Franz Kreupl

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical interconnect structure, memory device and associated produ...
- Patent number 9,177,995
- Issue date Nov 3, 2015
- Infineon Technologies AG
- Martin Gutsche
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor chip with integrated via
- Patent number 8,912,654
- Issue date Dec 16, 2014
- Qimonda AG
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom electrodes for use with metal oxide resistivity switching la...
- Patent number 8,772,749
- Issue date Jul 8, 2014
- Sandisk 3D LLC
- Deepak Chandra Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory devices with improved resistive changing elements
- Patent number 8,742,387
- Issue date Jun 3, 2014
- Qimonda AG
- Thomas Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with resistance-switching layers
- Patent number 8,737,111
- Issue date May 27, 2014
- Sandisk 3D LLC
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrical circuit with a nanostructure and method for producing a...
- Patent number 8,664,657
- Issue date Mar 4, 2014
- Qimonda AG
- Georg Duesberg
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Composition of memory cell with resistance-switching layers
- Patent number 8,520,424
- Issue date Aug 27, 2013
- Sandisk 3D LLC
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
P-/Metal floating gate non-volatile storage element
- Patent number 8,503,229
- Issue date Aug 6, 2013
- SanDisk Technologies Inc.
- Sanghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical interconnect structure, memory device and associated produ...
- Patent number 8,420,526
- Issue date Apr 16, 2013
- Infineon Technologies AG
- Martin Gutsche
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cell with resistance-switching layers and lateral arrangement
- Patent number 8,395,926
- Issue date Mar 12, 2013
- Sandisk 3D LLC
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with resistance-switching layers including breakdown layer
- Patent number 8,395,927
- Issue date Mar 12, 2013
- Sandisk 3D LLC
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Bottom electrodes for use with metal oxide resistivity switching la...
- Patent number 8,354,660
- Issue date Jan 15, 2013
- Sandisk 3D LLC
- Deepak Chandra Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power switch having nanowires
- Patent number 8,319,259
- Issue date Nov 27, 2012
- Infineon Technologies AG
- Franz Kreupl
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical interconnect structure, memory device and associated produ...
- Patent number 8,298,932
- Issue date Oct 30, 2012
- Infineon Technologies AG
- Martin Gutsche
Information Patent Grant
Integrated circuit including doped semiconductor line having conduc...
- Patent number 8,254,166
- Issue date Aug 28, 2012
- Qimonda AG
- Ulrich Klosterman
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for elimination or reduction of oxide and/or soot depositio...
- Patent number 8,216,639
- Issue date Jul 10, 2012
- Qimonda AG
- Maik Liebau
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Modifiable gate stack memory element
- Patent number 8,097,872
- Issue date Jan 17, 2012
- Rising Silicon, Inc.
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including doped semiconductor line having conduc...
- Patent number 8,084,759
- Issue date Dec 27, 2011
- Qimonda AG
- Ulrich Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit
- Patent number 8,063,394
- Issue date Nov 22, 2011
- Qimonda AG
- Dieter Andres
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical interconnect structure, memory device and associated produ...
- Patent number 7,998,858
- Issue date Aug 16, 2011
- Infineon Technologies AG
- Martin Gutsche
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Modifiable gate stack memory element
- Patent number 7,915,603
- Issue date Mar 29, 2011
- Qimonda AG
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of producing a layer arrangement, method of producing an ele...
- Patent number 7,910,210
- Issue date Mar 22, 2011
- Rising Silicon, Inc.
- Franz Kreupl
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuit having a magnetic tunnel junction device and method
- Patent number 7,902,616
- Issue date Mar 8, 2011
- Qimonda AG
- Ulrich Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon filament memory and fabrication method
- Patent number 7,894,253
- Issue date Feb 22, 2011
- Qimonda AG
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive sensor with tunnel barrier and method
- Patent number 7,863,700
- Issue date Jan 4, 2011
- Qimonda AG
- Franz Kreupl
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Carbon diode array for resistivity changing memories
- Patent number 7,768,016
- Issue date Aug 3, 2010
- Qimonda AG
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Carbon memory
- Patent number 7,728,405
- Issue date Jun 1, 2010
- Qimonda AG
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically integrated field-effect transistor having a nanostructur...
- Patent number 7,709,827
- Issue date May 4, 2010
- Qimonda, AG
- Andrew Graham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a nanoelement field effect transistor with s...
- Patent number 7,646,045
- Issue date Jan 12, 2010
- Qimonda AG
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube array and method for producing a nanotube array
- Patent number 7,635,867
- Issue date Dec 22, 2009
