Elgin Kiok Boone Quek

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
OTP-MTP on FDSOI architecture and method for producing the same
- Patent number 11,646,360
- Issue date May 9, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with lower resistance and improved breakdown and method for...
- Patent number 11,355,599
- Issue date Jun 7, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a thyristor-based random access memory using fin...
- Patent number 11,094,696
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector-resistive random access memory cell
- Patent number 10,804,323
- Issue date Oct 13, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xuan Anh Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with magnetic random access memory (MRAM) devic...
- Patent number 10,797,223
- Issue date Oct 6, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bin Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Devices with lower resistance and improved breakdown and method for...
- Patent number 10,790,366
- Issue date Sep 29, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
OTP-MTP on FDSOI architecture and method for producing the same
- Patent number 10,720,513
- Issue date Jul 21, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-time programmable device
- Patent number 10,643,725
- Issue date May 5, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ping Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Compact OTP/MTP memory device including a cavity formed between a s...
- Patent number 10,559,691
- Issue date Feb 11, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate capacitance-matching FET and related device
- Patent number 10,522,614
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongtian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor with stacked SPAD and method for producing the same
- Patent number 10,424,568
- Issue date Sep 24, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kian Ming Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin selector with gated RRAM
- Patent number 10,424,732
- Issue date Sep 24, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction element
- Patent number 10,388,852
- Issue date Aug 20, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ping Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device
- Patent number 10,333,065
- Issue date Jun 25, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical random access memory with selectors
- Patent number 10,186,554
- Issue date Jan 22, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a compact OTP/MTP technology
- Patent number 10,170,625
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector-resistive random access memory cell
- Patent number 10,163,979
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xuan Anh Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI STT-MRAM design
- Patent number 10,121,959
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yinjie Ding
- G11 - INFORMATION STORAGE
Information Patent Grant
LDMOS with improved breakdown voltage and with non-uniformed gate d...
- Patent number 10,032,902
- Issue date Jul 24, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form thicker erase gate poly superflash NVM
- Patent number 10,020,372
- Issue date Jul 10, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Khee Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Corner transistor suppression
- Patent number 9,905,642
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact RRAM structure with contact-less unit cell
- Patent number 9,847,377
- Issue date Dec 19, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin selector with gated RRAM
- Patent number 9,825,223
- Issue date Nov 21, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device
- Patent number 9,728,721
- Issue date Aug 8, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures with spin torque transfer magnetic ra...
- Patent number 9,673,388
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STT-MRAM bitcell for embedded flash applications
- Patent number 9,653,137
- Issue date May 16, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile resistive random access memory crossbar devices with m...
- Patent number 9,647,035
- Issue date May 9, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xuan Anh Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with isolation
- Patent number 9,620,642
- Issue date Apr 11, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drive current enhancement for integrated circuit memory structures
- Patent number 9,583,168
- Issue date Feb 28, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jacob Chenchen Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit structures with spin torque transfer magnetic ra...
- Patent number 9,484,530
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICES WITH LOWER RESISTANCE AND IMPROVED BREAKDOWN AND METHOD FOR...
- Publication number 20200381521
- Publication date Dec 3, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OTP-MTP ON FDSOI ARCHITECTURE AND METHOD FOR PRODUCING THE SAME
- Publication number 20200295161
- Publication date Sep 17, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OTP-MTP ON FDSOI ARCHITECTURE AND METHOD FOR PRODUCING THE SAME
- Publication number 20190280108
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FABRICATE CAPACITANCE-MATCHING FET AND RELATED DEVICE
- Publication number 20190267446
- Publication date Aug 29, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yongtian HOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVIC...
- Publication number 20190237658
- Publication date Aug 1, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH LOWER RESISTANCE AND IMPROVED BREAKDOWN AND METHOD FOR...
- Publication number 20190229193
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR-RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20190148454
- Publication date May 16, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xuan Anh TRAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR RANDOM ACCESS MEMORY
- Publication number 20190115350
- Publication date Apr 18, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING COMPACT OTP/MTP TECHNOLOGY
- Publication number 20190088783
- Publication date Mar 21, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT OTP/MTP TECHNOLOGY
- Publication number 20180212058
- Publication date Jul 26, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIME PROGRAMMABLE DEVICE
- Publication number 20180102178
- Publication date Apr 12, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ping ZHENG
- G11 - INFORMATION STORAGE
Information Patent Application
FIN SELECTOR WITH GATED RRAM
- Publication number 20180033963
- Publication date Feb 1, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE
- Publication number 20170358744
- Publication date Dec 14, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT
- Publication number 20170358734
- Publication date Dec 14, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ping ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STT-MRAM Bitcell for Embedded Flash Applications
- Publication number 20160300604
- Publication date Oct 13, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kangho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL RANDOM ACCESS MEMORY WITH SELECTORS
- Publication number 20160293665
- Publication date Oct 6, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT RRAM STRUCTURE WITH CONTACT-LESS UNIT CELL
- Publication number 20160247857
- Publication date Aug 25, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORNER TRANSISTOR SUPPRESSION
- Publication number 20160240611
- Publication date Aug 18, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SELF-ADJUSTING THRESHOLD VOLTAGE
- Publication number 20160181440
- Publication date Jun 23, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH SPIN TORQUE TRANSFER MAGNETIC RA...
- Publication number 20160133669
- Publication date May 12, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH SPIN TORQUE TRANSFER MAGNETIC RA...
- Publication number 20160111629
- Publication date Apr 21, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATED FLASH MEMORY
- Publication number 20160093630
- Publication date Mar 31, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng (Jason) Tan
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE RESISTIVE RANDOM ACCESS MEMORY CROSSBAR DEVICES WITH M...
- Publication number 20160087197
- Publication date Mar 24, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xuan Anh Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR-RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20160079310
- Publication date Mar 17, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xuan Anh TRAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH FINFET NONVOLATILE MEMORY
- Publication number 20160064398
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH STRESSORS
- Publication number 20160035873
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE
- Publication number 20160028009
- Publication date Jan 28, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL RANDOM ACCESS MEMORY WITH SELECTORS
- Publication number 20150333103
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR RANDOM ACCESS MEMORY
- Publication number 20150333068
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH IMPROVED BREAKDOWN VOLTAGE
- Publication number 20150325697
- Publication date Nov 12, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS

