Frank Feustel

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming 3-D integrated semiconductor devices having inte...
- Patent number 10,014,279
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer with improved plating current distribution
- Patent number 9,627,317
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a die seal leakage detection mate...
- Patent number 9,455,232
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer with improved plating current distribution
- Patent number 9,349,641
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-D integrated semiconductor device comprising intermediate heat sp...
- Patent number 9,318,468
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization system of a semiconductor device including metal pill...
- Patent number 9,245,860
- Issue date Jan 26, 2016
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedding metal silicide contact regions reliably into highly doped...
- Patent number 8,877,597
- Issue date Nov 4, 2014
- GLOBALFOUNDRIES Inc.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing adhesion of interlayer dielectric materials of semiconduc...
- Patent number 8,859,398
- Issue date Oct 14, 2014
- GLOBALFOUNDRIES Inc.
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization system of a semiconductor device comprising extra-tap...
- Patent number 8,835,303
- Issue date Sep 16, 2014
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Restricted stress regions formed in the contact level of a semicond...
- Patent number 8,828,887
- Issue date Sep 9, 2014
- GLOBALFOUNDRIE Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including ultra low-K (ULK) metallization stac...
- Patent number 8,786,088
- Issue date Jul 22, 2014
- GLOBALFOUNDRIES Inc.
- Torsten Huisinga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing penetration depth of drain and source implant...
- Patent number 8,735,237
- Issue date May 27, 2014
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising self-aligned contact bars and metal...
- Patent number 8,716,126
- Issue date May 6, 2014
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a hybrid metallization layer stack f...
- Patent number 8,698,312
- Issue date Apr 15, 2014
- GLOBALFOUNDRIES Inc.
- James Werking
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing copper defects during a wet chemical cleaning of exposed c...
- Patent number 8,673,087
- Issue date Mar 18, 2014
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for MOS devices by adapting a spacer width pri...
- Patent number 8,440,534
- Issue date May 14, 2013
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising self-aligned contact bars and metal...
- Patent number 8,399,352
- Issue date Mar 19, 2013
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sophisticated metallization systems in semiconductors formed by rem...
- Patent number 8,399,335
- Issue date Mar 19, 2013
- GLOBALFOUNDRIES, INC.
- Torsten Huisinga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metallization system of a semiconductor device...
- Patent number 8,377,820
- Issue date Feb 19, 2013
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid contact structure with low aspect ratio contacts in a semico...
- Patent number 8,368,221
- Issue date Feb 5, 2013
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing patterning variability of trenches in metallization layer...
- Patent number 8,357,610
- Issue date Jan 22, 2013
- GLOBALFOUNDRIES Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test system and method of reducing damage in seed layers in metalli...
- Patent number 8,323,989
- Issue date Dec 4, 2012
- GLOBALFOUNDRIES, INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Built-in compliance in test structures for leakage and dielectric b...
- Patent number 8,314,625
- Issue date Nov 20, 2012
- GLOBALFOUNDRIES Inc.
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano imprint technique with increased flexibility with respect to a...
- Patent number 8,293,641
- Issue date Oct 23, 2012
- Advanced Micro Devices, Inc.
- Robert Seidel
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for increasing penetration depth of drain and source implant...
- Patent number 8,241,973
- Issue date Aug 14, 2012
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing contamination by providing a removable polymer p...
- Patent number 8,216,927
- Issue date Jul 10, 2012
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superior fill conditions in a replacement gate approach by using a...
- Patent number 8,198,147
- Issue date Jun 12, 2012
- GLOBALFOUNDRIES, INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local silicidation of via bottoms in metallization systems of semic...
- Patent number 8,193,086
- Issue date Jun 5, 2012
- GLOBALFOUNDRIES Inc.
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unified test structure for stress migration tests
- Patent number 8,174,010
- Issue date May 8, 2012
- GLOBALFOUNDRIES, INC.
- Frank Feustel
- G01 - MEASURING TESTING
Information Patent Grant
Method of selectively forming a conductive barrier layer by ALD
- Patent number 8,173,538
- Issue date May 8, 2012
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COIL INDUCTOR
- Publication number 20160260794
