Edward A. Beam III

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistor (HEMT) device
- Patent number 10,734,512
- Issue date Aug 4, 2020
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) device
- Patent number 10,636,881
- Issue date Apr 28, 2020
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) device
- Patent number 10,593,764
- Issue date Mar 17, 2020
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 10,559,665
- Issue date Feb 11, 2020
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 10,290,713
- Issue date May 14, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Continuous crystalline gallium nitride (GaN) PN structure with no i...
- Patent number 10,177,247
- Issue date Jan 8, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high thermal conductivity substrate and p...
- Patent number 10,090,172
- Issue date Oct 2, 2018
- Qorvo US, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high thermal conductivity substrate and p...
- Patent number 10,037,899
- Issue date Jul 31, 2018
- Qorvo US, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double heterojunction field effect transistor with polarization com...
- Patent number 9,972,708
- Issue date May 15, 2018
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) device and method of makin...
- Patent number 9,865,721
- Issue date Jan 9, 2018
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped gallium nitride high-electron mobility transistor
- Patent number 9,640,650
- Issue date May 2, 2017
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride on high thermal conductivity material device and me...
- Patent number 9,337,278
- Issue date May 10, 2016
- TriQuint Semiconductor, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital alloy layer in a III-nitrade based heterojunction field eff...
- Patent number 9,202,905
- Issue date Dec 1, 2015
- TriQuint Semiconductor, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride-based transistor with gate dielectric including a...
- Patent number 9,029,914
- Issue date May 12, 2015
- TriQuint Semiconductor, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride transistor using a regrown structure
- Patent number 8,975,664
- Issue date Mar 10, 2015
- TriQuint Semiconductor, Inc.
- Paul A. Saunier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrown Schottky structures for GAN HEMT devices
- Patent number 8,778,747
- Issue date Jul 15, 2014
- TriQuint Semiconductor, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure including high-thermal-conductivity substrate
- Patent number 8,350,295
- Issue date Jan 8, 2013
- TriQuint Semiconductor, Inc.
- Paul Saunier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure field effect transistor
- Patent number 6,787,826
- Issue date Sep 7, 2004
- TriQuint Semiconductor, Inc.
- Hua Quen Tserng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Long wavelength laser diodes on metamorphic buffer modified gallium...
- Patent number 6,697,412
- Issue date Feb 24, 2004
- TriQuint Semiconductor, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCEMENT-MODE GaN HFET
- Publication number 20230290834
- Publication date Sep 14, 2023
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) INCLUDING A YTTRIUM (Y)...
- Publication number 20230223467
- Publication date Jul 13, 2023
- Qorvo US, Inc.
- Edward Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOLECULAR BEAM EPITAXY (MBE) REACTORS AND METHODS FOR n+GaN REGROWTH
- Publication number 20230135911
- Publication date May 4, 2023
- Qorvo US, Inc.
- Edward A. Beam
- C30 - CRYSTAL GROWTH
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20190267452
- Publication date Aug 29, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE
- Publication number 20190237570
- Publication date Aug 1, 2019
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20190035895
- Publication date Jan 31, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO I...
- Publication number 20180212045
- Publication date Jul 26, 2018
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE AND METHOD OF MAKIN...
- Publication number 20170365700
- Publication date Dec 21, 2017
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE
- Publication number 20170294529
- Publication date Oct 12, 2017
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE HETEROJUNCTION FIELD EFFECT TRANSISTOR WITH POLARIZATION COM...
- Publication number 20170278958
- Publication date Sep 28, 2017
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH THERMAL CONDUCTIVITY SUBSTRATE AND P...
- Publication number 20170133295
- Publication date May 11, 2017
- Qorvo US, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH THERMAL CONDUCTIVITY SUBSTRATE AND P...
- Publication number 20170133239
- Publication date May 11, 2017
- Qorvo US, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR
- Publication number 20150200287
- Publication date Jul 16, 2015
- TriQuint Semiconductor, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE-BASED TRANSISTOR WITH GATE DIELECTRIC INCLUDING A...
- Publication number 20140145243
- Publication date May 29, 2014
- TriQuint Semiconductor, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE TRANSISTOR USING A REGROWN STRUCTURE
- Publication number 20140001478
- Publication date Jan 2, 2014
- TriQuint Semiconductor, Inc.
- Paul Saunier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE STRUCTURE INCLUDING HIGH-THERMAL-CONDUCTIVITY SUBSTRATE
- Publication number 20130119404
- Publication date May 16, 2013
- TriQuint Semiconductor, Inc.
- Paul Saunier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Increased responsivity photodetector
- Publication number 20050012030
- Publication date Jan 20, 2005
- TriQuint Semiconductor, Inc.
- Aaditya Mahajan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
HETEROSTRUCTURE FIELD EFFECT TRANSISTOR
- Publication number 20040178422
- Publication date Sep 16, 2004
- TriQuint Semiconductor, Inc.
- Hua Quen Tserng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Long wavelength laser diodes on metamorphic buffer modified gallium...
- Publication number 20020150137
- Publication date Oct 17, 2002
- Edward A. Beam
- B82 - NANO-TECHNOLOGY

Edward A. Beam III

Person

Patents Grantslast 30 patents

High electron mobility transistor (HEMT) device

High electron mobility transistor (HEMT) device

High electron mobility transistor (HEMT) device

Field-effect transistor

Field-effect transistor

Continuous crystalline gallium nitride (GaN) PN structure with no i...

Semiconductor device with high thermal conductivity substrate and p...

Semiconductor device with high thermal conductivity substrate and p...

Double heterojunction field effect transistor with polarization com...

High electron mobility transistor (HEMT) device and method of makin...

Doped gallium nitride high-electron mobility transistor

Gallium nitride on high thermal conductivity material device and me...

Digital alloy layer in a III-nitrade based heterojunction field eff...

Group III-nitride-based transistor with gate dielectric including a...

Group III-nitride transistor using a regrown structure

Regrown Schottky structures for GAN HEMT devices

Device structure including high-thermal-conductivity substrate

Heterostructure field effect transistor

Long wavelength laser diodes on metamorphic buffer modified gallium...

Patents Applicationslast 30 patents

ENHANCEMENT-MODE GaN HFET

HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) INCLUDING A YTTRIUM (Y)...

MOLECULAR BEAM EPITAXY (MBE) REACTORS AND METHODS FOR n+GaN REGROWTH

FIELD-EFFECT TRANSISTOR

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE

FIELD-EFFECT TRANSISTOR

CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO I...

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE AND METHOD OF MAKIN...

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE

DOUBLE HETEROJUNCTION FIELD EFFECT TRANSISTOR WITH POLARIZATION COM...

SEMICONDUCTOR DEVICE WITH HIGH THERMAL CONDUCTIVITY SUBSTRATE AND P...

SEMICONDUCTOR DEVICE WITH HIGH THERMAL CONDUCTIVITY SUBSTRATE AND P...

DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR

GROUP III-NITRIDE-BASED TRANSISTOR WITH GATE DIELECTRIC INCLUDING A...

GROUP III-NITRIDE TRANSISTOR USING A REGROWN STRUCTURE

DEVICE STRUCTURE INCLUDING HIGH-THERMAL-CONDUCTIVITY SUBSTRATE

Increased responsivity photodetector

HETEROSTRUCTURE FIELD EFFECT TRANSISTOR

Long wavelength laser diodes on metamorphic buffer modified gallium...