FREDERICK N. HAUSE

Person

AUSTIN, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electronic device and method of biasing
- Patent number 8,687,417
- Issue date Apr 1, 2014
- GlobalFoundries Inc.
- Ruigang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat dissipation in temperature critical device areas of semiconduc...
- Patent number 8,564,120
- Issue date Oct 22, 2013
- GLOBALFOUNDRIES Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor semiconductor device and method of manufacture
- Patent number 7,804,107
- Issue date Sep 28, 2010
- T-RAM Semiconductor, Inc.
- Andrew E. Horch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of optimizing sidewall spacer size for silicide proximity wi...
- Patent number 7,745,337
- Issue date Jun 29, 2010
- GLOBALFOUNDRIES Inc.
- David G. Farber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation
- Patent number 7,741,663
- Issue date Jun 22, 2010
- GLOBALFOUNDRIES Inc.
- Fred Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS structures with contact projections for lower contact resistanc...
- Patent number 7,670,932
- Issue date Mar 2, 2010
- Advanced Micro Devices, Inc.
- Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a thyristor semiconductor device
- Patent number 7,279,367
- Issue date Oct 9, 2007
- T-RAM Semiconductor, Inc.
- Andrew E. Horch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an alignment mark on a wafer, and a wafer compris...
- Patent number 7,220,655
- Issue date May 22, 2007
- Advanced Micro Devices, Inc.
- Frederick N. Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having nickel silicide...
- Patent number 6,967,160
- Issue date Nov 22, 2005
- Advanced Micro Devices, Inc.
- Eric Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyrister semiconductor device
- Patent number 6,888,176
- Issue date May 3, 2005
- T-Ram, Inc.
- Andrew E. Horch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel silicide with reduced interface roughness
- Patent number 6,873,051
- Issue date Mar 29, 2005
- Advanced Micro Devices, Inc.
- Eric Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for detecting the endpoint of a chemical-mecha...
- Patent number 6,809,032
- Issue date Oct 26, 2004
- Advanced Micro Devices, Inc.
- Frank Mauersberger
- B24 - GRINDING POLISHING
Information Patent Grant
Integrated circuit with differing gate oxide thickness
- Patent number 6,661,061
- Issue date Dec 9, 2003
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-level segmented control transistor and fabrication method
- Patent number 6,661,057
- Issue date Dec 9, 2003
- Robert Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of topography management in semiconductor formation
- Patent number 6,559,028
- Issue date May 6, 2003
- Advanced Micro Devices, Inc.
- Fred N. Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming openings for conductive interconnects
- Patent number 6,555,479
- Issue date Apr 29, 2003
- Advanced Micro Devices, Inc.
- Frederick N. Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced line-to-line capacitance and cros...
- Patent number 6,555,892
- Issue date Apr 29, 2003
- Advanced Micro Devices, Inc.
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photolithographic system including light filter that compensates fo...
- Patent number 6,552,776
- Issue date Apr 22, 2003
- Advanced Micro Devices, Inc.
- Derick J. Wristers
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Test structure for providing depth of polish feedback
- Patent number 6,514,858
- Issue date Feb 4, 2003
- Advanced Micro Devices, Inc.
- Frederick N. Hause
- B24 - GRINDING POLISHING
Information Patent Grant
Method for forming a thin dielectric layer
- Patent number 6,491,799
- Issue date Dec 10, 2002
- Advanced Micro Devices, Inc.
- Frederick N. Hause
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming copper interconnects
- Patent number 6,489,240
- Issue date Dec 3, 2002
- Advanced Micro Devices, Inc.
- John A. Iacoponi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor formed using a dual metal process for gate and source/dr...
- Patent number 6,458,678
- Issue date Oct 1, 2002
- Advanced Micro Devices, Inc.
- Thomas E. Spikes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high performance transistor with a reduced width g...
- Patent number 6,429,052
- Issue date Aug 6, 2002
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of analyzing the effects of shadowing of angled halo implants
- Patent number 6,426,262
- Issue date Jul 30, 2002
- Advanced Micro Devices, Inc.
- Mark Brandon Fuselier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact each methodology and integration scheme
- Patent number 6,413,846
- Issue date Jul 2, 2002
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanted barrier layer for retarding upward diffusion of substrate...
- Patent number 6,410,409
- Issue date Jun 25, 2002
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having enhanced metal silicide and a self-aligned gate e...
- Patent number 6,410,967
- Issue date Jun 25, 2002
- Advanced Micro Devices, Inc.
- Frederick N. Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced trench isolation structure
- Patent number 6,403,445
- Issue date Jun 11, 2002
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant diffusion-retarding barrier region formed within polysilicon...
- Patent number 6,380,055
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming low resistance gate electrode
- Patent number 6,376,350
- Issue date Apr 23, 2002
- Advanced Micro Devices, Inc.
- Michael P. Duane
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HEAT DISSIPATION IN TEMPERATURE CRITICAL DEVICE AREAS OF SEMICONDUC...
- Publication number 20100164093
- Publication date Jul 1, 2010
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FORMATION
- Publication number 20100102363
- Publication date Apr 29, 2010
- Advanced Micro Devices, Inc.
- Fred Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OPTIMIZING SIDEWALL SPACER SIZE FOR SILICIDE PROXIMITY WI...
- Publication number 20090286389
- Publication date Nov 19, 2009
- Advanced Micro Devices, Inc.
- David G. Farber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND METHOD OF BIASING
- Publication number 20090090969
- Publication date Apr 9, 2009
- Advanced Micro Devices, Inc.
- Ruigang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS STRUCTURES WITH CONTACT PROJECTIONS FOR LOWER CONTACT RESISTANC...
- Publication number 20080308879
- Publication date Dec 18, 2008
- Advanced Micro Devices, Inc.
- Jianhong ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method And Apparatus For Detecting The Endpoint Of A Chemical-Mecha...
- Publication number 20070105247
- Publication date May 10, 2007
- Advanced Micro Devices
- Frank Mauersberger
- B24 - GRINDING POLISHING
Information Patent Application
Method of forming local interconnect barrier layers
- Publication number 20050101120
- Publication date May 12, 2005
- Fred Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device improvement by lowering LDD resistance with new silicide pro...
- Publication number 20020175371
- Publication date Nov 28, 2002
- Frederick N. Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming silicide contacts and device incorporation same
- Publication number 20020137268
- Publication date Sep 26, 2002
- John G. Pellerin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with a radiation absorbing conductive protecti...
- Publication number 20020056923
- Publication date May 16, 2002
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an etch stop layer during manufacturing of a semi...
- Publication number 20020058402
- Publication date May 16, 2002
- Advanced Micro Device, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with reduced line-to-line capacitance and cros...
- Publication number 20020056887
- Publication date May 16, 2002
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT DIFFUSION-RETARDING BARRIER REGION FORMED WITHIN POLYSILICON...
- Publication number 20020004294
- Publication date Jan 10, 2002
- MARK I. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGFET WITH SILICIDE CONTACT ON ULTRA-THIN GATE
- Publication number 20020003273
- Publication date Jan 10, 2002
- ROBERT DAWSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING AN IGFET USING SOLID PHASE DIFFUSION TO DOPE THE G...
- Publication number 20010039094
- Publication date Nov 8, 2001
- DERICK J. WRISTERS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ISOLATION REGION BOUNDED BY A TRENCH AND COVERED WITH...
- Publication number 20010020727
- Publication date Sep 13, 2001
- FRED N. HAUSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITROGENATED TRENCH LINER FOR IMPROVED SHALLOW TRENCH ISOLATION
- Publication number 20010001723
- Publication date May 24, 2001
- MARK I. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS

FREDERICK N. HAUSE

Person

Patents Grantslast 30 patents

Electronic device and method of biasing

Heat dissipation in temperature critical device areas of semiconduc...

Thyristor semiconductor device and method of manufacture

Method of optimizing sidewall spacer size for silicide proximity wi...

Air gap spacer formation

MOS structures with contact projections for lower contact resistanc...

Method of manufacturing a thyristor semiconductor device

Method of forming an alignment mark on a wafer, and a wafer compris...

Method of manufacturing semiconductor device having nickel silicide...

Thyrister semiconductor device

Nickel silicide with reduced interface roughness

Method and apparatus for detecting the endpoint of a chemical-mecha...

Integrated circuit with differing gate oxide thickness

Tri-level segmented control transistor and fabrication method

Method of topography management in semiconductor formation

Method for forming openings for conductive interconnects

Semiconductor device with reduced line-to-line capacitance and cros...

Photolithographic system including light filter that compensates fo...

Test structure for providing depth of polish feedback

Method for forming a thin dielectric layer

Method for forming copper interconnects

Transistor formed using a dual metal process for gate and source/dr...

Method of making high performance transistor with a reduced width g...

Method of analyzing the effects of shadowing of angled halo implants

Contact each methodology and integration scheme

Implanted barrier layer for retarding upward diffusion of substrate...

Transistor having enhanced metal silicide and a self-aligned gate e...

Enhanced trench isolation structure

Dopant diffusion-retarding barrier region formed within polysilicon...

Method of forming low resistance gate electrode

Patents Applicationslast 30 patents

HEAT DISSIPATION IN TEMPERATURE CRITICAL DEVICE AREAS OF SEMICONDUC...

AIR GAP SPACER FORMATION

METHOD OF OPTIMIZING SIDEWALL SPACER SIZE FOR SILICIDE PROXIMITY WI...

ELECTRONIC DEVICE AND METHOD OF BIASING

MOS STRUCTURES WITH CONTACT PROJECTIONS FOR LOWER CONTACT RESISTANC...

Method And Apparatus For Detecting The Endpoint Of A Chemical-Mecha...

Method of forming local interconnect barrier layers

Device improvement by lowering LDD resistance with new silicide pro...

Method of forming silicide contacts and device incorporation same

Semiconductor device with a radiation absorbing conductive protecti...

Method of forming an etch stop layer during manufacturing of a semi...

Semiconductor device with reduced line-to-line capacitance and cros...

DOPANT DIFFUSION-RETARDING BARRIER REGION FORMED WITHIN POLYSILICON...

IGFET WITH SILICIDE CONTACT ON ULTRA-THIN GATE

METHOD OF MAKING AN IGFET USING SOLID PHASE DIFFUSION TO DOPE THE G...

SEMICONDUCTOR ISOLATION REGION BOUNDED BY A TRENCH AND COVERED WITH...

NITROGENATED TRENCH LINER FOR IMPROVED SHALLOW TRENCH ISOLATION