Frank K. Baker Jr.

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory reads of weight values
- Patent number 10,825,512
- Issue date Nov 3, 2020
- NXP USA, INC.
- Frank Kelsey Baker
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
NVM architecture with OTA support
- Patent number 10,642,602
- Issue date May 5, 2020
- NXP USA, INC.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile RAM system
- Patent number 10,241,683
- Issue date Mar 26, 2019
- NXP USA, INC.
- Frank Kelly Baker
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory with read circuitry and method of operating
- Patent number 9,792,981
- Issue date Oct 17, 2017
- NXP USA, INC.
- Perry H. Pelley
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory using bi-directional resistive elements
- Patent number 9,779,807
- Issue date Oct 3, 2017
- NXP USA, INC.
- Perry H. Pelley
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory using bi-directional resistive elements
- Patent number 9,734,905
- Issue date Aug 15, 2017
- NXP USA, INC.
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory using bi-directional resistive elements
- Patent number 9,666,276
- Issue date May 30, 2017
- NXP USA, INC.
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile static random access memory (NVSRAM) having a shared port
- Patent number 9,530,501
- Issue date Dec 27, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Perry H. Pelley
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory (MRAM) and method of operation
- Patent number 9,520,173
- Issue date Dec 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Pseudo SRAM using resistive elements for non-volatile storage
- Patent number 9,401,207
- Issue date Jul 26, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory using bi-directional resistive elements
- Patent number 9,378,812
- Issue date Jun 28, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory using bi-directional resistive elements
- Patent number 9,318,158
- Issue date Apr 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory using bi-directional resistive elements and cap...
- Patent number 9,281,042
- Issue date Mar 8, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Perry H. Pelley
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded NVM in a HKMG process
- Patent number 9,276,008
- Issue date Mar 1, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jon D. Cheek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell and high-K and metal gate transistor...
- Patent number 9,129,996
- Issue date Sep 8, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Frank K. Baker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field focusing features in a ReRAM cell
- Patent number 9,118,008
- Issue date Aug 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field focusing features in a ReRAM cell
- Patent number 9,114,980
- Issue date Aug 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a logic transistor and a non-volatile memory (NVM)...
- Patent number 9,111,865
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Mehul D. Shroff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration technique using thermal oxide select gate dielectric fo...
- Patent number 9,087,913
- Issue date Jul 21, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded NVM in a HKMG process
- Patent number 9,054,220
- Issue date Jun 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jon D. Cheek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and logic integration
- Patent number 8,951,863
- Issue date Feb 10, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field focusing features in a ReRAM cell
- Patent number 8,779,405
- Issue date Jul 15, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating formation of a logic transistor and a non-volatile memo...
- Patent number 8,741,719
- Issue date Jun 3, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating formation of a replacement gate transistor and a non-vo...
- Patent number 8,716,089
- Issue date May 6, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erasing a non-volatile memory (NVM) system having error correction...
- Patent number 8,713,406
- Issue date Apr 29, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Fuchen Mu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory (NVM) and logic integration
- Patent number 8,669,158
- Issue date Mar 11, 2014
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration technique using thermal oxide select gate dielectric fo...
- Patent number 8,524,557
- Issue date Sep 3, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple partitioned emulated electrically erasable (EEE) memory an...
- Patent number 8,473,710
- Issue date Jun 25, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Ross S. Scouller
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Recovery scheme for an emulated memory system
- Patent number 8,438,327
- Issue date May 7, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Ross S. Scouller
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dielectric storage memory cell having high permittivity top dielect...
- Patent number 7,135,370
- Issue date Nov 14, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Frank Kelsey Baker
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NVM Architecture with OTA Support
- Publication number 20190179629
