Erwin Hammerl

Person

Stromville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride cap formation in a DRAM trench capacitor
- Patent number 5,937,292
- Issue date Aug 10, 1999
- International Business Machines Corporation
- Erwin Hammerl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a titanium resistor
- Patent number 5,899,724
- Issue date May 4, 1999
- International Business Machines Corporation
- David Mark Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried strap formation in a DRAM trench capacitor
- Patent number 5,844,266
- Issue date Dec 1, 1998
- Siemens Aktiengesellschaft
- Reinhard Stengl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-strap formation in a dram trench capacitor
- Patent number 5,827,765
- Issue date Oct 27, 1998
- Siemens Aktiengesellschaft
- Reinhard Stengl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic component and process for its production
- Patent number 5,828,076
- Issue date Oct 27, 1998
- Siemens Aktiengesellschaft
- Harald Gossner
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow...
- Patent number 5,747,866
- Issue date May 5, 1998
- Siemens Aktiengesellschaft
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride cap formation in a DRAM trench capacitor
- Patent number 5,717,628
- Issue date Feb 10, 1998
- Siemens Aktiengesellschaft
- Erwin Hammerl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled recrystallization of buried strap in a semiconductor mem...
- Patent number 5,670,805
- Issue date Sep 23, 1997
- Kabushiki Kaisha Toshiba
- Erwin Hammerl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage node process for deep trench-based DRAM
- Patent number 5,656,535
- Issue date Aug 12, 1997
- Siemens Aktiengesellschaft
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow...
- Patent number 5,643,823
- Issue date Jul 1, 1997
- Siemens Aktiengesellschaft
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled recrystallization of buried strap in a semiconductor mem...
- Patent number 5,543,348
- Issue date Aug 6, 1996
- Kabushiki Kaisha Toshiba
- Erwin Hammerl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation with thin nitride liner
- Patent number 5,447,884
- Issue date Sep 5, 1995
- International Business Machines Corporation
- Paul M. Fahey
- H01 - BASIC ELECTRIC ELEMENTS

Erwin Hammerl

Person

Patents Grantslast 30 patents

Nitride cap formation in a DRAM trench capacitor

Method for fabricating a titanium resistor

Buried strap formation in a DRAM trench capacitor

Buried-strap formation in a dram trench capacitor

Microelectronic component and process for its production

Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow...

Nitride cap formation in a DRAM trench capacitor

Controlled recrystallization of buried strap in a semiconductor mem...

Storage node process for deep trench-based DRAM

Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow...

Controlled recrystallization of buried strap in a semiconductor mem...

Shallow trench isolation with thin nitride liner