Francois Gregoire

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Cupertino, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Local control of electrical and mechanical properties of copper int...
- Patent number 7,235,884
- Issue date Jun 26, 2007
- Altera Corporation
- Peter John McElheny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon gate doping level variation for reduced leakage current
- Patent number 7,045,427
- Issue date May 16, 2006
- Altera Corporation
- Peter McElheny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with corner diffusions for reduced leakage
- Patent number 6,974,998
- Issue date Dec 13, 2005
- Altera Corporation
- Yowjuang (Bill) Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced MOSFET design
- Patent number 6,905,921
- Issue date Jun 14, 2005
- Altera Corporation
- Yowjuang (Bill) Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance capacitor structure
- Patent number 6,829,127
- Issue date Dec 7, 2004
- Altera Corporation
- Yow-Juang (Bill) Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon gate doping level variation for reduced leakage current
- Patent number 6,750,106
- Issue date Jun 15, 2004
- Altera Corporation
- Peter McElheny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit pad structures
- Patent number 5,939,790
- Issue date Aug 17, 1999
- Altera Corporation
- Francois Gregoire
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Polysilicon gate doping level variation for reduced leakage current
- Publication number 20050003601
- Publication date Jan 6, 2005
- Peter McElheny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON GATE DOPING LEVEL VARIATION FOR REDUCED LEAKAGE CURRENT
- Publication number 20040097043
- Publication date May 20, 2004
- Peter McElheny
- H01 - BASIC ELECTRIC ELEMENTS