- Publication date Jun 13, 2019
- NXP USA, Inc.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEMS AND METHODS FOR CONTROLLING MEMORY ARRAY POWER CONSUMPTION
- Publication number 20180260014
- Publication date Sep 13, 2018
- NXP USA, Inc.
- Patrice M. PARRIS
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE RAM SYSTEM
- Publication number 20170115879
- Publication date Apr 27, 2017
- FREESCALE SEMICONDUCTOR, INC.
- FRANK KELLY BAKER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM)
- Publication number 20160188457
- Publication date Jun 30, 2016
- FREESCALE SEMICONDUCTOR, INC.
- PERRY H. PELLEY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PSEUDO SRAM USING RESISTIVE ELEMENTS FOR NON-VOLATILE STORAGE
- Publication number 20160172035
- Publication date Jun 16, 2016
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS
- Publication number 20160035415
- Publication date Feb 4, 2016
- FREESCALE SEMICONDUCTOR, INC.
- PERRY H. PELLEY
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS
- Publication number 20150348595
- Publication date Dec 3, 2015
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS
- Publication number 20150318024
- Publication date Nov 5, 2015
- FRANK K. BAKER
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded NVM in a HKMG Process
- Publication number 20150194439
- Publication date Jul 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jon D. Cheek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND HIGH-K AND METAL GATE TRANSISTOR...
- Publication number 20150072489
- Publication date Mar 12, 2015
- FRANK K. BAKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD FOCUSING FEATURES IN A RERAM CELL
- Publication number 20140295639
- Publication date Oct 2, 2014
- FREESCALE SEMICONDUCTOR, INC.
- FENG ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS
- Publication number 20140269008
- Publication date Sep 18, 2014
- FREESCALE SEMICONDUCTOR, INC.
- FRANK K. BAKER
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded NVM in a HKMG Process
- Publication number 20140225176
- Publication date Aug 14, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jon D. Cheek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A LOGIC TRANSISTOR AND A NON-VOLATILE MEMORY (NVM)...
- Publication number 20140120713
- Publication date May 1, 2014
- MEHUL D. SHROFF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMULATED ELECTRICALLY ERASABLE MEMORY HAVING AN ADDRESS RAM FOR DAT...
- Publication number 20130346680
- Publication date Dec 26, 2013
- Ross S. Scouller
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FIELD FOCUSING FEATURES IN A RERAM CELL
- Publication number 20130320285
- Publication date Dec 5, 2013
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD FOCUSING FEATURES IN A RERAM CELL
- Publication number 20130320284
- Publication date Dec 5, 2013
- Feng Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Application
ERASING A NON-VOLATILE MEMORY (NVM) SYSTEM HAVING ERROR CORRECTION...
- Publication number 20130290808
- Publication date Oct 31, 2013
- Fuchen Mu
- G11 - INFORMATION STORAGE
Information Patent Application
EMULATED ELECTRICALLY ERASABLE MEMORY HAVING SECTOR MANAGEMENT
- Publication number 20130268717
- Publication date Oct 10, 2013
- Ross S. Scouller
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATION TECHNIQUE USING THERMAL OXIDE SELECT GATE DIELECTRIC FO...
- Publication number 20130267074
- Publication date Oct 10, 2013
- Freescale Semiconductor Inc.
- Mark D. HALL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND LOGIC INTEGRATION
- Publication number 20130267072
- Publication date Oct 10, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION TECHNIQUE USING THERMAL OXIDE SELECT GATE DIELECTRIC FO...
- Publication number 20130217197
- Publication date Aug 22, 2013
- Freescale Semiconductor Inc.
- Mark D. HALL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND LOGIC INTEGRATION
- Publication number 20130178027
- Publication date Jul 11, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A NON-VOLATILE MEMORY CELL HAVING A FLOATING GATE
- Publication number 20130102143
- Publication date Apr 25, 2013
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric storage memory cell having high permittivity top dielect...
- Publication number 20060003529
- Publication date Jan 5, 2006
- Frank Kelsey Baker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory device with improved data retention and method...
- Publication number 20040159881
- Publication date Aug 19, 2004
- Gowrishankar L. Chindalore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-gate thin-film storage NVM cell
- Publication number 20040084710
- Publication date May 6, 2004
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Application
GATE VOLTAGE REDUCTION IN A MEMORY READ
- Publication number 20040085815
- Publication date May 6, 2004
- Erwin J. Prinz
- G11 - INFORMATION STORAGE
Information Patent Application
Erase of a memory having a non-conductive storage medium
- Publication number 20040080984
- Publication date Apr 29, 2004
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Application
Dielectric storage memory cell having high permittivity top dielect...
- Publication number 20040041192
- Publication date Mar 4, 2004
- Frank Kelsey Baker
- H01 - BASIC ELECTRIC ELEMENTS

Frank K. Baker Jr.