- Infineon Technologies AG
- Andrew Graham
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LA...
- Publication number 20130126821
- Publication date May 23, 2013
- SanDisk 3D LLC
- Deepak Chandra Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INTERCONNECT STRUCTURE, MEMORY DEVICE AND ASSOCIATED PRODU...
- Publication number 20120305873
- Publication date Dec 6, 2012
- INFINEON TECHNOLOGIES AG
- Martin Gutsche
- B82 - NANO-TECHNOLOGY
Information Patent Application
P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT
- Publication number 20120243337
- Publication date Sep 27, 2012
- Sanghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cell With Resistance-Switching Layers And Lateral Arrangement
- Publication number 20110310654
- Publication date Dec 22, 2011
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Application
Composition Of Memory Cell With Resistance-Switching Layers
- Publication number 20110310655
- Publication date Dec 22, 2011
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cell With Resistance-Switching Layers
- Publication number 20110310653
- Publication date Dec 22, 2011
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cell With Resistance-Switching Layers Including Breakdown Layer
- Publication number 20110310656
- Publication date Dec 22, 2011
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL INTERCONNECT STRUCTURE, MEMORY DEVICE AND ASSOCIATED PRODU...
- Publication number 20110248234
- Publication date Oct 13, 2011
- INFINEON TECHNOLOGIES AG
- Martin Gutsche
- B82 - NANO-TECHNOLOGY
Information Patent Application
BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LA...
- Publication number 20110227020
- Publication date Sep 22, 2011
- Deepak Chandra Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LA...
- Publication number 20110227028
- Publication date Sep 22, 2011
- Deepak Chandra Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit
- Publication number 20100084741
- Publication date Apr 8, 2010
- Dieter Andres
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING DOPED SEMICONDUCTOR LINE HAVING CONDUC...
- Publication number 20100061140
- Publication date Mar 11, 2010
- QIMONDA AG
- Ulrich Klostermann
- G11 - INFORMATION STORAGE
Information Patent Application
INFORMATION STORAGE AND RETRIEVAL SYSTEM
- Publication number 20100057685
- Publication date Mar 4, 2010
- QIMONDA AG
- Gerhard Luhn
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE SENSOR WITH TUNNEL BARRIER AND METHOD
- Publication number 20090322319
- Publication date Dec 31, 2009
- QIMONDA AG
- Franz Kreupl
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED CIRCUIT HAVING A MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD
- Publication number 20090321860
- Publication date Dec 31, 2009
- QIMONDA AG
- Ulrich Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Memory Devices with Improved Resistive Changing Elements
- Publication number 20090321706
- Publication date Dec 31, 2009
- QIMONDA AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH DIFFERENT TYPES OF PHASE CHANGE MEMORY
- Publication number 20090268513
- Publication date Oct 29, 2009
- Luca De Ambroggi
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CHIP WITH INTEGRATED VIA
- Publication number 20090256258
- Publication date Oct 15, 2009
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMUNICATION SYSTEM
- Publication number 20090213830
- Publication date Aug 27, 2009
- QIMONDA AG
- Georg Duesberg
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATED CIRCUIT DEVICE COMPRISING CONDUCTIVE VIAS AND METHOD OF...
- Publication number 20090212438
- Publication date Aug 27, 2009
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon Diode Array for Resistivity Changing Memories
- Publication number 20090201715
- Publication date Aug 13, 2009
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Application
ERROR CORRECTION IN AN INTEGRATED CIRCUIT WITH AN ARRAY OF MEMORY C...
- Publication number 20090199043
- Publication date Aug 6, 2009
- Peter Schrogmeier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUIT INCLUDING DOPED SEMICONDUCTOR LINE HAVING CONDUC...
- Publication number 20090108248
- Publication date Apr 30, 2009
- QIMONDA AG
- ULRICH KLOSTERMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING MEMORY HAVING LIMITED READ
- Publication number 20090046499
- Publication date Feb 19, 2009
- QIMONDA AG
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Application
Stacked Circuits
- Publication number 20090026524
- Publication date Jan 29, 2009
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE VIAS
- Publication number 20080315430
- Publication date Dec 25, 2008
- QIMONDA AG
- WALTER M. WEBER
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Power Switch and Method for Producing a Semiconductor...
- Publication number 20080296557
- Publication date Dec 4, 2008
- Franz Kreupl
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for Fabricating a Nanoelement Field Effect Transistor with S...
- Publication number 20080296559
- Publication date Dec 4, 2008
- Franz Kreupl
- B82 - NANO-TECHNOLOGY
Information Patent Application
Carbon memory
- Publication number 20080217732
- Publication date Sep 11, 2008
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING AN INTEGRATED CIRCUIT HAVING A VIA HOLE
- Publication number 20080164611
- Publication date Jul 10, 2008
- QIMONDA AG
- Harry Hedler
- H01 - BASIC ELECTRIC ELEMENTS

