Eugene Chen

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Utilizing joint-probabilistic ensemble forecasting to generate impr...
- Patent number 11,227,226
- Issue date Jan 18, 2022
- Adobe Inc.
- Eugene Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for providing a magnetic junction on a substrate and usable...
- Patent number 9,799,382
- Issue date Oct 24, 2017
- Samsung Electronics Co., Ltd.
- Dustin William Erickson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and system for providing magnetic junctions having a thermal...
- Patent number 9,029,965
- Issue date May 12, 2015
- Samsung Electronics Co., Ltd.
- Eugene Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a nonvolatile logic array
- Patent number 8,890,569
- Issue date Nov 18, 2014
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetic tunneling junction seed, capping, and spacer layer materials
- Patent number 8,779,538
- Issue date Jul 15, 2014
- Samsung Electronics Co., Ltd.
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunneling junction elements having magnetic substructures(...
- Patent number 8,546,896
- Issue date Oct 1, 2013
- Grandis, Inc.
- Daniel Lottis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing magnetic storage device and magnetic stora...
- Patent number 8,546,151
- Issue date Oct 1, 2013
- Renesas Electronics Corporation
- Haruo Furuta
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic element having perpendicular anisotropy with enhanced effi...
- Patent number 8,456,898
- Issue date Jun 4, 2013
- Grandis Inc.
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three terminal magnetic element
- Patent number 8,406,045
- Issue date Mar 26, 2013
- Grandis Inc.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element having perpendicular anisotropy with enhanced effi...
- Patent number 8,072,800
- Issue date Dec 6, 2011
- Grandis Inc.
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic device having multilayered free ferromagnetic layer
- Patent number 7,973,349
- Issue date Jul 5, 2011
- Grandis Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic element utilizing free layer engineering
- Patent number 7,916,433
- Issue date Mar 29, 2011
- Grandis, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic devices having oxide antiferromagnetic layer next to free...
- Patent number 7,859,034
- Issue date Dec 28, 2010
- Grandis Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and system for providing a magnetic element and magnetic mem...
- Patent number 7,800,942
- Issue date Sep 21, 2010
- Grandis, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Current driven memory cells having enhanced current and enhanced cu...
- Patent number 7,791,931
- Issue date Sep 7, 2010
- Grandis, Inc.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device having stabilized free ferromagnetic layer
- Patent number 7,777,261
- Issue date Aug 17, 2010
- Grandis Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element utilizing free layer engineering
- Patent number 7,760,474
- Issue date Jul 20, 2010
- Grandis, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing spin transfer tunneling magnetic me...
- Patent number 7,742,328
- Issue date Jun 22, 2010
- Grandis, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memories utilizing a magnetic element having an engineered...
- Patent number 7,663,848
- Issue date Feb 16, 2010
- Grandis, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a magnetic memory structure utilizi...
- Patent number 7,623,369
- Issue date Nov 24, 2009
- Grandis, Inc.
- Xiao Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Current driven memory cells having enhanced current and enhanced cu...
- Patent number 7,515,457
- Issue date Apr 7, 2009
- Grandis, Inc.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer switching magnetic elements using ferrimagnets and ma...
- Patent number 7,489,541
- Issue date Feb 10, 2009
- Grandis, Inc.
- Mahendra Pakala
- G11 - INFORMATION STORAGE
Information Patent Grant
Current-switched spin-transfer magnetic devices with reduced spin-t...
- Patent number 7,430,135
- Issue date Sep 30, 2008
- Grandis Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Current driven switching of magnetic storage cells utilizing spin t...
- Patent number 7,379,327
- Issue date May 27, 2008
- Grandis, Inc.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a magnetic memory structure utilizi...
- Patent number 7,345,912
- Issue date Mar 18, 2008
- Grandis, Inc.
- Xiao Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Current driven switched magnetic storage cells having improved read...
- Patent number 7,286,395
- Issue date Oct 23, 2007
- Grandis, Inc.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory array architecture
- Patent number 7,283,384
- Issue date Oct 16, 2007
- Silicon Magnetic Systems
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Current driven switching of magnetic storage cells utilizing spin t...
- Patent number 7,272,034
- Issue date Sep 18, 2007
- Grandis, Inc.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Current driven switching of magnetic storage cells utilizing spin t...
- Patent number 7,272,035
- Issue date Sep 18, 2007
- Grandis, Inc.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for fabricating magnetic cell junctions and a structure res...
