Fengyan Zhang

Person

Vancouver, WA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanotip electrode electroluminescence device
- Patent number 8,242,482
- Issue date Aug 14, 2012
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for forming an iridium oxide (IrOx) nanowire neural sensor a...
- Patent number 7,905,013
- Issue date Mar 15, 2011
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
IrOx nanostructure electrode neural interface optical device
- Patent number 7,816,753
- Issue date Oct 19, 2010
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanorod sensor with single-plane electrodes
- Patent number 7,759,150
- Issue date Jul 20, 2010
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- G01 - MEASURING TESTING
Information Patent Grant
Method of etching a TE/PCMO stack using an etch stop layer
- Patent number 7,727,897
- Issue date Jun 1, 2010
- Sharp Laboratories of America, Inc.
- Bruce D. Ulrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotip capacitor
- Patent number 7,645,669
- Issue date Jan 12, 2010
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photovoltaic structure with a conductive nanowire array electrode
- Patent number 7,635,600
- Issue date Dec 22, 2009
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Optical device with IrOx nanostructure electrode neural interface
- Patent number 7,494,840
- Issue date Feb 24, 2009
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Nanoelectrochemical cell
- Patent number 7,446,014
- Issue date Nov 4, 2008
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ambient environment nanowire sensor
- Patent number 7,438,759
- Issue date Oct 21, 2008
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
PCMO thin film with memory resistance properties
- Patent number 7,402,456
- Issue date Jul 22, 2008
- Sharp Laboratories of America, Inc.
- Wei-Wei Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for operating an MFIS ferroelectric memory array
- Patent number 7,379,320
- Issue date May 27, 2008
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon phosphor electroluminescence device with nanotip electrode
- Patent number 7,364,924
- Issue date Apr 29, 2008
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Iridium etching for FeRAM applications
- Patent number 7,267,996
- Issue date Sep 11, 2007
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with buffered-layer
- Patent number 7,256,429
- Issue date Aug 14, 2007
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Iridium oxide nanowires and method for forming same
- Patent number 7,255,745
- Issue date Aug 14, 2007
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory resistor cell with nanotip electrode
- Patent number 7,208,372
- Issue date Apr 24, 2007
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with an asymmetrical area
- Patent number 7,196,387
- Issue date Mar 27, 2007
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
One mask Pt/PCMO/Pt stack etching process for RRAM applications
- Patent number 7,169,637
- Issue date Jan 30, 2007
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory resistance film with controlled oxygen content
- Patent number 7,148,533
- Issue date Dec 12, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating nano-scale resistance cross-point memory array
- Patent number 7,141,481
- Issue date Nov 28, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
MFIS ferroelectric memory array
- Patent number 7,112,837
- Issue date Sep 26, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed noble metal/noble metal oxide bottom electrode for enhanced P...
- Patent number 7,101,720
- Issue date Sep 5, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Iridium oxide nanotubes and method for forming same
- Patent number 7,098,144
- Issue date Aug 29, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Iridium oxide nanostructure
- Patent number 7,053,403
- Issue date May 30, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Pt/PGO etching process for FeRAM applications
- Patent number 7,041,511
- Issue date May 9, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffered-layer memory cell
- Patent number 7,029,924
- Issue date Apr 18, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of affecting RRAM characteristics by doping PCMO thin films
- Patent number 7,029,982
- Issue date Apr 18, 2006
- Sharp Laboratories of America, Inc.
- Wei-Wei Zhuang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Iridium oxide nanostructure patterning
- Patent number 7,022,621
- Issue date Apr 4, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Single-phase c-axis doped PGO ferroelectric thin films
- Patent number 7,009,231
- Issue date Mar 7, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IrOx Nanostructure Electrode Neural Interface Optical Device
- Publication number 20090024182
- Publication date Jan 22, 2009
- Fengyan Zhang
- C30 - CRYSTAL GROWTH
Information Patent Application
IrOx nanowire protein sensor
- Publication number 20090017197
- Publication date Jan 15, 2009
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- G01 - MEASURING TESTING
Information Patent Application
OPTICAL DEVICE WITH IROX NANOSTRUTURE ELECTRODE NEURAL INTERFACE
- Publication number 20090011536
- Publication date Jan 8, 2009
- Fengyan Zhang
- C30 - CRYSTAL GROWTH
Information Patent Application
IrOx nanowire neural sensor
- Publication number 20080299381
- Publication date Dec 4, 2008
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Nanorod sensor with single-plane electrodes
- Publication number 20080290431
- Publication date Nov 27, 2008
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- G01 - MEASURING TESTING
Information Patent Application
Nanowire sensor with self-aligned electrode support
- Publication number 20080277746
- Publication date Nov 13, 2008
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Nanotip capacitor
- Publication number 20080197399
- Publication date Aug 21, 2008
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanotip Electrode Electroluminescence Device
- Publication number 20080191636
- Publication date Aug 14, 2008
- Sheng Teng Hsu
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Multiple stacked nanostructure arrays and methods for making the same
- Publication number 20080157354
- Publication date Jul 3, 2008
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Solar cell structures using porous column TiO2 films deposited by CVD
- Publication number 20080092955
- Publication date Apr 24, 2008
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Nanoelectrochemical cell
- Publication number 20080096345
- Publication date Apr 24, 2008
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ambient environment nanowire sensor
- Publication number 20080010707
- Publication date Jan 10, 2008
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Nanotip electrode non-volatile memory resistor cell
- Publication number 20070167008
- Publication date Jul 19, 2007
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Photovoltaic structure with a conductive nanowire array electrode
- Publication number 20070111368
- Publication date May 17, 2007
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method of etching a TE/PCMO stack using an etch stop layer
- Publication number 20070049029
- Publication date Mar 1, 2007
- Sharp Laboratories of America, Inc.
- Bruce D. Ulrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon phosphor electroluminescence device with nanotip electrode
- Publication number 20060180817
- Publication date Aug 17, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Non-volatile memory resistor cell with nanotip electrode
- Publication number 20060160304
- Publication date Jul 20, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IRIDIUM OXIDE NANOSTRUCTURE
- Publication number 20060124926
- Publication date Jun 15, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Memory cell with buffered layer
- Publication number 20060099724
- Publication date May 11, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
Iridium oxide nanotubes and method for forming same
- Publication number 20060099758
- Publication date May 11, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- C30 - CRYSTAL GROWTH
Information Patent Application
Iridium oxide nanowires and method for forming same
- Publication number 20060086314
- Publication date Apr 27, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF AFFECTING RRAM CHARACTERISTICS BY DOPING PCMO THIN FILMS
- Publication number 20060088974
- Publication date Apr 27, 2006
- Sharp Laboratories of America, Inc.
- Wei-Wei Zhuang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IRIDIUM OXIDE NANOSTRUCTURE PATTERNING
- Publication number 20060088993
- Publication date Apr 27, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
MFIS ferroelectric memory array
- Publication number 20060068509
- Publication date Mar 30, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for operating an MFIS ferroelectric memory array
- Publication number 20060068508
- Publication date Mar 30, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Iridium etching for FeRAM applications
- Publication number 20060040493
- Publication date Feb 23, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pt/PGO etching process for FeRAM applications
- Publication number 20060040413
- Publication date Feb 23, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory resistance film with controlled oxygen content
- Publication number 20060011897
- Publication date Jan 19, 2006
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
One mask Pt/PCMO/Pt stack etching process for RRAM applications
- Publication number 20060003489
- Publication date Jan 5, 2006
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell with an asymmetrical area
- Publication number 20050243630
- Publication date Nov 3, 2005
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- G11 - INFORMATION STORAGE

