Frederick B. Jenne

Person

Los Gatos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of ono integration into logic CMOS flow
- Patent number 12,048,162
- Issue date Jul 23, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 11,784,243
- Issue date Oct 10, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of ono integration into logic CMOS flow
- Patent number 11,569,254
- Issue date Jan 31, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Sonos stack with split nitride memory layer
- Patent number 11,257,912
- Issue date Feb 22, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 11,222,965
- Issue date Jan 11, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,903,342
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,903,068
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,896,973
- Issue date Jan 19, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
SONOS stack with split nitride memory layer
- Patent number 10,790,364
- Issue date Sep 29, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ONO integration into logic CMOS flow
- Patent number 10,700,083
- Issue date Jun 30, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS ONO stack scaling
- Patent number 10,699,901
- Issue date Jun 30, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Frederick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,374,067
- Issue date Aug 6, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile charge trap memory device having a deuterated layer in...
- Patent number 10,263,087
- Issue date Apr 16, 2019
- Cypress Semiconductor Corporation
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS stack with split nitride memory layer
- Patent number 10,199,229
- Issue date Feb 5, 2019
- Cypress Semiconductor Corporation
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile charge trap memory device having a deuterated layer in...
- Patent number 10,079,314
- Issue date Sep 18, 2018
- Cypress Semiconductor Corporation
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory architecture having two independently controlled voltage pumps
- Patent number 10,032,517
- Issue date Jul 24, 2018
- Cypress Semiconductor Corporation
- Ryan Tasuo Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
SONOS ONO stack scaling
- Patent number 9,997,641
- Issue date Jun 12, 2018
- Cypress Semiconductor Corporation
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory architecture having two independently controlled voltage pumps
- Patent number 9,899,089
- Issue date Feb 20, 2018
- Cypress Semiconductor Corporation
- Ryan Tasuo Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
SONOS stack with split nitride memory layer
- Patent number 9,793,125
- Issue date Oct 17, 2017
- Cypress Semiconductor Corporation
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
SONOS stack with split nitride memory layer
- Patent number 9,748,103
- Issue date Aug 29, 2017
- Cypress Semiconductor Corporation
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile charge trap memory device having a deuterated layer in...
- Patent number 9,741,803
- Issue date Aug 22, 2017
- Cypress Semiconductor Corporation
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile charge trap memory device having a deuterated layer in...
- Patent number 9,716,153
- Issue date Jul 25, 2017
- Cypress Semiconductor Corporation
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 9,449,831
- Issue date Sep 20, 2016
- Cypress Semiconductor Corporation
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 9,355,849
- Issue date May 31, 2016
- Cypress Semiconductor Corporation
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 9,349,824
- Issue date May 24, 2016
- Cypress Semiconductor Corporation
- Sagy Charel Levy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitridation oxidation of tunneling layer for improved SONOS speed a...
- Patent number 9,349,877
- Issue date May 24, 2016
- Cypress Semiconductor Corporation
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS ONO stack scaling
- Patent number 9,299,568
- Issue date Mar 29, 2016
- Cypress Semiconductor Corporation
- Fredrick Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ONO integration into logic CMOS flow
- Patent number 9,102,522
- Issue date Aug 11, 2015
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
SONOS stack with split nitride memory layer
- Patent number 9,105,512
- Issue date Aug 11, 2015
- Cypress Semiconductor Corporation
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Simultaneously forming a dielectric layer in MOS and ONO device reg...
- Patent number 9,023,707
- Issue date May 5, 2015
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20240234550
- Publication date Jul 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW
- Publication number 20230209830
- Publication date Jun 29, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20230074163
- Publication date Mar 9, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20230017648
- Publication date Jan 19, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- G11 - INFORMATION STORAGE
Information Patent Application
SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER
- Publication number 20220173216
- Publication date Jun 2, 2022
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20220093773
- Publication date Mar 24, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20210249254
- Publication date Aug 12, 2021
- Sagy Charel Levy
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW
- Publication number 20210188629
- Publication date Jun 24, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20210104402
- Publication date Apr 8, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER
- Publication number 20210074822
- Publication date Mar 11, 2021
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20200144399
- Publication date May 7, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN...
- Publication number 20190319104
- Publication date Oct 17, 2019
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS Stack With Split Nitride Memory Layer
- Publication number 20190198329
- Publication date Jun 27, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20180366563
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20180366564
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20180351003
- Publication date Dec 6, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARCHITECTURE HAVING TWO INDEPENDENTLY CONTROLLED VOLTAGE PUMPS
- Publication number 20180166140
- Publication date Jun 14, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Ryan Tasuo Hirose
- G11 - INFORMATION STORAGE
Information Patent Application
SONOS Stack With Split Nitride Memory Layer
- Publication number 20180053657
- Publication date Feb 22, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN...
- Publication number 20170352732
- Publication date Dec 7, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20160308033
- Publication date Oct 20, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy LEVY
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Charge Trap Memory Device Having A Deuterated Layer In...
- Publication number 20160308009
- Publication date Oct 20, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy LEVY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20160300959
- Publication date Oct 13, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20160300724
- Publication date Oct 13, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS Stack With Split Nitride Memory Layer
- Publication number 20160141180
- Publication date May 19, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARCHITECTURE HAVING TWO INDEPENDENTLY CONTROLLED VOLTAGE PUMPS
- Publication number 20160005475
- Publication date Jan 7, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Ryan Tasuo Hirose
- G11 - INFORMATION STORAGE
Information Patent Application
SONOS Stack With Split Nitride Memory Layer
- Publication number 20140374813
- Publication date Dec 25, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20140284696
- Publication date Sep 25, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Charel Levy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nonvolatile Charge Trap Memory Device Having a Deuterated Layer in...
- Publication number 20140264550
- Publication date Sep 18, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEUTERATED FILM ENCAPSULATION OF NONVOLATILE CHARGE TRAP MEMORY DEVICE
- Publication number 20140225116
- Publication date Aug 14, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20130307052
- Publication date Nov 21, 2013
- CYPRESS SEMICONDUCTOR CORPORATION
- Fredrick JENNE
- H01 - BASIC ELECTRIC ELEMENTS

