El Mehdi Bazizi

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gradient doping epitaxy in superjunction to improve breakdown voltage
- Patent number 12,074,196
- Issue date Aug 27, 2024
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET for FDSOI devices
- Patent number 11,929,433
- Issue date Mar 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ignasi Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming alignment marks
- Patent number 11,899,376
- Issue date Feb 13, 2024
- Applied Materials, Inc.
- Prayudi Lianto
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Graded doping in power devices
- Patent number 11,705,490
- Issue date Jul 18, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress incorporation in semiconductor devices
- Patent number 11,699,755
- Issue date Jul 11, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully self-aligned via
- Patent number 11,437,274
- Issue date Sep 6, 2022
- Micromaterials LLC
- Regina Freed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET for FDSOI devices
- Patent number 11,245,032
- Issue date Feb 8, 2022
- GLOBALFOUNDRIES U.S. INC.
- Ignasi Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped through-contact structures
- Patent number 11,145,726
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Sushant Mittal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally double diffused metal oxide semiconductor (LDMOS) device...
- Patent number 10,930,777
- Issue date Feb 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method employing three-dimensional (3D) emulation of in-...
- Patent number 10,733,354
- Issue date Aug 4, 2020
- GLOBALFOUNDRIES Inc.
- Hojin Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field-effect transistors with a grown silicon-germanium channel
- Patent number 10,680,065
- Issue date Jun 9, 2020
- GlobalFoundries Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted silicon on insulator (FDSOI) lateral double-diffused...
- Patent number 10,497,803
- Issue date Dec 3, 2019
- GLOBALFOUNDRIES Inc.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF REDUCING BACKSIDE CONTACT RESISTANCE
- Publication number 20240332388
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Byeong Chan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT SOURCE/DRAIN CONTACT METHOD IN COMPLEMENTARY FIELD EFFE...
- Publication number 20240332297
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Ashish PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES CONTAINING BI-METALLIC SILICIDE WITH REDUCED...
- Publication number 20240313079
- Publication date Sep 19, 2024
- Applied Materials, Inc.
- Sefa Dag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOID-FREE STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20240290883
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20240290884
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- El Mehdi Bazizi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED MOBILITY IN SEMICONDUCTOR DEVICES
- Publication number 20240290885
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE TRANSISTOR WITH CHANNEL COUNTER-DOPING AND POCKET-D...
- Publication number 20240258375
- Publication date Aug 1, 2024
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE
- Publication number 20240234544
- Publication date Jul 11, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE
- Publication number 20240234531
- Publication date Jul 11, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER INNER SPACER FOR GATE-ALL-AROUND DEVICE
- Publication number 20240194757
- Publication date Jun 13, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING ALIGNMENT MARKS
- Publication number 20240069448
- Publication date Feb 29, 2024
- Applied Materials, Inc.
- Prayudi LIANTO
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
INTEGRATING STRAIN SiGe CHANNEL PMOS FOR GAA CMOS TECHNOLOGY
- Publication number 20240014214
- Publication date Jan 11, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20230299199
- Publication date Sep 21, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND BACKSIDE POWER RAIL WITH DIFFUSION BREAK
- Publication number 20230260909
- Publication date Aug 17, 2023
- Applied Materials, Inc.
- Andrew Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACK...
- Publication number 20230260908
- Publication date Aug 17, 2023
- Applied Materials, Inc.
- Andrew Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTOR ARCHITECTURE WITH FILL-IN DIELECTRIC MAT...
- Publication number 20230170400
- Publication date Jun 1, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER RAIL TO DEEP VIAS
- Publication number 20230068312
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED WIDE BACKSIDE POWER RAIL CONTACTS TO MULTIPLE TRANSIST...
- Publication number 20230064183
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE DRAIN FORMATION IN GATE ALL AROUND TRANSISTOR
- Publication number 20230067331
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ULTRA THINNING OF WAFER
- Publication number 20230061392
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADIENT DOPING EPITAXY IN SUPERJUNCTION TO IMPROVE BREAKDOWN VOLTAGE
- Publication number 20230008858
- Publication date Jan 12, 2023
- Applied Materials, Inc.
- Ashish PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY SELF-ALIGNED VIA
- Publication number 20220359289
- Publication date Nov 10, 2022
- Micromaterials LLC.
- Regina Freed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED DOPING IN POWER DEVICES
- Publication number 20220254886
- Publication date Aug 11, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND DEVICE WITH FULLY-DEPLETED SILICON-ON-INSULATOR
- Publication number 20220246742
- Publication date Aug 4, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET FOR FDSOI DEVICES
- Publication number 20220069125
- Publication date Mar 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- IGNASI CORTES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20220059698
- Publication date Feb 24, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED THROUGH-CONTACT STRUCTURES
- Publication number 20210119002
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Sushant Mittal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Self-Aligned Via
- Publication number 20210090952
- Publication date Mar 25, 2021
- Micromaterials LLC.
- Regina Freed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET FOR FDSOI DEVICES
- Publication number 20200321466
- Publication date Oct 8, 2020
- GLOBALFOUNDRIES INC.
- IGNASI CORTES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN SYSTEM AND METHOD EMPLOYING THREE-DIMENSIONAL (3D) EMULATION...
- Publication number 20200201955
- Publication date Jun 25, 2020
- Hojin Kim
- G06 - COMPUTING CALCULATING COUNTING

