FENG ZHOU

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a three-gate non-volatile flash memory cell using...
- Patent number 11,652,162
- Issue date May 16, 2023
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Set-while-verify circuit and reset-while verify circuit for resisti...
- Patent number 11,646,078
- Issue date May 9, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming a device with split gate non-volatile memory cell...
- Patent number 11,594,453
- Issue date Feb 28, 2023
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET split gate non-volatile memory cells with enhanced floating...
- Patent number 11,362,100
- Issue date Jun 14, 2022
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making embedded memory device with silicon-on-insulator s...
- Patent number 11,183,506
- Issue date Nov 23, 2021
- Silicon Storage Technology, Inc.
- Jinho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a device with FinFET split gate non-volatile memo...
- Patent number 11,114,451
- Issue date Sep 7, 2021
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cells with FinFET structure and HKMG...
- Patent number 10,937,794
- Issue date Mar 2, 2021
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cells and logic devices with FINFET...
- Patent number 10,818,680
- Issue date Oct 27, 2020
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET-based split gate non-volatile flash memory with extended sou...
- Patent number 10,797,142
- Issue date Oct 6, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making embedded memory device with silicon-on-insulator s...
- Patent number 10,790,292
- Issue date Sep 29, 2020
- Silicon Storage Technology, Inc.
- Jinho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Architectures and layouts for an array of resistive random access m...
- Patent number 10,755,779
- Issue date Aug 25, 2020
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate non-volatile memory cells with three-dimensional FinFET...
- Patent number 10,727,240
- Issue date Jul 28, 2020
- Silicon Store Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making split gate non-volatile memory cells with three-di...
- Patent number 10,644,012
- Issue date May 5, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cells and logic devices with FinFET...
- Patent number 10,468,428
- Issue date Nov 5, 2019
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resume host access based on transaction logs
- Patent number 10,387,275
- Issue date Aug 20, 2019
- Hewlett Packard Enterprise Development LP
- Feng Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile split game memory cells with integrated high K metal g...
- Patent number 10,381,359
- Issue date Aug 13, 2019
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two transistor FinFET-based split gate non-volatile floating gate f...
- Patent number 10,312,247
- Issue date Jun 4, 2019
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory (RRAM) cell filament formation using...
- Patent number 10,276,236
- Issue date Apr 30, 2019
- Silicon Storage Technology, Inc.
- Santosh Hariharan
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate non-volatile flash memory cell having metal gates
- Patent number 10,249,631
- Issue date Apr 2, 2019
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming pairs of three-gate non-volatile flash memory cel...
- Patent number 10,217,850
- Issue date Feb 26, 2019
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile flash memory cell having metal gates and me...
- Patent number 9,972,630
- Issue date May 15, 2018
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step voltage for forming resistive access memory (RRAM) cell...
- Patent number 9,959,927
- Issue date May 1, 2018
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile split gate memory cells with integrated high K metal g...
- Patent number 9,793,281
- Issue date Oct 17, 2017
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-aligned split-gate memory cell array with me...
- Patent number 9,721,958
- Issue date Aug 1, 2017
- Silicon Storage Technology, Inc.
- Jeng-Wei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming memory array and logic devices
- Patent number 9,673,208
- Issue date Jun 6, 2017
- Silicon Storage Technology, Inc.
- Jinho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile split gate memory cells with integrated high K metal g...
- Patent number 9,634,019
- Issue date Apr 25, 2017
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuitry including resistive random access memory storage cells an...
- Patent number 9,444,048
- Issue date Sep 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Peter J. Kuhn
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory array with concurrently formed low and high vol...
- Patent number 9,276,005
- Issue date Mar 1, 2016
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for motion estimation for large-size block
- Patent number 9,271,010
- Issue date Feb 23, 2016
- FutureWei Technologies, Inc.
- Feng Zhou
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Field focusing features in a ReRAM cell
- Patent number 9,118,008
- Issue date Aug 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING A DEVICE WITH PLANAR SPLIT GATE NON-VOLATILE MEMO...
- Publication number 20230290864
- Publication date Sep 14, 2023
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CEL...
