Edmond R. Ward

Person

Monte Sereno, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 9,831,425
- Issue date Nov 28, 2017
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 9,806,130
- Issue date Oct 31, 2017
- Unity Semiconductor Corporation
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 9,570,515
- Issue date Feb 14, 2017
- Unity Semiconductor Corporation
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 9,159,408
- Issue date Oct 13, 2015
- Unity Semiconductor Corporation
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 9,159,913
- Issue date Oct 13, 2015
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 8,675,389
- Issue date Mar 18, 2014
- Unity Semiconductor Corporation
- Christophe Chevallier
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating multi-resistive state memory devices
- Patent number 8,611,130
- Issue date Dec 17, 2013
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating multi-resistive state memory devices
- Patent number 8,062,942
- Issue date Nov 22, 2011
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory using variable tunnel barrier widths
- Patent number 7,985,963
- Issue date Jul 26, 2011
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-resistive state memory device with conductive oxide electrodes
- Patent number 7,889,539
- Issue date Feb 15, 2011
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Selection device for re-writable memory
- Patent number 7,884,349
- Issue date Feb 8, 2011
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-resistive state memory device with conductive oxide electrodes
- Patent number 7,633,790
- Issue date Dec 15, 2009
- Unity Semiconductor Corporation
- Darrel Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory using variable tunnel barrier widths
- Patent number 7,538,338
- Issue date May 26, 2009
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-resistive state element with reactive metal
- Patent number 7,394,679
- Issue date Jul 1, 2008
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhanced functionality in a two-terminal memory array
- Patent number 7,330,370
- Issue date Feb 12, 2008
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device with a treated interface
- Patent number 7,326,979
- Issue date Feb 5, 2008
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
High-density NVRAM
- Patent number 7,180,772
- Issue date Feb 20, 2007
- Unity Semicondutor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Re-writable memory with multiple memory layers
- Patent number 7,095,643
- Issue date Aug 22, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-resistive state element with reactive metal
- Patent number 7,082,052
- Issue date Jul 25, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Layout of driver sets in a cross point memory array
- Patent number 7,079,442
- Issue date Jul 18, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-resistive state material that uses dopants
- Patent number 7,071,008
- Issue date Jul 4, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive memory device with conductive oxide electrodes
- Patent number 7,067,862
- Issue date Jun 27, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross point memory array with fast access time
- Patent number 7,057,914
- Issue date Jun 6, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with high temperature wiring
- Patent number 7,042,035
- Issue date May 9, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
2-terminal trapped charge memory device with voltage switchable mul...
- Patent number 7,038,935
- Issue date May 2, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of uniformly coating a substrate
- Patent number 7,030,039
- Issue date Apr 18, 2006
- ASML Holding N.V.
- Emir Gurer
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Method of uniformly coating a substrate
- Patent number 7,018,943
- Issue date Mar 28, 2006
- ASML Holding N.V.
- Gurer Emir
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Cross point array using distinct voltages
- Patent number 7,020,012
- Issue date Mar 28, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Line drivers that use minimal metal layers
- Patent number 7,009,909
- Issue date Mar 7, 2006
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of uniformly coating a substrate
- Patent number 6,977,098
- Issue date Dec 20, 2005
- ASML Holding N.V.
- Emir Gurer
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...