El Mehdi Bazizi

Person

Patents Grantslast 30 patents

Gradient doping epitaxy in superjunction to improve breakdown voltage

Asymmetric FET for FDSOI devices

Methods for forming alignment marks

Graded doping in power devices

Stress incorporation in semiconductor devices

Fully self-aligned via

Asymmetric FET for FDSOI devices

Doped through-contact structures

Laterally double diffused metal oxide semiconductor (LDMOS) device...

System and method employing three-dimensional (3D) emulation of in-...

Field-effect transistors with a grown silicon-germanium channel

Fully depleted silicon on insulator (FDSOI) lateral double-diffused...

Patents Applicationslast 30 patents

METHODS OF REDUCING BACKSIDE CONTACT RESISTANCE

REPLACEMENT SOURCE/DRAIN CONTACT METHOD IN COMPLEMENTARY FIELD EFFE...

SEMICONDUCTOR DEVICES CONTAINING BI-METALLIC SILICIDE WITH REDUCED...

VOID-FREE STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

ENHANCED MOBILITY IN SEMICONDUCTOR DEVICES

SILICON CARBIDE TRANSISTOR WITH CHANNEL COUNTER-DOPING AND POCKET-D...

INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE

INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE

MULTILAYER INNER SPACER FOR GATE-ALL-AROUND DEVICE

METHODS FOR FORMING ALIGNMENT MARKS

INTEGRATING STRAIN SiGe CHANNEL PMOS FOR GAA CMOS TECHNOLOGY

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

GATE ALL AROUND BACKSIDE POWER RAIL WITH DIFFUSION BREAK

GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACK...

GATE ALL AROUND TRANSISTOR ARCHITECTURE WITH FILL-IN DIELECTRIC MAT...

BACKSIDE POWER RAIL TO DEEP VIAS

SELF-ALIGNED WIDE BACKSIDE POWER RAIL CONTACTS TO MULTIPLE TRANSIST...

SOURCE DRAIN FORMATION IN GATE ALL AROUND TRANSISTOR

METHOD OF ULTRA THINNING OF WAFER

GRADIENT DOPING EPITAXY IN SUPERJUNCTION TO IMPROVE BREAKDOWN VOLTAGE

FULLY SELF-ALIGNED VIA

GRADED DOPING IN POWER DEVICES

GATE ALL AROUND DEVICE WITH FULLY-DEPLETED SILICON-ON-INSULATOR

ASYMMETRIC FET FOR FDSOI DEVICES

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

DOPED THROUGH-CONTACT STRUCTURES

Fully Self-Aligned Via

ASYMMETRIC FET FOR FDSOI DEVICES

DESIGN SYSTEM AND METHOD EMPLOYING THREE-DIMENSIONAL (3D) EMULATION...