Franz-Josef NIEDERNOSTHEIDE

Person

Hagen am Teutoburger Wald, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Voltage-controlled switching device with resistive path
- Patent number 12,266,680
- Issue date Apr 1, 2025
- Infineon Technologies Dresden GmbH & Co. KG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Actively tracking switching speed control and regulating switching...
- Patent number 12,088,283
- Issue date Sep 10, 2024
- Infineon Technologies AG
- Zheming Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gate control method of MOS-gated power device
- Patent number 11,876,509
- Issue date Jan 16, 2024
- Infineon Technologies AG
- Guang Zeng
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,848,377
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing oscillation during turn on of a power transisto...
- Patent number 11,843,368
- Issue date Dec 12, 2023
- Infineon Technologies AG
- Zheming Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Actively tracking switching speed control and regulating switching...
- Patent number 11,770,119
- Issue date Sep 26, 2023
- Infineon Technologies AG
- Zheming Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for reducing oscillation during turn on of a power transisto...
- Patent number 11,595,035
- Issue date Feb 28, 2023
- Infineon Technologies AG
- Zheming Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Actively tracking switching speed control and regulating switching...
- Patent number 11,444,613
- Issue date Sep 13, 2022
- Infineon Technologies AG
- Zheming Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device having active and inactive semiconductor mesas
- Patent number 11,309,410
- Issue date Apr 19, 2022
- Infineon Technologies AG
- Maria Cotorogea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,276,772
- Issue date Mar 15, 2022
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,264,459
- Issue date Mar 1, 2022
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die, semiconductor device and IGBT module
- Patent number 11,257,914
- Issue date Feb 22, 2022
- Infineon Technologies AG
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having fully depleted channel regions
- Patent number 11,171,202
- Issue date Nov 9, 2021
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device comprising first and...
- Patent number 11,081,544
- Issue date Aug 3, 2021
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor device having a fin structure
- Patent number 11,038,016
- Issue date Jun 15, 2021
- Infineon Technologies AG
- Christian Philipp Sandow
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Actively tracking switching speed control of a power transistor
- Patent number 11,031,929
- Issue date Jun 8, 2021
- Infineon Technologies AG
- Robert Maier
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,018,249
- Issue date May 25, 2021
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device
- Patent number 10,957,764
- Issue date Mar 23, 2021
- Infineon Technologies AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with fully depletable n- and p-channel regions
- Patent number 10,950,718
- Issue date Mar 16, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor component having a channel sto...
- Patent number 10,943,974
- Issue date Mar 9, 2021
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with fully depletable n- and p-channel regions
- Patent number 10,903,347
- Issue date Jan 26, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar Transistor device having a fin structure
- Patent number 10,748,995
- Issue date Aug 18, 2020
- Infineon Technologies AG
- Christian Philipp Sandow
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having an active trench and a body trench
- Patent number 10,680,089
- Issue date Jun 9, 2020
- Infineon Technologies AG
- Maria Cotorogea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having different channel regions
- Patent number 10,672,767
- Issue date Jun 2, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor transistor
- Patent number 10,665,706
- Issue date May 26, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 10,580,653
- Issue date Mar 3, 2020
- Infineon Technologies AG
- Franz-Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device and manufacturing method
- Patent number 10,566,462
- Issue date Feb 18, 2020
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with high current robustness
- Patent number 10,483,384
- Issue date Nov 19, 2019
- Infineon Technologies AG
- Riteshkumar Bhojani
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transistor device
- Patent number 10,461,739
- Issue date Oct 29, 2019
- Infineon Technologies Austria AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having cells with channel regions of dif...
- Patent number 10,453,918
- Issue date Oct 22, 2019
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS
- Publication number 20240304709
- Publication date Sep 12, 2024
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20240213343
- Publication date Jun 27, 2024
- INFINEON TECHNOLOGIES AG
- Roland Dietmüller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTROL METHOD OF MOS-GATED POWER DEVICE
- Publication number 20240088890
- Publication date Mar 14, 2024
- INFINEON TECHNOLOGIES AG
- Guang ZENG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GATE CONTROL METHOD OF MOS-GATED POWER DEVICE
- Publication number 20240039526
- Publication date Feb 1, 2024
- INFINEON TECHNOLOGIES AG
- Guang ZENG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ACTIVELY TRACKING SWITCHING SPEED CONTROL AND REGULATING SWITCHING...
- Publication number 20230353135
- Publication date Nov 2, 2023
- INFINEON TECHNOLOGIES AG
- Zheming LI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHOD FOR REDUCING OSCILLATION DURING TURN ON OF A POWER TRANSISTO...
- Publication number 20230088339
- Publication date Mar 23, 2023
- INFINEON TECHNOLOGIES AG
- Zheming LI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHOD FOR REDUCING OSCILLATION DURING TURN ON OF A POWER TRANSISTO...
- Publication number 20230061697
- Publication date Mar 2, 2023
- INFINEON TECHNOLOGIES AG
- Zheming LI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ACTIVELY TRACKING SWITCHING SPEED CONTROL AND REGULATING SWITCHING...
- Publication number 20220393675
- Publication date Dec 8, 2022
- INFINEON TECHNOLOGIES AG
- Zheming LI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Voltage-Controlled Switching Device with Resistive Path
- Publication number 20220102478
- Publication date Mar 31, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Nanometer-Scale Structure
- Publication number 20220059650
- Publication date Feb 24, 2022
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20220013625
- Publication date Jan 13, 2022
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with Edge Termination Region
- Publication number 20210257489
- Publication date Aug 19, 2021
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die, Semiconductor Device and IGBT Module
- Publication number 20210119003
- Publication date Apr 22, 2021
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Device Having a Fin Structure
- Publication number 20200350402
- Publication date Nov 5, 2020
- Christian Philipp Sandow
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Device Having Active and Inactive Semiconductor Mesas
- Publication number 20200295168
- Publication date Sep 17, 2020
- INFINEON TECHNOLOGIES AG
- Maria Cotorogea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20200259007
- Publication date Aug 13, 2020
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20200194550
- Publication date Jun 18, 2020
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Different Channel Regions
- Publication number 20190371794
- Publication date Dec 5, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Device Having a Fin Structure
- Publication number 20190333991
- Publication date Oct 31, 2019
- Christian Philipp Sandow
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Device Having an Active Trench and a Body Trench
- Publication number 20190319123
- Publication date Oct 17, 2019
- INFINEON TECHNOLOGIES AG
- Maria Cotorogea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Transistor
- Publication number 20190296135
- Publication date Sep 26, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Fully Depleted Channel Regions
- Publication number 20190267447
- Publication date Aug 29, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with Edge Termination Region
- Publication number 20190237575
- Publication date Aug 1, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Semiconductor Component Having a Channel Sto...
- Publication number 20190198610
- Publication date Jun 27, 2019
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with Fully Depletable n- and p-Channel Regions
- Publication number 20190189789
- Publication date Jun 20, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Comprising First and...
- Publication number 20190165090
- Publication date May 30, 2019
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING FULLY DEPLETED CHANNEL REGIONS
- Publication number 20190109188
- Publication date Apr 11, 2019
- INFINEON TECHNOLOGIES AG
- Anton Mauder
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor Device Having an Active Trench and a Body Trench
- Publication number 20190103480
- Publication date Apr 4, 2019
- Maria Cotorogea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Cells with Channel Regions of Dif...
- Publication number 20190081142
- Publication date Mar 14, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Different Channel Regions
- Publication number 20180366464
- Publication date Dec 20, 2018
- INFINEON TECHNOLOGIES AG
- Anton Mauder
- H03 - BASIC ELECTRONIC CIRCUITRY

