Ercan Adem

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thin film germanium diode with low reverse breakdown
- Patent number 7,468,296
- Issue date Dec 23, 2008
- Spansion LLC
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preamorphization to minimize void formation
- Patent number 7,361,586
- Issue date Apr 22, 2008
- Spansion LLC
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ultra-low energy ion implantation to form alloy layers in...
- Patent number 7,115,498
- Issue date Oct 3, 2006
- Advanced Micro Devices, Inc.
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a selective barrier layer using a sacrificial layer
- Patent number 6,869,878
- Issue date Mar 22, 2005
- Advanced Micro Devices, Inc.
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming wiring by implantation of seed layer material
- Patent number 6,770,559
- Issue date Aug 3, 2004
- Advanced Micro Devices, Inc.
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for determining an etch endpoint
- Patent number 6,641,747
- Issue date Nov 4, 2003
- Advanced Micro Devices, Inc.
- Todd P. Lukanc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nickel silicide using a one-step rapid thermal an...
- Patent number 6,605,513
- Issue date Aug 12, 2003
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a low dielectric constant material
- Patent number 6,583,070
- Issue date Jun 24, 2003
- Advanced Micro Devices, Inc.
- Ting Y. Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming fully silicided gates
- Patent number 6,562,718
- Issue date May 13, 2003
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HDP treatment for reduced nickel silicide bridging
- Patent number 6,521,529
- Issue date Feb 18, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for non-feature-size dependent cu-alloy introduc...
- Patent number 6,518,185
- Issue date Feb 11, 2003
- Advanced Micro Devices, Inc.
- Pin-Chin Connie Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving adhesion of capping layers to cooper interconnects
- Patent number 6,383,925
- Issue date May 7, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack structure for variable threshold voltage
- Patent number 6,281,559
- Issue date Aug 28, 2001
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a low dielectric constant material
- Patent number 6,208,030
- Issue date Mar 27, 2001
- Advanced Micro Devices, Inc.
- Ting Y. Tsui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Preamorphization to minimize void formation
- Publication number 20070020919
- Publication date Jan 25, 2007
- Spansion LLC
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial inlay process for improved integration of porous interl...
- Publication number 20030219968
- Publication date Nov 27, 2003
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING NICKEL SILICIDE USING A ONE-STEP RAPID THERMAL AN...
- Publication number 20020068408
- Publication date Jun 6, 2002
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Thin film germanium diode with low reverse breakdown

Preamorphization to minimize void formation

Method of ultra-low energy ion implantation to form alloy layers in...

Method of forming a selective barrier layer using a sacrificial layer

Method of forming wiring by implantation of seed layer material

Method and apparatus for determining an etch endpoint

Method of forming nickel silicide using a one-step rapid thermal an...

Semiconductor device having a low dielectric constant material

Process for forming fully silicided gates

HDP treatment for reduced nickel silicide bridging

Integration scheme for non-feature-size dependent cu-alloy introduc...

Method of improving adhesion of capping layers to cooper interconnects

Gate stack structure for variable threshold voltage

Semiconductor device having a low dielectric constant material

Patents Applicationslast 30 patents

Preamorphization to minimize void formation

Sacrificial inlay process for improved integration of porous interl...

METHOD OF FORMING NICKEL SILICIDE USING A ONE-STEP RAPID THERMAL AN...