Frank Pfirsch

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device having a gate dielectric stack that incl...
- Patent number 12,068,390
- Issue date Aug 20, 2024
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,610,986
- Issue date Mar 21, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,581,429
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor device and manufacturing method
- Patent number 11,575,032
- Issue date Feb 7, 2023
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact layers and manufacturing method
- Patent number 11,532,508
- Issue date Dec 20, 2022
- Infineon Technologies AG
- Holger Huesken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC IGBT
- Patent number 11,469,317
- Issue date Oct 11, 2022
- Infineon Technologies Austria AG
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
RC IGBT with an IGBT section and a diode section
- Patent number 11,398,472
- Issue date Jul 26, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method
- Patent number 11,289,595
- Issue date Mar 29, 2022
- Infineon Technologies Austria AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,264,459
- Issue date Mar 1, 2022
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die, semiconductor device and IGBT module
- Patent number 11,257,914
- Issue date Feb 22, 2022
- Infineon Technologies AG
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of processing a power semicon...
- Patent number 11,251,266
- Issue date Feb 15, 2022
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an edge termination region comprising a...
- Patent number 11,094,779
- Issue date Aug 17, 2021
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a cross-trench arrangement
- Patent number 11,075,290
- Issue date Jul 27, 2021
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,998,399
- Issue date May 4, 2021
- Infineon Technologies AG
- Alice Pei-Shan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power electronic arrangement
- Patent number 10,950,690
- Issue date Mar 16, 2021
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including first and second contact layers and...
- Patent number 10,950,494
- Issue date Mar 16, 2021
- Infineon Technologies AG
- Holger Huesken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage termination structure of a power semiconductor device
- Patent number 10,636,900
- Issue date Apr 28, 2020
- Infineon Technologies Austria AG
- Viktoryia Uhnevionak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor device
- Patent number 10,608,104
- Issue date Mar 31, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device and manufacturing method
- Patent number 10,566,462
- Issue date Feb 18, 2020
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit with a plurality of transistors and method for controlling...
- Patent number 10,547,291
- Issue date Jan 28, 2020
- Infineon Technologies Austria AG
- Franz Hirler
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor devices and methods for forming semiconductor devices
- Patent number 10,516,065
- Issue date Dec 24, 2019
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-compensation semiconductor device and a manufacturing method...
- Patent number 10,490,656
- Issue date Nov 26, 2019
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor body having a recombination zo...
- Patent number 10,439,025
- Issue date Oct 8, 2019
- Infineon Technologies Austria AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having fully depleted channel regions
- Patent number 10,367,057
- Issue date Jul 30, 2019
- Infineon Technologies AG
- Anton Mauder
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Power semiconductor device with dV/dt controllability and cross-tre...
- Patent number 10,304,952
- Issue date May 28, 2019
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with superjunction structure
- Patent number 10,249,746
- Issue date Apr 2, 2019
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,164,079
- Issue date Dec 25, 2018
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having fully depleted channel regions
- Patent number 10,134,835
- Issue date Nov 20, 2018
- Infineon Technologies AG
- Anton Mauder
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device with sensor potential in the active region
- Patent number 10,096,531
- Issue date Oct 9, 2018
- Infineon Technologies AG
- Christian Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with channelstopper and method for producing t...
- Patent number 10,038,052
- Issue date Jul 31, 2018
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20250015126
- Publication date Jan 9, 2025
- Infineon Technologies Austria AG
- Tobias Nardmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT and Method of Operating an RC IGBT
- Publication number 20250006729
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT
- Publication number 20250006727
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS
- Publication number 20240304709
- Publication date Sep 12, 2024
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20240213343
- Publication date Jun 27, 2024
- INFINEON TECHNOLOGIES AG
- Roland Dietmüller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD TERMINATION STRUCTURE FOR MONOLITHICALLY INTEGRATED POWER SEM...
- Publication number 20230387195
- Publication date Nov 30, 2023
- INFINEON TECHNOLOGIES AG
- Kwok-Wai Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Power Semiconductor Device and Method of Controlling a Du...
- Publication number 20230307531
- Publication date Sep 28, 2023
- INFINEON TECHNOLOGIES AG
- Roman BABURSKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING MODULE WITH INSULATED GATE BIPOLAR TRANSIST...
- Publication number 20230275576
- Publication date Aug 31, 2023
- INFINEON TECHNOLOGIES AG
- Roman BABURSKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING A GATE DIELECTRIC STACK THAT INCL...
- Publication number 20230035173
- Publication date Feb 2, 2023
- INFINEON TECHNOLOGIES AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20230010004
- Publication date Jan 12, 2023
- INFINEON TECHNOLOGIES AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING PROTRUDING REGION
- Publication number 20220406922
- Publication date Dec 22, 2022
- INFINEON TECHNOLOGIES AG
- Moritz Hauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT and Method of Producing an RC IGBT
- Publication number 20220392892
- Publication date Dec 8, 2022
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT and Method of Producing an RC IGBT
- Publication number 20220199614
- Publication date Jun 23, 2022
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210359117
- Publication date Nov 18, 2021
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch Having a Cross-Trench Structure
- Publication number 20210313460
- Publication date Oct 7, 2021
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT
- Publication number 20210296479
- Publication date Sep 23, 2021
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CONTACT LAYERS AND MANUFACTURING METHOD
- Publication number 20210202304
- Publication date Jul 1, 2021
- Holger Huesken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die, Semiconductor Device and IGBT Module
- Publication number 20210119003
- Publication date Apr 22, 2021
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT with an IGBT Section and a Diode Section
- Publication number 20210083081
- Publication date Mar 18, 2021
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method
- Publication number 20210020777
- Publication date Jan 21, 2021
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method
- Publication number 20200357883
- Publication date Nov 12, 2020
- INFINEON TECHNOLOGIES AG
- Manfred Pfaffenlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Processing a Power Semicon...
- Publication number 20200266269
- Publication date Aug 20, 2020
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20200194550
- Publication date Jun 18, 2020
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20200013854
- Publication date Jan 9, 2020
- INFINEON TECHNOLOGIES AG
- Alice Pei-Shan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Electronic Arrangement
- Publication number 20190386093
- Publication date Dec 19, 2019
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Cross-Trench Arrangement
- Publication number 20190273155
- Publication date Sep 5, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including First and Second Contact Layers and...
- Publication number 20190229013
- Publication date Jul 25, 2019
- Holger Huesken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING FULLY DEPLETED CHANNEL REGIONS
- Publication number 20190109188
- Publication date Apr 11, 2019
- INFINEON TECHNOLOGIES AG
- Anton Mauder
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
High Voltage Termination Structure of a Power Semiconductor Device
- Publication number 20190109230
- Publication date Apr 11, 2019
- Infineon Technologies Austria AG
- Viktoryia Uhnevionak
- H01 - BASIC ELECTRIC ELEMENTS