Person

Patents Grantslast 30 patents

Memory reads of weight values

NVM architecture with OTA support

Non-volatile RAM system

Memory with read circuitry and method of operating

Non-volatile memory using bi-directional resistive elements

Non-volatile memory using bi-directional resistive elements

Non-volatile memory using bi-directional resistive elements

Non-volatile static random access memory (NVSRAM) having a shared port

Magnetic random access memory (MRAM) and method of operation

Pseudo SRAM using resistive elements for non-volatile storage

Non-volatile memory using bi-directional resistive elements

Non-volatile memory using bi-directional resistive elements

Non-volatile memory using bi-directional resistive elements and cap...

Embedded NVM in a HKMG process

Non-volatile memory (NVM) cell and high-K and metal gate transistor...

Field focusing features in a ReRAM cell

Field focusing features in a ReRAM cell

Method of making a logic transistor and a non-volatile memory (NVM)...

Integration technique using thermal oxide select gate dielectric fo...

Embedded NVM in a HKMG process

Non-volatile memory (NVM) and logic integration

Field focusing features in a ReRAM cell

Integrating formation of a logic transistor and a non-volatile memo...

Integrating formation of a replacement gate transistor and a non-vo...

Erasing a non-volatile memory (NVM) system having error correction...

Non-volatile memory (NVM) and logic integration

Integration technique using thermal oxide select gate dielectric fo...

Multiple partitioned emulated electrically erasable (EEE) memory an...

Recovery scheme for an emulated memory system

Dielectric storage memory cell having high permittivity top dielect...

Patents Applicationslast 30 patents

NVM Architecture with OTA Support

SYSTEMS AND METHODS FOR CONTROLLING MEMORY ARRAY POWER CONSUMPTION

NON-VOLATILE RAM SYSTEM

NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM)

PSEUDO SRAM USING RESISTIVE ELEMENTS FOR NON-VOLATILE STORAGE

NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS

NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS

NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS

Embedded NVM in a HKMG Process

NON-VOLATILE MEMORY (NVM) CELL AND HIGH-K AND METAL GATE TRANSISTOR...

FIELD FOCUSING FEATURES IN A RERAM CELL

NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS

Embedded NVM in a HKMG Process

METHOD OF MAKING A LOGIC TRANSISTOR AND A NON-VOLATILE MEMORY (NVM)...

EMULATED ELECTRICALLY ERASABLE MEMORY HAVING AN ADDRESS RAM FOR DAT...

FIELD FOCUSING FEATURES IN A RERAM CELL

FIELD FOCUSING FEATURES IN A RERAM CELL

ERASING A NON-VOLATILE MEMORY (NVM) SYSTEM HAVING ERROR CORRECTION...

EMULATED ELECTRICALLY ERASABLE MEMORY HAVING SECTOR MANAGEMENT

INTEGRATION TECHNIQUE USING THERMAL OXIDE SELECT GATE DIELECTRIC FO...

NON-VOLATILE MEMORY (NVM) AND LOGIC INTEGRATION

INTEGRATION TECHNIQUE USING THERMAL OXIDE SELECT GATE DIELECTRIC FO...

NON-VOLATILE MEMORY (NVM) AND LOGIC INTEGRATION

METHOD OF MAKING A NON-VOLATILE MEMORY CELL HAVING A FLOATING GATE

Dielectric storage memory cell having high permittivity top dielect...

Non-volatile memory device with improved data retention and method...

Split-gate thin-film storage NVM cell

GATE VOLTAGE REDUCTION IN A MEMORY READ

Erase of a memory having a non-conductive storage medium

Dielectric storage memory cell having high permittivity top dielect...