry
- Patent number 9,202,536
- Issue date Dec 1, 2015
- Intel Corporation
- Mark Helm
- G11 - INFORMATION STORAGE
Information Patent Grant
Applying a voltage-delay correction to a non-defective memory block...
- Patent number 9,165,681
- Issue date Oct 20, 2015
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming operations in a memory device
- Patent number 9,123,423
- Issue date Sep 1, 2015
- Micron Technology, Inc.
- Jonathan Pabustan
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for reduced peak power consumption during comm...
- Patent number 8,854,885
- Issue date Oct 7, 2014
- Micron Technology, Inc.
- Dzung Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Access line dependent biasing schemes
- Patent number 8,730,734
- Issue date May 20, 2014
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Replacing defective memory blocks in response to external addresses
- Patent number 8,705,299
- Issue date Apr 22, 2014
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing operations in a memory device
- Patent number 8,611,156
- Issue date Dec 17, 2013
- Micron Technology, Inc.
- Jonathan Pabustan
- G11 - INFORMATION STORAGE
Information Patent Grant
Increased NAND flash memory read throughput
- Patent number 8,593,870
- Issue date Nov 26, 2013
- Round Rock Research, LLC
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming memory devices
- Patent number 8,520,436
- Issue date Aug 27, 2013
- Round Rock Research, LLC
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Replacing defective memory blocks in response to external addresses
- Patent number 8,446,787
- Issue date May 21, 2013
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for reduced peak power consumption during comm...
- Patent number 8,432,738
- Issue date Apr 30, 2013
- Micron Technology, Inc.
- Dzung Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase voltage reduction in a non-volatile memory device
- Patent number 8,391,080
- Issue date Mar 5, 2013
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Access line dependent biasing schemes
- Patent number 8,358,540
- Issue date Jan 22, 2013
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Replacing defective columns of memory cells in response to external...
- Patent number 8,295,109
- Issue date Oct 23, 2012
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing operations in a memory device
- Patent number 8,243,523
- Issue date Aug 14, 2012
- Micron Technology, Inc.
- Jonathan Pabustan
- G11 - INFORMATION STORAGE
Information Patent Grant
Increased NAND flash memory read throughput
- Patent number 8,174,892
- Issue date May 8, 2012
- Round Rock Research, LLC
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming memory devices
- Patent number 8,174,889
- Issue date May 8, 2012
- Round Rock Research, LLC
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of erase verification for a flash memory device
- Patent number 8,169,832
- Issue date May 1, 2012
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase voltage reduction in a non-volatile memory device
- Patent number 8,064,267
- Issue date Nov 22, 2011
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Increased NAND flash memory read throughput
- Patent number 7,903,463
- Issue date Mar 8, 2011
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Replacing defective columns of memory cells in response to external...
- Patent number 7,881,134
- Issue date Feb 1, 2011
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of erase verification for a flash memory device
- Patent number 7,835,190
- Issue date Nov 16, 2010
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for reduced peak power consumption during comm...
- Patent number 7,701,764
- Issue date Apr 20, 2010
- Micron Technology, Inc.
- Dzung Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming memory devices
- Patent number 7,688,630
- Issue date Mar 30, 2010
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Increased NAND flash memory read throughput
- Patent number 7,525,842
- Issue date Apr 28, 2009
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming memory devices
- Patent number 7,505,323
- Issue date Mar 17, 2009
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
THREE DIMENSIONAL MEMORY CONTROL CIRCUITRY
- Publication number 20160196879
- Publication date Jul 7, 2016
- MARK HELM
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING OPERATIONS IN A MEMORY DEVICE
- Publication number 20150355849
- Publication date Dec 10, 2015
- Micron Technology, Inc.
- Jonathan Pabustan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
APPLYING A VOLTAGE-DELAY CORRECTION TO A NON-DEFECTIVE MEMORY BLOCK...
- Publication number 20140204693
- Publication date Jul 24, 2014
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONAL MEMORY CONTROL CIRCUITRY
- Publication number 20140146612
- Publication date May 29, 2014
- Mark Helm
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING OPERATIONS IN A MEMORY DEVICE
- Publication number 20140104956
- Publication date Apr 17, 2014
- Micron Technology, Inc.
- Jonathan Pabustan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
APPARATUS AND METHOD FOR REDUCED PEAK POWER CONSUMPTION DURING COMM...
- Publication number 20130308388
- Publication date Nov 21, 2013
- Micron Technology, Inc.
- Dzung Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES
- Publication number 20130250707
- Publication date Sep 26, 2013
- Micron Technology, Inc.
- Sarin Vishal
- G11 - INFORMATION STORAGE
Information Patent Application
ACCESS LINE DEPENDENT BIASING SCHEMES
- Publication number 20130135935
- Publication date May 30, 2013
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING OPERATIONS IN A MEMORY DEVICE
- Publication number 20120281480
- Publication date Nov 8, 2012
- Micron Technology, Inc.
- Jonathan Pabustan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMING MEMORY DEVICES
- Publication number 20120221779
- Publication date Aug 30, 2012
- ROUND ROCK RESEARCH, LLC
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
INCREASED NAND FLASH MEMORY READ THROUGHPUT
- Publication number 20120221780
- Publication date Aug 30, 2012
- ROUND ROCK RESEARCH, LLC
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE VOLTAGE REDUCTION IN A NON-VOLATILE MEMORY DEVICE
- Publication number 20120033504
- Publication date Feb 9, 2012
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING OPERATIONS IN A MEMORY DEVICE
- Publication number 20110222353
- Publication date Sep 15, 2011
- Micron Technology, Inc.
- Jonathan Pabustan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ACCESS LINE DEPENDENT BIASING SCHEMES
- Publication number 20110170353
- Publication date Jul 14, 2011
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
INCREASED NAND FLASH MEMORY READ THROUGHPUT
- Publication number 20110161591
- Publication date Jun 30, 2011
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
REPLACING DEFECTIVE COLUMNS OF MEMORY CELLS IN RESPONSE TO EXTERNAL...
- Publication number 20110122717
- Publication date May 26, 2011
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF ERASE VERIFICATION FOR A FLASH MEMORY DEVICE
- Publication number 20110032761
- Publication date Feb 10, 2011
- Micron Technology Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD FOR REDUCED PEAK POWER CONSUMPTION DURING COMM...
- Publication number 20100157683
- Publication date Jun 24, 2010
- Dzung Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING MEMORY DEVICES
- Publication number 20100142280
- Publication date Jun 10, 2010
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
REPLACING DEFECTIVE COLUMNS OF MEMORY CELLS IN RESPONSE TO EXTERNAL...
- Publication number 20100124132
- Publication date May 20, 2010
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE VOLTAGE REDUCTION IN A NON-VOLATILE MEMORY DEVICE
- Publication number 20100124126
- Publication date May 20, 2010
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES
- Publication number 20100124133
- Publication date May 20, 2010
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF ERASE VERIFICATION FOR A FLASH MEMORY DEVICE
- Publication number 20100039864
- Publication date Feb 18, 2010
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
INCREASED NAND FLASH MEMORY READ THROUGHPUT
- Publication number 20090201736
- Publication date Aug 13, 2009
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING MEMORY DEVICES
- Publication number 20090154247
- Publication date Jun 18, 2009
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
Increased NAND flash memory read throughput
- Publication number 20080181003
- Publication date Jul 31, 2008
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING MEMORY DEVICES
- Publication number 20080130373
- Publication date Jun 5, 2008
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatus and method for reduced peak power consumption during comm...
- Publication number 20070279988
- Publication date Dec 6, 2007
- Micron Technology, Inc.
- Dzung Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
Programming memory devices
- Publication number 20070047326
- Publication date Mar 1, 2007
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
Programming memory devices
- Publication number 20060256620
- Publication date Nov 16, 2006
- Micron Technology, Inc.
- Dzung H. Nguyen
- G11 - INFORMATION STORAGE