Frank Pfirsch

Person

Patents Grantslast 30 patents

Power semiconductor device having a gate dielectric stack that incl...

Power semiconductor switch having a cross-trench structure

Power semiconductor switch having a cross-trench structure

Vertical power semiconductor device and manufacturing method

Semiconductor device having contact layers and manufacturing method

RC IGBT

RC IGBT with an IGBT section and a diode section

Power semiconductor device and method

Power semiconductor device

Semiconductor die, semiconductor device and IGBT module

Power semiconductor device and method of processing a power semicon...

Semiconductor device having an edge termination region comprising a...

Power semiconductor device having a cross-trench arrangement

Power semiconductor device

Power electronic arrangement

Semiconductor device including first and second contact layers and...

High voltage termination structure of a power semiconductor device

Trench transistor device

Bipolar semiconductor device and manufacturing method

Circuit with a plurality of transistors and method for controlling...

Semiconductor devices and methods for forming semiconductor devices

Charge-compensation semiconductor device and a manufacturing method...

Method for producing a semiconductor body having a recombination zo...

Power semiconductor device having fully depleted channel regions

Power semiconductor device with dV/dt controllability and cross-tre...

Bipolar transistor with superjunction structure

Power semiconductor device

Power semiconductor device having fully depleted channel regions

Semiconductor device with sensor potential in the active region

Semiconductor device with channelstopper and method for producing t...

Patents Applicationslast 30 patents

Power Semiconductor Device and Method of Producing a Power Semicond...

RC IGBT and Method of Operating an RC IGBT

IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS

Power Semiconductor Device and Method of Producing a Power Semicond...

FIELD TERMINATION STRUCTURE FOR MONOLITHICALLY INTEGRATED POWER SEM...

Dual Gate Power Semiconductor Device and Method of Controlling a Du...

SEMICONDUCTOR SWITCHING MODULE WITH INSULATED GATE BIPOLAR TRANSIST...

POWER SEMICONDUCTOR DEVICE HAVING A GATE DIELECTRIC STACK THAT INCL...

Power Semiconductor Device and Method of Producing a Power Semicond...

SEMICONDUCTOR DEVICE INCLUDING PROTRUDING REGION

RC IGBT and Method of Producing an RC IGBT

RC IGBT and Method of Producing an RC IGBT

VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Power Semiconductor Switch Having a Cross-Trench Structure

RC IGBT

SEMICONDUCTOR DEVICE HAVING CONTACT LAYERS AND MANUFACTURING METHOD

Semiconductor Die, Semiconductor Device and IGBT Module

RC IGBT with an IGBT Section and a Diode Section

Power Semiconductor Device and Method

Power Semiconductor Device and Method

Power Semiconductor Device and Method of Processing a Power Semicon...

Power Semiconductor Device

Power Semiconductor Device

Power Electronic Arrangement

Power Semiconductor Device Having a Cross-Trench Arrangement

Semiconductor Device Including First and Second Contact Layers and...

POWER SEMICONDUCTOR DEVICE HAVING FULLY DEPLETED CHANNEL REGIONS

High Voltage Termination Structure of a Power Semiconductor Device