Erwin J. Prinz

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for simulating long-term performance of a non-volatile memor...
- Patent number 7,955,877
- Issue date Jun 7, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Mohammed Suhail
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate memory cell and method therefor
- Patent number 7,732,278
- Issue date Jun 8, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided nonvolatile memory and method of making same
- Patent number 7,700,439
- Issue date Apr 20, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanocrystal bitcell process integration for high density application
- Patent number 7,491,600
- Issue date Feb 17, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate memory cell and method therefor
- Patent number 7,456,465
- Issue date Nov 25, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for process integration of non-volatile memory cell transist...
- Patent number 7,439,134
- Issue date Oct 21, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication process for integrating formation of embe...
- Patent number 7,364,969
- Issue date Apr 29, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a non-volatile memory and a peripheral device on...
- Patent number 7,341,914
- Issue date Mar 11, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate storage device including a horizontal first gate and a v...
- Patent number 7,211,858
- Issue date May 1, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of discharging a semiconductor device
- Patent number 7,160,775
- Issue date Jan 9, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with nanoclusters
- Patent number 6,958,265
- Issue date Oct 25, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Robert F. Steimle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming of a memory with discrete charge storage elements
- Patent number 6,898,128
- Issue date May 24, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase of a memory having a non-conductive storage medium
- Patent number 6,898,129
- Issue date May 24, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Grant
Split-gate thin-film storage NVM cell
- Patent number 6,828,618
- Issue date Dec 7, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory and method of making same
- Patent number 6,816,414
- Issue date Nov 9, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Grant
Program and erase in a thin film storage non-volatile memory
- Patent number 6,791,883
- Issue date Sep 14, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate voltage reduction in a memory read
- Patent number 6,751,125
- Issue date Jun 15, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of operating it
- Patent number 6,295,229
- Issue date Sep 25, 2001
- Motorola Inc.
- Kuo-Tung Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming an integrated circuit
- Patent number 6,133,093
- Issue date Oct 17, 2000
- Motorola, Inc.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of building an EPROM cell without drain disturb and reduced...
- Patent number 5,981,340
- Issue date Nov 9, 1999
- Motorola, Inc.
- Kuo-Tung Chang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING A METAL OXIDE METAL (MOM) CAPACITOR AND...
- Publication number 20170053930
- Publication date Feb 23, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ERWIN J. PRINZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROVIDING A NON-VOLATILE MEMORY
- Publication number 20100240156
- Publication date Sep 23, 2010
- Mohammed Suhail
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT GATE MEMORY CELL AND METHOD THEREFOR
- Publication number 20090042349
- Publication date Feb 12, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PROCESS INTEGRATION OF NON-VOLATILE MEMORY CELL TRANSIST...
- Publication number 20080261367
- Publication date Oct 23, 2008
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a non-volatile memory and a peripheral device on...
- Publication number 20070218631
- Publication date Sep 20, 2007
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicided nonvolatile memory and method of making same
- Publication number 20070218633
- Publication date Sep 20, 2007
- Erwin J. Prinz
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanocrystal bitcell process integration for high density application
- Publication number 20070105306
- Publication date May 10, 2007
- Freescale Semiconductor, Inc.
- Erwin J. Prinz
- B82 - NANO-TECHNOLOGY
Information Patent Application
Split gate memory cell and method therefor
- Publication number 20070077705
- Publication date Apr 5, 2007
- Erwin J. Prinz
- B82 - NANO-TECHNOLOGY
Information Patent Application
Split gate storage device including a horizontal first gate and a v...
- Publication number 20070018207
- Publication date Jan 25, 2007
- Freescale Semiconductor, Inc.
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor fabrication process for integrating formation of embe...
- Publication number 20070004146
- Publication date Jan 4, 2007
- Freescale Semiconductor, Inc.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Virtual ground memory array and method therefor
- Publication number 20060076604
- Publication date Apr 13, 2006
- Erwin J. Prinz
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of discharging a semiconductor device
- Publication number 20060030105
- Publication date Feb 9, 2006
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device with nanoclusters
- Publication number 20050059213
- Publication date Mar 17, 2005
- Robert F. Steimle
- B82 - NANO-TECHNOLOGY
Information Patent Application
PROGRAMMING OF A MEMORY WITH DISCRETE CHARGE STORAGE ELEMENTS
- Publication number 20050013173
- Publication date Jan 20, 2005
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Application
Split-gate thin-film storage NVM cell
- Publication number 20040084710
- Publication date May 6, 2004
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Application
GATE VOLTAGE REDUCTION IN A MEMORY READ
- Publication number 20040085815
- Publication date May 6, 2004
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Application
Erase of a memory having a non-conductive storage medium
- Publication number 20040080984
- Publication date Apr 29, 2004
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Application
Program and erase in a thin film storage non-volatile memory
- Publication number 20030235083
- Publication date Dec 25, 2003
- Craig T. Swift
- G11 - INFORMATION STORAGE

Erwin J. Prinz

Person

Patents Grantslast 30 patents

Method for simulating long-term performance of a non-volatile memor...

Split gate memory cell and method therefor

Silicided nonvolatile memory and method of making same

Nanocrystal bitcell process integration for high density application

Split gate memory cell and method therefor

Method for process integration of non-volatile memory cell transist...

Semiconductor fabrication process for integrating formation of embe...

Method for forming a non-volatile memory and a peripheral device on...

Split gate storage device including a horizontal first gate and a v...

Method of discharging a semiconductor device

Semiconductor device with nanoclusters

Programming of a memory with discrete charge storage elements

Erase of a memory having a non-conductive storage medium

Split-gate thin-film storage NVM cell

Nonvolatile memory and method of making same

Program and erase in a thin film storage non-volatile memory

Gate voltage reduction in a memory read

Semiconductor device and method of operating it

Method for forming an integrated circuit

Method of building an EPROM cell without drain disturb and reduced...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING A METAL OXIDE METAL (MOM) CAPACITOR AND...

METHOD FOR PROVIDING A NON-VOLATILE MEMORY

SPLIT GATE MEMORY CELL AND METHOD THEREFOR

METHOD FOR PROCESS INTEGRATION OF NON-VOLATILE MEMORY CELL TRANSIST...

Method for forming a non-volatile memory and a peripheral device on...

Silicided nonvolatile memory and method of making same

Nanocrystal bitcell process integration for high density application

Split gate memory cell and method therefor

Split gate storage device including a horizontal first gate and a v...

Semiconductor fabrication process for integrating formation of embe...

Virtual ground memory array and method therefor

Method of discharging a semiconductor device

Semiconductor device with nanoclusters

PROGRAMMING OF A MEMORY WITH DISCRETE CHARGE STORAGE ELEMENTS

Split-gate thin-film storage NVM cell

GATE VOLTAGE REDUCTION IN A MEMORY READ

Erase of a memory having a non-conductive storage medium

Program and erase in a thin film storage non-volatile memory