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES INC.
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER WITH IMPROVED PLATING CURRENT DISTRIBUTION
- Publication number 20160240473
- Publication date Aug 18, 2016
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING 3-D INTEGRATED SEMICONDUCTOR DEVICES HAVING INTE...
- Publication number 20160190104
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A DIE SEAL LEAKAGE DETECTION MATE...
- Publication number 20160111381
- Publication date Apr 21, 2016
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER WITH IMPROVED PLATING CURRENT DISTRIBUTION
- Publication number 20160079116
- Publication date Mar 17, 2016
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT BARS AND METAL...
- Publication number 20130154018
- Publication date Jun 20, 2013
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING PATTERNING VARIABILITY OF TRENCHES IN METALLIZATION LAYER...
- Publication number 20130130498
- Publication date May 23, 2013
- GLOBALFOUNDRIES INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESTRICTED STRESS REGIONS FORMED IN THE CONTACT LEVEL OF A SEMICOND...
- Publication number 20130084703
- Publication date Apr 4, 2013
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANT...
- Publication number 20120256240
- Publication date Oct 11, 2012
- Advanced Micro Devices, Inc.
- UWE GRIEBENOW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...
- Publication number 20120223388
- Publication date Sep 6, 2012
- GLOBALFOUNDRIES, INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedding Metal Silicide Contact Regions Reliably Into Highly Doped...
- Publication number 20120161210
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Performance Enhancement in Metallization Systems of Microstructure...
- Publication number 20120153479
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Self-Aligned Contact Bars and Metal...
- Publication number 20120153366
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Semiconductor Device Comprising a Protection Layer for R...
- Publication number 20120091535
- Publication date Apr 19, 2012
- GLOBALFOUNDRIES INC.
- Kai FROHBERG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-D Integrated Semiconductor Device Comprising Intermediate Heat Sp...
- Publication number 20120061818
- Publication date Mar 15, 2012
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT STRUCTURE LATERALLY ENCLOSED BY AN ISOLATION S...
- Publication number 20120021581
- Publication date Jan 26, 2012
- GLOBAL FOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Ultra Low-K (ULK) Metallization Stac...
- Publication number 20120001323
- Publication date Jan 5, 2012
- GLOBALFOUNDRIES INC.
- Torsten Huisinga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sophisticated Metallization Systems in Semiconductors Formed by Rem...
- Publication number 20120001343
- Publication date Jan 5, 2012
- GLOBALFOUNDRIES INC.
- Torsten Huisinga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Capacitor in the Metallization Sy...
- Publication number 20110241167
- Publication date Oct 6, 2011
- GLOBALFOUNDRIES INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD ADJUSTMENT FOR MOS DEVICES BY ADAPTING A SPACER WIDTH PRI...
- Publication number 20110223732
- Publication date Sep 15, 2011
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Reducing Contamination by Providing a Removable Polymer P...
- Publication number 20110201135
- Publication date Aug 18, 2011
- GLOBALFOUNDRIES INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO IMPRINT TECHNIQUE WITH INCREASED FLEXIBILITY WITH RESPECT TO A...
- Publication number 20110117723
- Publication date May 19, 2011
- Advanced Micro Devices, Inc.
- Robert Seidel
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
FABRICATING VIAS OF DIFFERENT SIZE OF A SEMICONDUCTOR DEVICE BY SPL...
- Publication number 20110104867
- Publication date May 5, 2011
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED INTERLAYER DIELECTRIC IN A METALLIZATION STRUCTURE OF A SE...
- Publication number 20110049727
- Publication date Mar 3, 2011
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...
- Publication number 20110049640
- Publication date Mar 3, 2011
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ASPECT RATIO CONTACT ELEMENT WITH SUPERIOR SHAPE IN A SEMICOND...
- Publication number 20100301486
- Publication date Dec 2, 2010
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED ELECTROMIGRATION PERFORMANCE OF COPPER LINES IN METALLIZAT...
- Publication number 20100289125
- Publication date Nov 18, 2010
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST SYSTEM AND METHOD OF REDUCING DAMAGE IN SEED LAYERS IN METALLI...
- Publication number 20100244028
- Publication date Sep 30, 2010
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING ADHESION OF INTERLAYER DIELECTRIC MATERIALS OF SEMICONDUC...
- Publication number 20100248463
- Publication date Sep 30, 2010
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE INCLUDING METAL PILL...
- Publication number 20100219527
- Publication date Sep 2, 2010
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS

Frank Feustel

Person

Patents Grantslast 30 patents

Methods of forming 3-D integrated semiconductor devices having inte...

