Edward J. Nowak

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation region fabrication for replacement gate processing
- Patent number RE50181
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Brent A. Anderson
Information Patent Grant
Isolation region fabrication for replacement gate processing
- Patent number RE48616
- Issue date Jun 29, 2021
- Samsung Electronics Co., Ltd.
- Brent A. Anderson
Information Patent Grant
Vertical field effect transistors
- Patent number 11,024,546
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor channel having vertically stacked nanosheets coupled by...
- Patent number 10,957,799
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors
- Patent number 10,943,831
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuromorphic circuit structure and method to form same
- Patent number 10,909,443
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Edward J. Nowak
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fabrication of a vertical field effect transistor device with a mod...
- Patent number 10,903,361
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor channel having vertically stacked nanosheets coupled by...
- Patent number 10,903,369
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors
- Patent number 10,896,857
- Issue date Jan 19, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned via forming to conductive line and related wiring stru...
- Patent number 10,879,112
- Issue date Dec 29, 2020
- GLOBALFOUNDRIES Inc.
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified memory cells based on fully-depleted silicon-on-insulato...
- Patent number 10,727,253
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable gate lengths for vertical transistors
- Patent number 10,714,396
- Issue date Jul 14, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET having a gate structure in a trench feature in a bent fin
- Patent number 10,714,616
- Issue date Jul 14, 2020
- GLOBALFOUNDRIES Inc.
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation techniques for high-voltage device structures
- Patent number 10,699,961
- Issue date Jun 30, 2020
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual drain for decreased harmonic generation in fully depleted S...
- Patent number 10,658,390
- Issue date May 19, 2020
- GLOBALFOUNDRIES Inc.
- Edward J. Nowak
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Devices with channel extension regions
- Patent number 10,636,876
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Lars Müller-Meskamp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sloped finFET with methods of forming same
- Patent number 10,629,703
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a vertical field effect transistor device with a mod...
- Patent number 10,622,477
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a planar field effect transistor (FET) with a vertical FET
- Patent number 10,573,562
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors
- Patent number 10,529,627
- Issue date Jan 7, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a planar field effect transistor (FET) with a vertical FET
- Patent number 10,424,516
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors incorporating U-shaped semiconduc...
- Patent number 10,418,484
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable gate lengths for vertical transistors
- Patent number 10,395,992
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with H-shaped or U-shaped channels and method for formi...
- Patent number 10,381,459
- Issue date Aug 13, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic layout with reduced area and method of making the same
- Patent number 10,373,942
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Ram Asra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET structure
- Patent number 10,347,759
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors
- Patent number 10,332,801
- Issue date Jun 25, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid gate-all-around (GAA) field effect transistor (FET) structur...
- Patent number 10,332,803
- Issue date Jun 25, 2019
- GLOBALFOUNDARIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sloped finFET with methods of forming same
- Patent number 10,312,347
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a vertical field effect transistor device with a mod...
- Patent number 10,304,955
- Issue date May 28, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NEUROMORPHIC CIRCUIT STRUCTURE AND METHOD TO FORM SAME
- Publication number 20200272880
- Publication date Aug 27, 2020
- GLOBALFOUNDRIES INC.
- Edward J. Nowak
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRANSISTOR CHANNEL HAVING VERTICALLY STACKED NANOSHEETS COUPLED BY...
- Publication number 20200274000
- Publication date Aug 27, 2020
- International Business Machines Corporation
- RUILONG XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CHANNEL HAVING VERTICALLY STACKED NANOSHEETS COUPLED BY...
- Publication number 20200273979
- Publication date Aug 27, 2020
- International Business Machines Corporation
- RUILONG XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMPLIFIED MEMORY CELLS BASED ON FULLY-DEPLETED SILICON-ON-INSULATO...
- Publication number 20200251498
- Publication date Aug 6, 2020
- GLOBALFOUNDRIES INC.
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A VERTICAL FIELD EFFECT TRANSISTOR DEVICE WITH A MOD...
- Publication number 20200203527
- Publication date Jun 25, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTORS
- Publication number 20200075425
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTORS
- Publication number 20200075424
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH CHANNEL EXTENSION REGIONS
- Publication number 20200035788
- Publication date Jan 30, 2020
- GLOBALFOUNDRIES INC.
- Lars MÜLLER-MESKAMP
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIRTUAL DRAIN FOR DECREASED HARMONIC GENERATION IN FULLY DEPLETED S...
- Publication number 20200020721
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Edward J. NOWAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION TECHNIQUES FOR HIGH-VOLTAGE DEVICE STRUCTURES
- Publication number 20200013679
- Publication date Jan 9, 2020
- GLOBALFOUNDRIES INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A PLANAR FIELD EFFECT TRANSISTOR (FET) WITH A VERTICAL FET
- Publication number 20190326179
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE GATE LENGTHS FOR VERTICAL TRANSISTORS
- Publication number 20190318965
- Publication date Oct 17, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTORS INCORPORATING U-SHAPED SEMICONDUC...
- Publication number 20190287863
- Publication date Sep 19, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTORS
- Publication number 20190267291
- Publication date Aug 29, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A VERTICAL FIELD EFFECT TRANSISTOR DEVICE WITH A MOD...
- Publication number 20190221668
- Publication date Jul 18, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...
- Publication number 20190214482
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC LAYOUT WITH REDUCED AREA AND METHOD OF MAKING THE SAME
- Publication number 20190172822
- Publication date Jun 6, 2019
- GLOBALFOUNDRIES INC.
- Ram ASRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE, GATE ALL-AROUND INTEGRATED CIRCUIT ST...
- Publication number 20190074224
- Publication date Mar 7, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A VERTICAL FIELD EFFECT TRANSISTOR DEVICE WITH A MOD...
- Publication number 20190027599
- Publication date Jan 24, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTORS
- Publication number 20180374758
- Publication date Dec 27, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTORS
- Publication number 20180277443
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE GATE LENGTHS FOR VERTICAL TRANSISTORS
- Publication number 20180277444
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FINFET WITH SELF-ALIGNED GATE
- Publication number 20180254340
- Publication date Sep 6, 2018
- GLOBALFOUNDRIES INC.
- EDWARD J. NOWAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FET STRUCTURE
- Publication number 20180248037
- Publication date Aug 30, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A VERTICAL FIELD EFFECT TRANSISTOR DEVICE WITH A MOD...
- Publication number 20180240907
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A PLANAR FIELD EFFECT TRANSISTOR (FET) WITH A VERTICAL FET
- Publication number 20180218948
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED VIA FORMING TO CONDUCTIVE LINE AND RELATED WIRING STRU...
- Publication number 20180211871
- Publication date Jul 26, 2018
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTORS AND METHODS OF FORMING SAME
- Publication number 20180175025
- Publication date Jun 21, 2018
- GLOBALFOUNDRIES INC.
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SLOPED FINFET WITH METHODS OF FORMING SAME
- Publication number 20180158924
- Publication date Jun 7, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SLOPED FINFET WITH METHODS OF FORMING SAME
- Publication number 20180138286
- Publication date May 17, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS

