Etsuo Morita

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Crystal film, crystal substrate, and semiconductor device
- Patent number 8,741,451
- Issue date Jun 3, 2014
- Sony Corporation
- Etsuo Morita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal firm, crystal substrate, and semiconductor device
- Patent number 7,727,331
- Issue date Jun 1, 2010
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal film, crystal substrate, and semiconductor device
- Patent number 7,364,805
- Issue date Apr 29, 2008
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing crystal of III-V compound of the nitride sy...
- Patent number 7,294,201
- Issue date Nov 13, 2007
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing crystal of III-V compound of the nitride sy...
- Patent number 7,244,308
- Issue date Jul 17, 2007
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of crystallizing a nitride III-V compound semiconductor laye...
- Patent number 7,125,736
- Issue date Oct 24, 2006
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of crystallizing a nitride III-V compound semiconductor laye...
- Patent number 7,033,854
- Issue date Apr 25, 2006
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and fabrication method thereof
- Patent number 6,967,353
- Issue date Nov 22, 2005
- Sony Corporation
- Jun Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE S...
- Patent number 6,727,523
- Issue date Apr 27, 2004
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate made of a nitride III-V compound semiconduc...
- Patent number 6,501,154
- Issue date Dec 31, 2002
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE S...
- Patent number 6,498,048
- Issue date Dec 24, 2002
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device on a sapphire substrate
- Patent number 6,232,623
- Issue date May 15, 2001
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 6,121,636
- Issue date Sep 19, 2000
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacture of cleaved light emitting semiconductor device
- Patent number 6,107,162
- Issue date Aug 22, 2000
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device with a Mg superlattice structure
- Patent number 5,828,086
- Issue date Oct 27, 1998
- Sony Corporation
- Akira Ishibashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Cleaved semiconductor device with {11-20} plane
- Patent number 5,821,568
- Issue date Oct 13, 1998
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cleaved surface
- Patent number 5,753,966
- Issue date May 19, 1998
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A SOI substrate fabricating method
- Patent number 5,705,421
- Issue date Jan 6, 1998
- Sony Corporation
- Takeshi Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device with defect decomposing and blo...
- Patent number 5,665,977
- Issue date Sep 9, 1997
- Sony Corporation
- Akira Ishibashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having an active layer with regions with diffe...
- Patent number 5,418,374
- Issue date May 23, 1995
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CRYSTAL FILM, CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE
- Publication number 20140235037
- Publication date Aug 21, 2014
- SONY CORPORATION
- Etsuo Morita
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal film, crystal substrate, and semiconductor device
- Publication number 20080050599
- Publication date Feb 28, 2008
- SONY CORPORATION
- Etsuo Morita
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal firm, crystal substrate, and semiconductor device
- Publication number 20070125996
- Publication date Jun 7, 2007
- SONY CORPORATION
- Etsuo Morita
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of crystallizing a nitride III-V compound semiconductor laye...
- Publication number 20050196888
- Publication date Sep 8, 2005
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crystal film, crystal substrate, and semiconductor device
- Publication number 20040067648
- Publication date Apr 8, 2004
- Etsuo Morita
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor light emitting device and fabrication method thereof
- Publication number 20030180977
- Publication date Sep 25, 2003
- June Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing crystal of III-V compounds of the nitride s...
- Publication number 20030073315
- Publication date Apr 17, 2003
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode, semiconductor device and methods for making them
- Publication number 20020146856
- Publication date Oct 10, 2002
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE, SEMICONDUCTOR DEVICE AND METHODS FOR MAKING THEM
- Publication number 20020081800
- Publication date Jun 27, 2002
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
- Publication number 20010048114
- Publication date Dec 6, 2001
- ETSUO MORITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing crystal of III-V compound of the nitride sy...
- Publication number 20010020440
- Publication date Sep 13, 2001
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20010010941
- Publication date Aug 2, 2001
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing crystal of III-V compounds of the nitride s...
- Publication number 20010004488
- Publication date Jun 21, 2001
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing crystal of III-V compound of the nitride sy...
- Publication number 20010003019
- Publication date Jun 7, 2001
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS

Etsuo Morita

Person

Patents Grantslast 30 patents

Crystal film, crystal substrate, and semiconductor device

Crystal firm, crystal substrate, and semiconductor device

Crystal film, crystal substrate, and semiconductor device

Method of manufacturing crystal of III-V compound of the nitride sy...

Method of manufacturing crystal of III-V compound of the nitride sy...

Method of crystallizing a nitride III-V compound semiconductor laye...

Method of crystallizing a nitride III-V compound semiconductor laye...

Semiconductor light emitting device and fabrication method thereof

METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE S...

Semiconductor substrate made of a nitride III-V compound semiconduc...

METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE S...

Semiconductor device on a sapphire substrate

Semiconductor light emitting device

Method for manufacture of cleaved light emitting semiconductor device

Semiconductor light emitting device with a Mg superlattice structure

Cleaved semiconductor device with {11-20} plane

Semiconductor device with cleaved surface

A SOI substrate fabricating method

Semiconductor light emitting device with defect decomposing and blo...

Semiconductor device having an active layer with regions with diffe...

Patents Applicationslast 30 patents

CRYSTAL FILM, CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE

Crystal film, crystal substrate, and semiconductor device

Crystal firm, crystal substrate, and semiconductor device

Method of crystallizing a nitride III-V compound semiconductor laye...

Crystal film, crystal substrate, and semiconductor device

Semiconductor light emitting device and fabrication method thereof

Method of manufacturing crystal of III-V compounds of the nitride s...

Electrode, semiconductor device and methods for making them

ELECTRODE, SEMICONDUCTOR DEVICE AND METHODS FOR MAKING THEM

SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

Method of manufacturing crystal of III-V compound of the nitride sy...

Semiconductor device and its manufacturing method

Method of manufacturing crystal of III-V compounds of the nitride s...

Method of manufacturing crystal of III-V compound of the nitride sy...