Franz-Josef NIEDERNOSTHEIDE

Person

Patents Grantslast 30 patents

Voltage-controlled switching device with resistive path

Actively tracking switching speed control and regulating switching...

Gate control method of MOS-gated power device

Semiconductor component with edge termination region

Method for reducing oscillation during turn on of a power transisto...

Actively tracking switching speed control and regulating switching...

Method for reducing oscillation during turn on of a power transisto...

Actively tracking switching speed control and regulating switching...

Semiconductor device having active and inactive semiconductor mesas

Power semiconductor device

Power semiconductor device

Semiconductor die, semiconductor device and IGBT module

Power semiconductor device having fully depleted channel regions

Method of manufacturing a semiconductor device comprising first and...

Insulated gate bipolar transistor device having a fin structure

Actively tracking switching speed control of a power transistor

Semiconductor component with edge termination region

Vertical semiconductor device

IGBT with fully depletable n- and p-channel regions

Method for producing a semiconductor component having a channel sto...

IGBT with fully depletable n- and p-channel regions

Insulated gate bipolar Transistor device having a fin structure

Semiconductor device having an active trench and a body trench

Power semiconductor device having different channel regions

Power semiconductor transistor

Method of forming a semiconductor device

Bipolar semiconductor device and manufacturing method

Transistor device with high current robustness

Transistor device

Power semiconductor device having cells with channel regions of dif...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS

Power Semiconductor Device and Method of Producing a Power Semicond...

GATE CONTROL METHOD OF MOS-GATED POWER DEVICE

GATE CONTROL METHOD OF MOS-GATED POWER DEVICE

ACTIVELY TRACKING SWITCHING SPEED CONTROL AND REGULATING SWITCHING...

METHOD FOR REDUCING OSCILLATION DURING TURN ON OF A POWER TRANSISTO...

METHOD FOR REDUCING OSCILLATION DURING TURN ON OF A POWER TRANSISTO...

ACTIVELY TRACKING SWITCHING SPEED CONTROL AND REGULATING SWITCHING...

Voltage-Controlled Switching Device with Resistive Path

Power Semiconductor Device Having Nanometer-Scale Structure

VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Semiconductor Component with Edge Termination Region

Semiconductor Die, Semiconductor Device and IGBT Module

Insulated Gate Bipolar Transistor Device Having a Fin Structure

Semiconductor Device Having Active and Inactive Semiconductor Mesas

Power Semiconductor Device

Power Semiconductor Device

Power Semiconductor Device Having Different Channel Regions

Insulated Gate Bipolar Transistor Device Having a Fin Structure

Semiconductor Device Having an Active Trench and a Body Trench

Power Semiconductor Transistor

Power Semiconductor Device Having Fully Depleted Channel Regions

Semiconductor Component with Edge Termination Region

Method for Producing a Semiconductor Component Having a Channel Sto...

IGBT with Fully Depletable n- and p-Channel Regions

Method of Manufacturing a Semiconductor Device Comprising First and...

POWER SEMICONDUCTOR DEVICE HAVING FULLY DEPLETED CHANNEL REGIONS

Semiconductor Device Having an Active Trench and a Body Trench

Power Semiconductor Device Having Cells with Channel Regions of Dif...

Power Semiconductor Device Having Different Channel Regions