Elgin Kiok Boone Quek

Person

Patents Grantslast 30 patents

OTP-MTP on FDSOI architecture and method for producing the same

Devices with lower resistance and improved breakdown and method for...

Methods of forming a thyristor-based random access memory using fin...

Selector-resistive random access memory cell

Integrated circuits with magnetic random access memory (MRAM) devic...

Devices with lower resistance and improved breakdown and method for...

OTP-MTP on FDSOI architecture and method for producing the same

Multi-time programmable device

Compact OTP/MTP memory device including a cavity formed between a s...

Method to fabricate capacitance-matching FET and related device

Image sensor with stacked SPAD and method for producing the same

Fin selector with gated RRAM

Magnetic tunnel junction element

Resistive memory device

Vertical random access memory with selectors

Method for manufacturing a compact OTP/MTP technology

Selector-resistive random access memory cell

FDSOI STT-MRAM design

LDMOS with improved breakdown voltage and with non-uniformed gate d...

Method to form thicker erase gate poly superflash NVM

Corner transistor suppression

Compact RRAM structure with contact-less unit cell

Fin selector with gated RRAM

Resistive memory device

Integrated circuit structures with spin torque transfer magnetic ra...

STT-MRAM bitcell for embedded flash applications

Non-volatile resistive random access memory crossbar devices with m...

FinFET with isolation

Drive current enhancement for integrated circuit memory structures

Integrated circuit structures with spin torque transfer magnetic ra...

Patents Applicationslast 30 patents

DEVICES WITH LOWER RESISTANCE AND IMPROVED BREAKDOWN AND METHOD FOR...

OTP-MTP ON FDSOI ARCHITECTURE AND METHOD FOR PRODUCING THE SAME

OTP-MTP ON FDSOI ARCHITECTURE AND METHOD FOR PRODUCING THE SAME

METHOD TO FABRICATE CAPACITANCE-MATCHING FET AND RELATED DEVICE

INTEGRATED CIRCUITS WITH MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVIC...

DEVICES WITH LOWER RESISTANCE AND IMPROVED BREAKDOWN AND METHOD FOR...

SELECTOR-RESISTIVE RANDOM ACCESS MEMORY CELL

THYRISTOR RANDOM ACCESS MEMORY

METHOD FOR MANUFACTURING COMPACT OTP/MTP TECHNOLOGY

COMPACT OTP/MTP TECHNOLOGY

MULTI-TIME PROGRAMMABLE DEVICE

FIN SELECTOR WITH GATED RRAM

RESISTIVE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION ELEMENT

STT-MRAM Bitcell for Embedded Flash Applications

VERTICAL RANDOM ACCESS MEMORY WITH SELECTORS

COMPACT RRAM STRUCTURE WITH CONTACT-LESS UNIT CELL

CORNER TRANSISTOR SUPPRESSION

FIELD EFFECT TRANSISTOR WITH SELF-ADJUSTING THRESHOLD VOLTAGE

INTEGRATED CIRCUIT STRUCTURES WITH SPIN TORQUE TRANSFER MAGNETIC RA...

INTEGRATED CIRCUIT STRUCTURES WITH SPIN TORQUE TRANSFER MAGNETIC RA...

DOUBLE GATED FLASH MEMORY

NON-VOLATILE RESISTIVE RANDOM ACCESS MEMORY CROSSBAR DEVICES WITH M...

SELECTOR-RESISTIVE RANDOM ACCESS MEMORY CELL

INTEGRATED CIRCUITS WITH FINFET NONVOLATILE MEMORY

FINFET WITH STRESSORS

RESISTIVE MEMORY DEVICE

VERTICAL RANDOM ACCESS MEMORY WITH SELECTORS

THYRISTOR RANDOM ACCESS MEMORY

LDMOS WITH IMPROVED BREAKDOWN VOLTAGE