- Patent number 7,205,164
- Issue date Apr 17, 2007
- Silicon Magnetic Systems
- Sam Geha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
UTILIZING JOINT-PROBABILISTIC ENSEMBLE FORECASTING TO GENERATE IMPR...
- Publication number 20190114554
- Publication date Apr 18, 2019
- ADOBE INC.
- Eugene Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR PROVIDING FOR THIN (001) ORIENTATION MgO LAYERS FOR MAGN...
- Publication number 20160086645
- Publication date Mar 24, 2016
- Samsung Electronics Co., Ltd.
- Dustin William Erickson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A NONVOLATILE LOGIC ARRAY
- Publication number 20140225643
- Publication date Aug 14, 2014
- Dmytro Apalkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A THERMAL...
- Publication number 20140151831
- Publication date Jun 5, 2014
- Samsung Electronics Co., Ltd.
- Eugene Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION SEED, CAPPING, AND SPACER LAYER MATERIALS
- Publication number 20140008742
- Publication date Jan 9, 2014
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic Element Having Perpendicular Anisotropy With Enhanced Effi...
- Publication number 20120075927
- Publication date Mar 29, 2012
- Grandis Inc.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...
- Publication number 20120012953
- Publication date Jan 19, 2012
- GRANDIS, INC.
- Daniel Lottis
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPEND...
- Publication number 20110140217
- Publication date Jun 16, 2011
- GRANDIS, INC.
- Paul P. Nguyen
- G01 - MEASURING TESTING
Information Patent Application
Magnetic Element Having Perpendicular Anisotropy With Enhanced Effi...
- Publication number 20110064969
- Publication date Mar 17, 2011
- Grandis Inc.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING MAGNETIC STORAGE DEVICE AND MAGNETIC STORA...
- Publication number 20100264501
- Publication date Oct 21, 2010
- Haruo Furuta
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC ELEMENT UTILIZING FREE LAYER ENGINEERING
- Publication number 20100247967
- Publication date Sep 30, 2010
- GRANDIS, INC.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free...
- Publication number 20100072524
- Publication date Mar 25, 2010
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT DRIVEN MEMORY CELLS HAVING ENHANCED CURRENT AND ENHANCED CU...
- Publication number 20090213640
- Publication date Aug 27, 2009
- GRANDIS, INC.
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER TUNNELING MAGNETIC ME...
- Publication number 20090185410
- Publication date Jul 23, 2009
- GRANDIS, INC.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER TUNNELING MAGNETIC ME...
- Publication number 20080310213
- Publication date Dec 18, 2008
- GRANDIS, INC.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A MAGNETIC ELEMENT AND MAGNETIC MEM...
- Publication number 20080310219
- Publication date Dec 18, 2008
- GRANDIS, INC.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Current driven memory cells having enhanced current and enhanced cu...
- Publication number 20080205121
- Publication date Aug 28, 2008
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZI...
- Publication number 20080151611
- Publication date Jun 26, 2008
- GRANDIS, INC.
- Xiao Luo
- G11 - INFORMATION STORAGE
Information Patent Application
Current driven switching of magnetic storage cells utilizing spin t...
- Publication number 20070297223
- Publication date Dec 27, 2007
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Method and system for providing a magnetic memory structure utilizi...
- Publication number 20070279968
- Publication date Dec 6, 2007
- Xiao Luo
- G11 - INFORMATION STORAGE
Information Patent Application
On-plug magnetic tunnel junction devices based on spin torque trans...
- Publication number 20070246787
- Publication date Oct 25, 2007
- Lien-Chang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Current-switched spin-transfer magnetic devices with reduced spin-t...
- Publication number 20070171694
- Publication date Jul 26, 2007
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
Current driven switched magnetic storage cells having improved read...
- Publication number 20070097730
- Publication date May 3, 2007
- Eugene Youjun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Spin-transfer switching magnetic elements using ferrimagnets and ma...
- Publication number 20070074317
- Publication date Mar 29, 2007
- Mahendra Pakala
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic device having stabilized free ferromagnetic layer
- Publication number 20070063236
- Publication date Mar 22, 2007
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic device having multilayered free ferromagnetic layer
- Publication number 20070063237
- Publication date Mar 22, 2007
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory cell junction and method for forming a magnetic mem...
- Publication number 20040175848
- Publication date Sep 9, 2004
- Eugene Y. Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic element with an improved magnetoresistance ratio and fabri...
- Publication number 20030048658
- Publication date Mar 13, 2003
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY

Eugene Chen

Person

Patents Grantslast 30 patents

Utilizing joint-probabilistic ensemble forecasting to generate impr...

Method for providing a magnetic junction on a substrate and usable...

Method and system for providing magnetic junctions having a thermal...

Method and system for providing a nonvolatile logic array

Magnetic tunneling junction seed, capping, and spacer layer materials

Magnetic tunneling junction elements having magnetic substructures(...

Method for manufacturing magnetic storage device and magnetic stora...

Magnetic element having perpendicular anisotropy with enhanced effi...

Three terminal magnetic element

Magnetic element having perpendicular anisotropy with enhanced effi...

Magnetic device having multilayered free ferromagnetic layer

Magnetic element utilizing free layer engineering

Magnetic devices having oxide antiferromagnetic layer next to free...

Method and system for providing a magnetic element and magnetic mem...

Current driven memory cells having enhanced current and enhanced cu...

Magnetic device having stabilized free ferromagnetic layer

Magnetic element utilizing free layer engineering

Method and system for providing spin transfer tunneling magnetic me...

Magnetic memories utilizing a magnetic element having an engineered...

Method and system for providing a magnetic memory structure utilizi...

Current driven memory cells having enhanced current and enhanced cu...

Spin-transfer switching magnetic elements using ferrimagnets and ma...

Current-switched spin-transfer magnetic devices with reduced spin-t...

Current driven switching of magnetic storage cells utilizing spin t...

Method and system for providing a magnetic memory structure utilizi...

Current driven switched magnetic storage cells having improved read...

Magnetic memory array architecture

Current driven switching of magnetic storage cells utilizing spin t...

Current driven switching of magnetic storage cells utilizing spin t...

Methods for fabricating magnetic cell junctions and a structure res...

Patents Applicationslast 30 patents

UTILIZING JOINT-PROBABILISTIC ENSEMBLE FORECASTING TO GENERATE IMPR...

METHOD FOR PROVIDING FOR THIN (001) ORIENTATION MgO LAYERS FOR MAGN...

METHOD AND SYSTEM FOR PROVIDING A NONVOLATILE LOGIC ARRAY

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A THERMAL...

MAGNETIC TUNNELING JUNCTION SEED, CAPPING, AND SPACER LAYER MATERIALS

Magnetic Element Having Perpendicular Anisotropy With Enhanced Effi...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...

SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPEND...

Magnetic Element Having Perpendicular Anisotropy With Enhanced Effi...

METHOD FOR MANUFACTURING MAGNETIC STORAGE DEVICE AND MAGNETIC STORA...

MAGNETIC ELEMENT UTILIZING FREE LAYER ENGINEERING

Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free...

CURRENT DRIVEN MEMORY CELLS HAVING ENHANCED CURRENT AND ENHANCED CU...

METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER TUNNELING MAGNETIC ME...

METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER TUNNELING MAGNETIC ME...

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC ELEMENT AND MAGNETIC MEM...

Current driven memory cells having enhanced current and enhanced cu...

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZI...

Current driven switching of magnetic storage cells utilizing spin t...

Method and system for providing a magnetic memory structure utilizi...

On-plug magnetic tunnel junction devices based on spin torque trans...

Current-switched spin-transfer magnetic devices with reduced spin-t...

Current driven switched magnetic storage cells having improved read...

Spin-transfer switching magnetic elements using ferrimagnets and ma...

Magnetic device having stabilized free ferromagnetic layer

Magnetic device having multilayered free ferromagnetic layer

Magnetic memory cell junction and method for forming a magnetic mem...

Magnetic element with an improved magnetoresistance ratio and fabri...