Franz Kreupl

Person

Patents Grantslast 30 patents

Vertical interconnect structure, memory device and associated produ...

Semiconductor chip with integrated via

Bottom electrodes for use with metal oxide resistivity switching la...

Resistive memory devices with improved resistive changing elements

Memory cell with resistance-switching layers

Electrical circuit with a nanostructure and method for producing a...

Composition of memory cell with resistance-switching layers

P-/Metal floating gate non-volatile storage element

Vertical interconnect structure, memory device and associated produ...

Memory cell with resistance-switching layers and lateral arrangement

Memory cell with resistance-switching layers including breakdown layer

Bottom electrodes for use with metal oxide resistivity switching la...

Semiconductor power switch having nanowires

Vertical interconnect structure, memory device and associated produ...

Integrated circuit including doped semiconductor line having conduc...

Methods for elimination or reduction of oxide and/or soot depositio...

Modifiable gate stack memory element

Integrated circuit including doped semiconductor line having conduc...

Integrated circuit

Vertical interconnect structure, memory device and associated produ...

Modifiable gate stack memory element

Method of producing a layer arrangement, method of producing an ele...

Integrated circuit having a magnetic tunnel junction device and method

Carbon filament memory and fabrication method

Magnetoresistive sensor with tunnel barrier and method

Carbon diode array for resistivity changing memories

Carbon memory

Vertically integrated field-effect transistor having a nanostructur...

Method for fabricating a nanoelement field effect transistor with s...

Nanotube array and method for producing a nanotube array

Patents Applicationslast 30 patents

BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LA...

VERTICAL INTERCONNECT STRUCTURE, MEMORY DEVICE AND ASSOCIATED PRODU...

P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT

Memory Cell With Resistance-Switching Layers And Lateral Arrangement

Composition Of Memory Cell With Resistance-Switching Layers

Memory Cell With Resistance-Switching Layers

Memory Cell With Resistance-Switching Layers Including Breakdown Layer

VERTICAL INTERCONNECT STRUCTURE, MEMORY DEVICE AND ASSOCIATED PRODU...

BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LA...

BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LA...

Integrated Circuit

INTEGRATED CIRCUIT INCLUDING DOPED SEMICONDUCTOR LINE HAVING CONDUC...

INFORMATION STORAGE AND RETRIEVAL SYSTEM

MAGNETORESISTIVE SENSOR WITH TUNNEL BARRIER AND METHOD

INTEGRATED CIRCUIT HAVING A MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD

Resistive Memory Devices with Improved Resistive Changing Elements

MEMORY DEVICE WITH DIFFERENT TYPES OF PHASE CHANGE MEMORY

SEMICONDUCTOR CHIP WITH INTEGRATED VIA

COMMUNICATION SYSTEM

INTEGRATED CIRCUIT DEVICE COMPRISING CONDUCTIVE VIAS AND METHOD OF...

Carbon Diode Array for Resistivity Changing Memories

ERROR CORRECTION IN AN INTEGRATED CIRCUIT WITH AN ARRAY OF MEMORY C...

INTEGRATED CIRCUIT INCLUDING DOPED SEMICONDUCTOR LINE HAVING CONDUC...

INTEGRATED CIRCUIT INCLUDING MEMORY HAVING LIMITED READ

Stacked Circuits

NANOWIRE VIAS

Semiconductor Power Switch and Method for Producing a Semiconductor...

Method for Fabricating a Nanoelement Field Effect Transistor with S...

Carbon memory

METHOD FOR MAKING AN INTEGRATED CIRCUIT HAVING A VIA HOLE