- Publication number 20230238453
- Publication date Jul 27, 2023
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
Method Of Forming A Device With Split Gate Non-volatile Memory Cell...
- Publication number 20220231037
- Publication date Jul 21, 2022
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SPLIT GATE NON-VOLATILE MEMORY CELLS WITH ENHANCED FLOATING...
- Publication number 20210305264
- Publication date Sep 30, 2021
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming A Device With FINFET Split Gate Non-volatile Memo...
- Publication number 20210272973
- Publication date Sep 2, 2021
- Sillicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...
- Publication number 20210257023
- Publication date Aug 19, 2021
- Silicon Storage Technology, Inc.
- HIEU VAN TRAN
- G11 - INFORMATION STORAGE
Information Patent Application
OPTICAL MODULE AND ERBIUM-DOPED FIBER AMPLIFIER
- Publication number 20210210922
- Publication date Jul 8, 2021
- Molex, LLC
- Hai-Feng LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming A Device With Split Gate Non-volatile Memory Cell...
- Publication number 20210193671
- Publication date Jun 24, 2021
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CEL...
- Publication number 20200411673
- Publication date Dec 31, 2020
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
Method Of Making Embedded Memory Device With Silicon-On-Insulator S...
- Publication number 20200395370
- Publication date Dec 17, 2020
- Silicon Storage Technology,Inc.
- Jinho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET-Based Split Gate Non-volatile Flash Memory With Extended Sou...
- Publication number 20200176578
- Publication date Jun 4, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Non-volatile Memory Cells With FINFET Structure And HKMG...
- Publication number 20200176459
- Publication date Jun 4, 2020
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Non-Volatile Memory Cells With Three-Dimensional FINFET...
- Publication number 20200013786
- Publication date Jan 9, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Making Split Gate Non-Volatile Memory Cells With Three-Di...
- Publication number 20200013788
- Publication date Jan 9, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Non-volatile Memory Cells And Logic Devices With FINFET...
- Publication number 20200013789
- Publication date Jan 9, 2020
- Silicon Storage Technology, Inc.
- FENG ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Making Embedded Memory Device With Silicon-On-Insulator S...
- Publication number 20190348427
- Publication date Nov 14, 2019
- Silicon Storage Technology, Inc.
- Jinho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELLS AND LOGIC DEVICES WITH FINFET...
- Publication number 20190326305
- Publication date Oct 24, 2019
- Silicon Storage Technology, Inc.
- FENG ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cel...
- Publication number 20190148529
- Publication date May 16, 2019
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
Architectures and Layouts for an Array Of Resistive Random Access M...
- Publication number 20190080753
- Publication date Mar 14, 2019
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Application
Methods For Writing To An Array Of Resistive Random Access Memory C...
- Publication number 20190080754
- Publication date Mar 14, 2019
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Application
Split Gate Non-volatile Flash Memory Cell Having Metal Gates
- Publication number 20180226420
- Publication date Aug 9, 2018
- Sillicon Storage Technology, Inc.
- CHIEN-SHENG SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Resistive Random Access Memory (RRAM) Cells
- Publication number 20180145253
- Publication date May 24, 2018
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cel...
- Publication number 20180069104
- Publication date Mar 8, 2018
- SILICON STORAGE TECHNOLOGY. Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESUME HOST ACCESS BASED ON TRANSACTION LOGS
- Publication number 20180032412
- Publication date Feb 1, 2018
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Feng Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Current Forming Of Resistive Random Access Memory (RRAM) Cell Filament
- Publication number 20180033482
- Publication date Feb 1, 2018
- Silicon Storage Technology, Inc.
- Santosh Hariharan
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE SPLIT GATE MEMORY CELLS WITH INTEGRATED HIGH K METAL G...
- Publication number 20170373077
- Publication date Dec 28, 2017
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Step Voltage For Forming Resistive Random Access Memory (RRAM...
- Publication number 20170316823
- Publication date Nov 2, 2017
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
Integration Of Metal Floating Gate In Non-Volatile Memory
- Publication number 20170125603
- Publication date May 4, 2017
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Non-volatile Flash Memory Cell Having Metal Gates And Me...
- Publication number 20170125429
- Publication date May 4, 2017
- Silicon Storage Technology, Inc.
- CHIEN-SHENG SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY ARRAY AND LOGIC DEVICES
- Publication number 20170103991
- Publication date Apr 13, 2017
- Silicon Storage Technology, Inc.
- JINHO KIM
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of forming a three-gate non-volatile flash memory cell using...