Dzung Huu Nguyen

Person

Patents Grantslast 30 patents

State change detection for two-terminal memory during application o...

Three dimensional memory control circuitry

Sensing operations in a memory device

Double data rate in parallel testing

Three dimensional memory control circuitry

Applying a voltage-delay correction to a non-defective memory block...

Programming operations in a memory device

Apparatus and method for reduced peak power consumption during comm...

Access line dependent biasing schemes

Replacing defective memory blocks in response to external addresses

Sensing operations in a memory device

Increased NAND flash memory read throughput

Programming memory devices

Replacing defective memory blocks in response to external addresses

Apparatus and method for reduced peak power consumption during comm...

Erase voltage reduction in a non-volatile memory device

Access line dependent biasing schemes

Replacing defective columns of memory cells in response to external...

Sensing operations in a memory device

Increased NAND flash memory read throughput

Programming memory devices

Methods of erase verification for a flash memory device

Erase voltage reduction in a non-volatile memory device

Increased NAND flash memory read throughput

Replacing defective columns of memory cells in response to external...

Methods of erase verification for a flash memory device

Apparatus and method for reduced peak power consumption during comm...

Programming memory devices

Increased NAND flash memory read throughput

Programming memory devices

Patents Applicationslast 30 patents

THREE DIMENSIONAL MEMORY CONTROL CIRCUITRY

SENSING OPERATIONS IN A MEMORY DEVICE

APPLYING A VOLTAGE-DELAY CORRECTION TO A NON-DEFECTIVE MEMORY BLOCK...

THREE DIMENSIONAL MEMORY CONTROL CIRCUITRY

SENSING OPERATIONS IN A MEMORY DEVICE

APPARATUS AND METHOD FOR REDUCED PEAK POWER CONSUMPTION DURING COMM...

REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES

ACCESS LINE DEPENDENT BIASING SCHEMES

SENSING OPERATIONS IN A MEMORY DEVICE

PROGRAMMING MEMORY DEVICES

INCREASED NAND FLASH MEMORY READ THROUGHPUT

ERASE VOLTAGE REDUCTION IN A NON-VOLATILE MEMORY DEVICE

SENSING OPERATIONS IN A MEMORY DEVICE

ACCESS LINE DEPENDENT BIASING SCHEMES

INCREASED NAND FLASH MEMORY READ THROUGHPUT

REPLACING DEFECTIVE COLUMNS OF MEMORY CELLS IN RESPONSE TO EXTERNAL...

METHODS OF ERASE VERIFICATION FOR A FLASH MEMORY DEVICE

APPARATUS AND METHOD FOR REDUCED PEAK POWER CONSUMPTION DURING COMM...

PROGRAMMING MEMORY DEVICES

REPLACING DEFECTIVE COLUMNS OF MEMORY CELLS IN RESPONSE TO EXTERNAL...

ERASE VOLTAGE REDUCTION IN A NON-VOLATILE MEMORY DEVICE

REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES

METHODS OF ERASE VERIFICATION FOR A FLASH MEMORY DEVICE

INCREASED NAND FLASH MEMORY READ THROUGHPUT

PROGRAMMING MEMORY DEVICES

Increased NAND flash memory read throughput

PROGRAMMING MEMORY DEVICES

Apparatus and method for reduced peak power consumption during comm...

Programming memory devices

Programming memory devices