Fritz L. Schuermeyer

Person

Yellow Springs, OH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Twin-tub complementary heterostructure field effect transistor fab...
- Patent number 5,429,963
- Issue date Jul 4, 1995
- The United States of America as represented by the Secretary of the Air Force
- Edgar J. Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making staggered complementary heterostructure FET
- Patent number 5,192,698
- Issue date Mar 9, 1993
- The United State of America as represented by the Secretary of the Air Force
- Fritz L. Schuermeyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making self-aligned IGFET
- Patent number 4,532,695
- Issue date Aug 6, 1985
- The United States of America as represented by the Secretary of the Air Force
- Fritz L. Schuermeyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic MESFET logic with voltage level shift circuit
- Patent number 4,450,369
- Issue date May 22, 1984
- Fritz L. Schuermeyer
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gallium arsenide MIS integrated circuits
- Patent number 4,438,351
- Issue date Mar 20, 1984
- Fritz L. Schuermeyer
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Dynamic random access memory cell using field effect devices
- Patent number 4,375,677
- Issue date Mar 1, 1983
- Fritz L. Schuermeyer
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile punch through memory cell with buried n+ region in channel
- Patent number 4,163,985
- Issue date Aug 7, 1979
- The United States of America as represented by the Secretary of the Air Force
- Fritz L. Schuermeyer
- G11 - INFORMATION STORAGE
Information Patent Grant
Quasi static, virtually nonvolatile random access memory cell
- Patent number 4,091,460
- Issue date May 23, 1978
- The United States of America as represented by the Secretary of the Air Force
- Fritz L. Schuermeyer
- G11 - INFORMATION STORAGE
Information Patent Grant
Virtually nonvolatile random access memory cell
- Patent number 4,064,492
- Issue date Dec 20, 1977
- Fritz L. Schuermeyer
- G11 - INFORMATION STORAGE

Fritz L. Schuermeyer

Person

Patents Grantslast 30 patents

Twin-tub complementary heterostructure field effect transistor fab...

Making staggered complementary heterostructure FET

Method of making self-aligned IGFET

Dynamic MESFET logic with voltage level shift circuit

Gallium arsenide MIS integrated circuits

Dynamic random access memory cell using field effect devices

Nonvolatile punch through memory cell with buried n+ region in channel

Quasi static, virtually nonvolatile random access memory cell

Virtually nonvolatile random access memory cell