Ferdinando Iucolano

Person

Gravina di Catania, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a gate terminal of a HEMT device, and HEMT...
- Patent number 12,165,871
- Issue date Dec 10, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an ohmic contact for a HEMT device
- Patent number 12,154,967
- Issue date Nov 26, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor with adjusted gate-source distance, and manufacturi...
- Patent number 12,062,715
- Issue date Aug 13, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor of the normally off type including a trench contain...
- Patent number 11,862,707
- Issue date Jan 2, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GAN-based, lateral-conduction, electronic device with improved meta...
- Patent number 11,854,977
- Issue date Dec 26, 2023
- STMicroelectronics S.r.l.
- Santo Alessandro Smerzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including an improved gate region and related manuf...
- Patent number 11,799,025
- Issue date Oct 24, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a HEMT device with reduced gate leakage cur...
- Patent number 11,728,404
- Issue date Aug 15, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Normally-off HEMT transistor with selective generation of 2DEG chan...
- Patent number 11,699,748
- Issue date Jul 11, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of an HEMT transistor of the normally off type...
- Patent number 11,538,922
- Issue date Dec 27, 2022
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 11,489,068
- Issue date Nov 1, 2022
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor with adjusted gate-source distance, and manufacturi...
- Patent number 11,316,038
- Issue date Apr 26, 2022
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off transistor with reduced on-state resistance and manufa...
- Patent number 11,222,969
- Issue date Jan 11, 2022
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor of the normally off type including a trench contain...
- Patent number 11,101,363
- Issue date Aug 24, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a HEMT device with reduced gate leakage cur...
- Patent number 11,043,574
- Issue date Jun 22, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Normally-off HEMT transistor with selective generation of 2DEG chan...
- Patent number 11,038,047
- Issue date Jun 15, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of an HEMT transistor of the normally off type...
- Patent number 10,896,969
- Issue date Jan 19, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 10,892,357
- Issue date Jan 12, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-power and high-frequency heterostructure field-effect transistor
- Patent number 10,651,304
- Issue date May 12, 2020
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off HEMT transistor with selective generation of 2DEG chan...
- Patent number 10,566,450
- Issue date Feb 18, 2020
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor of the normally off type including a trench contain...
- Patent number 10,522,646
- Issue date Dec 31, 2019
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor with high stress resilience during off state and ma...
- Patent number 10,516,041
- Issue date Dec 24, 2019
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-power and high-frequency heretostructure field-effect transistor
- Patent number 10,411,123
- Issue date Sep 10, 2019
- STMICROELECTRONICS S.R.L.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistors with improved electron mobility
- Patent number 10,396,192
- Issue date Aug 27, 2019
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 10,381,470
- Issue date Aug 13, 2019
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-power and high-frequency heterostructure field-effect transistor
- Patent number 10,050,136
- Issue date Aug 14, 2018
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a HEMT transistor and HEMT transistor with...
- Patent number 10,032,898
- Issue date Jul 24, 2018
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a HEMT transistor and HEMT transistor with...
- Patent number 9,882,040
- Issue date Jan 30, 2018
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...
- Publication number 20240405115
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maria Eloisa CASTAGNA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT POWER DEVICE WITH REDUCED GATE OSCILLATION AND MANUFACTURING P...
- Publication number 20240404945
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Antonio Filippo Massimo PIZZARDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...
- Publication number 20240332413
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF HETEROJUNCTION INTEGRATED DEVICE AND METHOD FOR MANUFA...
- Publication number 20240313102
- Publication date Sep 19, 2024
- STMicroelectronics International N.V.
- Cristina MICCOLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING A REDUCED ON-RESISTANCE AND MANUFACTURING PROCES...
- Publication number 20240304711
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Cristina TRINGALI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING...
- Publication number 20240304710
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Cristina TRINGALI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING A REDUCED GATE LEAKAGE AND MANUFACTURING PROCESS...
- Publication number 20240304713
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR
- Publication number 20240274702
- Publication date Aug 15, 2024
- STMicroelectronics International N.V.
- Aurore CONSTANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR
- Publication number 20240266425
- Publication date Aug 8, 2024
- STMicroelectronics International N.V.
- Aurore CONSTANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR
- Publication number 20240194763
- Publication date Jun 13, 2024
- STMicroelectronics International N.V.
- Aurore CONSTANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAIN...
- Publication number 20240178301
- Publication date May 30, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED, LATERAL-CONDUCTION, ELECTRONIC DEVICE WITH IMPROVED META...
- Publication number 20240162153
- Publication date May 16, 2024
- STMicroelectronics S.r.l.
- Santo Alessandro SMERZI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR INCLUDING AN IMPROVED GATE REGION AND RELATED MANUF...
- Publication number 20240021718
- Publication date Jan 18, 2024
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE AND MANUFACTURING PROCESS THEREOF
- Publication number 20230282727
- Publication date Sep 7, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING LOW CONDUCTION LOSSES AND MANUFACTURING PROCESS...
- Publication number 20230261100
- Publication date Aug 17, 2023
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE HEMT AND MANUFACTURING PROCESS OF THE SAME
- Publication number 20230246100
- Publication date Aug 3, 2023
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS OF AN OHMIC CONTACT OF A HEMT DEVICE AND HEMT...
- Publication number 20230246088
- Publication date Aug 3, 2023
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP TRANSISTOR WITH NANOLAMINATED INSULATING GATE STRUCTU...
- Publication number 20230246086
- Publication date Aug 3, 2023
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230047815
- Publication date Feb 16, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20220216333
- Publication date Jul 7, 2022
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF TRANSISTOR WITH REDUCED ON-STATE RESISTANCE AND MANUFA...
- Publication number 20220130990
- Publication date Apr 28, 2022
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE FOR LIDAR APPLICATIONS
- Publication number 20220013982
- Publication date Jan 13, 2022
- STMicroelectronics S.r.l.
- Antonio Filippo Massimo PIZZARDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAIN...
- Publication number 20210367062
- Publication date Nov 25, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A HEMT DEVICE WITH REDUCED GATE LEAKAGE CUR...
- Publication number 20210313446
- Publication date Oct 7, 2021
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF HEMT TRANSISTOR WITH SELECTIVE GENERATION OF 2DEG CHAN...
- Publication number 20210273087
- Publication date Sep 2, 2021
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR INCLUDING FIELD PLATE REGIONS AND MANUFACTURING PRO...
- Publication number 20210175350
- Publication date Jun 10, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A GATE TERMINAL OF A HEMT DEVICE, AND HEMT...
- Publication number 20210125834
- Publication date Apr 29, 2021
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF AN HEMT TRANSISTOR OF THE NORMALLY OFF TYPE...
- Publication number 20210091205
- Publication date Mar 25, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210091218
- Publication date Mar 25, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF TRANSISTOR WITH REDUCED ON-STATE RESISTANCE AND MANUFA...
- Publication number 20200203522
- Publication date Jun 25, 2020
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS

Ferdinando Iucolano

Person

Patents Grantslast 30 patents

Method for manufacturing a gate terminal of a HEMT device, and HEMT...

Method for manufacturing an ohmic contact for a HEMT device

Double-channel HEMT device and manufacturing method thereof

HEMT transistor with adjusted gate-source distance, and manufacturi...

HEMT transistor of the normally off type including a trench contain...

GAN-based, lateral-conduction, electronic device with improved meta...

HEMT transistor including an improved gate region and related manuf...

Method of manufacturing a HEMT device with reduced gate leakage cur...

Normally-off HEMT transistor with selective generation of 2DEG chan...

Manufacturing method of an HEMT transistor of the normally off type...

Double-channel HEMT device and manufacturing method thereof

HEMT transistor with adjusted gate-source distance, and manufacturi...

Normally-off transistor with reduced on-state resistance and manufa...

HEMT transistor of the normally off type including a trench contain...

Method of manufacturing a HEMT device with reduced gate leakage cur...

Normally-off HEMT transistor with selective generation of 2DEG chan...

Manufacturing method of an HEMT transistor of the normally off type...

Double-channel HEMT device and manufacturing method thereof

High-power and high-frequency heterostructure field-effect transistor

Normally-off HEMT transistor with selective generation of 2DEG chan...

HEMT transistor of the normally off type including a trench contain...

HEMT transistor with high stress resilience during off state and ma...

High-power and high-frequency heretostructure field-effect transistor

HEMT transistors with improved electron mobility

Double-channel HEMT device and manufacturing method thereof

High-power and high-frequency heterostructure field-effect transistor

Method for manufacturing a HEMT transistor and HEMT transistor with...

Method for manufacturing a HEMT transistor and HEMT transistor with...

Patents Applicationslast 30 patents

HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...

HEMT POWER DEVICE WITH REDUCED GATE OSCILLATION AND MANUFACTURING P...

HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...

NORMALLY-OFF HETEROJUNCTION INTEGRATED DEVICE AND METHOD FOR MANUFA...

HEMT DEVICE HAVING A REDUCED ON-RESISTANCE AND MANUFACTURING PROCES...

HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING...

HEMT DEVICE HAVING A REDUCED GATE LEAKAGE AND MANUFACTURING PROCESS...

HEMT TRANSISTOR

HEMT TRANSISTOR

HEMT TRANSISTOR

HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAIN...

GAN-BASED, LATERAL-CONDUCTION, ELECTRONIC DEVICE WITH IMPROVED META...

HEMT TRANSISTOR INCLUDING AN IMPROVED GATE REGION AND RELATED MANUF...

HEMT DEVICE AND MANUFACTURING PROCESS THEREOF

HEMT DEVICE HAVING LOW CONDUCTION LOSSES AND MANUFACTURING PROCESS...

ENHANCEMENT-MODE HEMT AND MANUFACTURING PROCESS OF THE SAME

MANUFACTURING PROCESS OF AN OHMIC CONTACT OF A HEMT DEVICE AND HEMT...

WIDE BAND GAP TRANSISTOR WITH NANOLAMINATED INSULATING GATE STRUCTU...

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...

NORMALLY-OFF TRANSISTOR WITH REDUCED ON-STATE RESISTANCE AND MANUFA...

ELECTRONIC DEVICE FOR LIDAR APPLICATIONS

HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAIN...

METHOD OF MANUFACTURING A HEMT DEVICE WITH REDUCED GATE LEAKAGE CUR...

NORMALLY-OFF HEMT TRANSISTOR WITH SELECTIVE GENERATION OF 2DEG CHAN...

HEMT TRANSISTOR INCLUDING FIELD PLATE REGIONS AND MANUFACTURING PRO...

METHOD FOR MANUFACTURING A GATE TERMINAL OF A HEMT DEVICE, AND HEMT...

MANUFACTURING METHOD OF AN HEMT TRANSISTOR OF THE NORMALLY OFF TYPE...

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

NORMALLY-OFF TRANSISTOR WITH REDUCED ON-STATE RESISTANCE AND MANUFA...