Wafer with improved plating current distribution

Semiconductor structure including a die seal leakage detection mate...

Wafer with improved plating current distribution

3-D integrated semiconductor device comprising intermediate heat sp...

Metallization system of a semiconductor device including metal pill...

Embedding metal silicide contact regions reliably into highly doped...

Enhancing adhesion of interlayer dielectric materials of semiconduc...

Metallization system of a semiconductor device comprising extra-tap...

Restricted stress regions formed in the contact level of a semicond...

Semiconductor device including ultra low-K (ULK) metallization stac...

Method for increasing penetration depth of drain and source implant...

Semiconductor device comprising self-aligned contact bars and metal...

Semiconductor device including a hybrid metallization layer stack f...

Reducing copper defects during a wet chemical cleaning of exposed c...

Threshold adjustment for MOS devices by adapting a spacer width pri...

Semiconductor device comprising self-aligned contact bars and metal...

Sophisticated metallization systems in semiconductors formed by rem...

Method of forming a metallization system of a semiconductor device...

Hybrid contact structure with low aspect ratio contacts in a semico...

Reducing patterning variability of trenches in metallization layer...

Test system and method of reducing damage in seed layers in metalli...

Built-in compliance in test structures for leakage and dielectric b...

Nano imprint technique with increased flexibility with respect to a...

Method for increasing penetration depth of drain and source implant...

Method of reducing contamination by providing a removable polymer p...

Superior fill conditions in a replacement gate approach by using a...

Local silicidation of via bottoms in metallization systems of semic...

Unified test structure for stress migration tests

Method of selectively forming a conductive barrier layer by ALD

Patents Applicationslast 30 patents

COIL INDUCTOR

WAFER WITH IMPROVED PLATING CURRENT DISTRIBUTION

METHODS OF FORMING 3-D INTEGRATED SEMICONDUCTOR DEVICES HAVING INTE...

SEMICONDUCTOR STRUCTURE INCLUDING A DIE SEAL LEAKAGE DETECTION MATE...

WAFER WITH IMPROVED PLATING CURRENT DISTRIBUTION

SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT BARS AND METAL...

REDUCING PATTERNING VARIABILITY OF TRENCHES IN METALLIZATION LAYER...

RESTRICTED STRESS REGIONS FORMED IN THE CONTACT LEVEL OF A SEMICOND...

METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANT...

SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...

Embedding Metal Silicide Contact Regions Reliably Into Highly Doped...

Performance Enhancement in Metallization Systems of Microstructure...

Semiconductor Device Comprising Self-Aligned Contact Bars and Metal...

Method and Semiconductor Device Comprising a Protection Layer for R...

3-D Integrated Semiconductor Device Comprising Intermediate Heat Sp...

SELF-ALIGNED CONTACT STRUCTURE LATERALLY ENCLOSED BY AN ISOLATION S...

Semiconductor Device Including Ultra Low-K (ULK) Metallization Stac...

Sophisticated Metallization Systems in Semiconductors Formed by Rem...

Semiconductor Device Comprising a Capacitor in the Metallization Sy...

THRESHOLD ADJUSTMENT FOR MOS DEVICES BY ADAPTING A SPACER WIDTH PRI...

Method of Reducing Contamination by Providing a Removable Polymer P...

NANO IMPRINT TECHNIQUE WITH INCREASED FLEXIBILITY WITH RESPECT TO A...

FABRICATING VIAS OF DIFFERENT SIZE OF A SEMICONDUCTOR DEVICE BY SPL...

RECESSED INTERLAYER DIELECTRIC IN A METALLIZATION STRUCTURE OF A SE...

SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...

HIGH-ASPECT RATIO CONTACT ELEMENT WITH SUPERIOR SHAPE IN A SEMICOND...

ENHANCED ELECTROMIGRATION PERFORMANCE OF COPPER LINES IN METALLIZAT...

TEST SYSTEM AND METHOD OF REDUCING DAMAGE IN SEED LAYERS IN METALLI...

ENHANCING ADHESION OF INTERLAYER DIELECTRIC MATERIALS OF SEMICONDUC...

METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE INCLUDING METAL PILL...