Fengyan Zhang

Person

Patents Grantslast 30 patents

Nanotip electrode electroluminescence device

Method for forming an iridium oxide (IrOx) nanowire neural sensor a...

IrOx nanostructure electrode neural interface optical device

Nanorod sensor with single-plane electrodes

Method of etching a TE/PCMO stack using an etch stop layer

Nanotip capacitor

Photovoltaic structure with a conductive nanowire array electrode

Optical device with IrOx nanostructure electrode neural interface

Nanoelectrochemical cell

Ambient environment nanowire sensor

PCMO thin film with memory resistance properties

Method for operating an MFIS ferroelectric memory array

Silicon phosphor electroluminescence device with nanotip electrode

Iridium etching for FeRAM applications

Memory cell with buffered-layer

Iridium oxide nanowires and method for forming same

Non-volatile memory resistor cell with nanotip electrode

Memory cell with an asymmetrical area

One mask Pt/PCMO/Pt stack etching process for RRAM applications

Memory resistance film with controlled oxygen content

Method of fabricating nano-scale resistance cross-point memory array

MFIS ferroelectric memory array

Mixed noble metal/noble metal oxide bottom electrode for enhanced P...

Iridium oxide nanotubes and method for forming same

Iridium oxide nanostructure

Pt/PGO etching process for FeRAM applications

Buffered-layer memory cell

Method of affecting RRAM characteristics by doping PCMO thin films

Iridium oxide nanostructure patterning

Single-phase c-axis doped PGO ferroelectric thin films

Patents Applicationslast 30 patents

IrOx Nanostructure Electrode Neural Interface Optical Device

IrOx nanowire protein sensor

OPTICAL DEVICE WITH IROX NANOSTRUTURE ELECTRODE NEURAL INTERFACE

IrOx nanowire neural sensor

Nanorod sensor with single-plane electrodes

Nanowire sensor with self-aligned electrode support

Nanotip capacitor

Nanotip Electrode Electroluminescence Device

Multiple stacked nanostructure arrays and methods for making the same

Solar cell structures using porous column TiO2 films deposited by CVD

Nanoelectrochemical cell

Ambient environment nanowire sensor

Nanotip electrode non-volatile memory resistor cell

Photovoltaic structure with a conductive nanowire array electrode

Method of etching a TE/PCMO stack using an etch stop layer

Silicon phosphor electroluminescence device with nanotip electrode

Non-volatile memory resistor cell with nanotip electrode

IRIDIUM OXIDE NANOSTRUCTURE

Memory cell with buffered layer

Iridium oxide nanotubes and method for forming same

Iridium oxide nanowires and method for forming same

METHOD OF AFFECTING RRAM CHARACTERISTICS BY DOPING PCMO THIN FILMS

IRIDIUM OXIDE NANOSTRUCTURE PATTERNING

MFIS ferroelectric memory array

Method for operating an MFIS ferroelectric memory array

Iridium etching for FeRAM applications

Pt/PGO etching process for FeRAM applications

Memory resistance film with controlled oxygen content

One mask Pt/PCMO/Pt stack etching process for RRAM applications

Memory cell with an asymmetrical area