Edward J. Nowak

Person

Patents Grantslast 30 patents

Isolation region fabrication for replacement gate processing

Isolation region fabrication for replacement gate processing

Vertical field effect transistors

Transistor channel having vertically stacked nanosheets coupled by...

Vertical field effect transistors

Neuromorphic circuit structure and method to form same

Fabrication of a vertical field effect transistor device with a mod...

Transistor channel having vertically stacked nanosheets coupled by...

Vertical field effect transistors

Self-aligned via forming to conductive line and related wiring stru...

Simplified memory cells based on fully-depleted silicon-on-insulato...

Variable gate lengths for vertical transistors

FINFET having a gate structure in a trench feature in a bent fin

Isolation techniques for high-voltage device structures

Virtual drain for decreased harmonic generation in fully depleted S...

Devices with channel extension regions

Sloped finFET with methods of forming same

Fabrication of a vertical field effect transistor device with a mod...

Integrating a planar field effect transistor (FET) with a vertical FET

Vertical field effect transistors

Integrating a planar field effect transistor (FET) with a vertical FET

Vertical field effect transistors incorporating U-shaped semiconduc...

Variable gate lengths for vertical transistors

Transistors with H-shaped or U-shaped channels and method for formi...

Logic layout with reduced area and method of making the same

Vertical FET structure

Vertical field effect transistors

Hybrid gate-all-around (GAA) field effect transistor (FET) structur...

Sloped finFET with methods of forming same

Fabrication of a vertical field effect transistor device with a mod...

Patents Applicationslast 30 patents

NEUROMORPHIC CIRCUIT STRUCTURE AND METHOD TO FORM SAME

TRANSISTOR CHANNEL HAVING VERTICALLY STACKED NANOSHEETS COUPLED BY...

TRANSISTOR CHANNEL HAVING VERTICALLY STACKED NANOSHEETS COUPLED BY...

SIMPLIFIED MEMORY CELLS BASED ON FULLY-DEPLETED SILICON-ON-INSULATO...

FABRICATION OF A VERTICAL FIELD EFFECT TRANSISTOR DEVICE WITH A MOD...

VERTICAL FIELD EFFECT TRANSISTORS

VERTICAL FIELD EFFECT TRANSISTORS

DEVICES WITH CHANNEL EXTENSION REGIONS

VIRTUAL DRAIN FOR DECREASED HARMONIC GENERATION IN FULLY DEPLETED S...

ISOLATION TECHNIQUES FOR HIGH-VOLTAGE DEVICE STRUCTURES

INTEGRATING A PLANAR FIELD EFFECT TRANSISTOR (FET) WITH A VERTICAL FET

VARIABLE GATE LENGTHS FOR VERTICAL TRANSISTORS

VERTICAL FIELD EFFECT TRANSISTORS INCORPORATING U-SHAPED SEMICONDUC...

VERTICAL FIELD EFFECT TRANSISTORS

FABRICATION OF A VERTICAL FIELD EFFECT TRANSISTOR DEVICE WITH A MOD...

TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...

LOGIC LAYOUT WITH REDUCED AREA AND METHOD OF MAKING THE SAME

INTEGRATED CIRCUIT STRUCTURE, GATE ALL-AROUND INTEGRATED CIRCUIT ST...

FABRICATION OF A VERTICAL FIELD EFFECT TRANSISTOR DEVICE WITH A MOD...

VERTICAL FIELD EFFECT TRANSISTORS

VERTICAL FIELD EFFECT TRANSISTORS

VARIABLE GATE LENGTHS FOR VERTICAL TRANSISTORS

TUNNEL FINFET WITH SELF-ALIGNED GATE

VERTICAL FET STRUCTURE

FABRICATION OF A VERTICAL FIELD EFFECT TRANSISTOR DEVICE WITH A MOD...

INTEGRATING A PLANAR FIELD EFFECT TRANSISTOR (FET) WITH A VERTICAL FET

SELF-ALIGNED VIA FORMING TO CONDUCTIVE LINE AND RELATED WIRING STRU...

VERTICAL TRANSISTORS AND METHODS OF FORMING SAME

SLOPED FINFET WITH METHODS OF FORMING SAME

SLOPED FINFET WITH METHODS OF FORMING SAME