Patents Applicationslast 30 patents

Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20180130946
- Publication date May 10, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20180122857
- Publication date May 3, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20170179197
- Publication date Jun 22, 2017
- UNITY SEMICONDUCTOR CORPORATION
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20160005793
- Publication date Jan 7, 2016
- UNITY SEMICONDUCTOR CORPORATION
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20150380642
- Publication date Dec 31, 2015
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20150029780
- Publication date Jan 29, 2015
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Element With a Reactive Metal Layer
- Publication number 20140211542
- Publication date Jul 31, 2014
- UNITY SEMICONDUCTOR CORPORATION
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Application
Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
- Publication number 20120087174
- Publication date Apr 12, 2012
- UNITY SEMICONDUCTOR CORPORATION
- DARRELL RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method For Fabricating Multi Resistive State Memory Devices
- Publication number 20120064691
- Publication date Mar 15, 2012
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Element With A Reactive Metal Layer
- Publication number 20120033481
- Publication date Feb 9, 2012
- UNITY SEMICONDUCTOR CORPORATION
- DARRELL RINERSON
- G11 - INFORMATION STORAGE
Information Patent Application
TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY E...
- Publication number 20110278532
- Publication date Nov 17, 2011
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-resistive state memory device with conductive oxide electrodes
- Publication number 20110186803
- Publication date Aug 4, 2011
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-resistive state memory device with conductive oxide electrodes
- Publication number 20100157657
- Publication date Jun 24, 2010
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Two-Terminal Reversibly Switchable Memory Device
- Publication number 20090303772
- Publication date Dec 10, 2009
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Multi-terminal reversibly switchable memory device
- Publication number 20090303773
- Publication date Dec 10, 2009
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Memory using variable tunnel barrier widths
- Publication number 20090231906
- Publication date Sep 17, 2009
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-resistive state memory device with conductive oxide electrodes
- Publication number 20090045390
- Publication date Feb 19, 2009
- UNITY SEMICONDUCTOR CORPORATION
- Darrel Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Selection device for Re-Writable memory
- Publication number 20090016094
- Publication date Jan 15, 2009
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Method for fabricating multi-resistive state memory devices
- Publication number 20080293196
- Publication date Nov 27, 2008
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Conductive memory stack with sidewall
- Publication number 20070158716
- Publication date Jul 12, 2007
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-resistive state element with reactive metal
- Publication number 20060245243
- Publication date Nov 2, 2006
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Memory using mixed valence conductive oxides
- Publication number 20060171200
- Publication date Aug 3, 2006
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Memory using variable tunnel barrier widths
- Publication number 20060050598
- Publication date Mar 9, 2006
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Memory element having islands
- Publication number 20060028864
- Publication date Feb 9, 2006
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
High-density NVRAM
- Publication number 20060023495
- Publication date Feb 2, 2006
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Re-writable memory with multiple memory layers
- Publication number 20050231992
- Publication date Oct 20, 2005
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-resistive state element with reactive metal
- Publication number 20050174835
- Publication date Aug 11, 2005
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Cross point array using distinct voltages
- Publication number 20050111263
- Publication date May 26, 2005
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE MEMORY STACK WITH NON-UNIFORM WIDTH
- Publication number 20050101086
- Publication date May 12, 2005
- UNITY SEMICONDUCTOR INC.
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple modes of operation in a cross point array
- Publication number 20050013172
- Publication date Jan 20, 2005
- Darrell Rinerson
- G11 - INFORMATION STORAGE

Edmond R. Ward

Person

Patents Grantslast 30 patents

Two-terminal reversibly switchable memory device

Memory element with a reactive metal layer

Memory element with a reactive metal layer

Memory element with a reactive metal layer

Two-terminal reversibly switchable memory device

Memory element with a reactive metal layer

Method for fabricating multi-resistive state memory devices

Method for fabricating multi-resistive state memory devices

Memory using variable tunnel barrier widths

Multi-resistive state memory device with conductive oxide electrodes

Selection device for re-writable memory

Multi-resistive state memory device with conductive oxide electrodes

Memory using variable tunnel barrier widths

Multi-resistive state element with reactive metal

Enhanced functionality in a two-terminal memory array

Resistive memory device with a treated interface

High-density NVRAM

Re-writable memory with multiple memory layers

Multi-resistive state element with reactive metal

Layout of driver sets in a cross point memory array

Multi-resistive state material that uses dopants

Conductive memory device with conductive oxide electrodes

Cross point memory array with fast access time

Memory array with high temperature wiring

2-terminal trapped charge memory device with voltage switchable mul...

Method of uniformly coating a substrate

Method of uniformly coating a substrate

Cross point array using distinct voltages

Line drivers that use minimal metal layers

Method of uniformly coating a substrate

Patents Applicationslast 30 patents

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

Memory Element With a Reactive Metal Layer

Two Terminal Re Writeable Non Volatile Ion Transport Memory Device

Method For Fabricating Multi Resistive State Memory Devices

Memory Element With A Reactive Metal Layer

TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY E...

Multi-resistive state memory device with conductive oxide electrodes

Multi-resistive state memory device with conductive oxide electrodes

Two-Terminal Reversibly Switchable Memory Device

Multi-terminal reversibly switchable memory device

Memory using variable tunnel barrier widths

Multi-resistive state memory device with conductive oxide electrodes

Selection device for Re-Writable memory

Method for fabricating multi-resistive state memory devices

Conductive memory stack with sidewall

Multi-resistive state element with reactive metal

Memory using mixed valence conductive oxides

Memory using variable tunnel barrier widths

Memory element having islands

High-density NVRAM

Re-writable memory with multiple memory layers

Multi-resistive state element with reactive metal

Cross point array using distinct voltages

CONDUCTIVE MEMORY STACK WITH NON-UNIFORM WIDTH

Multiple modes of operation in a cross point array