Set-while-verify circuit and reset-while verify circuit for resisti...

Method of forming a device with split gate non-volatile memory cell...

FinFET split gate non-volatile memory cells with enhanced floating...

Method of making embedded memory device with silicon-on-insulator s...

Method of forming a device with FinFET split gate non-volatile memo...

Split gate non-volatile memory cells with FinFET structure and HKMG...

Split gate non-volatile memory cells and logic devices with FINFET...

FinFET-based split gate non-volatile flash memory with extended sou...

Method of making embedded memory device with silicon-on-insulator s...

Architectures and layouts for an array of resistive random access m...

Split gate non-volatile memory cells with three-dimensional FinFET...

Method of making split gate non-volatile memory cells with three-di...

Split gate non-volatile memory cells and logic devices with FinFET...

Resume host access based on transaction logs

Non-volatile split game memory cells with integrated high K metal g...

Two transistor FinFET-based split gate non-volatile floating gate f...

Resistive random access memory (RRAM) cell filament formation using...

Split gate non-volatile flash memory cell having metal gates

Method of forming pairs of three-gate non-volatile flash memory cel...

Split gate non-volatile flash memory cell having metal gates and me...

Multi-step voltage for forming resistive access memory (RRAM) cell...

Non-volatile split gate memory cells with integrated high K metal g...

Method of forming self-aligned split-gate memory cell array with me...

Method of forming memory array and logic devices

Non-volatile split gate memory cells with integrated high K metal g...

Circuitry including resistive random access memory storage cells an...

Non-volatile memory array with concurrently formed low and high vol...

System and method for motion estimation for large-size block

Field focusing features in a ReRAM cell

Patents Applicationslast 30 patents

METHOD OF FORMING A DEVICE WITH PLANAR SPLIT GATE NON-VOLATILE MEMO...

METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CEL...

Method Of Forming A Device With Split Gate Non-volatile Memory Cell...

FINFET SPLIT GATE NON-VOLATILE MEMORY CELLS WITH ENHANCED FLOATING...

Method Of Forming A Device With FINFET Split Gate Non-volatile Memo...

Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...

OPTICAL MODULE AND ERBIUM-DOPED FIBER AMPLIFIER

Method Of Forming A Device With Split Gate Non-volatile Memory Cell...

METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CEL...

Method Of Making Embedded Memory Device With Silicon-On-Insulator S...

FINFET-Based Split Gate Non-volatile Flash Memory With Extended Sou...

Split Gate Non-volatile Memory Cells With FINFET Structure And HKMG...

Split Gate Non-Volatile Memory Cells With Three-Dimensional FINFET...

Method Of Making Split Gate Non-Volatile Memory Cells With Three-Di...

Split Gate Non-volatile Memory Cells And Logic Devices With FINFET...

Method of Making Embedded Memory Device With Silicon-On-Insulator S...

SPLIT GATE NON-VOLATILE MEMORY CELLS AND LOGIC DEVICES WITH FINFET...

Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cel...

Architectures and Layouts for an Array Of Resistive Random Access M...

Methods For Writing To An Array Of Resistive Random Access Memory C...

Split Gate Non-volatile Flash Memory Cell Having Metal Gates

Method of Forming Resistive Random Access Memory (RRAM) Cells

Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cel...

RESUME HOST ACCESS BASED ON TRANSACTION LOGS

Current Forming Of Resistive Random Access Memory (RRAM) Cell Filament

NON-VOLATILE SPLIT GATE MEMORY CELLS WITH INTEGRATED HIGH K METAL G...

Multi-Step Voltage For Forming Resistive Random Access Memory (RRAM...

Integration Of Metal Floating Gate In Non-Volatile Memory

Split Gate Non-volatile Flash Memory Cell Having Metal Gates And Me...

METHOD OF FORMING MEMORY ARRAY AND LOGIC DEVICES