Frederick B. Jenne

Person

Patents Grantslast 30 patents

Method of ono integration into logic CMOS flow

Oxide-nitride-oxide stack having multiple oxynitride layers

Method of ono integration into logic CMOS flow

Sonos stack with split nitride memory layer

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

SONOS stack with split nitride memory layer

Method of ONO integration into logic CMOS flow

SONOS ONO stack scaling

Oxide-nitride-oxide stack having multiple oxynitride layers

Nonvolatile charge trap memory device having a deuterated layer in...

SONOS stack with split nitride memory layer

Nonvolatile charge trap memory device having a deuterated layer in...

Memory architecture having two independently controlled voltage pumps

SONOS ONO stack scaling

Memory architecture having two independently controlled voltage pumps

SONOS stack with split nitride memory layer

SONOS stack with split nitride memory layer

Nonvolatile charge trap memory device having a deuterated layer in...

Nonvolatile charge trap memory device having a deuterated layer in...

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Nitridation oxidation of tunneling layer for improved SONOS speed a...

SONOS ONO stack scaling

Method of ONO integration into logic CMOS flow

SONOS stack with split nitride memory layer

Simultaneously forming a dielectric layer in MOS and ONO device reg...

Patents Applicationslast 30 patents

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW

SONOS ONO STACK SCALING

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW

SONOS ONO STACK SCALING

SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN...

SONOS Stack With Split Nitride Memory Layer

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

SONOS ONO STACK SCALING

MEMORY ARCHITECTURE HAVING TWO INDEPENDENTLY CONTROLLED VOLTAGE PUMPS

SONOS Stack With Split Nitride Memory Layer

NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN...

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

Nonvolatile Charge Trap Memory Device Having A Deuterated Layer In...

SONOS ONO STACK SCALING

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

SONOS Stack With Split Nitride Memory Layer

MEMORY ARCHITECTURE HAVING TWO INDEPENDENTLY CONTROLLED VOLTAGE PUMPS

SONOS Stack With Split Nitride Memory Layer

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

Nonvolatile Charge Trap Memory Device Having a Deuterated Layer in...

DEUTERATED FILM ENCAPSULATION OF NONVOLATILE CHARGE TRAP MEMORY DEVICE

SONOS ONO STACK SCALING